BSL716SNH6327XTSA1

MOSFET MetalOxideSemiconductorFieldEffectTransistor OptiMOS™Small-Signal-Transistor,75V BSL716SN DataSheet Rev.2.0 Final Industrial&Multimarket BSL716SN OptiMOS™ Small-Signal-Transistor Product Summary Features 75 V VGS=10 V 0.15 Ω VGS=4.5 V 0.18 VDS • N-channel RDS(on),max • Enhancement mode • Logic Level (4.5V rated) 2.5 ID • Avalanche rated A • Qualified according to AEC Q101 TSOP6 • RoHS compliant 6 • Halogen-free according to IEC61249-2-21 5 4 1 2 3 Type Package Tape and Reel Info Marking Halogen Free Packing BSL716SN TSOP6 H6327: 3000 pcs/ reel sPZ Yes Non dry Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Symbol Conditions Continuous drain current ID Value T A=25 °C 2.5 T A=70 °C 2.0 10.0 Unit A Pulsed drain current I D,pulse T A=25 °C Avalanche energy, single pulse E AS I D=2.5 A, R GS=25 Ω 33 mJ Reverse diode dv /dt dv /dt I D=2.5 A, V DS=50 V, di /dt =200 A/µs, T j,max=150 °C 6 kV/µs Gate source voltage V GS Power dissipation1) P tot Operating and storage temperature T j, T stg ESD Class T A=25 °C JESD22-A114 -HBM Soldering Temperature V 2.0 W -55 ... 150 °C 0 (2|I D|R DS(on)max, I D=2 A S 1) Device on 40mm x 40mm x 1.5mm epoxy PCB FR4 with 6cm² (one layer, 70µm thick) copper area for drain connection. PCB is vertical in still air. ( t < 5 sec) Rev 2.0 page 2 2014-09-30 BSL716SN Parameter Values Symbol Conditions Unit min. typ. max. - 237 315 - 41 55 Dynamic characteristics pF Input capacitance C iss Output capacitance C oss Reverse transfer capacitance Crss - 19 29 Turn-on delay time t d(on) - 4.2 6.3 Rise time tr - 3.4 5.1 Turn-off delay time t d(off) - 50.3 75.5 Fall time tf - 14.3 21.5 Gate to source charge Q gs - 0.6 0.8 Gate to drain charge Q gd - 2.5 3.7 Gate charge total Qg - 8.7 13.1 Gate plateau voltage V plateau - 2.4 - V - - 2.1 A - - 10.0 - 0.8 1.1 V - 29 36 ns - 58 73 nC V GS=0 V, V DS=25 V, f =1 MHz V DD=37.5 V, V GS=10 V, I D=2.5 A, R G,ext=6 Ω ns Gate Charge Characteristics V DD=37.5 V, I D=2.5 A, V GS=0 to 10 V nC Reverse Diode Diode continous forward current IS Diode pulse current I S,pulse Diode forward voltage V SD Reverse recovery time t rr Reverse recovery charge Q rr Rev 2.0 T A=25 °C V GS=0 V, I F=2.5 A, T j=25 °C V R=37.5 V, I F=2.5 A, di F/dt =200 A/µs page 3 2014-09-30 BSL716SN 1 Power dissipation 2 Drain current P tot=f(T A) I D=f(T A); V GS≥10 V 2.5 3 2.5 2 2 ID [A] Ptot [W] 1.5 1.5 1 1 0.5 0.5 0 0 0 40 80 120 0 160 40 80 TA [°C] 120 160 TA [°C] 3 Safe operating area 4 Max. transient thermal impedance I D=f(V DS); T A=25 °C; D =0 Z thJA=f(t p) parameter: t p parameter: D =t p/T 102 0.5 101 10 µs 1 µs 100 µs 0.2 1 ms ZthJA [K/W] 100 ID [A] 10 ms 10-1 0.1 101 0.05 5s 0.02 10-2 0.01 single pulse 10-3 100 10-1 100 101 102 103 VDS [V] Rev 2.0 10-4 10-3 10-2 10-1 100 101 102 tp [s] page 4 2014-09-30 BSL716SN 5 Typ. output characteristics 6 Typ. drain-source on resistance I D=f(V DS); T j=25 °C R DS(on)=f(I D); T j=25 °C parameter: V GS parameter: V GS 400 10 9 10 V 8 2.5 V 5V 300 3V 7 RDS(on) [mΩ] 3V 6 ID [A] 2.8 V 200 5 4 4V 3 10 V 2.5 V 100 2 1 2V 0 0 0 2 4 0 6 1 2 3 4 VDS [V] 5 6 7 8 9 10 7 8 9 10 ID [A] 7 Typ. transfer characteristics 8 Typ. forward transconductance I D=f(V GS); |V DS|>2|I D|R DS(on)max g fs=f(I D); T j=25 °C 13 10 12 9 11 10 7 9 6 8 gfs [S] ID [A] 8 5 7 6 4 5 3 4 3 2 2 1 1 0 0 0 1 2 150 °C