BGB707L7ESDE6327XTSA1

BGB707L7ESD Wideband MMIC LNA with Integrated ESD Protection Data Sheet Revision 3.3, 2012-11-09 RF & Protection Devices Edition 2012-11-09 Published by Infineon Technologies AG 81726 Munich, Germany © 2013 Infineon Technologies AG All Rights Reserved. Legal Disclaimer The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics. With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation, warranties of non-infringement of intellectual property rights of any third party. Information For further information on technology, delivery terms and conditions and prices, please contact the nearest Infineon Technologies Office (www.infineon.com). Warnings Due to technical requirements, components may contain dangerous substances. For information on the types in question, please contact the nearest Infineon Technologies Office. Infineon Technologies components may be used in life-support devices or systems only with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. BGB707L7ESD BGB707L7ESD, Wideband MMIC LNA with Integrated ESD Protection Revision History: 2012-11-09, Revision 3.3 Page Subjects (changes since previous revision) This data sheet replaces the revision from 2010-06-30. The product itself has not been changed and the device characteristics remain unchanged. Only the product description and information available in the data sheet have been expanded and updated. Trademarks of Infineon Technologies AG AURIX™, C166™, CanPAK™, CIPOS™, CIPURSE™, EconoPACK™, CoolMOS™, CoolSET™, CORECONTROL™, CROSSAVE™, DAVE™, DI-POL™, EasyPIM™, EconoBRIDGE™, EconoDUAL™, EconoPIM™, EconoPACK™, EiceDRIVER™, eupec™, FCOS™, HITFET™, HybridPACK™, I²RF™, ISOFACE™, IsoPACK™, MIPAQ™, ModSTACK™, my-d™, NovalithIC™, OptiMOS™, ORIGA™, POWERCODE™; PRIMARION™, PrimePACK™, PrimeSTACK™, PRO-SIL™, PROFET™, RASIC™, ReverSave™, SatRIC™, SIEGET™, SINDRION™, SIPMOS™, SmartLEWIS™, SOLID FLASH™, TEMPFET™, thinQ!™, TRENCHSTOP™, TriCore™. Other Trademarks Advance Design System™ (ADS) of Agilent Technologies, AMBA™, ARM™, MULTI-ICE™, KEIL™, PRIMECELL™, REALVIEW™, THUMB™, µVision™ of ARM Limited, UK. AUTOSAR™ is licensed by AUTOSAR development partnership. Bluetooth™ of Bluetooth SIG Inc. CAT-iq™ of DECT Forum. COLOSSUS™, FirstGPS™ of Trimble Navigation Ltd. EMV™ of EMVCo, LLC (Visa Holdings Inc.). EPCOS™ of Epcos AG. FLEXGO™ of Microsoft Corporation. FlexRay™ is licensed by FlexRay Consortium. HYPERTERMINAL™ of Hilgraeve Incorporated. IEC™ of Commission Electrotechnique Internationale. IrDA™ of Infrared Data Association Corporation. ISO™ of INTERNATIONAL ORGANIZATION FOR STANDARDIZATION. MATLAB™ of MathWorks, Inc. MAXIM™ of Maxim Integrated Products, Inc. MICROTEC™, NUCLEUS™ of Mentor Graphics Corporation. MIPI™ of MIPI Alliance, Inc. MIPS™ of MIPS Technologies, Inc., USA. muRata™ of MURATA MANUFACTURING CO., MICROWAVE OFFICE™ (MWO) of Applied Wave Research Inc., OmniVision™ of OmniVision Technologies, Inc. Openwave™ Openwave Systems Inc. RED HAT™ Red Hat, Inc. RFMD™ RF Micro Devices, Inc. SIRIUS™ of Sirius Satellite Radio Inc. SOLARIS™ of Sun Microsystems, Inc. SPANSION™ of Spansion LLC Ltd. Symbian™ of Symbian Software Limited. TAIYO YUDEN™ of Taiyo Yuden Co. TEAKLITE™ of CEVA, Inc. TEKTRONIX™ of Tektronix Inc. TOKO™ of TOKO KABUSHIKI KAISHA TA. UNIX™ of X/Open Company Limited. VERILOG™, PALLADIUM™ of Cadence Design Systems, Inc. VLYNQ™ of Texas Instruments Incorporated. VXWORKS™, WIND RIVER™ of WIND RIVER SYSTEMS, INC. ZETEX™ of Diodes Zetex Limited. Last Trademarks Update 2011-11-11 Data Sheet 3 Revision 3.3, 2012-11-09 BGB707L7ESD Table of Contents Table of Contents Table of Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 List of Figures . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5 List of Tables . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 1 Product Brief . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7 2 Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8 3 Pin Configuration . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 4 Functional Block Diagram . