Data Sheet, V1.0, January 2004
BTS 5434G
Smart High-Side Power Switch
PROFET
Four Channels, 60 mΩ
Automotive Power
N e v e r
s t o p
t h i n k i n g .
Smart High-Side Power Switch
BTS 5434G
Table of Contents
Page
Product Summary . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .3
1 Overview . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .5
1.1 Block Diagram . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .5
1.2 Terms . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .6
2 Pin Configuration . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .7
2.1 Pin Assignment BTS 5434G . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .7
2.2 Pin Definitions and Functions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .7
3 Electrical Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .9
3.1 Maximum Ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .9
4 Block Description and Electrical Characteristics . . . . . . . . . . . . . . . . . . . . . . .11
4.1 Power Stages . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .11
4.1.1 Output On-State Resistance . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
4.1.2 Input Circuit . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
4.1.3 Inductive Output Clamp . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
4.1.4 Electrical Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14
4.2 Protection Functions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .16
4.2.1 Over Load Protection . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16
4.2.2 Reverse Polarity Protection . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17
4.2.3 Over Voltage Protection . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17
4.2.4 Loss of Ground Protection . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17
4.2.5 Electrical Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 18
4.3 Diagnosis . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .19
4.3.1 ON-State Diagnosis . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20
4.3.2 OFF-State Diagnosis . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 21
4.3.3 Sense Enable Function . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 22
4.3.4 Electrical Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 23
5 Package Outlines BTS 5434G
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .25
6 Revision History . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .26
Data Sheet
2
V1.0, 2004-01-23
Smart High-Side Power Switch
PROFET
BTS 5434G
Product Summary
P-DSO-28-19
The BTS 5434G is a four channel high-side power
switch in P-DSO-28-19 package providing embedded
protective functions.
The power transistor is built by a N-channel vertical
power MOSFET with charge pump. The device is
monolithically integrated in Smart SIPMOS
technology.
Operating voltage
Vbb(on)
4.5 .. 28 V
Over voltage protection
Vbb(AZ)
RDS(ON)
41 V
3.4 A
23 A
Current limitation repetitive
IL(nom)
IL(LIM)
IL(SCr)
Standby current for whole device with load
Ibb(OFF)
5 µA
On-State resistance
Nominal load current (one channel active)
Current limitation
60 mΩ
6A
Basic Features
•
•
•
•
•
•
•
Very low standby current
3.3 V and 5 V compatible logic pins
Improved electromagnetic compatibility (EMC)
Stable behavior at under voltage
Logic ground independent from load ground
Secure load turn-off while logic ground disconnected
Optimized inverse current capability
Type
Ordering Code
Package
BTS 5434G
Q67060-S6157
P-DSO-28-19
Data Sheet
3
V1.0, 2004-01-23
Smart High-Side Power Switch
BTS 5434G
Protective Functions
•
•
•
•
•
•
•
•
•
Reverse battery protection without external components
Short circuit protection
Overload protection
Multi-step current limitation
Thermal shutdown with restart
Thermal restart at reduced current limitation
Over voltage protection without external resistor
Loss of ground protection
Electrostatic discharge protection (ESD)
Diagnostic Functions
•
•
•
•
•
•
•
Enhanced IntelliSense signal for each channel
Enable function for diagnosis pins (IS1 .. IS4)
Proportional load current sense signal by current source
High accuracy of current sense signal at wide load current range
Open load detection in ON-state by load current sense
Open load detection in OFF-state by voltage source
Feedback on over temperature and current limitation in ON-state
Applications
• µC compatible high-side power switch with diagnostic feedback for 12 V grounded
loads
• All types of resistive, inductive and capacitive loads
• Suitable for loads with high inrush currents, so as lamps
• Suitable for loads with low currents, so as LEDs
• Replaces electromechanical relays, fuses and discrete circuits
Data Sheet
4
V1.0, 2004-01-23
Smart High-Side Power Switch
BTS 5434G
Overview
1
Overview
The BTS 5434G is a four channel high-side power switch (four times 60 mΩ) in
P-DSO-28-19 package providing embedded protective functions.
