BSC0911NDATMA1

BSC0911ND Dual N-Channel OptiMOS™ MOSFET Product Summary Features • Dual N-channel OptiMOS™ MOSFET Q1 Q2 25 25 V VGS=10 V 3.2 1.2 mW VGS=4.5 V 4.8 1.7 40 40 VDS • Optimized for high performance Buck converter RDS(on),max • Logic level (4.5V rated) • N-channel ID A 1) • Qualified according to JEDEC for target applications • Pb-free lead plating; RoHS compliant VPhase • Halogen-free according to IEC61249-2-21 Type Package BSC0911ND Marking PG-TISON-8 0911ND Maximum ratings, at T j=25 °C, unless otherwise specified 2) Parameter Continuous drain current Value Symbol Conditions ID Unit Q1 Q2 T C=70 °C, V GS=10 V 40 40 T A=25 °C, V GS=4.5 V3) 18 30 T A=70 °C, V GS=4.5 V3) 14 24 T A=25 °C, V GS=4.5 V4 14 22 A ) Pulsed drain current5) I D,pulse T C=70 °C 160 160 Avalanche energy, single pulse E AS Q1: I D=20 A, Q2: I D=20 A, R GS=25 W 20 160 Gate source voltage V GS Power dissipation P tot ±20 T A=25 °C 2) T A=25 °C, minimum footprint3) Operating and storage temperature T j, T stg J-STD20 and JESD22 2) One transistor active Rev.2.0 2.5 1.0 1.0 W °C 55/150/56 IEC climatic category; DIN IEC 68-1 1) V 2.5 -55 ... 150 mJ page 1 2013-07-30 BSC0911ND Parameter Values Symbol Conditions Unit min. typ. max. Thermal characteristics Thermal resistance, junction case Q1 R thJC - - 3.4 Q2 - - 1.5 Thermal resistance, junction ambient1) Q1 R thJA 6 cm2 cooling area3) - - 50 minimal footprint, steady state4) - - 125 V (BR)DSS V GS=0 V, I D=1 mA 25 - V GS(th) V DS=V GS, I D=250 µA 1.2 1.6 2 V DS=25 V, V GS=0 V, T j=25 °C - - 1 V DS=25 V, V GS=0 V, T j=150 °C - - 100 V GS=20 V, V DS=0 V - - 100 nA - 3.7 4.8 mW - 1.3 1.7 - 2.5 3.2 - 0.9 1.2 Q1 R G 0.5 0.9 1.8 Q2 0.3 0.6 1.2 38 77 - 65 130 - K/W Q2 Q1 Q2 Electrical characteristics, at T j=25 °C, unless otherwise specified Static characteristics Drain-source breakdown voltage Q1 V Q2 Gate threshold voltage Q1 Q2 Zero gate voltage drain current Q1 I DSS Q2 Q1 Q2 Gate-source leakage current Q1 I GSS µA Q2 Drain-source on-state resistance Q1 R DS(on) V GS=4.5 V, I D=20 A Q2 Q1 V GS=10 V, I D=20 A Q2 Gate resistance Transconductance Q1 g fs Q2 |V DS|>2|I D|R DS(on)max, I D=20 A W S 3) Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm2 (one layer, 70 µm thick) copper area for drain connection. PCB is vertical in still air. 4) Device mounted on a minimum pad (one layer, 70 µm thick). One transistor active Rev.2.0 page 2 2013-07-30 BSC0911ND Parameter Values Symbol Conditions Unit min. typ. max. Q1 C iss - 1200 1600 Q2 - 3800 5100 - 470 625 - 1400 1862 Q1 Crss - 51 - Q2 - 150 - Q1 t d(on) - 3.3 Q2 - 3.8 - - 2.8 - - 5.4 - - 15 - Q2 - 25 - Q1 t f - 2.2 - Q2 - 4.0 - Q1 Q gs - 3.0 3.9 Gate to drain charge Q gd - 1.8 2.7 Gate charge total Qg - 7.7 12 Gate plateau voltage V plateau - 2.6 - - 8.8 12 - 5.5 8.3 37 Dynamic characteristics Input