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 5 Maximum Ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 6 Thermal Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 7 Operation Conditions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 8 8.1 8.2 8.3 8.3.1 8.3.1.1 8.3.1.2 8.3.2 8.3.3 8.3.4 Electrical Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . DC Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Typical DC Characteristic Curves . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . AC Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . AC Characteristics in FM Radio Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . High-Ohmic FM Radio Antenna . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50 Ω FM Radio Antenna . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . AC Characteristics in the SDMB Application . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . AC Characteristics in Test Fixture . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Typical AC Characteristic Curves . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 Package Information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 32 Data Sheet 4 13 13 14 16 16 16 16 17 18 28 Revision 3.3, 2012-11-09 BGB707L7ESD List of Figures List of Figures Figure 3-1 Figure 4-1 Figure 6-1 Figure 8-1 Figure 8-2 Figure 8-3 Figure 8-4 Figure 8-5 Figure 8-6 Figure 8-7 Figure 8-8 Figure 8-9 Figure 8-10 Figure 8-11 Figure 8-12 Figure 8-13 Figure 9-1 Figure 9-2 Figure 9-3 Figure 9-4 Data Sheet Pinning of BGB707L7ESD in TSLP-7-1 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 Functional Block Diagram. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 Total Power Dissipation Ptot = f (Ts) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 ICC as a Function of Rext, VCC as Parameter . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14 ICC as a Function of VCC, VCtrl = 3 V, Rext as Parameter . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14 ICC as a Function of VCtrl, VCC = 3 V, Rext as Parameter . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15 ICC as a Function of Temperature, VCtrl = VCC = 3 V, Rext = open . . . . . . . . . . . . . . . . . . . . . . . . . . 15 Testing Circuit for Frequencies from 150 MHz to 10 GHz . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 18 S11 as a Function of Frequency, IC as Parameter. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 28 S22 as a Function of Frequency, IC as Parameter. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 28 Transition Frequency as a Function of IC, VC as Parameter. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 29 Optimum Source Impedance for Minimum NF as a Function of Frequency, IC as Parameter. . . . 29 Maximum Power Gain as a Function of IC, Frequency as Parameter . . . . . . . . . . . . . . . . . . . . . . 30 Power Gain as a Function of IC, Frequency as Parameter. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30 Power Gain and Total Supply Current as a Function of RF Input Power at 3.5 GHz . . . . . . . . . . . 31 Output 3rd Order Intercept Point as a Function of IC at 3.5 GHz, VC as Parameter. . . . . . . . . . . . 31 Package Outline TSLP-7-1 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 32 Footprint . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 32 Marking Layout (top view). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 32 Tape Dimensions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 32 5 Revision 3.3, 2012-11-09 BGB707L7ESD List of Tables List of Tables Table 3-1 Table 5-1 Table 6-1 Table 7-1 Table 8-1 Table 8-2 Table 8-3 Table 8-4 Table 8-5 Table 8-6 Table 8-7 Table 8-8 Table 8-9 Table 8-10 Table 8-11 Table 8-12 Table 8-13 Data Sheet Pinning Table . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 Maximum Ratings at TA = 25 °C (unless otherwise specified) . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 Thermal Resistance . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 Operation Conditions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 DC Characteristics at VCC = 3 V, TA = 25 °C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 AC Characteristics in the FM Radio Application as Described in AN177 . . . . . . . . . . . . . . . . . . . 16 AC Characteristics in the FM Radio Application as Described in AN181 . . . . . . . . . . . . . . . . . . . 