BSL215C
OptiMOS™2 + OptiMOS™-P 2 Small Signal Transistor
Product Summary
Features
P
N
-20
20
V
VGS=±4.5 V
150
140
mW
VGS=±2.5 V
280
250
-1.5
1.5
· Complementary P + N channel
VDS
· Enhancement mode
RDS(on),max
· Super Logic level (2.5V rated)
· Avalanche rated
ID
A
· Qualified according to AEC Q101
· 100% lead-free; RoHS compliant
PG-TSOP6
· Halogen free according to IEC61249-2-21
6
5
4
1
2
3
Type
Package
Tape and Reel Information
Marking
Lead Free
Packing
BSL215C
PG-TSOP-6
H6327: 3000 pcs / reel
sPH
Yes
Non dry
Maximum ratings, at T j=25 °C, unless otherwise specified 1)
Parameter
Continuous drain current
Value
Symbol Conditions
ID
Unit
P
N
T A=25 °C
-1.5
1.5
T A=70 °C
-1.2
1.2
Pulsed drain current
I D,pulse
T A=25 °C
-6
6
Avalanche energy, single pulse
E AS
P: I D=-1.5 A,
N: I D=1.5 A,
R GS=25 W
11
3.7
Gate source voltage
V GS
Power dissipation
P tot
Operating and storage temperature
T j, T stg
ESD class
Soldering temperature
T A=25 °C
JESD22-A114-HBM
T solder
mJ
±12
V
0.5
W
-55 ... 150
°C
0 (2|I D|R DS(on)max,
I D=-1.2 A
-
4.5
-
N
|V DS|>2|I D|R DS(on)max,
I D=1.2 A
-
4
-
P
µA
N
Drain-source on-state
resistance
Transconductance
S
2)
Performed on 40mm2 FR4 PCB. The traces are 1mm wide, 70μm thick and 20mm long; they are present on both
sides of the PCB
Rev.2.2
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2013-11-06
BSL215C
Parameter
Values
Symbol Conditions
Unit
min.
typ.
max.
-
270
346
-
110
143
-
110
128
-
46
62
P Crss
-
94
128
N
-
6.1
9
P t d(on)
-
6.7
-
4.1
-
-
9.7
-
-
7.6
-
-
14.5
-
-
6.8
-
P tf
-
14.0
-
N
-
1.4
-
P Q gs
-
-0.49
-
-
-1.9
-
-
-3.0
-
-
-1.9
-
-
0.24
-
-
0.2
-
-
0.73
-
-
2.2
-
Dynamic characteristics
Input capacitance
P C iss
N
Output capacitance
P C oss
N
Reverse transfer capacitance
Turn-on delay time
V GS=0 V,
P: V DS=-10 V,
N: V DS= 10 V,
f =1 MHz
N
Rise time
P tr
N
Turn-off delay time
P t d(off)
N
Fall time
P: V DD=-10 V,
V GS=-4.5V, R G=6 W,
I D=-1.5 A
N: V DD=10 V,
V GS=4.5 V, R G=6 W,
I D=1.5 A
pF
ns
Gate Charge Characteristics
Gate to source charge
Gate to drain charge
Q gd
Switching charge
Qg
Gate plateau voltage
V plateau
Gate to source charge
N Q gs
Gate to drain charge
Q gd
Switching charge
Qg
Gate plateau voltage
V plateau
Rev.2.2
V DD=-10 V,
I D=-1.5 A,
V GS=0 to -5 V
V DD=10 V,
I D=1.5 A,
V GS=0 to 4.5 V
page 3
nC
2013-11-06
BSL215C
Parameter
Values
Symbol Conditions
Unit
min.
typ.
max.