capacitance Output capacitance Q1 C oss Q2 Reverse transfer capacitance Turn-on delay time Rise time Q1 t r Q2 Turn-off delay time Fall time Q1 t d(off) V GS=0 V, V DS= 12 V, f =1 MHz V DD=12 V, V GS=10 V, R G=1.6 W, I D=20 A pF ns Gate Charge Characteristics Gate to source charge Gate to source charge Q2 Q gs V DD=12 V, I D=20 A, V GS=0 to 4.5 V Gate to drain charge Q gd Gate charge total Qg 25 Gate plateau voltage V plateau 2.3 Output charge Q1 Q oss V nC V - 9 12 - 28 37 nC V DD=12 V, V GS=0 V Q2 5) nC See figure 3 for more detailed information. Rev.2.0 page 3 2013-07-30 BSC0911ND Parameter Values Symbol Conditions Unit min. typ. max. - - 37 Reverse Diode Diode continuous forward current Q1 I S Q2 A 40 T C=25 °C Diode pulse current Diode forward voltage Q1 I S,pulse - - 160 Q2 - - 160 V GS=0 V, I F=20 A, T j=25 °C - 0.84 - - 0.79 - V R=15 V, I F=I S, di F/dt =100 A/µs - 10 - nC - 20 - nC Q1 V SD Q2 Reverse recovery charge Q1 Q rr Q2 Rev.2.0 page 4 V 2013-07-30 BSC0911ND 1 Power dissipation (Q1) P tot=f(T A)4) 1.2 1.2 1 1 0.8 0.8 Ptot [W] Ptot [W] P tot=f(T A) 2 Power dissipation (Q2) 4) 0.6 0.6 0.4 0.4 0.2 0.2 0 0 0 40 80 120 0 160 40 TA [°C] 80 120 160 120 160 TA [°C] 3 Drain current (Q1) 4 Drain current (Q2) I D=f(T C) I D=f(T C) parameter: V GS≥10 V parameter: V GS≥10 V 40 40 30 30 ID [A] 50 ID [A] 50 20 20 10 10 0 0 0 40 80 120 160 TC [°C] Rev.2.0 0 40 80 TC [°C] page 5 2013-07-30 BSC0911ND 5 Safe operating area (Q1) 6 Safe operating area (Q2) I D=f(V DS); T C=25 °C; D =0 I D=f(V DS); T C=25 °C; D =0 parameter: t p parameter: t p 103 103 1 µs 1 µs 102 10 µs 102 10 µs 100 µs 100 µs 1 ms 1 ms ID [A] ID [A] 10 ms 10 ms 101 DC 101 DC 100 100 10-1 10-1 10-1 100 101 102 10-1 100 VDS [V] 101 102 VDS [V] 7 Max. transient thermal impedance (Q1) 8 Max. transient thermal impedance (Q2) Z thJC=f(t p) Z thJC=f(t p) parameter: D =t p/T parameter: D =t p/T 101 101 100 0.5 100 ZthJC [K/W] ZthJC [K/W] 0.5 0.2 0.2 0.1 0.05 0.1 10-1 0.05 0.02 0.01 0.02 single pulse 0.01 single pulse 10-1 10-2 10-5 10-4 10-3 10-2 10-1 100 tp [s] Rev.2.0 10-5 10-4 10-3 10-2 10-1 100 tp [s] page 6 2013-07-30 BSC0911ND 9 Typ. output characteristics (Q1) 10 Typ. output characteristics (Q2) I D=f(V DS); T j=25 °C I D=f(V DS); T j=25 °C parameter: V GS parameter: V GS 160 400 4.5 V 10 V 10 V 4V 4V 3.5 V 4.5 V 3.5 V 120 300 3.3 V ID [A] ID [A] 3.3 V 80 200 3V 3V 2.8 V 40 100 2.8 V 0 0 0 1 2 3 0 1 VDS [V] 2 3 VDS [V] 11 Typ. drain-source on resistance (Q1) 12 Typ. drain-source on resistance (Q2) R DS(on)=f(I D); T j=25 °C R DS(on)=f(I D); T j=25 °C parameter: V GS parameter: V GS 10 2 3.3 V 3.5 V 8 1.5 3V 4V 3.3 V RDS(on) [mW] RDS(on) [mW] 4.5 V 6 3.5 V 4V 4 4.5 V 5V 1 10 V 5V 0.5 10 V 2 0 0 0 20 40 60 80 ID [A] Rev.2.0 0 20 40 60 80 ID [A] page 7 2013-07-30 BSC0911ND I D=f(V GS); |V DS |>2 | I D| R DS(on)max