16 AC Characteristics in the SDMB Application as Described in TR122, TA = 25 °C . . . . . . . . . . . . . 17 AC Characteristics VC = 3 V, f = 150 MHz . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 19 AC Characteristics VC = 3 V, f = 450 MHz . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20 AC Characteristics VC = 3 V, f = 900 MHz . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 21 AC Characteristics VC = 3 V, f = 1.5 GHz . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 22 AC Characteristics VC = 3 V, f = 1.9 GHz . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 23 AC Characteristics VC = 3 V, f = 2.4 GHz . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 24 AC Characteristics VC = 3 V, f = 3.5 GHz . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 25 AC Characteristics VC = 3 V, f = 5.5 GHz . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 26 AC Characteristics VC = 3 V, f = 10 GHz . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 27 6 Revision 3.3, 2012-11-09 BGB707L7ESD Product Brief 1 Product Brief The BGB707L7ESD is a Silicon Germanium Carbon (SiGe:C) low noise amplifier MMIC with integrated ESD protection and active biasing. The device is as flexible as a discrete transistor and features high gain, reduced power consumption and very low distortion for a very wide range of applications. The device is based on Infineon Technologies’ cost effective SiGe:C technology and comes in a low profile TSLP7-1 leadless green package. Data Sheet 7 Revision 3.3, 2012-11-09 BGB707L7ESD Features 2 • • Features • • • High performance general purpose wideband MMIC LNA ESD protection integrated for all pins (3 kV for RF input vs. GND, 2 kV for all other pin combinations, HBM) Integrated active biasing circuit enables stable operating point against temperature- and processing-variations Excellent noise figure from Infineon´s reliable high volume SiGe:C technology High gain and linearity at low current consumption Supply voltage: 1.8 V to 4.0 V Adjustable operating current 2.1 mA to 25 mA by external resistor Power-off function Very small and leadless package TSLP-7-1, 2.0 x 1.3 x 0.4 mm3 Pb-free (RoHS compliant) and halogen-free package • Qualification report according to AEC-Q101 available • • • • • Applications As Low Noise Amplifier (LNA) in • • • • • Mobile, portable and fixed connectivity applications: WLAN 802.11a/b/g/n, WiMax 2.5/3.5/5 GHz, UWB, WiFi, Bluetooth Satellite communication systems: Navigation systems (GPS, Glonass), satellite radio (SDARs, DAB) and C-band LNB Multimedia applications such as mobile/portable TV, CATV, FM Radio 3G/4G UMTS/LTE mobile phone applications ISM applications like RKE, AMR and Zigbee Attention: ESD (Electrostatic discharge) sensitive device, observe handling precautions Product Name Package Marking BGB707L7ESD TSLP-7-1 AZ Data Sheet 8 Revision 3.3, 2012-11-09 BGB707L7ESD Pin Configuration 3 Pin Configuration 6 5 4 7 1 2 3 Figure 3-1 Pinning of BGB707L7ESD in TSLP-7-1 Table 3-1 Pinning Table Pin Name Function 1 VCC Supply voltage 2 VBias Bias reference voltage 3 RFin RF input 4 RFout RF output 5 VCtrl On/Off control voltage 6 Adj Current adjustment pin 7 GND DC/RF GND Data Sheet 9 Revision 3.3, 2012-11-09 BGB707L7ESD Functional Block Diagram 4 Functional Block Diagram The functional block in Figure 4-1 shows the principal schematic how the BGB707L7ESD is used in a circuit. The Power On/Off function is controlled by applying VCtrl. By using an external resistor Rext the pre-set current of 2.1 mA (which is adjusted by the integrated biasing when Rext is omitted) can be increased. Base- and collector voltages are applied to the respective pins RFin and RFout by external inductors LB and LC. ICC DC, VCC Rext BGB707L7ESD 1 VCC 2 In Cin LB 6 BIAS CIRCUIT Adj LC ICtrl 5 Vbias VCtrl 3 4 RFin Cout Out RFout GND 7 DC, Vctrl (on package backside) BGB707L7ESD function block Figure 4-1 Functional Block Diagram Data Sheet 10 Revision 3.3, 2012-11-09 BGB707L7ESD Maximum Ratings 5 Maximum Ratings Table 5-1 Maximum Ratings at TA = 25 °C (unless otherwise specified) Parameter Symbol Supply Voltage VCC Values Min. Typ. Max. – – 4.0 – – 3.5 Unit Note / Test Condition V TA = 25 °C TA = -55 °C Supply Current at VCC pin ICC – – 25 mA – DC Current at RF In pin IB – – 2 mA – Voltage at Ctrl On/Off pin Vctrl – – 4.0 V – 1) Ptot – – 100 mW TS ≤112 °C TJ – – 150 °C – Total Power Dissipation Junction Temperature Storage Temperature TStg -55 – 150 °C – 1) TS is the soldering point temperature. TS is measured at the GND pin (7) at the soldering point to the pcb Attention: Stresses above the max. values listed here may cause permanent damage to the device. