BSZ011NE2LS5IATMA1

BSZ011NE2LS5I MOSFET OptiMOSTM5Power-Transistor,25V TSDSON-8FL (enlarged source interconnection) Features •Optimizedforhighperformancebuckconverters •MonolithicintegratedSchottky-likediode •Verylowon-resistanceRDS(on)@VGS=4.5V •100%avalanchetested •N-channel •Pb-freeleadplating;RoHScompliant •Halogen-freeaccordingtoIEC61249-2-21 Productvalidation FullyqualifiedaccordingtoJEDECforIndustrialApplications Table1KeyPerformanceParameters S1 8D S2 7D Parameter Value Unit S3 6D VDS 25 V G4 5D RDS(on),max 1.1 mΩ ID 202 A Qoss 29 nC QG(0V..4.5V) 17 nC Type/OrderingCode Package Marking RelatedLinks BSZ011NE2LS5I PG-TSDSON-8 FL 11NE25I - Final Data Sheet 1 Rev.2.1,2020-10-23 OptiMOSTM5Power-Transistor,25V BSZ011NE2LS5I TableofContents Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Thermal characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 Electrical characteristics diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 Package Outlines . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 Revision History . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 Trademarks . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 Disclaimer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 Final Data Sheet 2 Rev.2.1,2020-10-23 OptiMOSTM5Power-Transistor,25V BSZ011NE2LS5I 1Maximumratings atTA=25°C,unlessotherwisespecified Table2Maximumratings Parameter Symbol Values Unit Note/TestCondition 202 128 173 109 35 A VGS=10V,TC=25°C VGS=10V,TC=100°C VGS=4.5V,TC=25°C VGS=4.5V,TC=100°C VGS=10V,TA=25°C, RTHJA=60°C/W2) - 808 A TC=25°C - - 119 mJ ID=20A,RGS=25Ω VGS -16 - 16 V - Power dissipation Ptot - - 69 2.1 W TC=25°C TA=25°C,RTHJA=60°C/W2) Operating and storage temperature Tj,Tstg -55 - 150 °C IEC climatic category; DIN IEC 68-1: 55/150/56 Unit Note/TestCondition Min. Typ. Max. ID - - ID,pulse - Avalanche energy, single pulse EAS Gate source voltage Continuous drain current1) Pulsed drain current3) 4) 2Thermalcharacteristics Table3Thermalcharacteristics Parameter Symbol Thermal resistance, junction - case, bottom Values Min. Typ. Max. RthJC - - 1.8 °C/W - Thermal resistance, junction - case, top RthJC - - 20 °C/W - Device on PCB, 6 cm² cooling area RthJA - - 60 °C/W - 1) Rating refers to the product only with datasheet specified absolute maximum values, maintaining case temperature at 25°C. For higher case temperature please refer to Diagram 2. De-rating will be required based on the actual environmental conditions. 2) Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm2 (one layer, 70 µm thick) copper area for drain connection. PCB is vertical in still air. 3) See Diagram 3 for more detailed information 4) See Diagram 13 for more detailed information Final Data Sheet 3 Rev.2.1,2020-10-23 OptiMOSTM5Power-Transistor,25V BSZ011NE2LS5I 3Electricalcharacteristics atTj=25°C,unlessotherwisespecified Table4Staticcharacteristics Parameter Symbol Drain-source breakdown voltage V(BR)DSS Breakdown voltage temperature coefficient Values Unit Note/TestCondition - V VGS=0V,ID=10mA 15 - mV/°C ID=10mA,referencedto25°C 1.2 - 2 V VDS=VGS,ID=250µA IDSS - 0.9 0.5 - mA VDS=20V,VGS=0V,Tj=25°C VDS=20V,VGS=0V,Tj=125°C Gate-source leakage current IGSS - 10 100 nA VGS=20V,VDS=0V Drain-source on-state resistance RDS(on) - 0.82 1.1 1.1 1.5 mΩ VGS=10V,ID=20A VGS=4.5V,ID=20A Gate resistance RG - 0.7 1.2 Ω - Transconductance gfs 80 160 - S |VDS|≥2|ID|RDS(on)max,ID=20A Unit Note/TestCondition Min. Typ. Max. 25 - dV(BR)DSS/dTj - Gate threshold voltage VGS(th) Zero gate voltage drain current Table5Dynamiccharacteristics Parameter Symbol Values Min. Typ. Max. Ciss - 2500 3400 pF VGS=0V,VDS=12V,f=1MHz Output capacitance Coss - 1200 1600 pF VGS=0V,VDS=12V,f=1MHz Reverse transfer capacitance Crss - 92 - pF VGS=0V,VDS=12V,f=1MHz Turn-on delay time td(on) - 5 - ns VDD=12V,VGS=10V,ID=20A, RG,ext=1.6Ω Rise time tr - 4 - ns VDD=12V,VGS=10V,ID=20A, RG,ext=1.6Ω Turn-off delay time td(off) - 26 - ns VDD=12V,VGS=10V,ID=20A, RG,ext=1.6Ω Fall time tf - 3 - ns VDD=12V,VGS=10V,ID=20A, RG,ext=1.6Ω Input capacitance1) 1) 1) Defined by design. Not subject to production test. Final Data Sheet 4 Rev.2.1,2020-10-23 OptiMOSTM5Power-Transistor,25V BSZ011NE2LS5I Table6Gatechargecharacteristics1) Parameter Symbol Gate to source charge Values Unit Note/TestCondition - nC VDD=12V,ID=20A,VGS=0to4.5V 3.5 - nC VDD=12V,ID=20A,VGS=0to4.5V - 3.5 - nC VDD=12V,ID=20A,VGS=0to4.5V Qsw - 5.7 - nC VDD=12V,ID=20A,VGS=0to4.5V Gate charge total Qg - 17 23 nC VDD=12V,ID=20A,VGS=0to4.5V Gate plateau voltage Vplateau - 2.3 - V VDD=12V,ID=20A,VGS=0to4.5V Gate charge total Qg - 37 50 nC VDD=12V,ID=20A,VGS=0to10V Gate charge total, sync. FET Qg(sync) - 16 - nC VDS=0.1V,VGS=0to4.5V Qoss - 29 38 nC VDD=12V,VGS=0V Unit Note/TestCondition Min. Typ. Max. Qgs - 5.6 Gate charge at threshold Qg(th) - Gate to drain charge Qgd Switching charge 2) 2) 2) Output charge Table7Reversediode Parameter Symbol Diode continuous forward current Values Min. Typ. Max. IS - - 107 A TC=25°C Diode pulse current IS,pulse - - 808 A TC=25°C Diode forward voltage VSD - 0.50 0.65 V VGS=0V,IF=11A,Tj=25°C Reverse recovery time trr - 19 - ns VR=20V,IF=20A,diF/dt=400A/µs Reverse recovery charge Qrr - 20 - nC VR=20V,IF=20A,diF/dt=400A/µs 1) 2) See ″Gate charge waveforms″ for parameter definition Defined by design. Not subject to production test. Final Data Sheet 5 Rev.2.1,2020-10-23 OptiMOSTM5Power-Transistor,25V BSZ011NE2LS5I 4Electricalcharacteristicsdiagrams Diagram1:Powerdissipation Diagram2:Draincurrent 70 250 60 200 150 40 ID[A] Ptot[W] 50 30 100 20 50 10 0 0 20 40 60 80 100 120 140 0 160 0 20 40 60 TC[°C] 80 100 120 140 160 TC[°C] Ptot=f(TC) ID=f(TC);VGS≥10V Diagram3:Safeoperatingarea Diagram4:Max.transientthermalimpedance 3 