The Enhanced IntelliSense pins IS1 to IS4 provide a sophisticated diagnostic feedback
signal including current sense function and open load in off state. The diagnosis signals
can be switched on and off by the sense enable pins SENA and SENB.
Integrated ground resistors as well as integrated resistors at each input pin (IN1, IN2,
IN3, IN4, SEN) reduce external components to a minimum.
The power transistor is built by a N-channel vertical power MOSFET with charge pump.
The inputs are ground referenced CMOS compatible. The device is built by two dual
channel chips, monolithically integrated in Smart SIPMOS technology.
1.1
Block Diagram
VBB
channel 1,2 (Chip A)
load current
sense
internal
power
supply
IN1
IN2
IS1
IS2
SENA
IN3
IN4
IS3
IS4
SENB
logic
gate control
&
charge pump
open load
detection
ESD
protection
clamp for
inductive load
multi step
load current
limitation
OUT1
temperature
sensor
channel 3,4 (Chip B)
control and protection circuit
equivalent to
channel 1,2
OUT4
OUT3
RGND
RGND
GNDA
Figure 1
Data Sheet
OUT2
GNDB
Block Diagram
5
V1.0, 2004-01-23
Smart High-Side Power Switch
BTS 5434G
Overview
1.2
Terms
Following figure shows all terms used in this data sheet.
Vbb
Ibb
IIN1
IIN2
V IN1
IIS1
VIN2
IIS2
V IS1
ISENA
VIS2
VSENA
IIN3
IIN4
VIN3
IIS3
VIN4
IIS4
V IS3
VIS4
ISENB
V SENB
VBB
IN1
IN2
IS1
OUT1
BTS 5434G
OUT2
IS2
I L1
VDS1
I L2
VOUT1
V DS2
V OUT2
SENA
Chip A
IN3
IN4
OUT3
IS3
OUT4
IS4
I L3
VDS3
I L4
VOUT3
V DS4
V OUT4
SENB
Chip B
GNDA
GNDB
IGND
Terms4ch.emf
Figure 2
Data Sheet
Terms
6
V1.0, 2004-01-23
Smart High-Side Power Switch
BTS 5434G
Pin Configuration
2
Pin Configuration
2.1
Pin Assignment BTS 5434G
(top view)
Figure 3
VBB
1
28
VBB
GNDA
2
27
OUT1
IN1
3
26
OUT1
IS1
4
25
OUT1
IS2
5
24
OUT2
IN2
6
23
OUT2
SENA
7
22
OUT2
GNDB
8
21
OUT3
IN3
9
20
OUT3
IS3
10
19
OUT3
IS4
11
18
OUT4
IN4
12
17
OUT4
SENB
13
16
OUT4
VBB
14
15
VBB
Pin Configuration P-DSO-28-19
2.2
Pin Definitions and Functions
Pin
Symbol
I/O
OD
Function
3
IN1
I
Input signal for channel 1
6
IN2
I
Input signal for channel 2
9
IN3
I
Input signal for channel 3
12
IN4
I
Input signal for channel 4
4
IS1
O
Diagnosis output signal channel 1
5
IS2
O
Diagnosis output signal channel 2
10
IS3
O
Diagnosis output signal channel 3
11
IS4
O
Diagnosis output signal channel 4
Data Sheet
7
V1.0, 2004-01-23
Smart High-Side Power Switch
BTS 5434G
Pin Configuration
Pin
Symbol
I/O
OD
Function
7
SENA
I
Sense Enable input for channel 1&2
13
SENB
I
Sense Enable input for channel 3&4
25, 26, 27 OUT1
O
Protected high-side power output channel 1
22, 23, 24 OUT2
O
Protected high-side power output channel 2
19, 20, 21 OUT3
O
Protected high-side power output channel 3
16, 17, 18 OUT4
O
Protected high-side power output channel 4
2
GNDA
-
Ground connection chip A
8
GNDB
-
Ground connection chip B
1, 14, 15,
28
VBB
-
Positive power supply for logic supply as well as
output power supply
Data Sheet
8
V1.0, 2004-01-23
Smart High-Side Power Switch
BTS 5434G
Electrical Characteristics
3
Electrical Characteristics
3.1
Maximum Ratings
Stresses above the ones listed here may affect device reliability or may cause permanent
damage to the device.
