BSL373SNH6327XTSA1

Mosfet MetalOxideSemiconductorFieldEffectTransistor OptiMOS™Small-Signal-Transistor,100V BSL373SN DataSheet Rev.2.0 Final Industrial&Multimarket BSL373SN OptiMOS™ Small-Signal-Transistor Product Summary Features • N-channel • Enhancement mode VDS 100 V RDS(on),max 0.23 Ω ID 2.0 A • Avalanche rated • Qualified according to AEC Q101 • RoHS compliant TSOP6 • Halogen-free acording to IEC61249-2-21 6 5 4 1 2 3 Type Package Tape and Reel Info Marking Halogen Free Packing BSL373SN TSOP6 H6327: 3000 pcs/ reel sPY Yes Non dry Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Symbol Conditions Continuous drain current ID Value T A=25 °C 2.0 T A=70 °C 1.6 Unit A Pulsed drain current I D,pulse T A=25 °C 8.0 Avalanche energy, single pulse E AS I D=2 A, R GS=25 Ω 33 mJ Reverse diode dv /dt dv /dt I D=2 A, V DS=50 V, di /dt =200 A/µs, T j,max=150 °C 6 kV/µs Gate source voltage V GS Power dissipation1) P tot Operating and storage temperature T j, T stg ESD Class T A=25 °C JESD22-A114 -HBM Soldering Temperature V 2.0 W -55 ... 150 °C 0 (2|I D|R DS(on)max, I D=1.6 A 3.35 - S 1) Device on 40mm x 40mm x 1.5mm epoxy PCB FR4 with 6cm² (one layer, 70µm thick) copper area for drain connection. PCB is vertical in still air. (t < 5 sec.) Rev 2.0 page 2 2014-10-16 BSL373SN Parameter Values Symbol Conditions Unit min. typ. max. - 199 265 - 36 48 Dynamic characteristics2) Input capacitance C iss Output capacitance C oss Reverse transfer capacitance Crss - 14 21 Turn-on delay time t d(on) - 4.7 7.1 Rise time tr - 5.9 8.9 Turn-off delay time t d(off) - 20.6 30.9 Fall time tf - 13.6 20.4 Gate to source charge Q gs - 0.8 1.1 Gate to drain charge Q gd - 2.7 4.0 Gate charge total Qg - 6.2 9.3 Gate p plateau voltage g V plateau - 4.1 - V - - 2.0 A - - 7.9 - 0.8 1.1 V - 27 41 ns - 60 90 nC V GS=0 V, V DS=25 V, f =1 MHz V DD=50 V, V GS=10 V, I D=2 A, R G,ext=6 Ω pF ns Gate Charge Characteristics2) V DD=50 V, I D=2 A, V GS=0 to 10 V nC Reverse Diode Diode continous forward current IS Diode pulse current I S,pulse Diode forward voltage V SD Reverse recovery time2) t rr Reverse recovery charge2) Q rr 2) T A=25 °C V GS=0 V, I F=2 A, T j=25 °C V R=50 V, I F=2 A, di F/dt =200 A/µs Defined by design. Not subjected to production test Rev 2.0 page 3 2014-10-16 BSL373SN 1 Power dissipation 2 Drain current P tot=f(T A) I D=f(T A); V GS≥10 V 2.5 2 2 1.5 1.5 ID [A] Ptot [W] 2.5 1 1 0.5 0.5 0 0 0 40 80 120 160 0 40 80 TA [°C] 120 160 TA [°C] 3 Safe operating area 4 Max. transient thermal impedance I D=f(V DS); T A=25 °C; D =0 Z thJA=f(t p) parameter: t p parameter: D =t p/T 101 102 1 µs 10 µs 100 µs 0.5 1 ms 100 10 ms 0.2 ZthJA [K/W] ID [A] 5s 10-1 0.1 101 0.05 0.02 10-2 0.01 single pulse 10-3 100 10-1 100 101 102 103 VDS [V] Rev 2.0 10-4 10-3 10-2 10-1 100 101 102 tp [s] page 4 2014-10-16 BSL373SN 5 Typ. output characteristics 6 Typ. drain-source on resistance I D=f(V DS); T j=25 °C R DS(on)=f(I D); T j=25 °C parameter: V GS parameter: V GS 8 800 7 10 V 6 700 6V 600 5.5 V 500 RDS(on) [mΩ] ID [A] 5 4 400 5V 3 300 2 200 5V 5.5 V 6V 10 V 4.5 V 1 100 4V 0 0 0 2 4 6 0 1 2 3 VDS [V] 4 5 6 7 5 6 7 ID [A] 7 Typ. transfer characteristics 8 Typ. forward transconductance I D=f(V GS); |V DS|>2|I D|R DS(on)max g fs=f(I D); T j=25 °C 7 6 6 5 5 4 4 ID [A] gfs [S] 7 3 2 3 2 