BSZ011NE2LS5I

BSZ011NE2LS5I MOSFET OptiMOSTM5Power-Transistor,25V TSDSON-8FL (enlarged source interconnection) Features •Optimizedforhighperformancebuckconverters •MonolithicintegratedSchottky-likediode •Verylowon-resistanceRDS(on)@VGS=4.5V •100%avalanchetested •N-channel •Pb-freeleadplating;RoHScompliant •Halogen-freeaccordingtoIEC61249-2-21 Productvalidation FullyqualifiedaccordingtoJEDECforIndustrialApplications Table1KeyPerformanceParameters S1 8D S2 7D Parameter Value Unit S3 6D VDS 25 V G4 5D RDS(on),max 1.1 mΩ ID 40 A Qoss 29 nC QG(0V..4.5V) 17 nC Type/OrderingCode Package Marking RelatedLinks BSZ011NE2LS5I PG-TSDSON-8 FL 11NE25I - Final Data Sheet 1 Rev.2.0,2019-02-04 OptiMOSTM5Power-Transistor,25V BSZ011NE2LS5I TableofContents Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Thermal characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 Electrical characteristics diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 Package Outlines . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 Revision History . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 Trademarks . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 Disclaimer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 Final Data Sheet 2 Rev.2.0,2019-02-04 OptiMOSTM5Power-Transistor,25V BSZ011NE2LS5I 1Maximumratings atTA=25°C,unlessotherwisespecified Table2Maximumratings Parameter Symbol Values Unit Note/TestCondition 40 40 40 40 35 A VGS=10V,TC=25°C VGS=10V,TC=100°C VGS=4.5V,TC=25°C VGS=4.5V,TC=100°C VGS=10V,TA=25°C, RTHJA=60°C/W1) - 160 A TC=25°C - - 119 mJ ID=20A,RGS=25Ω VGS -16 - 16 V - Power dissipation Ptot - - 69 2.1 W TC=25°C TA=25°C,RTHJA=60°C/W1) Operating and storage temperature Tj,Tstg -55 - 150 °C IEC climatic category; DIN IEC 68-1: 55/150/56 Unit Note/TestCondition Min. Typ. Max. ID - - ID,pulse - Avalanche energy, single pulse EAS Gate source voltage Continuous drain current Pulsed drain current2) 3) 2Thermalcharacteristics Table3Thermalcharacteristics Parameter Symbol Thermal resistance, junction - case, bottom Values Min. Typ. Max. RthJC - - 1.8 °C/W - Thermal resistance, junction - case, top RthJC - - 20 °C/W - Device on PCB, 6 cm² cooling area RthJA - - 60 °C/W - 1) Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm2 (one layer, 70 µm thick) copper area for drain connection. PCB is vertical in still air. 2) See Diagram 3 for more detailed information 3) See Diagram 13 for more detailed information Final Data Sheet 3 Rev.2.0,2019-02-04 OptiMOSTM5Power-Transistor,25V BSZ011NE2LS5I 3Electricalcharacteristics atTj=25°C,unlessotherwisespecified Table4Staticcharacteristics Parameter Symbol Drain-source breakdown voltage V(BR)DSS Breakdown voltage temperature coefficient Values Unit Note/TestCondition - V VGS=0V,ID=10mA 15 - mV/°C ID=10mA,referencedto25°C 1.2 - 2 V VDS=VGS,ID=250µA IDSS - 0.9 0.5 - mA VDS=20V,VGS=0V,Tj=25°C VDS=20V,VGS=0V,Tj=125°C Gate-source leakage current IGSS - 10 100 nA VGS=20V,VDS=0V Drain-source on-state resistance RDS(on) - 0.82 1.1 1.1 1.5 mΩ VGS=10V,ID=20A VGS=4.5V,ID=20A Gate resistance RG - 0.7 1.2 Ω - Transconductance gfs 80 160 - S |VDS|≥2|ID|RDS(on)max,ID=20A Unit Note/TestCondition Min. Typ. Max. 25 - dV(BR)DSS/dTj - Gate threshold voltage VGS(th) Zero gate voltage drain current Table5Dynamiccharacteristics Parameter Symbol Values Min. Typ. Max. Ciss - 2500 3400 pF VGS=0V,VDS=12V,f=1MHz Output capacitance Coss - 1200 1600 pF VGS=0V,VDS=12V,f=1MHz Reverse transfer capacitance Crss - 92 - pF VGS=0V,VDS=12V,f=1MHz