BSC037N08NS5TATMA1

BSC037N08NS5T MOSFET OptiMOSTM5Power-Transistor,80V SuperSO8 8 Features •OptimizedforhighperformanceSMPS,e.g.sync.rec. •100%avalanchetested •Superiorthermalresistance •N-channel •Pb-freeleadplating;RoHScompliant •Halogen-freeaccordingtoIEC61249-2-21 7 5 6 4 1 2 3 6 5 3 2 4 7 8 1 Productvalidation FullyqualifiedaccordingtoJEDECforIndustrialApplications Table1KeyPerformanceParameters Parameter Value Unit VDS 80 V RDS(on),max 3.7 mΩ ID 136 A Qoss 56 nC QG(0V..10V) 46 nC Type/OrderingCode Package BSC037N08NS5T PG-TDSON-8 Final Data Sheet Marking 037N08NT 1 S1 8D S2 7D S3 6D G4 5D RelatedLinks - Rev.2.2,2020-06-17 OptiMOSTM5Power-Transistor,80V BSC037N08NS5T TableofContents Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Thermal characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 Electrical characteristics diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 Package Outlines . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 Revision History . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 Trademarks . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 Disclaimer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 Final Data Sheet 2 Rev.2.2,2020-06-17 OptiMOSTM5Power-Transistor,80V BSC037N08NS5T 1Maximumratings atTA=25°C,unlessotherwisespecified Table2Maximumratings Parameter Symbol Continuous drain current1) Values Unit Note/TestCondition 136 96 22 A VGS=10V,TC=25°C VGS=10V,TC=100°C VGS=10V,TA=25°C,RthJA=50K/W2) - 544 A TC=25°C - - 140 mJ ID=50A,RGS=25Ω VGS -20 - 20 V - Power dissipation Ptot - - 136 3.0 W TC=25°C TA=25°C,RthJA=50K/W2) Operating and storage temperature Tj,Tstg -55 - 175 °C IEC climatic category; DIN IEC 68-1: 55/175/56 Unit Note/TestCondition Min. Typ. Max. ID - - Pulsed drain current3) ID,pulse - Avalanche energy, single pulse4) EAS Gate source voltage 2Thermalcharacteristics Table3Thermalcharacteristics Parameter Symbol Thermal resistance, junction - case, bottom Values Min. Typ. Max. RthJC - 0.7 1.1 K/W - Thermal resistance, junction - case, top RthJC - - 20 K/W - Device on PCB, 6 cm2 cooling area2) RthJA - - 50 K/W - 1) Rating refers to the product only with datasheet specified absolute maximum values, maintaining case temperature at 25°C. For higher case temperature please refer to Diagram 2. De-rating will be required based on the actual environmental conditions. 2) Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm2 (one layer, 70 µm thick) copper area for drain connection. PCB is vertical in still air. 3) See Diagram 3 for more detailed information 4) See Diagram 13 for more detailed information Final Data Sheet 3 Rev.2.2,2020-06-17 OptiMOSTM5Power-Transistor,80V BSC037N08NS5T 3Electricalcharacteristics atTj=25°C,unlessotherwisespecified Table4Staticcharacteristics Parameter Symbol Drain-source breakdown voltage Values Unit Note/TestCondition - V VGS=0V,ID=1mA 3 3.8 V VDS=VGS,ID=72µA - 0.1 10 1 100 µA VDS=80V,VGS=0V,Tj=25°C VDS=80V,VGS=0V,Tj=125°C IGSS - 10 100 nA VGS=20V,VDS=0V Drain-source on-state resistance RDS(on) - 3.2 4.4 3.7 5.3 mΩ VGS=10V,ID=50A VGS=6V,ID=25A Gate resistance1) RG - 1.3 2.0 Ω - Transconductance gfs 47 94 - S |VDS|>2|ID|RDS(on)max,ID=50A Unit Note/TestCondition Min. Typ. Max. V(BR)DSS 80 - Gate threshold voltage VGS(th) 2.2 Zero gate voltage drain current IDSS Gate-source leakage current Table5Dynamiccharacteristics Parameter Symbol Input capacitance1) Values Min. Typ. Max. Ciss - 3200 4200 pF VGS=0V,VDS=40V,f=1MHz Coss - 530 690 pF VGS=0V,VDS=40V,f=1MHz Reverse