Rev 2.0 3 4 VGS [V]25 °C 0 1 2 3 4 5 6 ID [A] page 5 2014-09-30 BSL716SN 9 Drain-source on-state resistance 10 Typ. gate threshold voltage R DS(on)=f(T j); I D=2.5 A; V GS=10 V V GS(th)=f(T j); V DS=VGS; I D=218 µA parameter: I D 400 2.5 350 2 300 1.5 VGS(th) [V] RDS(on) [mΩ] 250 200 max 150 max typ 1 typ 100 min 0.5 50 0 0 -60 -40 -20 0 20 40 60 80 100 120 140 160 -60 -40 -20 0 20 40 60 80 100 120 140 160 Tj [°C] Tj [°C] 11 Typ. capacitances 12 Forward characteristics of reverse diode C =f(V DS); V GS=0 V; f =1 MHz; Tj=25°C I F=f(V SD) parameter: T j 103 101 25 °C Ciss 150 °C IF [A] 100 C [pF] 102 Coss Crss 101 10-1 150 °C, 98% 25 °C, 98% 100 10-2 0 10 20 30 40 50 60 70 80 90 100 VDS [V] Rev 2.0 0 0.2 0.4 0.6 0.8 1 1.2 1.4 VSD [V] page 6 2014-09-30 BSL716SN 13 Avalanche characteristics 14 Typ. gate charge I AS=f(t AV); R GS=25 Ω V GS=f(Q gate); I D=2.5 A pulsed parameter: T j(start) parameter: V DD 101 40 V 10 9 60 V 20 V 8 7 100 °C 25 °C 6 VGS [V] IAV [A] 125 °C 100 5 4 3 2 1 0 10-1 100 101 102 0 103 1 2 3 4 5 6 7 8 9 10 Qgate [nC] tAV [µs] 15 Drain-source breakdown voltage 16 Gate charge waveforms V BR(DSS)=f(T j); I D=250 µA 96 V GS 92 Qg 88 VBR(DSS) [V] 84 80 76 V g s(th) 72 68 Q g (th) 64 Q sw Q gs 60 -60 -20 20 60 100 140 Q gate Q gd 180 Tj [°C] Rev 2.0 page 7 2014-09-30 BSL716SN TSOP6 Package Outline: Note: For symmetric types there is no defined Pin 1 orientation in the reel. Rev 2.0 page 8 2014-09-30 BSL716SN RevisionHistory BSL716SN Revision:2014-10-03,Rev.2.0 Previous Revision Revision Date Subjects (major changes since last revision) 2.0 2014-10-03 Release of final version WeListentoYourComments Anyinformationwithinthisdocumentthatyoufeeliswrong,unclearormissingatall?Yourfeedbackwillhelpustocontinuously improvethequalityofthisdocument.Pleasesendyourproposal(includingareferencetothisdocument)to: erratum@infineon.com Publishedby InfineonTechnologiesAG 81726München,Germany ©2014InfineonTechnologiesAG AllRightsReserved. LegalDisclaimer Theinformationgiveninthisdocumentshallinnoeventberegardedasaguaranteeofconditionsorcharacteristics.With respecttoanyexamplesorhintsgivenherein,anytypicalvaluesstatedhereinand/oranyinformationregardingtheapplication ofthedevice,InfineonTechnologiesherebydisclaimsanyandallwarrantiesandliabilitiesofanykind,includingwithout limitation,warrantiesofnon-infringementofintellectualpropertyrightsofanythirdparty. Information Forfurtherinformationontechnology,deliverytermsandconditionsandpricespleasecontactyournearestInfineon TechnologiesOffice(www.infineon.com). Warnings Duetotechnicalrequirements,componentsmaycontaindangeroussubstances.Forinformationonthetypesinquestion, pleasecontactthenearestInfineonTechnologiesOffice. TheInfineonTechnologiescomponentdescribedinthisDataSheetmaybeusedinlife-supportdevicesorsystemsand/or automotive,aviationandaerospaceapplicationsorsystemsonlywiththeexpresswrittenapprovalofInfineonTechnologies,ifa failureofsuchcomponentscanreasonablybeexpectedtocausethefailureofthatlife-support,automotive,aviationand aerospacedeviceorsystemortoaffectthesafetyoreffectivenessofthatdeviceorsystem.Lifesupportdevicesorsystemsare intendedtobeimplantedinthehumanbodyortosupportand/ormaintainandsustainand/orprotecthumanlife.Iftheyfail,itis reasonabletoassumethatthehealthoftheuserorotherpersonsmaybeendangered. 9 Rev.2.0,2014-10-03