BSZ0909NS
OptiMOS™ Power-MOSFET
Product Summary
Features
• Optimized for 5V driver application (Notebook, VGA, POL)
VDS
• Low FOMSW for High Frequency SMPS
RDS(on),max
• 100% avalanche tested
34
V
VGS=10 V
12
mW
VGS=4.5 V
15
ID
• Improved switching behaviour
36
A
PG-TSDSON-8
• N-channel
• Very low on-resistance R DS(on) @ V GS=4.5 V
• Excellent gate charge x R DS(on) product (FOM)
• Qualified according to JEDEC1) for target applications
• Superior thermal resistance
• Pb-free plating; RoHS compliant
• Halogen-free according to IEC61249-2-21
Type
Package
Marking
BSZ0909NS
PG-TSDSON-8
0909NS
Maximum ratings, at T j=25 °C, unless otherwise specified
Parameter
Symbol Conditions
Continuous drain current
ID
Value
V GS=10 V, T C=25 °C
36
V GS=10 V, T C=100 °C
23
V GS=4.5 V, T C=25 °C
32
V GS=4.5 V,
T C=100 °C
21
V GS=4.5 V, T A=25 °C,
R thJA=60 K/W 2)
A
9
Pulsed drain current3)
I D,pulse
T C=25 °C
144
Avalanche current, single pulse4)
I AS
T C=25 °C
20
Avalanche energy, single pulse
E AS
I D=20 A, R GS=25 W
9
Gate source voltage
V GS
1)
Unit
±20
mJ
V
J-STD20 and JESD22
Rev. 2.0
page 1
2013-05-14
BSZ0909NS
Maximum ratings, at T j=25 °C, unless otherwise specified
Parameter
Symbol Conditions
Power dissipation
P tot
Value
T C=25 °C
25
T A=25 °C,
T j, T stg
-55 ... 150
IEC climatic category; DIN IEC 68-1
Parameter
W
2.1
R thJA=60 K/W 2)
Operating and storage temperature
Unit
°C
55/150/56
Values
Symbol Conditions
Unit
min.
typ.
max.
-
-
5.1
-
-
60
Thermal characteristics
Thermal resistance, junction - case
R thJC
Device on PCB
R thJA
6 cm2 cooling area2)
K/W
Electrical characteristics, at T j=25 °C, unless otherwise specified
Static characteristics
Drain-source breakdown voltage
V (BR)DSS V GS=0 V, I D=1 mA
34
-
-
Gate threshold voltage
V GS(th)
V DS=V GS, I D=250 µA
1.2
-
2
Zero gate voltage drain current
I DSS
V DS=34 V, V GS=0 V,
T j=25 °C
-
0.1
1
V DS=34 V, V GS=0 V,
T j=125 °C
-
10
100
V
µA
Gate-source leakage current
I GSS
V GS=16 V, V DS=0 V
-
10
100
nA
Drain-source on-state resistance
R DS(on)
V GS=4.5 V, I D=12 A
-
12.0
15
mW
V GS=10 V, I D=20 A
-
10.0
12.0
1.5
3.0
6.0
W
24
47
-
S
Gate resistance
RG
Transconductance
g fs
|V DS|>2|I D|R DS(on)max,
I D=30 A
2)
Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm2 (one layer, 70 µm thick) copper area for drain
connection. PCB is vertical in still air.
3)
See figure 3 for more detailed information
Rev. 2.0
page 2
2013-05-14
BSZ0909NS
Parameter
Values
Symbol Conditions
Unit
min.
typ.
max.
-
975
1310
-
340
450
Dynamic characteristics
Input capacitance
C iss
Output capacitance
C oss
Reverse transfer capacitance
Crss
-
21
-
Turn-on delay time
t d(on)
-
4.5
-
Rise time
tr
-
2.2
-
Turn-off delay time
t d(off)
-
16
-
Fall time
tf
-
2.0
-
Gate to source charge
Q gs
-
3.3
4.4
Gate charge at threshold
Q g(th)
-
1.5
-
Gate to drain charge
Q gd
-
1.6
2.1
Switching charge
Q sw
-
3.2
-
Gate charge total
Qg
-
6.1
8.1
Gate plateau voltage
V plateau
-
3.4
-
Gate charge total
Qg
V DD=15 V, I D=30 A,
V GS=0 to 10 V
-
13
17
Gate charge total, sync. FET
Q g(sync)
V DS=0.1 V,
V GS=0 to 4.5 V
-
5.3
-
Output charge
Q oss
V DD=15 V, V GS=0 V
-
8.9
12
-
-
23
-
-
148
V GS=0 V, V DS=15 V,
f =1 MHz
V DD=15 V, V GS=10 V,
I D=30 A, R G,ext=1.6 W
pF
ns
Gate Charge Characteristics5)
V DD=15 V, I D=30 A,
V GS=0 to 4.5 V
nC
V
nC
Reverse Diode
Diode continuous forward current
IS
Diode pulse current
I S,pulse
Diode forward voltage
V SD
V GS=0 V, I F=20 A,
T j=25 °C
-
0.9
-
Reverse recovery charge
Q rr
V R=15 V, I F=I S,
di F/dt =400 A/µs
-
-
10
4)
5)
A
T C=25 °C
V
nC
See figure 13 for more detailed information
See figure 16 for gate charge parameter definition
Rev. 2.0
page 3
2013-05-14
BSZ0909NS
1 Power dissipation
2 Drain current
P tot=f(T C)
I D=f(T C)
parameter: V GS
30
40
35
24
30