101 10 single pulse 0.01 0.02 0.05 0.1 0.2 0.5 1 µs 10 µs 102 100 µs 100 ZthJC[K/W] ID[A] 101 1 ms DC 10 ms 100 10-1 10-1 10-2 10-1 100 101 102 10-2 10-5 10-4 VDS[V] 10-2 10-1 100 tp[s] ID=f(VDS);TC=25°C;D=0;parameter:tp Final Data Sheet 10-3 ZthJC=f(tp);parameter:D=tp/T 6 Rev.2.1,2020-10-23 OptiMOSTM5Power-Transistor,25V BSZ011NE2LS5I Diagram5:Typ.outputcharacteristics 160 140 Diagram6:Typ.drain-sourceonresistance 2.5 2.8 V 10 V 4.5 V 3V 2.0 3V 1.5 3.3 V 120 ID[A] 3.3 V 80 2.5 V 60 RDS(on)[mΩ] 100 4.5 V 1.0 10 V 40 0.5 20 0 0.0 0.5 1.0 1.5 2.0 2.5 0.0 3.0 0 10 20 VDS[V] 30 40 ID[A] ID=f(VDS),Tj=25°C;parameter:VGS RDS(on)=f(ID),Tj=25°C;parameter:VGS Diagram7:Typ.transfercharacteristics Diagram8:Typ.drain-sourceonresistance 160 2.5 140 2.0 120 RDS(on)[mΩ] ID[A] 100 80 60 1.5 150 °C 1.0 25 °C 40 0.5 20 150 °C 25 °C 0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 VGS[V] 0 2 4 6 8 10 VGS[V] ID=f(VGS),|VDS|>2|ID|RDS(on)max;parameter:Tj Final Data Sheet 0.0 RDS(on)=f(VGS),ID=20A;parameter:Tj 7 Rev.2.1,2020-10-23 OptiMOSTM5Power-Transistor,25V BSZ011NE2LS5I Diagram10:Typ.gatethresholdvoltage 1.6 2.00 1.4 1.75 1.2 1.50 1.0 1.25 VGS(th)[V] RDS(on)(normalizedto25°C) Diagram9:Normalizeddrain-sourceonresistance 0.8 1.00 0.6 0.75 0.4 0.50 0.2 0.25 0.0 -80 -40 0 40 80 120 0.00 -80 160 -40 0 40 Tj[°C] 80 120 160 Tj[°C] RDS(on)=f(Tj),ID=20A,VGS=10V VGS(th)=f(Tj),VGS=VDS,ID=10mA Diagram11:Typ.capacitances Diagram12:Forwardcharacteristicsofreversediode 4 103 10 -55°C, typ 25°C, typ 100°C, typ 150°C, typ Ciss 103 102 IF[A] C[pF] Coss 102 101 Crss 101 0 5 10 15 20 25 100 0.0 0.2 VDS[V] 0.6 0.8 1.0 VSD[V] C=f(VDS);VGS=0V;f=1MHz Final Data Sheet 0.4 IF=f(VSD);parameter:Tj 8 Rev.2.1,2020-10-23 OptiMOSTM5Power-Transistor,25V BSZ011NE2LS5I Diagram13:Avalanchecharacteristics Diagram14:Typ.gatecharge 2 10 10 5V 12 V 20 V 8 101 25 °C VGS[V] IAV[A] 6 100 °C 4 125 °C 0 10 2 10-1 100 101 102 103 tAV[µs] 0 0 5 10 15 20 25 30 35 40 Qgate[nC] IAS=f(tAV);RGS=25Ω;parameter:Tj,start VGS=f(Qgate),ID=20Apulsed,Tj=25°C;parameter:VDD Diagram15:Typ.drain-sourceleakagecurrent Diagram Gate charge waveforms -3 10 125 °C IDSS[A] 10-4 100 °C 75 °C 10-5 25 °C -6 10 0 5 10 15 20 VDS[V] IDSS=f(VDS),VGS=0V;parameter:Tj Final Data Sheet 9 Rev.2.1,2020-10-23 OptiMOSTM5Power-Transistor,25V BSZ011NE2LS5I 5PackageOutlines TSDSON-8-25/-26 j DIM A b b1 b2 D=D1 D2 D3 D4 E E4 E6 e N L L1 L2 aaa F1 F2 F3 F4 F5 F6 F7 F8 F9 MILLIMETERS MIN 0.90 0.24 0.10 0.24 3.20 2.19 1.54 0.21 3.20 2.01 0.10 0.30 0.40 0.50 MAX 1.10 0.44 0.30 0.44 3.40 2.39 1.74 0.41 3.40 2.21 0.30 0.65 (BSC) 8 0.51 0.70 0.70 0.25 3.90 2.29 0.31 0.34 0.80 1.00 2.51 1.64 0.50 m INCHES MIN 0.035 0.009 0.004 0.009 0.126 0.086 0.061 0.008 0.126 0.079 0.004 0.012 0.016 0.020 MAX 0.043 0.017 0.012 0.017 0.134 0.094 0.069 0.016 0.134 0.087 0.012 0.026 (BSC) 8 0.020 0.028 0.028 0.010 0.154 0.090 0.012 0.013 0.031 