Mosfet
MetalOxideSemiconductorFieldEffectTransistor
OptiMOS™Power-Transistor,-30V
BSL305SPE
DataSheet
Rev.2.0
Final
Industrial&Multimarket
BSL305SPE
OptiMOS™-P 3 Small-Signal-Transistor
Features
Product Summary
-30
V
VGS=-10 V
45
m
VGS=-4.5 V
80
VDS
• P-channel
RDS(on),max
• Enhancement mode
• Logic level (4.5V rated)
-5.3
ID
A
• ESD protected
• Avalanche rated
PG-TSOP-6
• Qualified according to AEC Q101
6
5
• 100% Lead-free; RoHS compliant, Halogen-free
1
Type
Package
Tape and Reel Information
BSL305SPE
PG-TSOP-6 H6327: 3000 pcs/ reel
Marking
sPU
2
Halogen Free
Yes
4
3
Packing
Non dry
Maximum ratings, at T j=25 °C, unless otherwise specified
Parameter
Symbol Conditions
Continuous drain current
ID
Value
T A=25 °C
-5.3
T A=70 °C
-4.2
-21.2
Unit
A
Pulsed drain current
I D,pulse
T A=25 °C
Avalanche energy, single pulse
E AS
I D=-5.3A, R GS=25
20
mJ
Reverse diode dv /dt
dv /dt
I D=-5.3 A, V DS=-15 V,
di /dt =100A/µs,
T j,max=150 °C
6
kV/µs
Gate source voltage
V GS
Power dissipation
P tot
Operating and storage temperature
T j, T stg
ESD Class
T A=25 °C
JESD22-A114 -HBM
Soldering Temperature
IEC climatic category; DIN IEC 68-1
Rev 2.0
page 1
±20
V
2.0
W
-55 ... 150
°C
1C (1KV to 2kV)
V
260 °C
°C
55/150/56
°C
2014-11-18
BSL305SPE
Parameter
Values
Symbol Conditions
Unit
min.
typ.
max.
-
-
50
minimal footprint
-
-
230
6 cm2 cooling area1)
-
-
62.5
-30
-
-
Thermal characteristics
Thermal resistance,
junction - minimal footprint
R thJS
SMD version, device on PCB
R thJA
K/W
Electrical characteristics, at T j=25 °C, unless otherwise specified
Static characteristics
Drain-source breakdown voltage
V (BR)DSS V GS= 0V, I D=-250µA
Gate threshold voltage
V GS(th)
V DS=0V, I D=-20µA
-2
-1.50
-1
Drain-source leakage current
I DSS
V DS=-30V, V GS=0 V,
T j=25 °C
-
-
-0.1
V DS=-30V, V GS=0V,
T j=150 °C
-
-
-20
V
A
Gate-source leakage current
I GSS
V GS=-20V, V DS=0V
-
-
-5
μA
Drain-source on-state resistance
R DS(on)
V GS=-4.5 V, I D=-4.3 A
-
49
80
m
V GS=-10 V, I D=-5.3 A
-
34
45
10.0
-
Transconductance
g fs
|V DS|>2|I D|R DS(on)max,
I D=-4.2 A
S
1)
Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm 2 (single layer, 70 µm thick) copper area for drain
connection. PCB is vertical in still air. (t < 5 sec.)
Rev 2.0
page 2
2014-11-18
BSL305SPE
Parameter
Values
Symbol Conditions
Unit
min.
typ.
max.