Unless otherwise specified:
Tj = 25 °C
Pos.
Parameter
Symbol
Limit Values
min.
Unit Test
Conditions
max.
Supply Voltage
-16
28
V
Supply voltage for full short
Vbb(SC)
circuit protection (single pulse)
(Tj(0) = -40°C .. 150°C)
0
28
V
VDS
Supply Voltage for Load Dump Vbb(LD)
-
52
V
41
V
3.1.1
Supply voltage
3.1.2
3.1.3
3.1.4
Vbb
Voltage at power transistor
protection
L = 8 µH,
R = 0.2 Ω 1)
RI = 2 Ω 2)
RL = 6.8 Ω
Power Stages
3.1.5
Load current
3.1.6
Maximum energy dissipation
single pulse
3.1.7
Power dissipation (DC)
IL(LIM) A
- 3)
IL
EAS
-
0.58
J
IL(0) = 2 A 4)
Tj(0) = 150°C
Ptot
-
1.7
W
Ta = 85 °C 5)
Tj ≤ 150 °C
VIN
-5
-16
10
V
IIN
-2.0
-8.0
2.0
VSEN
-5
-16
10
-2.0
-8.0
2.0
-25
10
Logic Pins
3.1.8
3.1.9
Voltage at input pin
Current through input pin
3.1.10 Voltage at sense enable pin
3.1.11 Current through sense enable ISEN
pin
3.1.12 Current through sense pin
Data Sheet
IIS
9
t ≤ 2 min
mA
t ≤ 2 min
V
t ≤ 2 min
mA
t ≤ 2 min
mA
V1.0, 2004-01-23
Smart High-Side Power Switch
BTS 5434G
Electrical Characteristics
Unless otherwise specified:
Tj = 25 °C
Pos.
Parameter
Symbol
Limit Values
min.
Unit Test
Conditions
max.
Temperatures
Tj
3.1.14 Dynamic temperature increase ∆Tj
3.1.13 Junction Temperature
-40
150
°C
-
60
°C
-55
150
°C
while switching
3.1.15 Storage Temperature
Tstg
ESD Susceptibility
VESD
3.1.16 ESD susceptibility HBM
IN, SEN
IS
OUT
kV
-1
-2
-4
1
2
4
according to
EIA/JESD
22-A 114B
1)
R and L describe the complete circuit impedance including line, contact and generator impedances
2)
Load Dump is specified in ISO 7636, RI is the internal resistance of the Load Dump pulse generator
3)
Current limitation is a protection feature. Operation in current limitation is considered as “outside” normal
operating range. Protection features are not designed for continuous repetitive operation.
4)
Pulse shape represents inductive switch off: IL(t) = IL(0) * (1 - t / tpeak); 0 < t < tpeak
5)
Device mounted on PCB (50 mm x 50 mm x 1.5mm epoxy, FR4) with 6 cm2 copper heatsinking area (one
layer, 70 µm thick) for Vbb connection. PCB is vertical without blown air.
Data Sheet
10
V1.0, 2004-01-23
Smart High-Side Power Switch
BTS 5434G
Block Description and Electrical Characteristics
4
Block Description and Electrical Characteristics
4.1
Power Stages
The power stages are built by a N-channel vertical power MOSFET (DMOS) with charge
pump.
4.1.1
Output On-State Resistance
The on-state resistance RDS(ON) depends on the supply voltage as well as the junction
temperature Tj. Figure 4 shows that dependencies for the typical on-state resistance.
The behavior in reverse polarity mode is described in Section 4.2.2.