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. Maximum ratings are absolute ratings; exceeding only one of these values may cause irreversible damage to the integrated circuit. Data Sheet 11 Revision 3.3, 2012-11-09 BGB707L7ESD Thermal Characteristics 6 Thermal Characteristics Table 6-1 Thermal Resistance Parameter Symbol Values Min. Typ. Unit Note / Test Condition Max. 1) Junction - Soldering Point RthJS – 375 – K/W – 1)For the definition of RthJS please refer to Application Note AN077 (Thermal Resistance Calculation) 120 100 Ptot [mW] 80 60 40 20 0 0 50 100 150 Ts [°C] Figure 6-1 Total Power Dissipation Ptot = f (Ts) Data Sheet 12 Revision 3.3, 2012-11-09 BGB707L7ESD Operation Conditions 7 Operation Conditions Table 7-1 Operation Conditions Parameter Symbol Values Min. Typ. Max. Unit Note / Test Condition Supply Voltage VCC 1.8 3.0 4.0 V – Voltage Ctrl On/Off pin in On mode Vctrl 1.2 – VCC V – Voltage Ctrl On/Off pin in Off mode Vctrl -0.3 – 0.3 V – 8 Electrical Characteristics 8.1 DC Characteristics Table 8-1 DC Characteristics at VCC = 3 V, TA = 25 °C Parameter Supply Current Symbol ICC Values Unit Note / Test Condition mA VCtrl = 3 V Min. Typ. Max. – – – 1.6 2.1 2.6 Rext = open – 3 – Rext = 12 kΩ – 4.2 – Rext = 4.7 kΩ – 6 – Rext = 2.4 kΩ – 10 – Rext = 1 kΩ Supply current in Off mode ICC-off – – 6 μA VCtrl = 0 V Current into VCtrl pin in On mode ICtrl-on – 14 20 μA VCtrl = 3 V Current into VCtrl pin in Off mode ICtrl-off – – 0.1 μA VCtrl = 0 V Data Sheet 13 Revision 3.3, 2012-11-09 BGB707L7ESD Electrical Characteristics 8.2 Typical DC Characteristic Curves The measurement setup is an application circuit according to Figure 4-1 using the integrated biasing. TA = 25 °C unless otherwise specified. 30 28 1- VCC / VCtrl = 3V 26 1 24 2- VCC / VCtrl = 1.8V 3 3- VCC / VCtrl = 4V 22 ICC [mA] 20 18 16 2 14 12 10 8 6 4 2 0 10 100 1000 10000 100000 Rext [Ohm] Figure 8-1 ICC as a Function of Rext, VCC as Parameter 15 14 13 Rext = 1 kΩ 12 11 ICC [mA] 10 9 8 Rext = 2.4 kΩ 7 6 Rext = 4.7 kΩ 5 Rext = 12 kΩ 4 3 2 Rext = OPEN 1 0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 VCC [V] Figure 8-2 ICC as a Function of VCC, VCtrl = 3 V, Rext as Parameter Data Sheet 14 Revision 3.3, 2012-11-09 BGB707L7ESD Electrical Characteristics 15 14 13 12 11 Rext=1kΩ 10 ICC [mA] 9 8 7 Rext= 2.4kΩ 6 5 Rext= 4.7kΩ 4 Rext= 12kΩ 3 Rext= OPEN 2 1 0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 VCtrl [V] Figure 8-3 ICC as a Function of VCtrl, VCC = 3 V, Rext as Parameter 3.0 2.8 2.6 ICC [mA] 2.4 2.2 2.0 1.8 1.6 1.4 1.2 1.0 -50 -30 -10 10 30 50 70 90 110 130 150 Temperature [°C] Figure 8-4 ICC as a Function of Temperature, VCtrl = VCC = 3 V, Rext = open Data Sheet 15 Revision 3.3, 2012-11-09 BGB707L7ESD Electrical Characteristics 8.3 AC Characteristics AC characteristics are described in two sub-chapters, first for 100 MHz FM Radio applications, then for higher frequencies in a 50 Ω environment. 8.3.1 AC Characteristics in FM Radio Applications Two BGB707L7ESD FM radio application notes are available on our website www.infineon.com/BGB707. Depending on the impedance of the used antenna, please consult AN177 for high-ohmic antennas and AN181 for 50 Ω antennas. In this chapter you find a summary of the electrical performance as described in these application notes in table form. 8.3.1.1 High-Ohmic FM Radio Antenna TA = 25 °C, VCC = 3.0 V, ICC = 3.0 mA, VCtrl = 3.0 V, f = 100 MHz, Rext = 12 kΩ Table 8-2 AC Characteristics in the FM Radio Application as Described in AN177 Parameter Symbol Transducer Gain |S21|² Values Unit Note / Test Condition Min. Typ. Max. – 12 – dB – 1) Input Return Loss RLIN – 0.5 – dB – Output Return Loss RLOUT – 