BSL802SN
OptiMOS™2 Small-Signal-Transistor
Product Summary
Features
VDS
• N-channel
RDS(on),max
• Enhancement mode
• Ultra Logic level (1.8V rated)
20
V
VGS=2.5 V
22
mW
VGS=1.8 V
31
ID
7.5
A
• Avalanche rated
• Qualified according to AEC Q101
PG-TSOP6
• 100% lead-free; RoHS compliant
6
• Halogen free according to IEC61249-2-21
5
4
1
2
3
Type
Package
Tape and Reel Information
Marking
Lead Free
Packing
BSL802SN
PG-TSOP6
H6327: 3000 pcs/ reel
sPP
Yes
Non dry
Maximum ratings, at T j=25 °C, unless otherwise specified
Parameter
Symbol Conditions
Continuous drain current
ID
Value
T A=25 °C
7.5
T A=70 °C
6.0
Unit
A
Pulsed drain current
I D,pulse
T A=25 °C
30
Avalanche energy, single pulse
E AS
I D=7.5 A, R GS=25 W
30
mJ
Reverse diode dv /dt
dv /dt
I D=7.5 A, V DS=16 V,
di /dt =200 A/µs,
T j,max=150 °C
6
kV/µs
Gate source voltage
V GS
±8
V
Power dissipation 1)
P tot
2
W
Operating and storage temperature
T j, T stg
-55 ... 150
°C
ESD Class
T A=25 °C
JESD22-A114 -HBM
Soldering Temperature
260 °C
IEC climatic category; DIN IEC 68-1
Rev 2.3
0 (2|I D|R DS(on)max,
I D=6 A
S
1)
Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm 2 (single layer, 70 µm thick) copper area for drain
connection. PCB is vertical in still air. (t < 5 sec.)
Rev 2.3
page 2
2013-11-07
BSL802SN
Parameter
Values
Symbol Conditions
Unit
min.
typ.
max.
-
1013
1347
-
290
385
Dynamic characteristics
Input capacitance
C iss
Output capacitance
C oss
Reverse transfer capacitance
Crss
-
51
77
Turn-on delay time
t d(on)
-
10
-
Rise time
tr
-
30
-
Turn-off delay time
t d(off)
-
20
-
Fall time
tf
-
5.5
-
Gate to source charge
Q gs
-
1.6
-
Gate to drain charge
Q gd
-
1.6
-
Gate charge total
Qg
-
4.7
-
Gate plateau voltage
V plateau
-
1.5
-
V
-
-
1.8
A
-
-
30
-
0.86
1.1
V
-
15
-
ns
-
5.1
-
nC
V GS=0 V, V DS=10 V,
f =1 MHz
V DD=10 V, V GS=2.5 V,
I D=3.7 A, R G,ext=6 W
pF
ns
Gate Charge Characteristics
V DD=10 V, I D=7.5 A,
V GS=0 to 2.5 V
nC
Reverse Diode
Diode continous forward current
IS
Diode pulse current
I S,pulse
Diode forward voltage
V SD
Reverse recovery time
t rr
Reverse recovery charge
Q rr
Rev 2.3
T A=25 °C
V GS=0 V, I F=7.5 A,
T j=25 °C
V R=10 V, I F=7.5 A,
di F/dt =100 A/µs
page 3
2013-11-07
BSL802SN
1 Power dissipation
2 Drain current
P tot=f(T A)
I D=f(T A); V GS≥2.5 V
8
2
7
6
1.6
1.2
ID [A]
Ptot [W]
5
4
3
0.8
2
0.4
1
0
0
0
40
80
120
160
0
40
80
TA [°C]
120
160
TA [°C]
3 Safe operating area
4 Max. transient thermal impedance
I D=f(V DS); T A=25 °C; D =0
Z thJA=f(t p)
parameter: t p
parameter: D =t p/T
102
102
limited by on-state
resistance
10 µs
0.5
100 µs
101
1 ms
0.2
101
0.1
10 ms
ZthJA [K/W]
ID [A]
100
5s
10-1
0.05
0.02
100
0.01
10-2
single pulse
10-3
10-1
10-2
10-1
100
101
102
VDS [V]
Rev 2.3
10-5
10-4
10-3
10-2
10-1
100
101
tp [s]
page 4
2013-11-07
BSL802SN
5 Typ. output characteristics
6 Typ. drain-source on resistance
I D=f(V DS); T j=25 °C
R DS(on)=f(I D); T j=25 °C
parameter: V GS
parameter: V GS
80
8
1.2 V
1.8 V
2.5 V
70
1.6 V
1.3 V
6
1.4 V
60
1.5 V
1.5 V
RDS(on) [mW]
ID [A]
50
4
1.4 V
40
1.6 V
30
1.8 V
1.3 V
2
20
1.2 V
2.5 V
10
1.1 V
0
0
0
0
0.2
0.4
0.6
0.8
0
1
2
4
VDS [V]
6
8
ID [A]
