BSC016N06NST
MOSFET
OptiMOSTMPower-MOSFET,60V
TDSON-8FL(enlargedsourceinterconnection)
8
Features
•Optimizedforsynchronousrectification
•175°Crated
•100%avalanchetested
•Superiorthermalresistance
•N-channel
•QualifiedaccordingtoJEDEC1)fortargetapplications
•Pb-freeleadplating;RoHScompliant
•Halogen-freeaccordingtoIEC61249-2-21
•Highersolderjointreliabilityduetoenlargedsourceinterconnection
Table1KeyPerformanceParameters
Parameter
Value
Unit
VDS
60
V
RDS(on),max
1.6
mΩ
ID
234
A
QOSS
81
nC
QG(0V..10V)
71
nC
Type/OrderingCode
Package
BSC016N06NST
PG-TDSON-8 FL
1)
Marking
016N06NT
1
2
7
6
5
5
3
4
4
3
2
6
7
8
1
S1
8D
S2
7D
S3
6D
G4
5D
RelatedLinks
-
J-STD20 and JESD22
Final Data Sheet
1
Rev.2.2,2020-08-13
OptiMOSTMPower-MOSFET,60V
BSC016N06NST
TableofContents
Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
Maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
Thermal characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
Electrical characteristics diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
Package Outlines . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
Revision History . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
Trademarks . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
Disclaimer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
Final Data Sheet
2
Rev.2.2,2020-08-13
OptiMOSTMPower-MOSFET,60V
BSC016N06NST
1Maximumratings
atTA=25°C,unlessotherwisespecified
Table2Maximumratings
Parameter
Symbol
Continuous drain current1)
Values
Unit
Note/TestCondition
234
164
31
A
VGS=10V,TC=25°C
VGS=10V,TC=100°C
VGS=10V,TA=25°C,RthJA=50K/W2)
-
936
A
TC=25°C
-
-
380
mJ
ID=50A,RGS=25Ω
VGS
-20
-
20
V
-
Power dissipation
Ptot
-
-
167
3.0
W
TC=25°C
TA=25°C,RthJA=50K/W
Operating and storage temperature
Tj,Tstg
-55
-
175
°C
-
Unit
Note/TestCondition
Min.
Typ.
Max.
ID
-
-
Pulsed drain current3)
ID,pulse
-
Avalanche energy, single pulse4)
EAS
Gate source voltage
2Thermalcharacteristics
Table3Thermalcharacteristics
Parameter
Symbol
Thermal resistance, junction - case,
bottom
Values
Min.
Typ.
Max.
RthJC
-
0.5
0.9
K/W
-
Thermal resistance, junction - case,
top
RthJC
-
-
20
K/W
-
Device on PCB,
6 cm2 cooling area2)
RthJA
-
-
50
K/W
-
1)
Rating refers to the product only with datasheet specified absolute maximum values, maintaining case temperature
at 25°C. For higher case temperature please refer to Diagram 2. De-rating will be required based on the actual
environmental conditions.
2)
Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm2 (one layer, 70 µm thick) copper area for drain
connection. PCB is vertical in still air.
3)
See Diagram 3 for more detailed information
4)
See Diagram 13 for more detailed information
Final Data Sheet
3
Rev.2.2,2020-08-13
OptiMOSTMPower-MOSFET,60V
BSC016N06NST
3Electricalcharacteristics
atTj=25°C,unlessotherwisespecified
Table4Staticcharacteristics
Parameter
Symbol
Drain-source breakdown voltage
Values
Unit
Note/TestCondition
-
V
VGS=0V,ID=1mA
2.8
3.3
V
VDS=VGS,ID=95µA
-
0.5
10
1
100
µA
VDS=60V,VGS=0V,Tj=25°C
VDS=60V,VGS=0V,Tj=125°C
IGSS
-
10
100
nA
VGS=20V,VDS=0V
Drain-source on-state resistance
RDS(on)
-
1.4
1.9
1.6
2.4
mΩ
VGS=10V,ID=50A
VGS=6V,ID=12.5A
Gate resistance1)
RG
-
1.9
2.9
Ω
-
Transconductance
gfs
70
140
-
S
|VDS|>2|ID|RDS(on)max,ID=50A
Unit
Note/TestCondition
Min.
Typ.
Max.
V(BR)DSS
60
-
Gate threshold voltage
VGS(th)
2.1
Zero gate voltage drain current
IDSS
Gate-source leakage current
Table5Dynamiccharacteristics1)
Parameter
Symbol
Input capacitance
Values
Min.
Typ.
Max.
