BSP372L6327

BSP 372 SIPMOS ® Small-Signal Transistor • N channel • Enhancement mode • Logic Level • Avalanche rated • VGS(th) = 0.8 ...2.0 V • Pb-free lead plating; RoHS compliant Type VDS ID RDS(on) BSP 372 100 V 1.7 A 0.31 Ω Type BSP 372 BSP 372 Package P-SOT-223 PG-SOT-223 Pin 1 Pin 2 Pin 3 Pin 4 G D S D Tape and Reel Information E6327 L6327 Maximum Ratings Parameter Symbol Continuous drain current ID TA = 28 ˚C Values Unit A 1.7 DC drain current, pulsed IDpuls TA = 25 ˚C 6.8 Avalanche energy, single pulse mJ EAS ID = 1.7 A, VDD = 25 V, RGS = 25 Ω L = 23.3 mH, Tj = 25 ˚C 45 Gate source voltage VGS ± 14 Gate-source peak voltage,aperiodic Vgs ± 20 Power dissipation Ptot TA = 25 ˚C Rev 1.1 V W 1.8 1 2005-11-23 BSP 372 Maximum Ratings Parameter Symbol Values Chip or operating temperature Tj -55 ... + 150 Storage temperature Tstg -55 ... + 150 Thermal resistance, chip to ambient air 1) RthJA ≤ 70 Thermal resistance, junction-soldering point 1) RthJS ≤ 10 IEC climatic category, DIN IEC 68-1 Unit ˚C K/W 55 / 150 / 56 1) Transistor on epoxy pcb 40 mm x 40 mm x 1,5 mm with 6 cm2 copper area for drain connection Electrical Characteristics, at Tj = 25˚C, unless otherwise specified Parameter Symbol Values min. typ. Unit max. Static Characteristics Drain- source breakdown voltage VGS = 0 V, ID = 0.25 mA, Tj = 0 ˚C Gate threshold voltage 100 - - 0.8 1.4 2 V GS(th) VGS=VDS, ID = 1 mA Zero gate voltage drain current V V (BR)DSS µA IDSS VDS = 100 V, V GS = 0 V, Tj = 25 ˚C - 0.1 1 VDS = 100 V, V GS = 0 V, Tj = 125 ˚C - 10 100 Gate-source leakage current VGS = 20 V, VDS = 0 V Drain-Source on-state resistance - 10 100 Ω RDS(on) VGS = 5 V, ID = 1.7 A Rev 1.1 nA IGSS - 2 0.24 0.31 2005-11-23 BSP 372 Electrical Characteristics, at Tj = 25˚C, unless otherwise specified Parameter Symbol Values min. typ. Unit max. Dynamic Characteristics Transconductance VDS≥ 2 * ID * RDS(on)max, ID = 1.7 A Input capacitance 2 pF - 415 520 - 80 100 - 50 65 Crss VGS = 0 V, V DS = 25 V, f = 1 MHz Turn-on delay time - Coss VGS = 0 V, V DS = 25 V, f = 1 MHz Reverse transfer capacitance 3.7 Ciss VGS = 0 V, V DS = 25 V, f = 1 MHz Output capacitance S gfs ns td(on) VDD = 30 V, VGS = 5 V, ID = 0.3 A RG = 50 Ω Rise time - 20 30 - 35 55 - 110 165 - 50 75 tr VDD = 30 V, VGS = 5 V, ID = 0.3 A RG = 50 Ω Turn-off delay time td(off) VDD = 30 V, VGS = 5 V, ID = 0.3 A RG = 50 Ω Fall time tf VDD = 30 V, VGS = 5 V, ID = 0.3 A RG = 50 Ω Rev 1.1 3 2005-11-23 BSP 372 Electrical Characteristics, at Tj = 25˚C, unless otherwise specified Parameter Symbol Values min. typ. Unit max. Reverse Diode Inverse diode continuous forward current TA = 25 ˚C Inverse diode direct current,pulsed - - 6.8 V 0.85 1.1 ns trr - 65 µC Qrr VR = 30 V, IF=lS, diF/dt = 100 A/µs Rev 1.1 