16 – dB – NF – 1.0 – dB – IP1dB – -5.5 – dBm – IIP3 – -12.5 – dBm – Noise Figure (Zs = 50 Ω) Input 1 dB Gain Compression Point rd Input 3 Order Intercept Point 3) 2) 1) LNA presents a high input impedance match over the 76-108 MHz FM radio band. 2) ICC increases as RF input power level approaches IP1dB. 3) IIP3 value depends on termination of all intermodulation frequency components. Termination used for the measurement is 50 Ω from 0.1 to 6 GHz. 8.3.1.2 50 Ω FM Radio Antenna TA = 25°C, VCC = 2.8 V, ICC = 4.2 mA, VCtrl = 2.8 V, f = 100 MHz, Rext = 4.7 kΩ Table 8-3 AC Characteristics in the FM Radio Application as Described in AN181 Parameter Symbol Values Min. Typ. Max. Unit Note / Test Condition Transducer Gain |S21|² 13.5 15 16.5 dB – Input Return Loss RLIN – 7.5 – dB – Output Return Loss RLOUT – 14.5 – dB – Noise figure (Zs = 50Ω) NF – 1.35 1.9 dB – – -10 – dBm – -6 – dBm – Input 1 dB Gain Compression Point1) 2) IP1dB rd 2)3) Input 3 Order Intercept Point IIP3 -7.5 1) ICC increases as RF input power level approaches IP1dB. 2) Verified by random sampling 3) IIP3 value depends on termination of all intermodulation frequency components. Termination used for the measurement is 50 Ω from 0.1 to 6 GHz. Data Sheet 16 Revision 3.3, 2012-11-09 BGB707L7ESD Electrical Characteristics 8.3.2 AC Characteristics in the SDMB Application A technical report TR122 for LNA applications in the frequency range 2.3 GHz to 2.7 GHz is available on our web page www.infineon.com/BGB707. In this chapter you find a summary of the electrical performance for the SDMB application as described in technical report TR122 in table form. Table 8-4 AC Characteristics in the SDMB Application as Described in TR122, TA = 25 °C Parameter Symbol Values Min. Typ. Max. Unit Note / Test Condition Frequency Range Freq – 2.6 – GHz – Supply Voltage Vcc – 2.8 – V – Bias Current Icc 4.4 5.6 6.8 mA – Transducer Gain |S21|² 13 15 17 dB Power @ port1 = -30 dBm Transducer Gain (off mode) |S21| off – -18 – dB – Noise Figure (Zs = 50 Ω) NF – 1.15 1.5 dB Including 0.1 dB Board losses Input Return Loss RLIN – 13.2 – dB – Output Return Loss RLOUT – 12 – dB – Reverse Isolation IREV – 27.8 – dB Power @ port2 = -10 dBm Input P1dB IP1dB – -9.6 – dBm – Output P1dB OP1dB – 4.4 – dBm – Input IP3 IIP3 – -1.4 – dBm Input power = -30 dBm Output IP3 OIP3 – 13.6 – dBm – On Switching Time Ton – 1.5 – μs Measured with C2 = 1 nF Off Switching Time Toff – 4.2 – μs – Stability k – >1 – 2 Data Sheet 17 Stability measured up to 10 GHz Revision 3.3, 2012-11-09 BGB707L7ESD Electrical Characteristics 8.3.3 AC Characteristics in Test Fixture For frequencies from 150 MHz to 10 GHz the measurement setup is a test fixture with Bias-T’s in a 50 Ω system according to Figure 8-5 at VC = 3 V, TA = 25 °C. The collector current IC is controlled by an external base voltage VB applied at RFin pin and not by the integrated biasing´s reference voltage VBias. VC controls the collector voltage at RFout pin. This allows direct measurement of the amplifier performance as a function of bias conditions without passive components. Top View 1 VCC 2 VBias Adj 6 VB VC IC VCtrl GND 5 Bias-T Bias-T In 3 RFin RFout 4 7 BGB707L7ESD testing circuit Figure 8-5 Testing Circuit for Frequencies from 150 MHz to 10 GHz Data Sheet 18 Revision 3.3, 2012-11-09 BGB707L7ESD Electrical Characteristics Table 8-5 AC Characteristics VC = 3 V, f = 150 MHz Parameter Symbol Values Min. Minimum Noise Figure Transducer Gain Maximum Power Gain Output 1 dB Compression Point1) Typ. Unit Note / Test Condition dB ZS = ZSopt Max. NFmin – 0.4 – IC = 2.1 mA – 0.4 – IC = 3 mA – 0.5 – IC = 6 mA – 0.55 – IC = 10 mA |S21|² dB ZS = ZL = 50 Ω – 17 – IC = 2.1 mA – 19 – IC = 3 mA – 24 – IC = 6 mA – 27 – IC = 10 mA dB Gms ZL = ZLopt, ZS = ZSopt – 31.5 – IC = 2.1 mA – 33 – IC = 3 mA – 35 – IC = 6 mA – 37 – IC = 10 mA dBm OP1dB – 3.5 – ICq = 2.1 mA, ICcomp = 11 mA2) – 4 – ICq = 3 mA, ICcomp = 11 mA – 4.5 – ICq = 6 mA, ICcomp = 11 mA – 3 – ICq = 10 mA, ICcomp = 11 mA Output 3rd Order Intercept OIP3 Point dBm – 2 – IC = 2.1 mA – 6 – IC = 3 mA – 14.5 – IC = 6 mA – 19.5 – IC = 10 mA 1) OP1dB is the output compression point achieved in a 50 Ω application circuit according to Figure 4-1 using the integrated biasing. 