Ciss
3900
5200
6500
pF
VGS=0V,VDS=30V,f=1MHz
Output capacitance
Coss
900
1200
1500
pF
VGS=0V,VDS=30V,f=1MHz
Reverse transfer capacitance
Crss
14
48
96
pF
VGS=0V,VDS=30V,f=1MHz
Turn-on delay time
td(on)
-
19
38
ns
VDD=30V,VGS=10V,ID=30A,
RG,ext=1.6Ω
Rise time
tr
-
9
18
ns
VDD=30V,VGS=10V,ID=30A,
RG,ext=1.6Ω
Turn-off delay time
td(off)
-
35
70
ns
VDD=30V,VGS=10V,ID=30A,
RG,ext=1.6Ω
Fall time
tf
-
9
18
ns
VDD=30V,VGS=10V,ID=30A,
RG,ext=1.6Ω
Unit
Note/TestCondition
Table6Gatechargecharacteristics2)
Parameter
Symbol
Gate to source charge
Values
Min.
Typ.
Max.
Qgs
16
22
30
nC
VDD=30V,ID=50A,VGS=0to10V
Gate charge at threshold
Qg(th)
10
14
19
nC
VDD=30V,ID=50A,VGS=0to10V
Gate to drain charge
Qgd
8.8
13
20
nC
VDD=30V,ID=50A,VGS=0to10V
Switching charge
Qsw
14
21
30
nC
VDD=30V,ID=50A,VGS=0to10V
Gate charge total
Qg
58
71
95
nC
VDD=30V,ID=50A,VGS=0to10V
Gate plateau voltage
Vplateau
3.7
4.3
4.9
V
VDD=30V,ID=50A,VGS=0to10V
Gate charge total, sync. FET
Qg(sync)
49
62
86
nC
VDS=0.1V,VGS=0to10V
Output charge
Qoss
60
81
102
nC
VDD=30V,VGS=0V
1)
2)
Defined by design. Not subject to production test
See ″Gate charge waveforms″ for parameter definition. Defined by design, not subject to production test
Final Data Sheet
4
Rev.2.2,2020-08-13
OptiMOSTMPower-MOSFET,60V
BSC016N06NST
Table7Reversediode
Parameter
Symbol
Diode continuous forward current
Diode pulse current
Diode forward voltage
1)
Reverse recovery time
1)
Reverse recovery charge
1)
Values
Unit
Note/TestCondition
167
A
TC=25°C
-
936
A
TC=25°C
-
0.9
1.2
V
VGS=0V,IF=50A,Tj=25°C
trr
24
61
98
ns
VR=30V,IF=50A,diF/dt=100A/µs
Qrr
39
78
156
nC
VR=30V,IF=50A,diF/dt=100A/µs
Min.
Typ.
Max.
IS
-
-
IS,pulse
-
VSD
Defined by design. Not subject to production test
Final Data Sheet
5
Rev.2.2,2020-08-13
OptiMOSTMPower-MOSFET,60V
BSC016N06NST
4Electricalcharacteristicsdiagrams
Diagram1:Powerdissipation
Diagram2:Draincurrent
180
240
160
200
140
160
100
ID[A]
Ptot[W]
120
80
60
120
80
40
40
20
0
0
25
50
75
100
125
150
175
0
200
0
25
50
75
TC[°C]
100
125
150
175
200
TC[°C]
Ptot=f(TC)
ID=f(TC);VGS≥10V
Diagram3:Safeoperatingarea
Diagram4:Max.transientthermalimpedance
3
101
10
1 µs
10 µs
102
100
100 µs
0.5
ZthJC[K/W]
ID[A]
1 ms
10 ms
DC
1
10
0.2
10
0.1
-1
0.05
0.02
0.01
100
10-1
10-1
10-2
100
101
102
10-3
single pulse
10-6
10-5
10-4
VDS[V]
10-2
10-1
100
tp[s]
ID=f(VDS);TC=25°C;D=0;parameter:tp
Final Data Sheet
10-3
ZthJC=f(tp);parameter:D=tp/T
6
Rev.2.2,2020-08-13
OptiMOSTMPower-MOSFET,60V
BSC016N06NST
Diagram5:Typ.outputcharacteristics
Diagram6:Typ.drain-sourceonresistance
400
10 V
350
5V
3.0
6V
8V
300
5.5 V
2.5
5.5 V
RDS(on)[mΩ]
ID[A]
250
200
150
6V
2.0
8V
1.5
5V
10 V
100
1.0
50
0
0
1
0.5
2
0
50
100
150
VDS[V]
200
250
300
350
400
ID[A]
