BSL308CL6327HTSA1

BSL308C OptiMOS™ P3 + Optimos™ 2 Small Signal Transistor Product Summary Features · Complementary P + N channel · Enhancement mode VDS · Logic level (4.5V rated) RDS(on),max · Avalanche rated P N -30 30 V VGS=±10 V 80 57 mW VGS=±4.5 V 130 93 -2.0 2.3 ID · Qualified according to AEC Q101 · 100% Lead-free; RoHS compliant A PG-TSOP-6 · Halogen free according to IEC61249-2-21 6 1 3 2 5 4 3 Type Package Tape and Reel Information Marking Lead Free Packing BSL308C PG-TSOP6 H6327: 3000 pcs / reel sPS Yes Non dry Maximum ratings, at T j=25 °C, unless otherwise specified 1) Parameter Continuous drain current Value Symbol Conditions ID Unit P N T A=25 °C -2.0 2.3 T A=70 °C -1.6 1.8 Pulsed drain current I D,pulse T A=25 °C -8.0 9 Avalanche energy, single pulse E AS P: I D=-2.0 A, N: I D=2.3 A, R GS=25 W 10.7 10.8 Gate source voltage V GS Power dissipation 2) P tot Operating and storage temperature T j, T stg ESD class Soldering temperature T A=25 °C JESD22-A114-HBM T solder mJ ±20 V 0.5 W -55 ... 150 °C class 0 (2|I D|R DS(on)max, I D=-1.6 A - 4.6 - N |V DS|>2|I D|R DS(on)max, I D=1.8 A - 5 - P I GSS µA N Drain-source on-state resistance Transconductance S 2) Performed on 40mm2 FR4 PCB. The traces are 1mm wide, 70μm thick and 20mm long; they are present on both sides of the PCB Rev.2.1 page 2 2013-11-07 BSL308C Parameter Values Symbol Conditions Unit min. typ. max. - 376 500 - 207 275 - 196 261 - 75 100 P Crss - 12 18 N - 12 17 P t d(on) - 5.6 - - 4.4 - - 7.7 - - 2.3 - - 15.3 - - 8.3 - P tf - 2.8 - N - 1.4 - P Q gs - -1.2 - - -0.6 - - -5.0 - - -3.1 - - 0.65 - - 0.45 - 1.5 - 3.1 - Dynamic characteristics Input capacitance P C iss N Output capacitance P C oss N Reverse transfer capacitance Turn-on delay time V GS=0 V, P: V DS=-15 V, N: V DS= 15 V, f =1 MHz N Rise time P tr N Turn-off delay time P t d(off) N Fall time P: V DD=-15 V, V GS=-10 V, R G=6 W, I D=-2 A N: V DD=15 V, V GS=10 V, R G=6 W, I D=2.3 A pF ns Gate Charge Characteristics Gate to source charge Gate to drain charge Q gd Switching charge Qg Gate plateau voltage V plateau Gate to source charge N Q gs Gate to drain charge Q gd Switching charge Qg Gate plateau voltage V plateau Rev.2.1 V DD=-15 V, I D=-2 A, V GS=0 to -10 V V DD=15 V, I D=2.3 A, V GS=0 to 10 V page 3 nC 2013-11-07 BSL308C Parameter Values Symbol Conditions Unit min. typ. max. - - -0.4 - - 0.5 P I S,pulse - - -8.4 N - - 9 Reverse Diode Diode continuous forward current P IS N A T C=25 °C Diode pulse current Diode forward voltage Reverse recovery time P V SD V GS=0 V, I F=-2 A, T j=25 °C - -0.8 -1.1 N V GS=0 V, I F=2.3 A, T j=25 °C - 0.83 1.1 V R=-15 V, I F=-2A, di F/dt =-100 A/µs - 14 - ns - -5.9 - nC V R=15 V, I F=2.3A di