BSO211P

BSO211P OptiMOS -P Power-Transistor TM Product Summary Feature • Dual P-Channel • Enhancement mode • 150°C operating temperature • Avalanche rated • dv/dt rated BSO211P P-SO 8 V RDS(on) 67 mΩ -4.7 S1 1 8 D1 G1 2 7 D1 S2 3 6 D2 G2 4 5 D2 Top View Package -20 ID • Super Logic Level (2.5 V rated) Type VDS A SIS00070 Maximum Ratings,at Tj = 25 °C, unless otherwise specified Parameter Symbol Continuous drain current ID Value A TA=25°C -4.7 TA=70°C -3.8 ID puls Pulsed drain current Unit -18.8 TA=25°C EAS 28 mJ dv/dt -6 kV/µs Gate source voltage VGS ±12 V Power dissipation Ptot 2 W -55... +150 °C Avalanche energy, single pulse ID =-4.7 A , VDD =-10V, RGS =25Ω Reverse diode dv/dt IS =-4.7A, VDS =-16V, di/dt=200A/µs, Tjmax =150°C TA=25°C Tj , Tstg Operating and storage temperature IEC climatic category; DIN IEC 68-1 Rev.1.2 55/150/56 Page 1 2002-01-22 BSO211P Thermal Characteristics Symbol Parameter Values Unit min. typ. max. - - 50 @ min. footprint, t