Tj = 25°C
90
160
80
140
RDS(ON) /mΩ
RDS(ON) /mΩ
Vbb = 13.5 V
70
60
50
120
100
80
40
60
30
40
-50 -25
0
25
50
75 100 125 150
0
T /°C
Figure 4
4.1.2
5
10
15
Vbb /V
20
25
Typical On-State Resistance
Input Circuit
Figure 5 shows the input circuit of the BTS 5434G. There is an integrated input resistor
that makes external components obsolete. The current sink to ground ensures that the
device switches off in case of open input pin. The zener diode protects the input circuit
against ESD pulses.
IN
RIN
IIN
RGND
GND
Input.emf
Figure 5
Data Sheet
Input Circuit (IN1 .. IN4)
11
V1.0, 2004-01-23
Smart High-Side Power Switch
BTS 5434G
Block Description and Electrical Characteristics
A high signal at the input pin causes the power DMOS to switch on with a dedicated
slope, which is optimized in terms of EMC emission.
IN
VOUT
tON
tOFF
t
90%
70%
70%
dV /dtON
dV /dtOFF
30%
30%
10%
t
Figure 6
4.1.3
SwitchOn.emf
Switching a Load (resistive)
Inductive Output Clamp
When switching off inductive loads with high-side switches, the voltage VOUT drops
below ground potential, because the inductance intends to continue driving the current.
V bb
VBB
IL
GND
OUT V OUT
L,
RL
OutputClamp.emf
Figure 7
Output Clamp (OUT1 .. OUT4)
To prevent destruction of the device, there is a voltage clamp mechanism implemented
that keeps that negative output voltage at a certain level (VOUT(CL)). See Figure 7 and
Figure 8 for details. Nevertheless, the maximum allowed load inductance is limited.
Data Sheet
12
V1.0, 2004-01-23
Smart High-Side Power Switch
BTS 5434G
Block Description and Electrical Characteristics
V OUT
IN = 5V
IN = 0V
Vbb
0
t
V OUT(CL)
IL
t
Figure 8
InductiveLoad.emf
Switching an Inductance
Maximum Load Inductance
While demagnetization of inductive loads, energy has to be dissipated in the
BTS 5434G. This energy can be calculated with following equation:
V OUT(CL)
RL ⋅ IL
L
- ⋅ ln 1 + ------------------------E = ( V bb + V OUT(CL) ) ⋅ ------------------------- + I L ⋅ -----RL
RL
V OUT(CL)
Following equation simplifies under the assumption of RL = 0:
V bb
2
1
E = --- LI L ⋅ 1 + -------------------------
2
V OUT(CL)
The energy, which is converted into heat, is limited by the thermal design of the
component. See Figure 9 for the maximum allowed energy dissipation.
Vbb = 12 V
0.6
0.5
0.4
EAS /J
0.3
0.2
0.1
0.05
0.04
2
Figure 9
Data Sheet
3
4
5
6
I /A
7
8
9
10
Maximum energy dissipation single pulse, Tj,Start = 150°C
13
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Smart High-Side Power Switch
BTS 5434G
Block Description and Electrical Characteristics
4.1.4
Electrical Characteristics
Unless otherwise specified:
Vbb = 9 V to 16 V, Tj = -40 °C to +150 °C, typical values: Vbb = 13.5 V, Tj = 25 °C
Pos.
Parameter
Symbol
Limit Values
min.
typ.
Unit
Test Conditions
V
VIN = 4.5 V
RL = 12 Ω
VDS < 0.5 V
VIN = 5 V
max.
General
Vbb
4.1.1
Operating voltage
4.1.2
Operating current
IGND
one channel active
all channels active
4.1.3
Standby current for
whole device with
load
4.5
28
mA
1.8
7.2
4
16
Ibb(OFF)
3
µA
VIN = 0 V
VSEN = 0 V
Tj = 25°C
Tj = 85°C1)
Tj = 150°C
mΩ
IL = 2.5 A
Tj = 25 °C
Tj = 150 °C
IL < 0.25 A
5
5
30
Output characteristics
4.1.4
On-State resistance
per channel
RDS(ON)
45
90
4.1.5
Output voltage drop
VDS(NL)
limitation at small load
currents
4.1.6
Nominal load current IL(nom)
per channel
one channel active
four channels active
4.1.7
Output clamp
4.1.8
Output leakage
current per channel
4.1.9
Inverse current
capability
Data Sheet
VOUT(CL)
IL(OFF)
60
115
40
mV
A
Ta = 85 °C
Tj ≤ 150 °C 2) 3)
IL = 40 mA
VIN = 0 V
3.4
1.9
-16
-IL(inv)
-13
-10
V
0.1
6
µA
3
14
A
1)
V1.0, 2004-01-23
Smart High-Side Power Switch
BTS 5434G
Block Description and Electrical Characteristics
Unless otherwise specified:
Vbb = 9 V to 16 V, Tj = -40 °C to +150 °C, typical values: Vbb = 13.5 V, Tj = 25 °C
Pos.