F/dt =100 A/µs - 14.4 - ns - 2.9 - nC P t rr Q rr Reverse recovery charge N t rr Q rr Rev.2.1 page 4 V 2013-11-07 BSL308C 2 Power dissipation (N) P tot=f(T A) P tot=f(T A) 0.6 0.6 0.5 0.5 0.4 0.4 Ptot [W] Ptot [W] 1 Power dissipation (P) 0.3 0.3 0.2 0.2 0.1 0.1 0 0 0 40 80 120 0 160 40 TA [°C] 4 Drain current (N) I D=f(T A) I D=f(T A) parameter: V GS≤-10 V parameter: V GS≥10 V 2.4 2.4 2.2 2.2 2 2 1.8 1.8 1.6 1.6 1.4 1.4 ID [A] -ID [A] 120 160 120 160 TA [°C] 3 Drain current (P) 1.2 1.2 1 1 0.8 0.8 0.6 0.6 0.4 0.4 0.2 0.2 0 0 0 40 80 120 160 TA [°C] Rev.2.1 80 0 40 80 TA [°C] page 5 2013-11-07 BSL308C 5 Safe operating area (P) 6 Safe operating area (N) I D=f(V DS); T A=25 °C; D =0 I D=f(V DS); T A=25 °C; D =0 parameter: t p parameter: t p 101 101 1 µs 100 µs 10 µs 100 µs 10 ms 1 ms 100 10 µs 1 µs 1 ms 100 10 ms DC 10-1 10-1 ID [A] ID [A] DC 10-2 10-2 10-3 10-3 10-4 10-4 10-1 100 101 10-1 102 100 101 102 VDS [V] VDS [V] 7 Max. transient thermal impedance (P) 8 Max. transient thermal impedance (N) Z thJA=f(t p) Z thJA=f(t p) parameter: D =t p/T parameter: D =t p/T 103 103 0.5 0.5 ZthJA [K/W] 102 ZthJA [K/W] 102 0.2 0.1 0.1 0.05 0.02 0.05 101 0.2 101 0.01 0.02 single pulse 0.01 single pulse 100 100 10-5 10-4 10-3 10-2 10-1 100 101 102 tp [s] Rev.2.1 10-4 10-3 10-2 10-1 100 101 102 tp [s] page 6 2013-11-07 BSL308C 9 Typ. output characteristics (P) 10 Typ. output characteristics (N) I D=f(V DS); T j=25 °C I D=f(V DS); T j=25 °C parameter: V GS parameter: V GS 6 6 -10 V 4.5 V -4.5 V 5 5 10 V 4V 3.5 V -4 V -3.5 V 4 4 ID [A] -ID [A] -3.3 V 3 2 3.3 V 3 2 -3 V 3V 1 1 2.8 V -2.8 V 0 0 0 1 2 3 0 1 2 -VDS [V] 3 VDS [V] 11 Typ. drain-source on resistance (P) 12 Typ. drain-source on resistance (N) R DS(on)=f(I D); T j=25 °C R DS(on)=f(I D); T j=25 °C parameter: V GS parameter: V GS 200 200 3.5 V 3V 3.3 V 175 175 3.3 V 150 150 3.5 V 125 RDS(on) [mW] RDS(on) [mW] 125 4V 100 4.5 V 5V 75 100 4V 75 4.5 V 5V 10 V 50 50 10 V 25 25 0 0 0 1 2 3 4 5 6 7 8 ID [A] Rev.2.1 0 1 2 3 4 5 6 7 8 ID [A] page 7 2013-11-07 BSL308C 13 Typ. transfer characteristics (P) 14 Typ. transfer characteristics (N) I D=f(V GS); |V DS |>2 | ID| RDS(on)max I D=f(V GS); |V DS |>2 | I D | R DS(on)max parameter: T j parameter: T j 5 5 4 4 3 3 -ID [A] ID [A] 25 °C 2 2 150 °C 150 °C 25 °C 1 1 0 0 0 1 2 3 4 0 5 1 2 -VGS [V] 3 4 5 VGS [V] 15 Drain-source on-state resistance (P) 16 Drain-source on-state resistance (N) R DS(on)=f(T j); I D=-2.0 A; V GS=-10 V R DS(on)=f(T j); I D=2.3 A; V GS=10 V 120 120 RDS(on) [mW] RDS(on) [mW] 98% 80 2% 80 98% 2% 40 40 0 0 -60 -20 20 60 100 140 180 Tj [°C] Rev.2.1 -60 -20 20 60 100 140 180 Tj [°C] page 8 2013-11-07 BSL308C 17 Typ. gate threshold voltage (P) 18 Typ. gate