-
706
939
-
338
449
Dynamic characteristics2)
Input capacitance
C iss
Output capacitance
C oss
Reverse transfer capacitance
Crss
-
22
34
Turn-on delay time
t d(on)
-
6.4
9.6
Rise time
tr
-
8.0
12.0
Turn-off delay time
t d(off)
-
20.5
30.8
Fall time
tf
-
5.1
7.7
Gate to source charge
Q gs
-
2.3
3.0
Gate to drain charge
Q gd
-
1.1
1.6
Gate charge total
Qg
-
9.4
14.0
Gate plateau voltage
V plateau
-
3.2
-
V
-
-
-5.3
A
-
-
-21.2
-
-0.9
-1.1
V
-
23
-
ns
-
17
-
nC
V GS=0 V, V DS=-15 V,
f =1 MHz
V DD=-15V,
V GS=-10 V,
I D=-5.3 A, R G,ext=6
pF
ns
Gate Charge Characteristics2)
V DD=-15 V, I D=-5.3 A,
V GS=0 to -10 V
nC
Reverse Diode
Diode continous forward current
IS
Diode pulse current
I S,pulse
Diode forward voltage
V SD
Reverse recovery time2)
t rr
Reverse recovery charge2)
Q rr
2)
T A=25 °C
V GS=0 V, I F=-5.3 A,
T j=25 °C
V R=-15 V, I F=-5.3 A,
di F/dt =100 A/µs
Defined by design.Not subjected to production test
Rev 2.0
page 3
2014-11-18
BSL305SPE
1 Power dissipation
2 Drain current
P tot=f(T A)
I D=f(T A); V GS≥-10 V
6
2
5
1.6
Ptot [W]
4
ID [A]
1.2
3
0.8
2
0.4
1
0
0
0
40
80
120
0
20
40
TA [°C]
60
80
100
120
140
TA [°C]
3 Safe operating area
4 Max. transient thermal impedance
I D=f(V DS); T A=25 °C; D =0
Z thJA=f(t p)
parameter: t p
parameter: D =t p/T
102
10 µs
101
0.5
102
100 µs
1 ms
0.2
ZthJA [K/W]
100
ID [A]
10 ms
10-1
DC
0.1
101
0.05
0.02
0.01
single pulse
100
10-2
10-3
10-1
10-2
10-1
100
101
102
VDS [V]
Rev 2.0
10-5
10-4
10-3
10-2
10-1
100
101
tp [s]
page 4
2014-11-18
BSL305SPE
5 Typ. output characteristics
6 Typ. drain-source on resistance
I D=f(V DS); T j=25 °C
R DS(on)=f(I D); T j=25 °C
parameter: V GS
parameter: V GS
10
160
4.5 V
4V
8
140
3.5 V
10 V
120
RDS(on) [m]
6
ID [A]
3.3 V
4
3V
3.3 V
100
80
3.5 V
4V
60
4.5
3.5VV
3V
40
2
10 V
2.8 V
20
0
0
0
1
2
3
0
2
4
VDS [V]
6
8
10
ID [A]
7 Typ. transfer characteristics
8 Typ. forward transconductance
I D=f(V GS); |V DS|>2|I D|R DS(on)max
g fs=f(I D); T j=25 °C
15
4
150 °C
25 °C
3
gfs [S]
ID [A]
10
2
5
1
0
0
0
1
2
3
4
VGS [V]
Rev 2.0
0
2
4
6
8
ID [A]
page 5
2014-11-18
BSL305SPE
9 Drain-source on-state resistance
10 Typ. gate threshold voltage
R DS(on)=f(T j); I D=-5.3 A; V GS=-10 V
V GS(th)=f(T j); V DS=VGS; I D=-20 µA
parameter: I D
2.4
80
2
98 %
1.6
VGS(th) [V]
RDS(on) [m]
60
98 %
40
typ
1.2
2%
typ
0.8
20
0.4
0
0
-60
-20
20
60
100
140
-60
-20
20
Tj [°C]
60
100
140
Tj [°C]
11 Typ. capacitances
12 Forward characteristics of reverse diode
C =f(V DS); V GS=0 V; f =1 MHz; Tj=25°C
I F=f(V SD)
parameter: T j
103
102
Ciss
Coss
101
IF [A]
C [pF]
100
102
25 °C
10-1
150 °C, 98%
Crss
150 °C
25 °C, 98%
10-2
101
10-3
0
5
10
15
20
VDS [V]
Rev 2.0
0
0.4
0.8
1.2
1.6
VSD [V]
page 6
2014-11-18
BSL305SPE
13 Avalanche characteristics
14 Typ. gate charge
I AS=f(t AV); R GS=25
V GS=f(Q gate); I D=-5.3 A pulsed
parameter: T j(start)
parameter: V DD
101
10
9
8
25 °C
7
VGS [V]
IAV [A]
6
100 °C
100
15 V
5
6V
24 V
4
3
125 °C
2
1
10-1
0
100
101
102
0
103
1
2
tAV [µs]
3
4
5
6
7
8
9
10
Qgate [nC]
15 Drain-source breakdown voltage
16 Gate charge waveforms
V BR(DSS)=f(T j); I D=250 µA
32
V GS
Qg
VBR(DSS) [V]
31
30
V g s(th)
29
Q g (th)
Q sw
Q gs
28
-60
-20
20
60
100
Q gate
Q gd
140
Tj [°C]
Rev 2.0
page 7
2014-11-18
BSL305SPE
Package Outline:
TSOP-6
2.9 ±0.2
(2.25)