Parameter
Symbol
Limit Values
min.
typ.
Unit
Test Conditions
K/W
- 1)
K/W
- 1)2)
max.
Thermal Resistance
4.1.10 Junction to case
4.1.11 Junction to ambient
one channel active
all channels active
Rthjc
Rthja
-
30
-
44
38
1.8
3.5
Input characteristics
4.1.12 Input resistor
4.1.13 L-input level
4.1.14 H-input level
4.1.15 L-input current
4.1.16 H-input current
RIN
VIN(L)
VIN(H)
IIN(L)
IIN(H)
5.5
kΩ
-0.3
1.0
V
2.5
5.7
V
3
18
75
µA
10
38
75
µA
VIN = 0.4 V
VIN = 5 V
Timings
4.1.17 Turn-on time to
90% Vbb
tON
100
250
µs
4.1.18 Turn-off time to
10% Vbb
tOFF
120
250
µs
4.1.19 slew rate
30% to 70% Vbb
dV/ dtON
0.1
0.25
0.5
V/µs
4.1.20 slew rate
70% to 30% Vbb
-dV/
dtOFF
0.1
0.25
0.5
V/µs
RL = 12 Ω
Vbb = 13.5 V
RL = 12 Ω
Vbb = 13.5 V
RL = 12 Ω
Vbb = 13.5 V
RL = 12 Ω
Vbb = 13.5 V
1)
Not subject to production test, specified by design
2)
Device mounted on PCB (50 mm x 50 mm x 1.5mm epoxy, FR4) with 6 cm2 copper heatsinking area (one
layer, 70 µm thick) for Vbb connection. PCB is vertical without blown air.
3)
Not subject to production test, parameters are calculated from RDS(ON) and Rth
Note: Characteristics show the deviation of parameter at the given supply voltage and
junction temperature. Typical values show the typical parameters expected from
manufacturing.
Data Sheet
15
V1.0, 2004-01-23
Smart High-Side Power Switch
BTS 5434G
4.2
Protection Functions
The device provides embedded protective functions. Integrated protection functions are
designed to prevent IC destruction under fault conditions described in the data sheet.
Fault conditions are considered as “outside” normal operating range. Protection
functions are neither designed for continuous nor repetitive operation.
4.2.1
Over Load Protection
The load current IOUT is limited by the device itself in case of over load or short circuit to
ground. There are three steps of current limitation which are selected automatically
depending on the voltage VDS across the power DMOS. Please note that the voltage at
the OUT pin is Vbb - VDS. Please refer to following figure for details.
IL
25
20
15
10
5
5
Figure 10
10
15
20
VDS
CurrentLimitation.emf
Current Limitation (minimum values)
Current limitation is realized by increasing the resistance of the device which leads to
rapid temperature rise inside. A temperature sensor for each channel causes an
overheated channel to switch off to prevent destruction. After cooling down with thermal
hysteresis, the channel switches on again. Please refer to Figure 11 for details.
IN
t
IL
IL(LIM)
IL(SCr)
tOFF(SC)
t
IIS
t
Figure 11
OverLoad .emf
Shut Down by Over Temperature with Current Limitation
In short circuit condition, the load current is initially limited to IL(LIM). After thermal restart,
the current limitation level is reduced to IL(SCr). The current limitation level is reset to
IL(LIM) by switching off the device (VIN = 0 V).