transfer capacitance Crss - 25 44 pF VGS=0V,VDS=40V,f=1MHz Turn-on delay time td(on) - 14 - ns VDD=40V,VGS=10V,ID=50A, RG,ext=3Ω Rise time tr - 10 - ns VDD=40V,VGS=10V,ID=50A, RG,ext=3Ω Turn-off delay time td(off) - 26 - ns VDD=40V,VGS=10V,ID=50A, RG,ext=3Ω Fall time tf - 7 - ns VDD=40V,VGS=10V,ID=50A, RG,ext=3Ω Unit Note/TestCondition Output capacitance1) 1) Table6Gatechargecharacteristics2) Parameter Symbol Gate to source charge Gate charge at threshold Values Min. Typ. Max. Qgs - 15 - nC VDD=40V,ID=50A,VGS=0to10V Qg(th) - 9.0 - nC VDD=40V,ID=50A,VGS=0to10V Gate to drain charge Qgd - 10 15 nC VDD=40V,ID=50A,VGS=0to10V Switching charge Qsw - 16 - nC VDD=40V,ID=50A,VGS=0to10V Gate charge total Qg - 46 58 nC VDD=40V,ID=50A,VGS=0to10V Gate plateau voltage Vplateau - 4.8 - V VDD=40V,ID=50A,VGS=0to10V Gate charge total, sync. FET Qg(sync) - 40 - nC VDS=0.1V,VGS=0to10V Qoss - 56 74 nC VDD=40V,VGS=0V 1) 1) 1) Output charge 1) 2) Defined by design. Not subject to production test See ″Gate charge waveforms″ for parameter definition Final Data Sheet 4 Rev.2.2,2020-06-17 OptiMOSTM5Power-Transistor,80V BSC037N08NS5T Table7Reversediode Parameter Symbol Diode continuous forward current Diode pulse current Diode forward voltage 1) Reverse recovery time 1) Reverse recovery charge 1) Values Unit Note/TestCondition 124 A TC=25°C - 544 A TC=25°C - 0.9 1.1 V VGS=0V,IF=50A,Tj=25°C trr - 41 83 ns VR=40V,IF=50A,diF/dt=100A/µs Qrr - 36 72 nC VR=40V,IF=50A,diF/dt=100A/µs Min. Typ. Max. IS - - IS,pulse - VSD Defined by design. Not subject to production test Final Data Sheet 5 Rev.2.2,2020-06-17 OptiMOSTM5Power-Transistor,80V BSC037N08NS5T 4Electricalcharacteristicsdiagrams Diagram2:Draincurrent 140 140 120 120 100 100 80 80 ID[A] Ptot[W] Diagram1:Powerdissipation 60 60 40 40 20 20 0 0 25 50 75 100 125 150 175 0 200 0 25 50 75 TC[°C] 100 125 150 175 200 TC[°C] Ptot=f(TC) ID=f(TC);VGS≥10V Diagram3:Safeoperatingarea Diagram4:Max.transientthermalimpedance 3 101 10 1 µs 10 µs 102 100 1 ms 101 0.5 ZthJC[K/W] ID[A] 100 µs 10 ms DC 0.2 0.1 10 -1 0.05 0.02 100 0.01 single pulse 10-1 10-1 100 101 102 10-2 10-5 10-4 VDS[V] 10-2 10-1 100 tp[s] ID=f(VDS);TC=25°C;D=0;parameter:tp Final Data Sheet 10-3 ZthJC=f(tp);parameter:D=tp/T 6 Rev.2.2,2020-06-17 OptiMOSTM5Power-Transistor,80V BSC037N08NS5T Diagram5:Typ.outputcharacteristics Diagram6:Typ.drain-sourceonresistance 400 8 8V 10 V 360 5V 7 7V 320 6V 6 280 RDS(on)[mΩ] ID[A] 7V 5 240 6V 200 160 4 8V 10 V 3 120 2 80 5V 1 40 4.5 V 0 0.0 0.5 1.0 1.5 2.0 2.5 0 3.0 0 50 100 150 VDS[V] 200 250 RDS(on)=f(ID);Tj=25°C;parameter:VGS Diagram7:Typ.transfercharacteristics Diagram8:Typ.forwardtransconductance 320 200 280 175 240 150 200 125 gfs[S] ID[A] ID=f(VDS);Tj=25°C;parameter:VGS 160 75 80 50 40 25 175 °C 0 2 400 25 °C 4 6 8 0 0 50 VGS[V] 100 150 200 250 ID[A] ID=f(VGS);|VDS|>2|ID|RDS(on)max;parameter:Tj Final Data Sheet 350 100 120 0 300 ID[A] gfs=f(ID),VDS=3V,Tj=25°C 7 Rev.2.2,2020-06-17 OptiMOSTM5Power-Transistor,80V BSC037N08NS5T Diagram9:Drain-sourceon-stateresistance Diagram10:Typ.gatethresholdvoltage 7.0 5 max typ 6.0 4 720 µA 3 4.0 VGS(th)[V] RDS(on)[mΩ] 5.0 3.0 72 µA 2 2.0 1 1.0 0.0 -60 -20 20 60 100 140 0 -60 180 -20 20 Tj[°C] 60 100 140 180 Tj[°C] RDS(on)=f(Tj),ID=50A,VGS=10V VGS(th)=f(Tj);VGS=VDS Diagram11:Typ.capacitances Diagram12:Forwardcharacteristicsofreversediode 4 103 10 25 °C 175 °C 175 °C, max 25 °C, max Ciss 103 102 IF[A] C[pF] Coss 102 101 Crss 101 0 20 40 60 80 100 0.00 0.25 VDS[V] 0.75 1.00 1.25 1.50 VSD[V] C=f(VDS);VGS=0V;f=1MHz Final Data