1.1 MAX.
B
0.1 MAX.
1
2
3
0.35 +0.1
-0.05
0.2
M
B 6x
A
0.15 +0.1
-0.06
0.95
0.2
1.9
1.6 ±0.1
4
10˚ MAX.
5
2.5 ±0.1
6
0.25 ±0.1 10˚ MAX.
(0.35)
M
A
GPX09300
Footprint:
Packaging:
0.5
0.2
2.7
8
2.9
1.9
4
0.95
Remark: Wave soldering possible dep.
on customers process conditions
Pin 1
marking
HLG09283
3.15
1.15
CPWG5899
Dimensions in mm
Note: For symmetric types there is no defined Pin 1 orientation in the reel.
Rev 2.0
page 8
2014-11-18
BSL305SPE
RevisionHistory
BSL305SPE
Revision:2014-12-10,Rev.2.0
Previous Revision
Revision
Date
Subjects (major changes since last revision)
2.0
2014-12-10
Release of final version
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Publishedby
InfineonTechnologiesAG
81726München,Germany
©2014InfineonTechnologiesAG
AllRightsReserved.
LegalDisclaimer
Theinformationgiveninthisdocumentshallinnoeventberegardedasaguaranteeofconditionsorcharacteristics.With
respecttoanyexamplesorhintsgivenherein,anytypicalvaluesstatedhereinand/oranyinformationregardingtheapplication
ofthedevice,InfineonTechnologiesherebydisclaimsanyandallwarrantiesandliabilitiesofanykind,includingwithout
limitation,warrantiesofnon-infringementofintellectualpropertyrightsofanythirdparty.
Information
Forfurtherinformationontechnology,deliverytermsandconditionsandpricespleasecontactyournearestInfineon
TechnologiesOffice(www.infineon.com).
Warnings
Duetotechnicalrequirements,componentsmaycontaindangeroussubstances.Forinformationonthetypesinquestion,
pleasecontactthenearestInfineonTechnologiesOffice.
TheInfineonTechnologiescomponentdescribedinthisDataSheetmaybeusedinlife-supportdevicesorsystemsand/or
automotive,aviationandaerospaceapplicationsorsystemsonlywiththeexpresswrittenapprovalofInfineonTechnologies,ifa
failureofsuchcomponentscanreasonablybeexpectedtocausethefailureofthatlife-support,automotive,aviationand
aerospacedeviceorsystemortoaffectthesafetyoreffectivenessofthatdeviceorsystem.Lifesupportdevicesorsystemsare
intendedtobeimplantedinthehumanbodyortosupportand/ormaintainandsustainand/orprotecthumanlife.Iftheyfail,itis
reasonabletoassumethatthehealthoftheuserorotherpersonsmaybeendangered.
10
Rev.2.0,2014-12-10