ID=f(VDS);Tj=25°C;parameter:VGS
RDS(on)=f(ID);Tj=25°C;parameter:VGS
Diagram7:Typ.transfercharacteristics
Diagram8:Typ.forwardtransconductance
200
320
160
240
120
ID[A]
gfs[S]
400
160
80
80
40
175 °C
0
0
1
2
3
4
25 °C
5
6
0
0
VGS[V]
40
60
80
100
ID[A]
ID=f(VGS);|VDS|>2|ID|RDS(on)max;parameter:Tj
Final Data Sheet
20
gfs=f(ID);Tj=25°C
7
Rev.2.2,2020-08-13
OptiMOSTMPower-MOSFET,60V
BSC016N06NST
Diagram9:Drain-sourceon-stateresistance
Diagram10:Typ.gatethresholdvoltage
3.5
4.0
3.5
3.0
3.0
2.5
max
2.0
VGS(th)[V]
RDS(on)[mΩ]
950 µA
2.5
typ
1.5
95 µA
2.0
1.5
1.0
1.0
0.5
0.5
0.0
-60
-20
20
60
100
140
0.0
-60
180
-20
20
Tj[°C]
60
100
140
180
Tj[°C]
RDS(on)=f(Tj);ID=50A;VGS=10V
VGS(th)=f(Tj);VGS=VDS
Diagram11:Typ.capacitances
Diagram12:Forwardcharacteristicsofreversediode
4
103
10
25 °C
25 °C, max
175 °C
175 °C, max
Ciss
Coss
102
IF[A]
C[pF]
103
102
101
Crss
101
0
10
20
30
40
50
60
100
0.0
VDS[V]
1.0
1.5
VSD[V]
C=f(VDS);VGS=0V;f=1MHz
Final Data Sheet
0.5
IF=f(VSD);parameter:Tj
8
Rev.2.2,2020-08-13
OptiMOSTMPower-MOSFET,60V
BSC016N06NST
Diagram13:Avalanchecharacteristics
Diagram14:Typ.gatecharge
2
10
12
30 V
10
12 V
25 °C
8
150 °C
VGS[V]
IAV[A]
100 °C
48 V
101
6
4
2
100
100
101
102
103
tAV[µs]
0
0
20
40
60
80
Qgate[nC]
IAS=f(tAV);RGS=25Ω;parameter:Tj(start)
VGS=f(Qgate);ID=50Apulsed;parameter:VDD
Diagram15:Drain-sourcebreakdownvoltage
Diagram Gate charge waveforms
70
68
66
64
VBR(DSS)[V]
62
60
58
56
54
52
50
-60
-20
20
60
100
140
180
Tj[°C]
VBR(DSS)=f(Tj);ID=1mA
Final Data Sheet
9
Rev.2.2,2020-08-13
OptiMOSTMPower-MOSFET,60V
BSC016N06NST
5PackageOutlines
DOCUMENT NO.
Z8B000193699
REVISION
03
DIMENSION
A
A1
b
D
D1
D2
E
E1
E2
e
L
M
MILLIMETERS
MIN.
MAX.
0.90
1.20
0.15
0.35
0.26
0.54
4.80
5.35
3.70
4.40
0.02
0.23
5.70
6.10
5.90
6.42
3.88
4.42
1.27
0.69
0.90
0.45
0.69
SCALE 10:1
0
1
2
3mm
EUROPEAN PROJECTION
ISSUE DATE
19.06.2019
Figure1OutlinePG-TDSON-8FL,dimensionsinmm
Final Data Sheet
10
Rev.2.2,2020-08-13
OptiMOSTMPower-MOSFET,60V
BSC016N06NST
PG-TDSON-8FL: RecommenGHd BoDrdpads & Apertures
Figure 2
Final Data Sheet
Outline Boardpads (TDSON-8 FL)
11
Rev.2.2,2020-08-13
OptiMOS TM Power-MOSFET , 60 V
BSC016N06NST
Figure 3
Final Data Sheet
Outline Tape (TDSON-8 FL )
12
Rev. 2.2, 2020-08-13
OptiMOS TM Power-MOSFET , 60 V
BSC016N06NST
Revision History
BSC016N06NST
Revision: 2020-08-13, Rev. 2.2
Previous Revision
Revision
Date
Subjects (major changes since last revision)
2.0
2017-03-01
Release of final version
2.1
2019-10-22
Update package drawings
2.2
2020-08-13
Update current rating
Trademarks
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© 2020 Infineon Technologies AG
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Final Data Sheet
13
Rev. 2.2, 2020-08-13