BGS12P2L6E6327XTSA1

BGS12P2L6 S P DT ge n e ra l p u r p o s e s w i tc h f o r h i g h p o w e r a p p l i c at i o n s Features • High linearity up to 37 dBm input power • Low insertion loss and high port to port isolation up to 6 GHz • Low current consumption • On-chip control logic • Ultra low profile leadless plastic package • RoHS and WEEE compliant package 0.7 x 1.1 mm2 Potential Applications The BGS12P2L6 is a general purpose RF MOS power switch, designed to cover a broad range of high power applications from 0.05 to 6 GHz, mainly in the transmit path of GSM, WCDMA and LTE mobile phones. Product Validation Qualified for industrial applications according to the relevant tests of JEDEC47/20/22. Block Diagram www.infineon.com Please read the Important Notice and Warnings at the end of this document Revision 2.0 2019-07-04 BGS12P2L6 SPDT general purpose switch for high power applications Table of Contents Table of Contents 1 Features 2 2 Maximum Ratings 3 3 Operation Ranges 4 4 RF Characteristics 5 5 Application Information 8 6 Package Information 9 1 Revision 2.0 2019-07-04 BGS12P2L6 SPDT general purpose switch for high power applications Features 1 Features • RF CMOS SPDT antenna switch with power handling capability of up to 37 dBm • Suitable for multi-mode LTE and WCDMA applications • Low insertion loss and harmonics generation • 0.05 to 6 GHz coverage • High port-to-port isolation • No blocking capacitors required if no DC applied on RF lines • On-chip control logic • Leadless and halogen free package TSLP-6-4 with lateral size of 0.7 mm x 1.1 mm and thickness of 0.31 mm • No power supply decoupling required • High EMI robustness • RoHS and WEEE compliant package Description The BGS12P2L6 is a general purpose RF MOS power switch, designed to cover a broad range of high power applications from 0.05 to 6 GHz, mainly in the transmit path of GSM, WCDMA and LTE mobile phones. The chip integrates on-chip CMOS logic driven by a simple, single-pin CMOS or TTL compatible control input signal. Unlike GaAs technology, external DC blocking capacitors at the RF ports are only required if DC voltage is applied externally. The BGS12P2L6 RF switch is manufactured in Infineon’s patented MOS technology, offering the performance of GaAs with the economy and integration of conventional CMOS including the inherent higher ESD robustness. The device has a very small size of only 0.7 x 1.1 mm 2 and a maximum height of 0.31 mm. Table 1: Ordering Information Type Marking Package BGS12P2L6 U TSLP-6-4 2 Revision 2.0 2019-07-04 BGS12P2L6 SPDT general purpose switch for high power applications Maximum Ratings 2 Maximum Ratings Table 2: Maximum Ratings at T A = 25 ◦C, unless otherwise specified Parameter Symbol Min. Typ. Max. Frequency Range1) f 0.05 – Supply voltage V DD -0.5 RF input power at all RF ports Values Unit Note / Test Condition 6 GHz – – 3.6 V – PRF,max – – 38 dBm VSWR 1:1 2) V ESD,CDM -1 – +1 kV – 3) V ESD,HBM -1 – +1 kV – -8 – +8 kV ESD capability, CDM ESD capability, HBM Each single RF-in/out port verESD capability RF ports4) sus GND, with 27 nH shunt inductor V ESD,RF Each single RF-in/out port ver-6 – +6 kV sus GND, with 56 nH shunt inductor Thermal resistance junction - RthJS – 68 80 K/W – V RFDC 0 – 0 V No DC voltages allowed on RF- T STG -55 – 150 ◦ C – Tj – – 125 ◦ C – soldering point Maximum DC-voltage on RF ports and RF-Ground Storage temperature range Junction temperature Ports 1) There is also a DC connection between switched paths. The DC voltage at RF ports VRFDC has to be 0 V. 2) Field-Induced Charged-Device Model ANSI/ESDA/JEDEC JS-002. Simulates charging/discharging events that occur in production equipment and processes. Potential for CDM ESD events occurs whenever there is metal-to-metal contact in manufacturing. 3) Human Body Model ANSI/ESDA/JEDEC JS-001 (R = 1.5 kΩ, C = 100 pF). 