0.039 0.099 0.065 0.020 DOCUMENT NO. Z8B00158553 SCALE 0 2.5 0 2.5 5mm EUROPEAN PROJECTION ISSUE DATE 27-12-2010 REVISION 02 Figure1OutlinePG-TSDSON-8FL,dimensionsinmm/inches Final Data Sheet 10 Rev.2.1,2020-10-23 OptiMOSTM5Power-Transistor,25V BSZ011NE2LS5I RevisionHistory BSZ011NE2LS5I Revision:2020-10-23,Rev.2.1 Previous Revision Revision Date Subjects (major changes since last revision) 2.0 2019-02-04 Release of final version 2.1 2020-10-23 Update current rating Trademarks Allreferencedproductorservicenamesandtrademarksarethepropertyoftheirrespectiveowners. WeListentoYourComments Anyinformationwithinthisdocumentthatyoufeeliswrong,unclearormissingatall?Yourfeedbackwillhelpustocontinuously improvethequalityofthisdocument.Pleasesendyourproposal(includingareferencetothisdocument)to: erratum@infineon.com Publishedby InfineonTechnologiesAG 81726München,Germany ©2020InfineonTechnologiesAG AllRightsReserved. LegalDisclaimer Theinformationgiveninthisdocumentshallinnoeventberegardedasaguaranteeofconditionsorcharacteristics (“Beschaffenheitsgarantie”). Withrespecttoanyexamples,hintsoranytypicalvaluesstatedhereinand/oranyinformationregardingtheapplicationofthe product,InfineonTechnologiesherebydisclaimsanyandallwarrantiesandliabilitiesofanykind,includingwithoutlimitation warrantiesofnon-infringementofintellectualpropertyrightsofanythirdparty. Inaddition,anyinformationgiveninthisdocumentissubjecttocustomer’scompliancewithitsobligationsstatedinthis documentandanyapplicablelegalrequirements,normsandstandardsconcerningcustomer’sproductsandanyuseofthe productofInfineonTechnologiesincustomer’sapplications. Thedatacontainedinthisdocumentisexclusivelyintendedfortechnicallytrainedstaff.Itistheresponsibilityofcustomer’s technicaldepartmentstoevaluatethesuitabilityoftheproductfortheintendedapplicationandthecompletenessoftheproduct informationgiveninthisdocumentwithrespecttosuchapplication. Information Forfurtherinformationontechnology,deliverytermsandconditionsandpricespleasecontactyournearestInfineon TechnologiesOffice(www.infineon.com). Warnings Duetotechnicalrequirements,componentsmaycontaindangeroussubstances.Forinformationonthetypesinquestion, pleasecontactthenearestInfineonTechnologiesOffice. TheInfineonTechnologiescomponentdescribedinthisDataSheetmaybeusedinlife-supportdevicesorsystemsand/or automotive,aviationandaerospaceapplicationsorsystemsonlywiththeexpresswrittenapprovalofInfineonTechnologies,ifa failureofsuchcomponentscanreasonablybeexpectedtocausethefailureofthatlife-support,automotive,aviationand aerospacedeviceorsystemortoaffectthesafetyoreffectivenessofthatdeviceorsystem.Lifesupportdevicesorsystemsare intendedtobeimplantedinthehumanbodyortosupportand/ormaintainandsustainand/orprotecthumanlife.Iftheyfail,itis reasonabletoassumethatthehealthoftheuserorotherpersonsmaybeendangered. Final Data Sheet 11 Rev.2.1,2020-10-23