2) ICq is the quiescent current at small input power levels. ICq increases up to ICcomp as RF input power approaches IP1dB, cf. Figure 8-12. Data Sheet 19 Revision 3.3, 2012-11-09 BGB707L7ESD Electrical Characteristics Table 8-6 AC Characteristics VC = 3 V, f = 450 MHz Parameter Symbol Values Min. Minimum Noise Figure Transducer Gain Maximum Power Gain Output 1 dB Compression Point1) Typ. Unit Note / Test Condition dB ZS = ZSopt Max. NFmin – 0.45 – IC = 2.1 mA – 0.45 – IC = 3 mA – 0.5 – IC = 6 mA – 0.6 – IC = 10 mA |S21|² dB ZS = ZL = 50 Ω – 17 – IC = 2.1 mA – 19 – IC = 3 mA – 24 – IC = 6 mA – 27 – IC = 10 mA dB Gms ZL = ZLopt, ZS = ZSopt – 27 – IC = 2.1 mA – 28 – IC = 3 mA – 30.5 – IC = 6 mA – 32 – IC = 10 mA dBm OP1dB – 11.5 – ICq = 2.1 mA, ICcomp = 11 mA2) – 12 – ICq = 3 mA, ICcomp = 14 mA – 11.5 – ICq = 6 mA, ICcomp = 16 mA – 9.5 – ICq = 10 mA, ICcomp = 15 mA Output 3rd Order Intercept OIP3 Point dBm – 2 – IC = 2.1 mA – 5.5 – IC = 3 mA – 14 – IC = 6 mA – 19.5 – IC = 10 mA 1) OP1dB is the output compression point achieved in a 50 Ω application circuit according to Figure 4-1 using the integrated biasing. 2) ICq is the quiescent current at small input power levels. ICq increases up to ICcomp as RF input power approaches IP1dB, cf. Figure 8-12. Data Sheet 20 Revision 3.3, 2012-11-09 BGB707L7ESD Electrical Characteristics Table 8-7 AC Characteristics VC = 3 V, f = 900 MHz Parameter Symbol Values Min. Minimum Noise Figure Transducer Gain Maximum Power Gain Output 1 dB Compression Point1) Typ. Unit Note / Test Condition dB ZS = ZSopt Max. NFmin – 0.55 – IC = 2.1 mA – 0.55 – IC = 3 mA – 0.6 – IC = 6 mA – 0.7 – IC = 10 mA |S21|² dB ZS = ZL = 50 Ω – 17 – IC = 2.1 mA – 19 – IC = 3 mA – 23.5 – IC = 6 mA – 26 – IC = 10 mA dB Gms ZL = ZLopt, ZS = ZSopt – 24 – IC = 2.1 mA – 25 – IC = 3 mA – 27.5 – IC = 6 mA – 29 – IC = 10 mA dBm OP1dB – 11 – ICq = 2.1 mA, ICcomp = 13 mA2) – 11 – ICq = 3 mA, ICcomp = 15 mA – 10 – ICq = 6 mA, ICcomp = 14 mA – 8.5 – ICq = 10 mA, ICcomp = 14 mA Output 3rd Order Intercept OIP3 Point dBm – 3.5 – IC = 2.1 mA – 8 – IC = 3 mA – 17 – IC = 6 mA – 19.5 – IC = 10 mA 1) OP1dB is the output compression point achieved in a 50 Ω application circuit according to Figure 4-1 using the integrated biasing. 2) ICq is the quiescent current at small input power levels. ICq increases up to ICcomp as RF input power approaches IP1dB, cf. Figure 8-12. Data Sheet 21 Revision 3.3, 2012-11-09 BGB707L7ESD Electrical Characteristics Table 8-8 AC Characteristics VC = 3 V, f = 1.5 GHz Parameter Symbol Values Min. Minimum Noise Figure Transducer Gain Maximum Power Gain Output 1 dB Compression Point1) Typ. Unit Note / Test Condition dB ZS = ZSopt Max. NFmin – 0.6 – IC = 2.1 mA – 0.6 – IC = 3 mA – 0.6 – IC = 6 mA – 0.7 – IC = 10 mA |S21|² dB ZS = ZL = 50 Ω – 16 – IC = 2.1 mA – 18.5 – IC = 3 mA – 22.5 – IC = 6 mA – 24.5 – IC = 10 mA dB Gms ZL = ZLopt, ZS = ZSopt – 21.5 – IC = 2.1 mA – 23 – IC = 3 mA – 25.5 – IC = 6 mA – 27 – IC = 10 mA dBm OP1dB – 10.5 – ICq = 2.1 mA, ICcomp = 14 mA2) – 10 – ICq = 3 mA, ICcomp = 16 mA – 9 – ICq = 6 mA, ICcomp = 15 mA – 8 – ICq = 10 mA, ICcomp = 15 mA Output 3rd Order Intercept OIP3 Point dBm – 3.5 – IC = 2.1 mA – 8 – IC = 3 mA – 17 – IC = 6 mA – 19.5 – IC = 10 mA 1) OP1dB is the output compression point achieved in a 50 Ω application circuit according to Figure 4-1 using the integrated biasing. 2) ICq is the quiescent current at small input power levels. ICq increases up to ICcomp as RF input power approaches IP1dB, cf. Figure 8-12. Data Sheet 22 Revision 3.3, 2012-11-09 BGB707L7ESD Electrical Characteristics Table 8-9 AC Characteristics VC = 3 V, f = 1.9 GHz Parameter Symbol Values Min. Minimum Noise Figure Transducer Gain Maximum Power Gain Output 1 dB Compression Point1) Typ. Unit Note / Test Condition dB ZS = ZSopt Max. NFmin – 0.6 – IC = 2.1 mA – 0.6 – IC = 3 mA – 0.6 – IC = 6 mA – 0.7 – IC = 10 mA |S21|² dB ZS = ZL = 50 Ω – 16 – IC = 2.1 mA – 18 – IC = 3 mA – 21.5 – IC = 6 mA – 23 – IC = 10 mA dB Gms ZL = ZLopt, ZS = ZSopt – 21 – IC = 2.1 mA – 22 – IC = 3 mA – 24 – IC = 6 mA – 26 – IC = 10 mA dBm OP1dB – 10 – ICq = 2.1 mA, ICcomp = 15 mA2) – 10 – ICq = 3 mA, ICcomp = 16 mA – 8.5 – ICq = 6 mA, ICcomp = 14 mA – 8 – ICq = 10 mA, ICcomp = 14 mA Output 3rd Order Intercept OIP3 Point dBm – 3.5 – IC = 2.1 mA – 7.5 – IC = 3 mA – 17 – IC = 6 mA – 19.5 – IC = 10 mA 1) OP1dB is the output compression point achieved in a 50 Ω application circuit according to Figure 4-1 using the integrated biasing. 