4) IEC 61000-4-2 (R = 330 Ω, C = 150 pF), contact discharge. Warning: Stresses above the max. values listed here may cause permanent damage to the device. Maximum ratings are absolute ratings; exceeding only one of these values may cause irreversible damage to the integrated circuit. Exposure to conditions at or below absolute maximum rating but above the specified maximum operation conditions may affect device reliability and life time. Functionality of the device might not be given under these conditions. 3 Revision 2.0 2019-07-04 BGS12P2L6 SPDT general purpose switch for high power applications Operation Ranges 3 Operation Ranges Table 3: Operation Ranges, at T A = −40 ◦C...85 ◦C, V DD = 1.65 V...3.4 V Parameter Symbol Min. Typ. Max. Supply voltage V DD 1.65 1.8 Supply current IDD – Control voltage Low V Ctrl,L Control voltage High Control current Ambient temperature Values Unit Note / Test Condition 3.4 V – 65 110 µA Operating State -0.3 – 0.43 V – V Ctrl,H 1.35 – V DD V – ICtrl – 2 10 nA – TA -40 25 85 ◦ C – Table 4: RF Input Power Parameter Symbol RF input power at all RF ports PRF Values Min. Typ. Max. – – 37 4 Unit Note / Test Condition dBm VSWR 1:1 / 50 Ω Revision 2.0 2019-07-04 BGS12P2L6 SPDT general purpose switch for high power applications RF Characteristics 4 RF Characteristics Table 5: RF Characteristics1) at TA = −40 ◦C...85 ◦C, PRF = 0 dBm, VDD= 1.65 V...3.4 V, unless otherwise specified Parameter Symbol Values Unit Note / Test Condition Min. Typ. Max. – 0.20 0.23 dB 617–960 MHz – 0.25 0.34 dB 960–2170 MHz – 0.31 0.39 dB 2170–2700 MHz – 0.39 0.47 dB 3300–3800 MHz – 0.42 0.48 dB 3800–4200 MHz – 0.47 0.55 dB 4400–5000 MHz – 0.51 0.64 dB 5150–5925 MHz – 0.20 0.28 dB 617–960 MHz – 0.25 0.38 dB 960–2170 MHz – 0.31 0.40 dB 2170–2700 MHz – 0.39 0.50 dB 3300–3800 MHz – 0.42 0.52 dB 3800–4200 MHz – 0.47 0.62 dB 4400–5000 MHz – 0.51 0.74 dB 5150–5925 MHz 23 27 – dB 617–960 MHz 17 22 – dB 960–2170 MHz 16 19 – dB 2170–2700 MHz 15 17 – dB 3300–3800 MHz 15 16 – dB 3800–4200 MHz 14 15 – dB 4400–5000 MHz 12 14 – dB 5150–5925 MHz 42 45 – dB 617–960 MHz 34 39 – dB 960–2170 MHz 32 35 – dB 2170–2700 MHz 29 32 – dB 3300–3800 MHz 28 31 – dB 3800–4200 MHz 26 29 – dB 4400–5000 MHz 24 27 – dB 5150–5925 MHz 48 54 – dB 617–960 MHz 40 47 – dB 960–2170 MHz 38 43 – dB 2170–2700 MHz 35 39 – dB 3300–3800 MHz 34 37 – dB 3800–4200 MHz 31 35 – dB 4400–5000 MHz 30 34 – dB 5150–5925 MHz Insertion Loss1) at TA = 25 ◦C, VDD= 1.8 V All TRx Ports Insertion Loss IL 1) All TRx Ports Return Loss 1) All TRx Ports Isolation IL RL 1) RFin to RF1/RF2 Port RF1 to RF2 Port / RF2 to RF1 Port ISORFin−RFx ISORFx−RFx 1) Measured on Application board, without any matching components. 5 Revision 2.0 2019-07-04 BGS12P2L6 SPDT general purpose switch for high power applications RF Characteristics Table 6: RF Characteristics1) at TA = −40 ◦C...85 ◦C, PRF = 0 dBm, Supply Voltage VDD= 1.65 V...3.4 V, unless otherwise specified Parameter Symbol Values Min. Typ. Unit Note / Test Condition Max. Harmonic Generation on all RF Ports2) at 50 Ω, VSWR 1:1, unless otherwise specified 2nd Harmonic 3 nd PH2 Harmonic Intercept Point PH3 – -71 -62 dBm 617–960 MHz, 35 dBm – -75 -68 dBm 960–2170 MHz, 33 dBm – -83 -78 dBm 2170–2700 MHz, 26 dBm – – -78 -78 -73 -72 dBm dBm 3300–3800 MHz, 26 dBm 3800–4200 MHz, 26 dBm – -78 -73 dBm 4400–5000 MHz, 26 dBm – -76 -65 dBm 5150–5925 MHz, 26 dBm – -57 -52 dBm 617–960 MHz, 35 dBm – -62 -57 dBm 960–2170 MHz, 33 dBm – -81 -75 dBm 2170–2700 MHz, 26 dBm – -80 -75 dBm 3300–3800 MHz, 26 dBm – -80 -75 dBm 3800–4200 MHz, 26 dBm – -79 -73 dBm 4400–5000 MHz, 26 dBm – -79 -73 dBm 5150–5925 MHz, 26 dBm 1) IIP2 IIP2 124 130 – dBm Testcases see Table 7 IIP3 IIP3 71 74 – dBm Testcases see Table 8 1) Measured on Application board, without any matching components. 