BSS225H6327FTSA1

Type BSS225 SIPMOS® Small-Signal-Transistor Product Summary Feature 600 V R DS(on),max 45 Ω ID 0.09 A V DS • n-channel • enhancement mode 1) • Logic level • dv /dt rated • Qualified according to AEC Q101 SOT89 • Halogen­free according to IEC61249­2­21 Type Package Pb-free Tape and Reel Information Marking BSS225 SOT89 Yes H6327: 1000PCS/reel KD Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Symbol Conditions Continuous drain current ID Value T A=25 °C 0.09 T A=70 °C 0.073 I D,pulse T A=25 °C 0.36 Reverse diode dv /dt dv /dt I D=0.09 A, V DS=480 V, di /dt =200 A/µs, T j,max=150 °C Gate source voltage V GS Pulsed drain current 6 ±20 Unit A kV/µs V ESD Class JESD22­A114­HBM                                                                                                   Class 1a Power dissipation P tot Operating and storage temperature T j, T stg T A=25 °C IEC climatic category; DIN IEC 68-1 Rev 1.29 1.00 W -55 ... 150 °C 55/150/56 page 1 2020-07-28 BSS225 Parameter Values Symbol Conditions Unit min. typ. max. - - 125 Thermal characteristics Thermal resistance, junction - minimal footprint R thJA K/W Electrical characteristics, at T j=25 °C, unless otherwise specified Static characteristics Drain-source breakdown voltage 1) V (BR)DSS V GS=0 V, I D=250 µA 600 - - Gate threshold voltage V GS(th) V DS =V GS ; ID=94 µA 1.3 1.9 2.3 Drain-source leakage current I D (off) V DS=600 V, V GS=0 V, T j=25 °C - - 0.1 V DS=600 V, V GS=0 V, T j=150 °C - - 5 V µA Gate-source leakage current I GSS V GS=20 V, V DS=0 V - 10 100 nA Drain-source on-state resistance R DS(on) V GS=4.5 V, I D=0.09 A - 30 45 W V GS=10 V, I D=0.09 A - 28 45 |V DS|>2|I D|R DS(on)max, I D=0.075 A 0.05 0.14 - Transconductance 1) g fs S VDS is zero-hour rated, see note at p.8 Rev. 1.29 page 2 2020-07-28 BSS225 Parameter Values Symbol Conditions Unit min. typ. max. - 99 131 - 7.6 11 Dynamic characteristics Input capacitance C iss Output capacitance C oss Reverse transfer capacitance Crss - 3.1 4.4 Turn-on delay time t d(on) - 14.0 20.0 Rise time tr - 38.0 57.0 Turn-off delay time t d(off) - 62.0 93 Fall time tf - 41.0 62 Gate to source charge Q gs - 0.32 0.43 Gate to drain charge Q gd - 1.4 2.1 Gate charge total Qg - 3.9 5.8 Gate plateau voltage V plateau - 3.3 - V - - 0.09 A - - 0.36 - 0.75 1.2 V - 246 370 ns - 248 373 nC V GS=0 V, V DS=25 V, f =1 MHz V DD=300 V, V GS=10 V, I D=0.09 A, R G=6 Ω pF ns Gate Charge Characteristics V DD=400 V, I D=0.09 A, V GS=0 to 10 V nC Reverse Diode Diode continous forward current IS Diode pulse current I S,pulse Diode forward voltage V SD Reverse recovery time t rr Reverse recovery charge Q rr Rev. 1.29 T A=25 °C V GS=0 V, I F=0.09 A, T j=25 °C V R=300 V, I F=0.09 A, di F/dt =100 A/µs page 3 2020-07-28 BSS225 1 Power dissipation 2 Drain current P tot=f(T A) I D=f(T A); V GS≥10 V 0.1 1 0.08 0.75 I D [A] P tot [W] 0.06 0.5 0.04 0.25 0.02 0 0 0 40 80 120 0 160 40 80 T A [°C] 120 160 T A [°C] 3 Safe operating area 4 Max. transient thermal impedance I D=f(V DS); T A=25 °C; D =0 Z thJA=f(t p) parameter: t p parameter: D =t p/T 100 103 20 µs limited by on-state resistance 100 µs 0.5 -1 1 ms Z thJA [K/W] 0.2 I D [A] 10 102 1000 ms 0.1 101 0.05 0.02 0.01 100 DC single pulse 10-1 10-3 1 10 100 1000 10-4 10-3 10-2 10-1 100 101 102 103 t p [s] V DS [V] Rev. 1.29 10-5 page 4 2020-07-28 BSS225 5 Typ. output characteristics 6 Typ. drain-source on resistance I D=f(V DS); T j=25 °C R DS(on)=f(I D); T j=25 °C parameter: V GS parameter: V GS 2.6 V3 V 3.2 V 3.6 V 3.8 V 4V 40 0.3 V 10 V5 38 0.25 V4 5V 36 10 V 34 V 3.8 R DS(on) [Ω] I D [A] 0.2 V 3.6 0.15 32 30 28 0.1 V 3.2 26 V3 24 0.05 22 V 2.6 0 20 0 1 2 3 4 5 6 7 8 9 0 10 0.1 0.2 V DS [V] 0.3 0.4 I D [A] 7 Typ. transfer characteristics 8 Typ. forward transconductance I D=f(V GS); |V DS|>2|I D|R DS(on)max g fs=f(I D); T j=25 °C 0.3 0.3 0.25 0.2 I D [A] g fs [S] 0.2 0.1 0.15 0.1 0.05 0 0 0 1 2 3 4 Rev. 1.29 0.00 0.10 0.20 0.30 I D [A] V GS [V] page 5 2020-07-28 BSS225 9 Drain-source on-state resistance 10 Typ. gate threshold voltage R DS(on)=f(T j); I D=0.1 A; V GS=10 V V GS(th)=f(T j); V DS=VGS; I D=94 µA parameter: I D 130 2.8 120 2.4 110 %98 100 2 80 V GS(th) [V] R DS(on) [Ω] 90 70 60 %98 typ 1.6 %2 1.2 50 40 0.8 typ 30 20 0.4 10 0 0 -60 -20 20 60 100 140 -60 -20 20 60 100 140 T j [°C] T j [°C] 11 Typ. capacitances 12 Forward characteristics of reverse diode C =f(V DS); V GS=0 V; f =1 MHz; Tj=25°C I F=f(V SD) parameter: T j 100 103 150 °C 25 °C 150 °C, 98% 102 10-1 25 °C, 98% I F [A] C [pF] Ciss 101 10-2 Coss Crss 100 10-3 0 10 20 30 40 50 Rev. 1.29 0 0.4 0.8 1.2 1.6 2 2.4 2.8 V SD [V] V DS [V] page 6 2020-07-28 BSS225 13 Typ. gate charge 14 Drain-source breakdown voltage V GS=f(Q gate); I D=0.1 A pulsed V BR(DSS)=f(T j); I D=250 µA parameter: V DD 700 12 680 300 V 10 660 640 V BR(DSS) [V] V GS [V] 8 480 V 120 V 6 4 620 600 580 560 540 2 520 500 0 0 0.5 1 1.5 2 2.5 3 3.5 4 Q gate [nC] Rev. 1.29 -60 -20 20 60 100 140 T j [°C] page 7 2020-07-28 BSS225 Package Outline: Footprint: Packaging: Dimensions in mm note: Due to small size of the package, creeping currents between leads external to the package can occur in the application. Extra protection from contamination for the package (i.e. protective laquer) is necessary to maintain the values, specified in this document. Values given in this document are only valid for 0 hour lifetime, if no suitable external protection is applied. Rev. 1.29 page 8 2020-07-28 BSS225 Published by Infineon Technologies AG 81726 Munich, Germany © 2008 Infineon Technologies AG All Rights Reserved. Legal Disclaimer The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics. With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation, warranties of non-infringement of intellectual property rights of any third party. Information For further information on technology, delivery terms and conditions and prices, please contact the nearest Infineon Technologies Office (www.infineon.com). Warnings Due to technical requirements, components may contain dangerous substances. For information on the types in question, please contact the nearest Infineon Technologies Office. Infineon Technologies components may be used in life-support devices or systems only with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. Rev. 1.29 page 9 2020-07-28