2) ICq is the quiescent current at small input power levels. ICq increases up to ICcomp as RF input power approaches IP1dB, cf. Figure 8-12. Data Sheet 23 Revision 3.3, 2012-11-09 BGB707L7ESD Electrical Characteristics Table 8-10 AC Characteristics VC = 3 V, f = 2.4 GHz Parameter Symbol Values Min. Minimum Noise Figure Transducer Gain Maximum Power Gain Output 1 dB Compression Point1) Typ. Unit Note / Test Condition dB ZS = ZSopt Max. NFmin – 0.65 – IC = 2.1 mA – 0.6 – IC = 3 mA – 0.6 – IC = 6 mA – 0.7 – IC = 10 mA |S21|² dB ZS = ZL = 50 Ω – 15.5 – IC = 2.1 mA – 17 – IC = 3 mA – 20 – IC = 6 mA – 21.5 – IC = 10 mA dB Gms ZL = ZLopt, ZS = ZSopt – 20 – IC = 2.1 mA – 21 – IC = 3 mA – 23 – IC = 6 mA – 25 – IC = 10 mA dBm OP1dB – 10 – ICq = 2.1 mA, ICcomp = 15 mA2) – 10 – ICq = 3 mA, ICcomp = 16 mA – 9 – ICq = 6 mA, ICcomp = 14 mA – 8 – ICq = 10 mA, ICcomp = 14 mA Output 3rd Order Intercept OIP3 Point dBm – 4.5 – IC = 2.1 mA – 9 – IC = 3 mA – 17.5 – IC = 6 mA – 19.5 – IC = 10 mA 1) OP1dB is the output compression point achieved in a 50 Ω application circuit according to Figure 4-1 using the integrated biasing. 2) ICq is the quiescent current at small input power levels. ICq increases up to ICcomp as RF input power approaches IP1dB, cf. Figure 8-12. Data Sheet 24 Revision 3.3, 2012-11-09 BGB707L7ESD Electrical Characteristics Table 8-11 AC Characteristics VC = 3 V, f = 3.5 GHz Parameter Symbol Values Min. Minimum Noise Figure Transducer Gain Maximum Power Gain Output 1 dB Compression Point1) Typ. Unit Note / Test Condition dB ZS = ZSopt Max. NFmin – 0.8 – IC = 2.1 mA – 0.75 – IC = 3 mA – 0.7 – IC = 6 mA – 0.75 – IC = 10 mA |S21|² dB ZS = ZL = 50 Ω – 13.5 – IC = 2.1 mA – 15.5 – IC = 3 mA – 18 – IC = 6 mA – 19 – IC = 10 mA dB Gms ZL = ZLopt, ZS = ZSopt – 18.5 – IC = 2.1 mA – 20 – IC = 3 mA – 22 – IC = 6 mA – 23.5 – IC = 10 mA dBm OP1dB – 10 – ICq = 2.1 mA, ICcomp = 16 mA2) – 10 – ICq = 3 mA, ICcomp = 16 mA – 9 – ICq = 6 mA, ICcomp = 15 mA – 8 – ICq = 10 mA, ICcomp = 15 mA Output 3rd Order Intercept OIP3 Point dBm – 5.5 – IC = 2.1 mA – 12 – IC = 3 mA – 17.5 – IC = 6 mA – 19 – IC = 10 mA 1) OP1dB is the output compression point achieved in a 50 Ω application circuit according to Figure 4-1 using the integrated biasing. 2) ICq is the quiescent current at small input power levels. ICq increases up to ICcomp as RF input power approaches IP1dB, cf. Figure 8-12. Data Sheet 25 Revision 3.3, 2012-11-09 BGB707L7ESD Electrical Characteristics Table 8-12 AC Characteristics VC = 3 V, f = 5.5 GHz Parameter Symbol Values Min. Minimum Noise Figure Transducer Gain Maximum Power Gain Output 1 dB Compression Point1) Typ. Unit Note / Test Condition dB ZS = ZSopt Max. NFmin – 1.05 – IC = 2.1 mA – 1 – IC = 3 mA – 0.9 – IC = 6 mA – 0.95 – IC = 10 mA |S21|² dB ZS = ZL = 50 Ω – 11.5 – IC = 2.1 mA – 13 – IC = 3 mA – 15 – IC = 6 mA – 15.5 – IC = 10 mA dB Gms ZL = ZLopt, ZS = ZSopt – 17.5 – IC = 2.1 mA – 18.5 – IC = 3 mA – 20 – IC = 6 mA – 19 – IC = 10 mA dBm OP1dB – 10.5 – ICq = 2.1 mA, ICcomp = 17 mA2) – 10 – ICq = 3 mA, ICcomp = 17 mA – 9 – ICq = 6 mA, ICcomp = 15 mA – 8 – ICq = 10 mA, ICcomp = 15 mA Output 3rd Order Intercept OIP3 Point dBm – 6.5 – IC = 2.1 mA – 12 – IC = 3 mA – 22 – IC = 6 mA – 21 – IC = 10 mA 1) OP1dB is the output compression point achieved in a 50 Ω application circuit according to Figure 4-1 using the integrated biasing. 