7 Typ. transfer characteristics
8 Typ. forward transconductance
I D=f(V GS); |V DS|>2|I D|R DS(on)max
g fs=f(I D); T j=25 °C
8
30
7
25
6
20
gfs [S]
ID [A]
5
4
3
150 °C
15
25 °C
10
2
5
1
0
0
0
1
2
VGS [V]
Rev 2.3
0
1
2
3
4
5
6
7
8
ID [A]
page 5
2013-11-07
BSL802SN
9 Drain-source on-state resistance
10 Typ. gate threshold voltage
R DS(on)=f(T j); I D=7.5 A; V GS=2.5 V
V GS(th)=f(T j); V DS=VGS; I D=30 µA
parameter: I D
40
1.2
30
0.8
98 %
VGS(th) [V]
RDS(on) [mW]
98 %
20
typ
10
typ
0.4
2%
0
0
-0.4
-60
-20
20
60
100
140
180
-60
-20
20
Tj [°C]
60
100
140
180
Tj [°C]
11 Typ. capacitances
12 Forward characteristics of reverse diode
C =f(V DS); V GS=0 V; f =1 MHz; Tj=25°C
I F=f(V SD)
parameter: T j
104
101
25 °C
100
Ciss
103
IF [A]
C [pF]
150 °C, 98%
Coss
10-1
150 °C
102
25 °C, 98%
Crss
10-2
101
10-3
0
5
10
15
20
VDS [V]
Rev 2.3
0
0.2
0.4
0.6
0.8
1
1.2
VSD [V]
page 6
2013-11-07
BSL802SN
13 Avalanche characteristics
14 Typ. gate charge
I AS=f(t AV); R GS=25 W
V GS=f(Q gate); I D=7.5 A pulsed
parameter: T j(start)
parameter: V DD
101
5
4.5
25 °C
100 °C
4
125 °C
3.5
10 V
VGS [V]
IAV [A]
3
100
16 V
2.5
4V
2
1.5
1
0.5
10-1
0
100
101
102
0
103
1
2
tAV [µs]
3
4
5
6
7
8
9
10
Qgate [nC]
15 Drain-source breakdown voltage
16 Gate charge waveforms
V BR(DSS)=f(T j); I D=250 µA
25
V GS
24
Qg
23
VBR(DSS) [V]
22
21
20
V gs(th)
19
18
Q g(th)
17
Q sw
Q gs
16
-60
-20
20
60
100
Q gate
Q gd
140
Tj [°C]
Rev 2.3
page 7
2013-11-07
BSL802SN
TSOP6
Package Outline:
Footprint:
Packaging:
Dimensions in mm
Rev 2.3
page 8
2013-11-07
BSL802SN
Published by
Infineon Technologies AG
81726 Munich, Germany
© 2008 Infineon Technologies AG
All Rights Reserved.
Legal Disclaimer
The information given in this document shall in no event be regarded as a guarantee of
conditions or characteristics. With respect to any examples or hints given herein, any typical
values stated herein and/or any information regarding the application of the device,
Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind,
including without limitation, warranties of non-infringement of intellectual property rights
of any third party.
Information
For further information on technology, delivery terms and conditions and prices, please
contact the nearest Infineon Technologies Office (www.infineon.com).
Warnings
Due to technical requirements, components may contain dangerous substances. For information
on the types in question, please contact the nearest Infineon Technologies Office.
Infineon Technologies components may be used in life-support devices or systems only with
the express written approval of Infineon Technologies, if a failure of such components can
reasonably be expected to cause the failure of that life-support device or system or to affect
the safety or effectiveness of that device or system. Life support devices or systems are
intended to be implanted in the human body or to support and/or maintain and sustain
and/or protect human life. If they fail, it is reasonable to assume that the health of the user
or other persons may be endangered.
Rev 2.3
page 9
2013-11-07
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