I D=f(V GS); |V DS |>2 | I D| R DS(on)max parameter: T j parameter: T j 160 160 120 120 ID [A] 14 Typ. transfer characteristics (Q2) ID [A] 13 Typ. transfer characteristics (Q1) 80 40 80 40 150 °C 150 °C 25 °C 25 °C 0 0 0 1 2 3 4 0 1 2 VGS [V] 3 4 VGS [V] 15 Drain-source on-state resistance (Q1) 16 Drain-source on-state resistance (Q2) R DS(on)=f(T j); I D=20 A; V GS=10 V R DS(on)=f(T j); I D=20 A; V GS=10 V 5 2 4 3 RDS(on) [mW] RDS(on) [mW] 1.5 typ 2 1 typ 0.5 1 0 0 -60 -20 20 60 100 140 180 Tj [°C] Rev.2.0 -60 -20 20 60 100 140 180 Tj [°C] page 8 2013-07-30 BSC0911ND 18 Typ. gate threshold voltage (Q2) V GS(th)=f(T j); V GS=V DS; I D=250 µA V GS(th)=f(T j); V GS=V DS; I D=250 µA 2.8 2.8 2.4 2.4 2 2 1.6 1.6 VGS(th) [V] VGS(th) [V] 17 Typ. gate threshold voltage (Q1) 1.2 1.2 0.8 0.8 0.4 0.4 0 0 -60 -20 20 60 100 140 180 -60 -20 20 60 Tj [°C] 100 140 180 Tj [°C] 19 Typ. capacitances (Q1) 20 Typ. capacitances (Q2) C =f(V DS); V GS=0 V; f =1 MHz C =f(V DS); V GS=0 V; f =1 MHz 104 104 Ciss Ciss Coss 103 103 C [pF] C [pF] Coss Crss 102 102 Crss 101 101 0 5 10 15 20 25 VDS [V] Rev.2.0 0 5 10 15 20 25 VDS [V] page 9 2013-07-30 BSC0911ND 21 Forward characteristics of reverse diode (Q1) 22 Forward characteristics of reverse diode (Q2) I F=f(V SD) I F=f(V SD) parameter: T j parameter: T j 103 103 102 102 25 °C 150 °C 25 °C 150 °C IF [A] 101 IF [A] 101 100 100 10-1 10-1 10-2 10-2 0 0.4 0.8 1.2 0 0.4 VSD [V] 0.8 VSD [V] 23 Avalanche characteristics (Q1) 24 Avalanche characteristics (Q2) I AS=f(t AV); R GS=25 W I AS=f(t AV); R GS=25 W parameter: T j(start) parameter: T j(start) 102 102 25 °C IAV [A] 125 °C IAV [A] 1.2 25 °C 101 100 °C 100 °C 101 125 °C 100 100 100 101 102 103 tAV [µs] Rev.2.0 100 101 102 103 tAV [µs] page 10 2013-07-30 BSC0911ND 25 Typ. gate charge (Q1) 26 Typ. gate charge (Q2) V GS=f(Q gate); I D=20 A pulsed V GS=f(Q gate); I D=20 A pulsed parameter: V DD parameter: V DD 10 10 8 8 12 V 5V 12 V 20 V 6 5V 20 V VGS [V] VGS [V] 6 4 4 2 2 0 0 0 4 8 12 16 20 0 10 20 Qgate [nC] 30 40 50 Qgate [nC] 28 Drain-source breakdown voltage (Q2) V BR(DSS)=f(T j); I D=1 mA V BR(DSS)=f(T j); I D=1 mA 28 28 27 27 26 26 25 25 VBR(DSS) [V] VBR(DSS) [V] 27 Drain-source breakdown voltage (Q1) 24 24 23 23 22 22 21 21 20 20 -60 -20 20 60 100 140 180 Tj [°C] Rev.2.0 60 -60 -20 20 60 100 140 180 Tj [°C] page 11 2013-07-30 BSC0911ND Package Outline PG-TISON Rev.2.0 page 12 2013-07-30 BSC0911ND Boardpads & Apertures PG-TISON Rev.2.0 page 13 2013-07-30 BSC0911ND Published by Infineon Technologies AG 81726 Munich, Germany © 2012 Infineon Technologies AG All Rights Reserved. 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Infineon Technologies components may be used in life-support devices or systems only with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. Rev.2.0 page 14 2013-07-30