150 °C 25 °C 1 1 0 0 0 1 2 3 4 5 6 VGS [V] Rev 2.0 0 1 2 3 4 ID [A] page 5 2014-10-16 BSL373SN 9 Drain-source on-state resistance 10 Typ. gate threshold voltage R DS(on)=f(T j); I D=2 A; V GS=10 V V GS(th)=f(T j); V DS=VGS; I D=218 µA parameter: I D 600 5 500 4 max 3 typ VGS(th) [V] RDS(on) [mΩ] 400 300 max 200 min 2 typ 1 100 0 0 -60 -20 20 60 100 140 -60 -10 Tj [°C] 40 90 140 Tj [°C] 11 Typ. capacitances 12 Forward characteristics of reverse diode C =f(V DS); V GS=0 V; f =1 MHz; Tj=25°C I F=f(V SD) parameter: T j 103 101 Ciss 25 °C 150 °C 100 IF [A] C [pF] 102 150 °C, 98% Coss 101 10-1 Crss 25 °C, 98% 100 10-2 0 10 20 30 40 50 60 70 80 90 100 VDS [V] Rev 2.0 0 0.2 0.4 0.6 0.8 1 1.2 1.4 VSD [V] page 6 2014-10-16 BSL373SN 13 Avalanche characteristics 14 Typ. gate charge I AS=f(t AV); R GS=25 Ω V GS=f(Q gate); I D=2 A pulsed parameter: T j(start) parameter: V DD 101 50 V 10 9 20 V 80 V 8 7 6 VGS [V] IAV [A] 25 °C 100 °C 125 °C 100 5 4 3 2 1 0 10-1 100 101 102 0 103 1 2 3 4 5 6 7 Qgate [nC] tAV [µs] 15 Drain-source breakdown voltage 16 Gate charge waveforms V BR(DSS)=f(T j); I D=250 µA 120 V GS 116 Qg 112 VBR(DSS) [V] 108 104 100 V g s(th) 96 92 88 Q g (th) Q sw 84 Q gs 80 -60 -20 20 60 100 140 Q gate Q gd 180 Tj [°C] Rev 2.0 page 7 2014-10-16 BSL373SN TSOP6 Package Outline: Note: For symmetric types there is no defined Pin 1 orientation in the reel. Rev 2.0 page 8 2014-10-16 BSL373SN RevisionHistory BSL373SN Revision:2014-10-22,Rev.2.0 Previous Revision Revision Date Subjects (major changes since last revision) 2.0 2014-10-22 Release of final version WeListentoYourComments Anyinformationwithinthisdocumentthatyoufeeliswrong,unclearormissingatall?Yourfeedbackwillhelpustocontinuously improvethequalityofthisdocument.Pleasesendyourproposal(includingareferencetothisdocument)to: erratum@infineon.com Publishedby InfineonTechnologiesAG 81726München,Germany ©2014InfineonTechnologiesAG AllRightsReserved. LegalDisclaimer Theinformationgiveninthisdocumentshallinnoeventberegardedasaguaranteeofconditionsorcharacteristics.With respecttoanyexamplesorhintsgivenherein,anytypicalvaluesstatedhereinand/oranyinformationregardingtheapplication ofthedevice,InfineonTechnologiesherebydisclaimsanyandallwarrantiesandliabilitiesofanykind,includingwithout limitation,warrantiesofnon-infringementofintellectualpropertyrightsofanythirdparty. Information Forfurtherinformationontechnology,deliverytermsandconditionsandpricespleasecontactyournearestInfineon TechnologiesOffice(www.infineon.com). Warnings Duetotechnicalrequirements,componentsmaycontaindangeroussubstances.Forinformationonthetypesinquestion, pleasecontactthenearestInfineonTechnologiesOffice. TheInfineonTechnologiescomponentdescribedinthisDataSheetmaybeusedinlife-supportdevicesorsystemsand/or automotive,aviationandaerospaceapplicationsorsystemsonlywiththeexpresswrittenapprovalofInfineonTechnologies,ifa failureofsuchcomponentscanreasonablybeexpectedtocausethefailureofthatlife-support,automotive,aviationand aerospacedeviceorsystemortoaffectthesafetyoreffectivenessofthatdeviceorsystem.Lifesupportdevicesorsystemsare intendedtobeimplantedinthehumanbodyortosupportand/ormaintainandsustainand/orprotecthumanlife.Iftheyfail,itis reasonabletoassumethatthehealthoftheuserorotherpersonsmaybeendangered. 9 Rev.2.0,2014-10-22