-
-
-0.5
-
-
0.5
P I S,pulse
-
-
-6
N
-
-
6
Reverse Diode
Diode continuous forward current
P IS
N
A
T C=25 °C
Diode pulse current
Diode forward voltage
Reverse recovery time
P V SD
V GS=0 V, I F=-1.5 A,
T j=25 °C
-
-0.8
-1.1
N
V GS=0 V, I F=1.5 A,
T j=25 °C
-
0.8
1.1
-
21
-
-
8.4
-
-
-3.7
-
-
1.7
-
P t rr
N
Reverse recovery charge
P Q rr
V R=±10 V, I F=I S,
di F/dt =100 A/µs
N
Rev.2.2
page 4
V
ns
nC
2013-11-06
BSL215C
2 Power dissipation (N)
P tot=f(T A)
P tot=f(T A)
0.6
0.6
0.5
0.5
0.4
0.4
Ptot [W]
Ptot [W]
1 Power dissipation (P)
0.3
0.3
0.2
0.2
0.1
0.1
0
0
0
40
80
120
0
160
40
TA [°C]
4 Drain current (N)
I D=f(T A)
I D=f(T A)
parameter: V GS≤-4.5 V
parameter: V GS≥4.5 V
1.6
1.6
1.4
1.4
1.2
1.2
1
1
ID [A]
-ID [A]
120
160
120
160
TA [°C]
3 Drain current (P)
0.8
0.8
0.6
0.6
0.4
0.4
0.2
0.2
0
0
0
40
80
120
160
TA [°C]
Rev.2.2
80
0
40
80
TA [°C]
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BSL215C
5 Safe operating area (P)
6 Safe operating area (N)
I D=f(V DS); T A=25 °C; D =0
I D=f(V DS); T A=25 °C; D =0
parameter: t p
parameter: t p
101
101
1 µs
1 µs
10 µs
10 µs
100 µs
100 µs
100
100
1 ms
ID [A]
-ID [A]
1 ms
10 ms
10-1
10 ms
10-1
DC
DC
10-2
10-2
10-1
100
101
102
10-1
100
-VDS [V]
101
VDS [V]
7 Max. transient thermal impedance (P)
8 Max. transient thermal impedance (N)
Z thJA=f(t p)
Z thJA=f(t p)
parameter: D =t p/T
parameter: D =t p/T
103
103
0.5
0.5
ZthJA [K/W]
102
ZthJA [K/W]
102
0.2
0.1
0.05
101
0.2
0.1
0.05
101
0.02
0.01
0.02
0.01
single pulse
single pulse
100
100
10-5
10-4
10-3
10-2
10-1
100
101
102
tp [s]
Rev.2.2
102
10-5
10-4
10-3
10-2
10-1
100
101
102
tp [s]
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BSL215C
9 Typ. output characteristics (P)
10 Typ. output characteristics (N)
I D=f(V DS); T j=25 °C
I D=f(V DS); T j=25 °C
parameter: V GS
parameter: V GS
8
8
4.5 V
10 V
4.5 V
3.3 V
7
7
3.5 V
10 V
3V
6
6
3V
2.5 V
5
4
ID [A]
ID [A]
5
2.3 V
3
4
3
2
2V
2
1
1.8 V
1
2.5 V
2.3 V
2V
1.8 V
0
0
0
1
2
3
0
1
VDS [V]
2
3
VDS [V]
11 Typ. drain-source on resistance (P)
12 Typ. drain-source on resistance (N)
R DS(on)=f(I D); T j=25 °C
R DS(on)=f(I D); T j=25 °C
parameter: V GS
parameter: V GS
280
280
2V
2.2 V
2.5 V
240
3V
240
200
200
2.5 V
160
RDS(on) [mW]
RDS(on) [mW]
2.5 V
3V
3.3 V
120
4.5 V
160
3.5 V
120
4.5 V
6V
6V
80
80
40
40
0
0
0
2
4
6
8
ID [A]
Rev.2.2
0
2
4
6
8
ID [A]
page 7
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BSL215C
14 Typ. transfer characteristics (N)
I D=f(V GS); |V DS |>2 | ID| RDS(on)max
I D=f(V GS); |V DS |>2 | I D | R DS(on)max
parameter: T j
parameter: T j
6
6
5
5
4
4
ID [A]
-ID [A]
13 Typ. transfer characteristics (P)
3
3
150 °C
2
2
150 °C
1
1
25 °C
25 °C
0
0
0
1
2
0
3
1
-VGS [V]
2
3
VGS [V]
15 Drain-source on-state resistance (P)
16 Drain-source on-state resistance (N)
R DS(on)=f(T j); I D=-1.5 A; V GS=-4.5 V
R DS(on)=f(T j); I D=1.5 A; V GS=4.5 V
240
240
200
200
98%
160
RDS(on) [mW]
RDS(on) [mW]
160
typ
120
typ
120
80
80
40
40
0
0
-60
-20
20
60
100
140
180
Tj [°C]
Rev.2.2
98%
-60
-20
20
60
100
140
180
Tj [°C]
page 8
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BSL215C
17 Typ. gate threshold voltage (P)
18 Typ. gate threshold voltage (N)
V GS(th)=f(T j); V GS=V DS; I D=-11 µA
V GS(th)=f(T j); V GS=V DS; I D=3.7 µA
1.6
1.6
1.2
1.2
98%
VGS(th) [V]
-VGS(th) [V]
98%
typ
0.8
typ
0.8
2%
2%
0.4
0.4
0
0
-60
-20