10V
25
ID [A]
Ptot [W]
18
12
4.5V
20
15
10
6
5
0
0
0
40
80
120
160
0
40
80
TC [°C]
120
160
TC [°C]
3 Safe operating area
4 Max. transient thermal impedance
I D=f(V DS); T C=25 °C; D =0
Z thJC=f(t p)
parameter: t p
parameter: D =t p/T
103
10
limited by on-state
resistance
0.5
1 µs
102
10 µs
0.2
1
0.1
ZthJC [K/W]
ID [A]
100 µs
1 ms
101
DC
0.05
0.02
0.01
0.1
single pulse
100
10-1
0.01
10-1
100
101
102
VDS [V]
Rev. 2.0
0
0
0
0
0
0
1
10-6
10-5
10-4
10-3
10-2
10-1
100
tp [s]
page 4
2013-05-14
BSZ0909NS
5 Typ. output characteristics
6 Typ. drain-source on resistance
I D=f(V DS); T j=25 °C
R DS(on)=f(I D); T j=25 °C
parameter: V GS
parameter: V GS
120
30
10 V
5V
4.5 V
100
24
3V
3.2 V
RDS(on) [mW]
80
ID [A]
4V
60
40
18
3.5 V
4V
4.5 V
12
5V
6V
3.5 V
10 V
3.2 V
6
20
3V
2.8 V
0
0
0
1
2
3
0
10
20
VDS [V]
30
40
50
ID [A]
7 Typ. transfer characteristics
8 Typ. forward transconductance
I D=f(V GS); |V DS|>2|I D|R DS(on)max
g fs=f(I D); T j=25 °C
120
120
100
100
80
80
25 °C
gfs [S]
ID [A]
parameter: T j
60
150 °C
60
40
40
20
20
0
0
0
1
2
3
4
5
VGS [V]
Rev. 2.0
0
40
80
120
ID [A]
page 5
2013-05-14
BSZ0909NS
9 Drain-source on-state resistance
10 Typ. gate threshold voltage
R DS(on)=f(T j); I D=20 A; V GS=10 V
V GS(th)=f(T j); V GS=V DS; I D=250 µA
24
2.5
20
2
1.5
VGS(th) [V]
RDS(on) [mW]
16
12
typ
1
8
0.5
4
0
0
-60
-20
20
60
100
140
180
-60
-20
20
Tj [°C]
60
100
140
180
Tj [°C]
11 Typ. capacitances
12 Forward characteristics of reverse diode
C =f(V DS); V GS=0 V; f =1 MHz
I F=f(V SD)
parameter: T j
104
1000
Ciss
103
100
IF [A]
C [pF]
Coss
102
150 °C
25 °C
Crss
10
101
100
1
0
10
20
30
0.0
VDS [V]
Rev. 2.0
0.5
1.0
1.5
2.0
VSD [V]
page 6
2013-05-14
BSZ0909NS
13 Avalanche characteristics
14 Typ. gate charge
I AS=f(t AV); R GS=25 W
V GS=f(Q gate); I D=30 A pulsed
parameter: T j(start)
parameter: V DD
100
12
15 V
10
6V
24 V
VGS [V]
IAV [A]
8
10
25 °C
6
100 °C
125 °C
4
2
1
1
10
100
0
1000
0
5
tAV [µs]
10
15
Qgate [nC]
15 Drain-source breakdown voltage
16 Gate charge waveforms
V BR(DSS)=f(T j); I D=1 mA
38
V GS
36
Qg
34
VBR(DSS) [V]
32
30
28
V gs(th)
26
24
Q g(th)
22
Q sw
Q gs
20
-60
-20
20
60
100
140
Q gate
Q gd
180
Tj [°C]
Rev. 2.0
page 7
2013-05-14
BSZ0909NS
Package Outline
Rev. 2.0
PG-TSDSON-8
page 8
2013-05-14
BSZ0909NS
Published by
Infineon Technologies AG
81726 Munich, Germany
© 2010 Infineon Technologies AG
All Rights Reserved.
Legal Disclaimer
The information given in this document shall in no event be regarded as a guarantee of
conditions or characteristics. With respect to any examples or hints given herein, any typical
values stated herein and/or any information regarding the application of the device,
Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind,
including without limitation, warranties of non-infringement of intellectual property rights
of any third party.
Information
For further information on technology, delivery terms and conditions and prices, please
contact the nearest Infineon Technologies Office (www.infineon.com).
Warnings
Due to technical requirements, components may contain dangerous substances. For information
on the types in question, please contact the nearest Infineon Technologies Office.
Infineon Technologies components may be used in life-support devices or systems only with
the express written approval of Infineon Technologies, if a failure of such components can
reasonably be expected to cause the failure of that life-support device or system or to affect
the safety or effectiveness of that device or system. Life support devices or systems are
intended to be implanted in the human body or to support and/or maintain and sustain
and/or protect human life. If they fail, it is reasonable to assume that the health of the user
or other persons may be endangered.
Rev. 2.0
page 9
2013-05-14