2) ICq is the quiescent current at small input power levels. ICq increases up to ICcomp as RF input power approaches IP1dB, cf. Figure 8-12. Data Sheet 26 Revision 3.3, 2012-11-09 BGB707L7ESD Electrical Characteristics Table 8-13 AC Characteristics VC = 3 V, f = 10 GHz Parameter Symbol Values Min. Minimum Noise Figure Transducer Gain Maximum Power Gain Output 1 dB Compression Point1) Typ. Unit Note / Test Condition dB ZS = ZSopt Max. NFmin – 2 – IC = 2.1 mA – 1.8 – IC = 3 mA – 1.5 – IC = 6 mA – 1.5 – IC = 10 mA |S21|² dB ZS = ZL = 50 Ω – 5.5 – IC = 2.1 mA – 7 – IC = 3 mA – 9 – IC = 6 mA – 10 – IC = 10 mA dB Gms ZL = ZLopt, ZS = ZSopt – 14.5 – IC = 2.1 mA – 15 – IC = 3 mA – 15.5 – IC = 6 mA – 15.5 – IC = 10 mA dBm OP1dB – 6 – ICq = 2.1 mA, ICcomp = 16 mA2) – 6 – ICq = 3 mA, ICcomp = 16 mA – 4 – ICq = 6 mA, ICcomp = 15 mA – 4 – ICq = 10 mA, ICcomp = 15 mA Output 3rd Order Intercept OIP3 Point dBm – 2.5 – IC = 2.1 mA – 7 – IC = 3 mA – 19.5 – IC = 6 mA – 18 – IC = 10 mA 1) OP1dB is the output compression point achieved in a 50 Ω application circuit according to Figure 4-1 using the integrated biasing. 2) ICq is the quiescent current at small input power levels. ICq increases up to ICcomp as RF input power approaches IP1dB, cf. Figure 8-11. Data Sheet 27 Revision 3.3, 2012-11-09 BGB707L7ESD Electrical Characteristics 8.3.4 Typical AC Characteristic Curves The measurement setup is the same as described in Figure 8-5 except for Figure 8-12 where compression is measured in a 50 Ω application circuit according to Figure 4-1 using the integrated biasing, VC = 3 V, TA = 25 °C. 1 1.5 0.5 2 0.4 3 0.3 4 0.2 5 0.03 to 10 GHz 0.1 10 step: 1 GHz 0.1 0 0.2 0.3 0.4 0.5 1 1.5 2 3 4 5 −0.1 −10 −0.2 −5 −4 −0.3 −3 −0.4 2.1 mA −0.5 −2 3.0 mA 6.0 mA −1.5 10 mA −1 Figure 8-6 S11 as a Function of Frequency, IC as Parameter 1 1.5 0.5 2 0.4 3 0.3 4 0.2 5 0.03 to 10 GHz 0.1 10 step: 1 GHz 0.1 0 0.2 0.3 0.4 0.5 1 1.5 2 3 4 5 −0.1 −10 −0.2 −5 −4 −0.3 −3 −0.4 2.1 mA −0.5 −2 −1.5 −1 3.0 mA 6.0 mA 10 mA Figure 8-7 S22 as a Function of Frequency, IC as Parameter Data Sheet 28 Revision 3.3, 2012-11-09 BGB707L7ESD Electrical Characteristics 45 4.00V 3.00V 40 fT [GHz] 35 30 25 1.80V 20 15 0 5 10 15 IC [mA] 20 25 30 Figure 8-8 Transition Frequency as a Function of IC, VC as Parameter 1 1.5 0.5 2 0.4 3 0.3 4 3.5GHz 2.4GHz 1.9GHz 1.5GHz 5.5GHz 0.2 0.1 5 10 0.9GHz 0.1 0 0.2 0.3 0.4 0.5 1 1.5 2 3 4 5 0.45GHz 0.15GHz I = 10mA c −0.1 Ic = 2.1mA I = 6.0mA c 10GHz −0.2 −5 −4 I = 3.0mA c −0.3 −10 −3 −0.4 −0.5 −2 −1.5 −1 Figure 8-9 Optimum Source Impedance for Minimum NF as a Function of Frequency, IC as Parameter Data Sheet 29 Revision 3.3, 2012-11-09 BGB707L7ESD Electrical Characteristics 42 0.15GHz 39 36 0.45GHz 33 0.90GHz 1.50GHz 1.90GHz 2.40GHz 3.50GHz Gmax [dB] 30 27 24 21 5.50GHz 18 10.00GHz 15 12 9 0 2 4 6 8 10 12 14 16 18 20 22 24 26 28 30 IC [mA] Figure 8-10 Maximum Power Gain as a Function of IC, Frequency as Parameter 36 33 0.15GHz 0.45GHz 0.90GHz 30 27 1.50GHz 1.90GHz 2.40GHz S21 [dB] 24 21 3.50GHz 18 5.50GHz 15 12 10.00GHz 9 6 3 0 0 2 4 6 8 10 12 14 16 18 20 22 24 26 28 30 IC [mA] Figure 8-11 Power Gain as a Function of IC, Frequency as Parameter Data Sheet 30 Revision 3.3, 2012-11-09 BGB707L7ESD Electrical Characteristics 19 30 18 28 17 P1dB, 10mA 16 26 15 24 14 22 13 Gain [dB] 18 11 P1dB, 2.1mA 10 16 9 14 8 12 7 Current [mA] 20 12 10 6 8 5 4 6 Gain , Icq = 2.1mA Gain , Icq = 10mA Icc , Icq = 2.1mA Icc , Icq = 10mA 3 2 1 4 2 0 0 -40 -37.5 -35 -32.5 -30 -27.5 -25 -22.5 -20 -17.5 -15 -12.5 -10 -7.5 -5 -2.5 0 Input power [dBm] Figure 8-12 Power Gain and Total Supply Current as a Function of RF Input Power at 3.5 GHz 22 20 4V 3V 18 1.8V OIP3 [dBm] 16 14 12 10 8 6 4 0 1 2 3 4 5 6 7 IC [mA] 8 9 10 11 12 Figure 8-13 Output 3rd Order Intercept Point as a Function of IC at 3.5 GHz, VC as Parameter Data Sheet 31 Revision 3.3, 2012-11-09 BGB707L7ESD Package Information Package Information Top view Bottom view 0.4 +0.1 1.3 ±0.05 0.05 MAX. 1 ±0.05 6 1.7 ±0.05 1.2 ±0.035 1) 7 3 Pin 1 marking 2 ±0.05 5 1.1 ±0.035 1) 4 6 x 0.2 ±0.035 1) 9 2 1 6 x 0.2 ±0.035 1) 1) Dimension applies to plated terminal TSLP-7-1-PO V04 Figure 9-1 Package Outline TSLP-7-1 NSM D SMD Solder mask 0.25 0.3 0.3 Stencil apertures Copper Solder mask 0.2 0.2 0.3 R0.1 0.2 0.2 0.25 0.25 1.9 0.2 0.25 1.9 1.9 0.3 Copper 0.25 0.2 0.2 0.25 0.2 0.2 0.3 0.2 0.2 1.9 0.3 1.4 0.2 1.4 0.2 1.4 0.2 1.4 0.25 0.25 R0.1 Stencil apertures TSLP-7-1-FP V01 Figure 9-2 Footprint AZ AX BGB707L7ESD Type Code Figure 9-3 Marking Layout (top view) 0.5 8 2.18 4 Pin 1 marking 1.45 TSLP-7-1-TP V03 Figure 9-4 Tape Dimensions Data Sheet 32 Revision 3.3, 2012-11-09 w w w . i n f i n e o n . c o m Published by Infineon Technologies AG