20
60
100
140
180
-60
-20
20
Tj [°C]
60
100
140
180
Tj [°C]
19 Typ. capacitances (P)
20 Typ. capacitances (N)
C =f(V DS); V GS=0 V; f =1 MHz
C =f(V DS); V GS=0 V; f =1 MHz
103
103
Ciss
Ciss
102
C [pF]
C [pF]
Coss
Coss
102
Crss
101
Crss
101
100
0
10
20
-VDS [V]
Rev.2.2
0
5
10
15
20
VDS [V]
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BSL215C
21 Forward characteristics of reverse diode (P)
22 Forward characteristics of reverse diode (N)
I F=f(V SD)
I F=f(V SD)
parameter: T j
parameter: T j
101
101
25 °C
100
100
150 °C
25 °C
IF [A]
-IF [A]
150 °C
10-1
10-1
150 °C, 98%
98%, 150°C
98%, 25 °C
25 °C, 98%
10-2
10-2
0
0.5
1
1.5
2
0
0.4
0.8
-VSD [V]
1.2
VSD [V]
23 Avalanche characteristics (P)
24 Avalanche characteristics (N)
I AS=f(t AV); R GS=25 W
I AS=f(t AV); R GS=25 W
parameter: T j(start)
parameter: T j(start)
101
25 °C
IAV [A]
-IAV [A]
101
100
100 °C
125 °C
25 °C
100
100 °C
125 °C
10-1
10-1
100
101
102
103
tAV [µs]
Rev.2.2
1.6
100
101
102
103
tAV [µs]
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BSL215C
25 Typ. gate charge (P)
26 Typ. gate charge (N)
V GS=f(Q gate); I D=-1.5 A pulsed
V GS=f(Q gate); I D=1.5 A pulsed
parameter: V DD
parameter: V DD
6
6
-16 V
-4 V
5
5
-10 V
10 V
4V
4
VGS [V]
-VGS [V]
4
16 V
3
3
2
2
1
1
0
0
0
1
2
3
4
5
0
0.2
0.4
-Qgate [nC]
0.6
0.8
Qgate [nC]
28 Drain-source breakdown voltage (N)
V BR(DSS)=f(T j); I D=-250 µA
V BR(DSS)=f(T j); I D=250 µA
25
25
24
24
23
23
22
22
VBR(DSS) [V]
-VBR(DSS) [V]
27 Drain-source breakdown voltage (P)
21
20
21
20
19
19
18
18
17
17
16
16
-60
-20
20
60
100
140
180
Tj [°C]
Rev.2.2
1
-60
-20
20
60
100
140
180
Tj [°C]
page 11
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BSL215C
BSL215C
Package Outline:
Footprint:
TSOP6
Packaging:
Dimensions in mm
Rev.2.2
page 12
2013-11-06
BSL215C
Published by
Infineon Technologies AG
81726 Munich, Germany
© 2008 Infineon Technologies AG
All Rights Reserved.
Legal Disclaimer
The information given in this document shall in no event be regarded as a guarantee of
conditions or characteristics. With respect to any examples or hints given herein, any typical
values stated herein and/or any information regarding the application of the device,
Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind,
including without limitation, warranties of non-infringement of intellectual property rights
of any third party.
Information
For further information on technology, delivery terms and conditions and prices, please
contact the nearest Infineon Technologies Office (www.infineon.com).
Warnings
Due to technical requirements, components may contain dangerous substances. For information
on the types in question, please contact the nearest Infineon Technologies Office.
Infineon Technologies components may be used in life-support devices or systems only with
the express written approval of Infineon Technologies, if a failure of such components can
reasonably be expected to cause the failure of that life-support device or system or to affect
the safety or effectiveness of that device or system. Life support devices or systems are
intended to be implanted in the human body or to support and/or maintain and sustain
and/or protect human life. If they fail, it is reasonable to assume that the health of the user
or other persons may be endangered.
Rev.2.2
page 13
2013-11-06