1.7 - VR = 30 V, IF=lS, diF/dt = 100 A/µs Reverse recovery charge - V SD VGS = 0 V, IF = 1.7 A Reverse recovery time ISM TA = 25 ˚C Inverse diode forward voltage A IS - 4 0.11 - 2005-11-23 BSP 372 Power dissipation Ptot = ƒ(TA) Drain current ID = ƒ(TA) parameter: VGS ≥ 5 V 2.0 1.8 W Ptot A 1.6 ID 1.4 1.4 1.2 1.2 1.0 1.0 0.8 0.8 0.6 0.6 0.4 0.4 0.2 0.2 0.0 0.0 0 20 40 60 80 100 120 ˚C 160 0 20 40 60 80 100 TA 120 ˚C 160 TA Safe operating area ID=f(VDS) Transient thermal impedance Zth JA = ƒ(tp ) parameter: D = tp / T parameter : D = 0, TC=25˚C 10 2 K/W 10 1 ZthJA 10 0 10 -1 D = 0.50 10 -2 0.20 0.10 10 -3 0.05 single pulse 10 -4 0.02 0.01 10 -5 -8 -7 -6 -5 -4 -3 -2 -1 0 10 10 10 10 10 10 10 10 s 10 tp Rev 1.1 5 2005-11-23 BSP 372 Typ. output characteristics ID = ƒ(VDS) parameter: tp = 80 µs 3.8 A k lj h Ptot = 2W g i fe d Typ. drain-source on-resistance RDS (on) = ƒ(ID) parameter: tp = 80 µs, Tj = 25 ˚C 1.0 c Ω 3.2 VGS [V] a 2.0 ID 2.8 2.4 2.0 1.6 b 1.2 b 2.5 c 3.0 d 3.5 e 4.0 f 4.5 g 5.0 h 6.0 i 7.0 j 8.0 k 9.0 l 10.0 RDS (on) 0.8 0.7 0.6 0.5 0.4 0.2 0.4 0.1 V b 0.3 0.8 0.0 a 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 a i j VGS [V] = 0.0 0.0 5.0 c d f e g h k a 2.5 2.0 b 3.0 0.2 c 3.5 d 4.0 0.4 e f 4.5 5.0 0.6 g 6.0 0.8 h i 7.0 8.0 1.0 VDS j 9.0 k 10.0 A Typ. transfer characteristics ID = f(VGS) Typ. forward transconductance gfs = f (ID) parameter: tp = 80 µs parameter: tp = 80 µs, VDS≥ 2 x ID x RDS(on)max V DS≥2 x ID x RDS(on)max 6.5 6.5 A S 5.5 ID 5.5 gfs 5.0 5.0 4.5 4.5 4.0 4.0 3.5 3.5 3.0 3.0 2.5 2.5 2.0 2.0 1.5 1.5 1.0 1.0 0.5 0.5 0.0 0 1 2 3 4 5 6 7 8 V 10 VGS Rev 1.1 1.4 ID 0.0 0.0 1.0 2.0 3.0 4.0 A 6.0 ID 6 2005-11-23 BSP 372 Drain-source on-resistance RDS (on) = ƒ(Tj ) parameter: ID = 1.7 A, VGS = 5 V Gate threshold voltage VGS (th) = ƒ(Tj ) parameter: VGS = VDS, ID = 1 mA 1.0 4.6 Ω V 4.0 RDS (on) 0.8 VGS(th) 0.7 3.6 3.2 0.6 2.8 0.5 2.4 98% 0.4 98% 2.0 typ 1.6 typ 0.3 1.2 2% 0.2 0.8 0.1 0.4 0.0 -60 -20 20 60 100 ˚C 0.0 -60 160 -20 20 60 100 ˚C Tj 160 Tj Typ. capacitances Forward characteristics of reverse diode IF = ƒ(VSD) parameter: Tj , tp = 80 µs C = f (VDS) parameter:VGS=0V, f = 1 MHz 10 4 10 1 pF A IF C 10 3 10 0 Ciss 10 2 10 -1 Tj = 25 ˚C typ Coss Tj = 150 ˚C typ Crss Tj = 25 ˚C (98%) Tj = 150 ˚C (98%) 10 1 0 5 10 15 20 25 30 V 40 0.4 0.8 1.2 1.6 2.0 2.4 V 3.0 VSD VDS Rev 1.1 10 -2 0.0 7 2005-11-23 BSP 372 Avalanche energy EAS = ƒ(Tj) parameter: ID = 1.7 A, VDD = 25 V RGS = 25 Ω, L = 23.3 mH Drain-source breakdown voltage V(BR)DSS = ƒ(Tj) 50 120 V mJ 116 EAS 40 V(BR)DSS114 112 35 110 30 108 106 25 104 20 102 100 15 98 10 96 94 5 0 20 40 60 80 100 120 ˚C 160 Tj 92 90 -60 -20 20 60 100 ˚C 160 Tj Safe operating area ID=f(VDS) parameter : D = 0.01, TC=25˚C Rev 1.1 8 2005-11-23