threshold voltage (N) V GS(th)=f(T j); V GS=V DS; I D=-11 µA V GS(th)=f(T j); V GS=V DS; I D=11 µA 2.8 2.8 2.4 2.4 max 2 max 1.6 VGS(th) [V] -VGS(th) [V] 2 typ 1.2 1.6 typ 1.2 min min 0.8 0.8 0.4 0.4 0 0 -60 -20 20 60 100 140 180 -60 -20 20 Tj [°C] 60 100 140 180 Tj [°C] 19 Typ. capacitances (P) 20 Typ. capacitances (N) C =f(V DS); V GS=0 V; f =1 MHz C =f(V DS); V GS=0 V; f =1 MHz 103 103 Ciss Ciss Coss 102 102 C [pF] C [pF] Coss 101 101 Crss Crss 100 0 10 20 30 -VDS [V] Rev.2.1 0 10 20 30 VDS [V] page 9 2013-11-07 BSL308C 21 Forward characteristics of reverse diode (P) 22 Forward characteristics of reverse diode (N) I F=f(V SD) I F=f(V SD) parameter: T j parameter: T j 101 101 25 °C 100 100 150 °C, 98% 150 °C 150 °C IF [A] -IF [A] 25 °C 150°C, 98% 10-1 10-1 25 °C, 98% 25 °C, 98% 10-2 10-2 0 0.5 1 1.5 0 0.5 -VSD [V] 1 VSD [V] 23 Avalanche characteristics (P) 24 Avalanche characteristics (N) I AS=f(t AV); R GS=25 W I AS=f(t AV); R GS=25 W parameter: T j(start) parameter: T j(start) 101 101 25 °C IAV [A] -IAV [A] 25 °C 100 °C 100 125 °C 10-1 100 °C 100 125 °C 10-1 100 101 102 103 tAV [µs] Rev.2.1 1.5 100 101 102 103 tAV [µs] page 10 2013-11-07 BSL308C 25 Typ. gate charge (P) 26 Typ. gate charge (N) V GS=f(Q gate); I D=-2.0 A pulsed V GS=f(Q gate); I D=2.3 A pulsed parameter: V DD parameter: V DD 10 10 8 8 -24 V 15 V 6 6 6V VGS [V] -VGS [V] -15 V -6 V 24 V 4 4 2 2 0 0 0 1 2 3 4 5 6 0 1 2 -Qgate [nC] 3 4 28 Drain-source breakdown voltage (N) V BR(DSS)=f(T j); I D=-250 µA V BR(DSS)=f(T j); I D=250 µA 36 36 34 34 32 32 VBR(DSS) [V] -VBR(DSS) [V] 6 140 180 Qgate [nC] 27 Drain-source breakdown voltage (P) 30 30 28 28 26 26 24 24 -60 -20 20 60 100 140 180 Tj [°C] Rev.2.1 5 -60 -20 20 60 100 Tj [°C] page 11 2013-11-07 BSL308C TSOP-6 Package Outline: Footprint: Packaging: Dimensions in mm Rev.2.1 page 12 2013-11-07 BSL308C Published by Infineon Technologies AG 81726 Munich, Germany © 2009 Infineon Technologies AG All Rights Reserved. Legal Disclaimer The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics. With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation, warranties of non-infringement of intellectual property rights of any third party. Information For further information on technology, delivery terms and conditions and prices, please contact the nearest Infineon Technologies Office (www.infineon.com). Warnings Due to technical requirements, components may contain dangerous substances. For information on the types in question, please contact the nearest Infineon Technologies Office. Infineon Technologies components may be used in life-support devices or systems only with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. Rev.2.1 page 13 2013-11-07