Data Sheet
16
V1.0, 2004-01-23
Smart High-Side Power Switch
BTS 5434G
4.2.2
Reverse Polarity Protection
In case of reverse polarity, the intrinsic body diode causes power dissipation. Additional
power is dissipated by the integrated ground resistor. Use following formula for
estimation of total power dissipation Pdiss(rev) in reverse polarity mode.
2
P diss(rev)
V bb
-------------(
V
⋅
I
)
2
=
+
DS(rev)
L
∑
R
GND
all channels
The reverse current through the intrinsic body diode has to be limited by the connected
load. The current through sense pins IS1 to IS4 has to be limited (please refer to
maximum ratings on Page 9). The current through the ground pin (GND) is limited
internally by RGND. The over-temperature protection is not active during reverse polarity.
4.2.3
Over Voltage Protection
In addition to the output clamp for inductive loads as described in Section 4.1.3, there is
a clamp mechanism for over voltage protection. Because of the integrated ground
resistor, over voltage protection does not require external components.
As shown in Figure 12, in case of supply voltages greater than Vbb(AZ), the power
transistor switches on and the voltage across logic part is clamped. As a result, the
internal ground potential rises to Vbb - Vbb(AZ). Due to the ESD zener diodes, the
potential at pin IN1, IN2 and SEN rises almost to that potential, depending on the
impedance of the connected circuitry.
IN
ZDAZ
RIN
VBB
IS
SEN RSEN
logic
ZDESD
internal ground
RGND
OUT
V OUT
GND
OverVoltage .emf
Figure 12
4.2.4
Over Voltage Protection
Loss of Ground Protection
In case of complete loss of the device ground connections, but connected load ground,
the BTS 5434G securely changes to or keeps in off state.
Data Sheet
17
V1.0, 2004-01-23
Smart High-Side Power Switch
BTS 5434G
4.2.5
Electrical Characteristics
Unless otherwise specified:
Vbb = 9 V to 16 V, Tj = -40 °C to +150 °C , typical values: Vbb = 13.5 V, Tj = 25 °C
Pos.
Parameter
Symbol
Limit Values
min.
Unit
Test Conditions
A
VDS = 7 V
VDS = 14 V
Tj = Tj(SC) 1)
0.5
ms
TjStart = 25 °C 1)
170
°C
-
K
-1)
mV
IL = -3.5 A
Vbb = -13.5 V
Tj = 150°C
Vbb = -13.5 V 1)
typ.
max.
Over Load Protection
4.2.1
Load current limitation IL(LIM)
4.2.2
Repetitive short circuit IL(SCr)
current limitation
4.2.3
Initial short circuit shut tOFF(SC)
down time
4.2.4
Thermal shut down
temperature
Tj(SC)
Thermal hysteresis
∆Tj
4.2.5
23
42
A
14
28
A
6
150
1)
7
Reverse Battery
4.2.6
Drain-Source diode
voltage (VOUT > Vbb)
-VDS(rev)
4.2.7
Reverse current
through each GND
pin
-IGND
900
65
mA
Ground Circuit
4.2.8
Integrated Resistors
in GND lines
RGND
115
220
350
Ω
Vbb(AZ)
41
47
53
V
Ibb = 4 mA
1
mA
IIN = 0, ISEN = 0,
IIS = 0,
IGND = 0 1) 2)
Over Voltage
4.2.9
Over voltage
protection
Loss of GND
4.2.10 Output leakage
current while GND
disconnected
IL(GND)
1)
Not subject to production test, specified by design
2)
no connection at these pins
Data Sheet
18
V1.0, 2004-01-23
Smart High-Side Power Switch
BTS 5434G
4.3
Diagnosis
For diagnosis purpose, the BTS 5434G provides an Enhanced IntelliSense signal at pins
IS1 to IS4. This means in detail, the current sense signal IIS, a proportional signal to the
load current (ratio kILIS = IL / IIS), is provided in ON-state as long as no failure mode
occurs. In case of open load in OFF-state, the voltage VIS(fault) is fed to the diagnosis pin.