2) Measured on Application board, with 1 nF blocking capacity between V DD to GND and V CTRL to GND. Table 7: IMD2 Testcases Band Symbol In-Band Blocker Blocker Blocker Blocker Frequency Frequency 1 Power 1 Frequency 2 Power 2 (MHz) (MHz) (dBm) (MHz) (dBm) Band 1 B1IMD2,OOB 2140 1950 24 4090 -15 Band 5 B5IMD2,ULCA 881.5 836.5 20 1718 20 Band 7 B7IMD2,OOB 2652 2535 20 5187 20 Symbol In-Band Blocker Blocker Blocker Blocker Frequency Frequency 1 Power 1 Frequency 2 Power 2 (MHz) (MHz) (dBm) (MHz) (dBm) Table 8: IMD3 Testcases Band Band 1 B1IMD3,ULCA 2140 1950 20 1760 20 Band 7 B7IMD3,ULCA 2655 2535 20 2415 20 Band 8 B8IMD3,ULCA 942 897 20 852 20 6 Revision 2.0 2019-07-04 BGS12P2L6 SPDT general purpose switch for high power applications RF Characteristics Table 9: Switchting Time at TA = 25 ◦C, PRF = 0 dBm, Supply Voltage VDD= 1.65 V...3.4 V, unless otherwise specified Parameter Symbol Switching Time Values Min. Typ. Max. – 1.5 2.5 Unit Note / Test Condition µs Time between RF states in ac- 1) Switching Time tST tive mode VCtrl,H Min. or VCtrl,L Max. level to 90% RF-signal RF Rise Time tRT – 0.7 1.5 µs Power Up Settling Time tPUP – 5 7.5 µs Time between 10% to 90% RF Signal Time from VDD Min. power level to 90% RF-signal 1) On application board without any matching components. RF Switch Products with GPIO Ctrl. I/F One PIN for VDD & One PIN for VCtrl with tRT VDD for internal use only VDD Min. VCtrl tPUP VCtrl_H Min. VCtrl_L Max. tST RF Path A tST 90% 90% tRT 90% RF Path B 10% Figure 1: CTRL to RF Time 2018-10-06 confidential Copyright © Infineon Technologies AG 2018. All rights reserved. 7 Infineon Proprietary 15 Revision 2.0 2019-07-04 BGS12P2L6 SPDT general purpose switch for high power applications Application Information 5 Application Information Pin Configuration and Function Figure 2: BGS12P2L6 Pin Configuration (top view) Table 10: Pin Definition and Function Pin No. Name Function 1 RF2 RF port 2 2 GND Ground 3 RF1 RF port 1 4 VDD Supply voltage 5 RFin RF port In 6 CTRL Control pin Table 11: Truth Table Switch Control Switched Paths CTRL RFIN - RF1 0 RFIN - RF2 1 8 Revision 2.0 2019-07-04 BGS12P2L6 SPDT general purpose switch for high power applications Package Information 6 Package Information Figure 3: TSLP-6-4 Package Outline (Top, Side and Bottom Views) NS M D 0.4 0.4 0.25 0.25 0.4 0.4 0.25 0.25 (stencil thickness 100 µm) Copper Stencil apertures Solder mask Figure 4: Footprint Recommendation Table 12: Mechanical Data Parameter Symbol Value Unit X-Dimension X 0.7 ±0.05 mm Y-Dimension Y 1.1 ±0.05 mm Size Size 0.77 mm2 Height H 0.31 +0.01/−0.02 mm 9 Revision 2.0 2019-07-04 BGS12P2L6 SPDT general purpose switch for high power applications Package Information Figure 5: Marking Specification (Top View): Monthly Date code specified in Table 13 Table 13: Monthly Date Code Marking Month 2015 2016 2017 2018 2019 2020 2021 2022 2023 2024 2025 2026 1 a p A P a p A P a p A P 2 b q B Q b q B Q b q B Q 3 c r C R c r C R c r C R 4 d s D S d s D S d s D S 5 e t E T e t E T e t E T 6 f u F U f u F U f u F U 7 g v G V g v G V g v G V 8 h x H X h x H X h x H X 9 j y J Y j y J Y j y J Y 10 k z K Z k z K Z k z K Z 11 l 2 L 4 l 2 L 4 l 2 L 4 12 n 3 N 5 n 3 N 5 n 3 N 5 Pin 1 marking 8 1.25 0.5 2 0.85 Figure 6: TSLP-6-4 Carrier Tape Drawing (Top and Side Views) 10 Revision 2.0 2019-07-04 BGS12P2L6 SPDT general purpose switch for high power applications Revision History Target, Revision v1.1, 2019-06-11 Page or Item Subjects (major changes since previous revision) Revision 2.0, 2019-07-04 5-7 RF Characteristics Table 6 11 Revision 2.0 2019-07-04 Other Trademarks All referenced product or service names and trademarks are the property of their respective owners. Edition 2019-07-04 Published by Infineon Technologies AG 81726 Munich, Germany c 2019 Infineon Technologies AG. All Rights Reserved. Do you have a question about any aspect of this document? Email: erratum@infineon.com IMPORTANT NOTICE The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics ("Beschaffenheitsgarantie"). With respect to any examples, hints or any typical values stated herein and/or any information regarding the application of the product, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation warranties of non-infringement of intellectual property rights of any third party. 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