Turn-on delay time td(on) - 5 - ns VDD=12V,VGS=10V,ID=20A, RG,ext=1.6Ω Rise time tr - 4 - ns VDD=12V,VGS=10V,ID=20A, RG,ext=1.6Ω Turn-off delay time td(off) - 26 - ns VDD=12V,VGS=10V,ID=20A, RG,ext=1.6Ω Fall time tf - 3 - ns VDD=12V,VGS=10V,ID=20A, RG,ext=1.6Ω Input capacitance 1) 1) Defined by design. Not subject to production test. Final Data Sheet 4 Rev.2.0,2019-02-04 OptiMOSTM5Power-Transistor,25V BSZ011NE2LS5I Table6Gatechargecharacteristics1) Parameter Symbol Gate to source charge Values Unit Note/TestCondition - nC VDD=12V,ID=20A,VGS=0to4.5V 3.5 - nC VDD=12V,ID=20A,VGS=0to4.5V - 3.5 - nC VDD=12V,ID=20A,VGS=0to4.5V Qsw - 5.7 - nC VDD=12V,ID=20A,VGS=0to4.5V Gate charge total Qg - 17 23 nC VDD=12V,ID=20A,VGS=0to4.5V Gate plateau voltage Vplateau - 2.3 - V VDD=12V,ID=20A,VGS=0to4.5V Gate charge total Qg - 37 50 nC VDD=12V,ID=20A,VGS=0to10V Gate charge total, sync. FET Qg(sync) - 16 - nC VDS=0.1V,VGS=0to4.5V Qoss - 29 38 nC VDD=12V,VGS=0V Unit Note/TestCondition Min. Typ. Max. Qgs - 5.6 Gate charge at threshold Qg(th) - Gate to drain charge Qgd Switching charge 2) 2) 2) Output charge Table7Reversediode Parameter Symbol Diode continuous forward current Values Min. Typ. Max. IS - - 40 A TC=25°C Diode pulse current IS,pulse - - 160 A TC=25°C Diode forward voltage VSD - 0.50 0.65 V VGS=0V,IF=11A,Tj=25°C Reverse recovery time trr - 19 - ns VR=20V,IF=20A,diF/dt=400A/µs Reverse recovery charge Qrr - 20 - nC VR=20V,IF=20A,diF/dt=400A/µs 1) 2) See ″Gate charge waveforms″ for parameter definition Defined by design. Not subject to production test. Final Data Sheet 5 Rev.2.0,2019-02-04 OptiMOSTM5Power-Transistor,25V BSZ011NE2LS5I 4Electricalcharacteristicsdiagrams Diagram1:Powerdissipation Diagram2:Draincurrent 70 250 package limit silicon limit 60 200 150 40 ID[A] Ptot[W] 50 30 100 20 50 10 0 0 20 40 60 80 100 120 140 0 160 0 20 40 60 TC[°C] 80 100 120 140 160 TC[°C] Ptot=f(TC) ID=f(TC);VGS≥10V Diagram3:Safeoperatingarea Diagram4:Max.transientthermalimpedance 3 101 10 single pulse 0.01 0.02 0.05 0.1 0.2 0.5 1 µs 102 10 µs 10 ms 100 µs DC 100 ZthJC[K/W] ID[A] 101 1 ms 100 10-1 10-1 10-2 10-1 100 101 102 10-2 10-5 10-4 VDS[V] 10-2 10-1 100 tp[s] ID=f(VDS);TC=25°C;D=0;parameter:tp Final Data Sheet 10-3 ZthJC=f(tp);parameter:D=tp/T 6 Rev.2.0,2019-02-04 OptiMOSTM5Power-Transistor,25V BSZ011NE2LS5I Diagram5:Typ.outputcharacteristics 160 140 Diagram6:Typ.drain-sourceonresistance 2.5 2.8 V 10 V 4.5 V 3V 2.0 3V 1.5 3.3 V 120 ID[A] 3.3 V 80 2.5 V 60 RDS(on)[mΩ] 100 4.5 V 1.0 10 V 40 0.5 20 0 0.0 0.5 1.0 1.5 2.0 2.5 0.0 3.0 0 10 20 VDS[V] 30 40 ID[A] ID=f(VDS),Tj=25°C;parameter:VGS RDS(on)=f(ID),Tj=25°C;parameter:VGS Diagram7:Typ.transfercharacteristics Diagram8:Typ.drain-sourceonresistance 160 2.5 140 2.0 120 RDS(on)[mΩ] ID[A] 100 80 60 1.5 150 °C 1.0 25 °C 40 0.5 20 150 °C 25 °C 0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 VGS[V] 0 2 4 6 8 10 VGS[V] ID=f(VGS),|VDS|>2|ID|RDS(on)max;parameter:Tj Final Data Sheet 0.0 RDS(on)=f(VGS),ID=20A;parameter:Tj 7 Rev.2.0,2019-02-04 OptiMOSTM5Power-Transistor,25V BSZ011NE2LS5I Diagram10:Typ.gatethresholdvoltage 1.6 2.00 1.4 1.75 1.2 1.50 1.0 1.25 VGS(th)[V] RDS(on)(normalizedto25°C) Diagram9:Normalizeddrain-sourceonresistance 0.8 1.00 0.6 0.75 0.4 0.50 0.2 0.25 0.0 -80 -40 0 40 80 120 0.00 -80 160 -40 0 40 Tj[°C] 80 120 160 Tj[°C] RDS(on)=f(Tj),ID=20A,VGS=10V VGS(th)=f(Tj),VGS=VDS,ID=10mA Diagram11:Typ.capacitances Diagram12:Forwardcharacteristicsofreversediode 4 103 10 -55°C, typ 25°C, typ 100°C, typ 150°C, typ Ciss 103 102 IF[A] C[pF] Coss 102 101 Crss 101 0 5 10 15 20 25 100 0.0 0.2 VDS[V] 0.6 0.8 1.0 VSD[V] C=f(VDS);VGS=0V;f=1MHz Final Data Sheet 0.4 IF=f(VSD);parameter:Tj 8 Rev.2.0,2019-02-04 OptiMOSTM5Power-Transistor,25V BSZ011NE2LS5I Diagram13:Avalanchecharacteristics Diagram14:Typ.gatecharge 2 10 10 5V 12 V 20 V 8 101 25 °C VGS[V] IAV[A] 6 100 °C 4 125 °C 0 10 2 10-1 100 101 102 103 tAV[µs] 0 0 5 10 15 20 25 30 35 40 Qgate[nC] IAS=f(tAV);RGS=25Ω;parameter:Tj,start VGS=f(Qgate),ID=20Apulsed,Tj=25°C;parameter:VDD Diagram15:Typ.drain-sourceleakagecurrent Diagram Gate charge waveforms -3 10 125 °C IDSS[A] 10-4 100 °C 75 °C 10-5 25 °C -6 10 0 5 10 15 20 VDS[V] IDSS=f(VDS),VGS=0V;parameter:Tj Final Data Sheet 9 Rev.2.0,2019-02-04 OptiMOSTM5Power-Transistor,25V BSZ011NE2LS5I 5PackageOutlines Figure1OutlinePG-TSDSON-8FL,dimensionsinmm/inches Final Data Sheet 10 Rev.2.0,2019-02-04 OptiMOSTM5Power-Transistor,25V BSZ011NE2LS5I RevisionHistory BSZ011NE2LS5I Revision:2019-02-04,Rev.2.0 Previous Revision Revision Date Subjects (major changes since last revision) 2.0 2019-02-04 Release of final version Trademarks Allreferencedproductorservicenamesandtrademarksarethepropertyoftheirrespectiveowners. WeListentoYourComments Anyinformationwithinthisdocumentthatyoufeeliswrong,unclearormissingatall?Yourfeedbackwillhelpustocontinuously improvethequalityofthisdocument.Pleasesendyourproposal(includingareferencetothisdocument)to: erratum@infineon.com Publishedby InfineonTechnologiesAG 81726München,Germany ©2018InfineonTechnologiesAG AllRightsReserved. LegalDisclaimer Theinformationgiveninthisdocumentshallinnoeventberegardedasaguaranteeofconditionsorcharacteristics (“Beschaffenheitsgarantie”). Withrespecttoanyexamples,hintsoranytypicalvaluesstatedhereinand/oranyinformationregardingtheapplicationofthe product,InfineonTechnologiesherebydisclaimsanyandallwarrantiesandliabilitiesofanykind,includingwithoutlimitation warrantiesofnon-infringementofintellectualpropertyrightsofanythirdparty. Inaddition,anyinformationgiveninthisdocumentissubjecttocustomer’scompliancewithitsobligationsstatedinthis documentandanyapplicablelegalrequirements,normsandstandardsconcerningcustomer’sproductsandanyuseofthe productofInfineonTechnologiesincustomer’sapplications. Thedatacontainedinthisdocumentisexclusivelyintendedfortechnicallytrainedstaff.Itistheresponsibilityofcustomer’s technicaldepartmentstoevaluatethesuitabilityoftheproductfortheintendedapplicationandthecompletenessoftheproduct informationgiveninthisdocumentwithrespecttosuchapplication. Information Forfurtherinformationontechnology,deliverytermsandconditionsandpricespleasecontactyournearestInfineon TechnologiesOffice(www.infineon.com). Warnings Duetotechnicalrequirements,componentsmaycontaindangeroussubstances.Forinformationonthetypesinquestion, pleasecontactthenearestInfineonTechnologiesOffice. TheInfineonTechnologiescomponentdescribedinthisDataSheetmaybeusedinlife-supportdevicesorsystemsand/or automotive,aviationandaerospaceapplicationsorsystemsonlywiththeexpresswrittenapprovalofInfineonTechnologies,ifa failureofsuchcomponentscanreasonablybeexpectedtocausethefailureofthatlife-support,automotive,aviationand aerospacedeviceorsystemortoaffectthesafetyoreffectivenessofthatdeviceorsystem.Lifesupportdevicesorsystemsare intendedtobeimplantedinthehumanbodyortosupportand/ormaintainandsustainand/orprotecthumanlife.Iftheyfail,itis reasonabletoassumethatthehealthoftheuserorotherpersonsmaybeendangered. Final Data Sheet 11 Rev.2.0,2019-02-04