Sheet 0.50 IF=f(VSD);parameter:Tj 8 Rev.2.2,2020-06-17 OptiMOSTM5Power-Transistor,80V BSC037N08NS5T Diagram13:Avalanchecharacteristics Diagram14:Typ.gatecharge 2 10 10 9 40 V 8 25 °C 7 101 16 V 64 V 100 °C VGS[V] IAV[A] 6 5 4 0 10 150 °C 3 2 1 10-1 100 101 102 103 tAV[µs] 0 0 10 20 30 40 50 Qgate[nC] IAS=f(tAV);RGS=25Ω;parameter:Tj,start VGS=f(Qgate);ID=50Apulsed;parameter:VDD Diagram15:Drain-sourcebreakdownvoltage Diagram Gate charge waveforms 86 84 VBR(DSS)[V] 82 80 78 76 -60 -20 20 60 100 140 180 Tj[°C] VBR(DSS)=f(Tj);ID=1mA Final Data Sheet 9 Rev.2.2,2020-06-17 OptiMOSTM5Power-Transistor,80V BSC037N08NS5T 5PackageOutlines   Figure1OutlinePG-TDSON-8,dimensionsinmm Final Data Sheet 10 Rev.2.2,2020-06-17 OptiMOSTM5Power-Transistor,80V BSC037N08NS5T   Figure2OutlineFootprint(TDSON-8) Final Data Sheet 11 Rev.2.2,2020-06-17 OptiMOSTM5Power-Transistor,80V BSC037N08NS5T RevisionHistory BSC037N08NS5T Revision:2020-06-17,Rev.2.2 Previous Revision Revision Date Subjects (major changes since last revision) 2.0 2019-01-22 Release of final version 2.1 2019-03-05 Update Diagrams 8 and 9 2.2 2020-06-17 Update current rating Trademarks Allreferencedproductorservicenamesandtrademarksarethepropertyoftheirrespectiveowners. WeListentoYourComments Anyinformationwithinthisdocumentthatyoufeeliswrong,unclearormissingatall?Yourfeedbackwillhelpustocontinuously improvethequalityofthisdocument.Pleasesendyourproposal(includingareferencetothisdocument)to: erratum@infineon.com Publishedby InfineonTechnologiesAG 81726München,Germany ©2020InfineonTechnologiesAG AllRightsReserved. LegalDisclaimer Theinformationgiveninthisdocumentshallinnoeventberegardedasaguaranteeofconditionsorcharacteristics (“Beschaffenheitsgarantie”). Withrespecttoanyexamples,hintsoranytypicalvaluesstatedhereinand/oranyinformationregardingtheapplicationofthe product,InfineonTechnologiesherebydisclaimsanyandallwarrantiesandliabilitiesofanykind,includingwithoutlimitation warrantiesofnon-infringementofintellectualpropertyrightsofanythirdparty. Inaddition,anyinformationgiveninthisdocumentissubjecttocustomer’scompliancewithitsobligationsstatedinthis documentandanyapplicablelegalrequirements,normsandstandardsconcerningcustomer’sproductsandanyuseofthe productofInfineonTechnologiesincustomer’sapplications. Thedatacontainedinthisdocumentisexclusivelyintendedfortechnicallytrainedstaff.Itistheresponsibilityofcustomer’s technicaldepartmentstoevaluatethesuitabilityoftheproductfortheintendedapplicationandthecompletenessoftheproduct informationgiveninthisdocumentwithrespecttosuchapplication. Information Forfurtherinformationontechnology,deliverytermsandconditionsandpricespleasecontactyournearestInfineon TechnologiesOffice(www.infineon.com). Warnings Duetotechnicalrequirements,componentsmaycontaindangeroussubstances.Forinformationonthetypesinquestion, pleasecontactthenearestInfineonTechnologiesOffice. TheInfineonTechnologiescomponentdescribedinthisDataSheetmaybeusedinlife-supportdevicesorsystemsand/or automotive,aviationandaerospaceapplicationsorsystemsonlywiththeexpresswrittenapprovalofInfineonTechnologies,ifa failureofsuchcomponentscanreasonablybeexpectedtocausethefailureofthatlife-support,automotive,aviationand aerospacedeviceorsystemortoaffectthesafetyoreffectivenessofthatdeviceorsystem.Lifesupportdevicesorsystemsare intendedtobeimplantedinthehumanbodyortosupportand/ormaintainandsustainand/orprotecthumanlife.Iftheyfail,itis reasonabletoassumethatthehealthoftheuserorotherpersonsmaybeendangered. Final Data Sheet 12 Rev.2.2,2020-06-17