S OL
VBB
IIS1
IN1
Rlim
ROL
gate control
RIN1
IS1
0
1
1
0
OUT1
0
V IS(fault)
1
SEN
µC
VOUT(OL)
RSEN
channel 1
IN2
Rlim
gate control
RIN2
IS2
0
RIS1 RIS2
IIS2
diagnosis
1
OUT2
channel 2
GND
load
Diagnosis equivalent for channel 3 and 4
Figure 13
Block Diagram: Diagnosis
Table 1
Truth Table
Operation Mode
Normal Operation (OFF)
Input
Level
Output
Level
Diagnostic Output
SEN = H
SEN = L
Z
Z
Z
Short Circuit to GND
Z
Z
Z
Over Temperature
Z
Z
Z
Short Circuit to Vbb
Vbb
VIS = VIS(fault)
Z
< VOUT(OL)
> VOUT(OL)
Z
Z
Z
Open Load
Data Sheet
L
Sense.emf
19
VIS = VIS(fault)
V1.0, 2004-01-23
Smart High-Side Power Switch
BTS 5434G
Table 1
Truth Table
Operation Mode
Input
Level
Output
Level
Diagnostic Output
SEN = H
SEN = L
~Vbb
IIS = IL / kILIS
Z
Current Limitation
< Vbb
Z
Z
Short Circuit to GND
500 Ω. A typical value is 4.7 kΩ.
8000
dummy
Tj = 150°C
dummy
Tj = -40°C
7000
6000
kILIS
5000
4000
3000
2000
1000
0
Figure 14
1)
0.5
1
1.5
2
IL /A
2.5
3
3.5
4
Current sense ratio kILIS1)
The curves show the behavior based on characterization data. The marked points are guaranteed in this Data
Sheet in Section 4.3.4 (Position 4.3.6).
Data Sheet
20
V1.0, 2004-01-23
Smart High-Side Power Switch
BTS 5434G
In case of over current as well as over temperature, the current sense signal is switched
off. As a result, one threshold is enough to distinguish between normal and faulty
operation. Open load and over load can be differentiated by switching off the channel
and using open load detection in off-state.
Details about timings between the diagnosis signal IIS and the output voltage VOUT and
load current IL in ON-state can be found in Figure 15.
IN
OFF
ON
t
tON
V OUT
t
IL
tsIS(ON)
IIS
t
tsIS(LC)
t
SwitchOn .emf
Figure 15
4.3.2
Timing of Diagnosis Signal in ON-state
OFF-State Diagnosis
Details about timings between the diagnosis signal IIS and the output voltage VOUT and
load current IL in OFF-state can be found in Figure 16.
IN
ON
V OUT
OFF
t
tOFF
Open Load
t
IL
IIS
td(fault)
t
ts(fault)
V IS(fault) / RS
t
SwitchOff.emf
Figure 16
Data Sheet
Timing of Diagnosis Signal in OFF-state
21
V1.0, 2004-01-23
Smart High-Side Power Switch
BTS 5434G
For open load diagnosis in off state an external output pull-up resistor (ROL) is
recommended. For calculation of the pull-up resistor, just the external leakage current
Ileakage and the open load threshold voltage VOUT(OL) has to be taken into account.
V bb(min) – V OUT(OL,max)
R OL = ---------------------------------------------------------I leakage
Ileakage defines the leakage current in the complete system e.g. caused by humidity.
There is no internal leakage current from out to ground at BTS 5434G. Vbb(min) is the
minimum supply voltage at which the open load diagnosis in off state must be ensured.
To reduce the stand-by current of the system, an open load resistor switch (SOL) is
recommended.
4.3.3
Sense Enable Function
The diagnosis signals have to be switched on by a high signal at sense enable pin (SEN).
See Figure 17 for details on the timing between SEN pin and diagnosis signal IIS.
Please note that the diagnosis is disabled, when no signal is provided at pin SEN.
SEN
IIS
tsIS(SEN)
tdIS(SEN)
tsIS(SEN)
tdIS(SEN)
t
t
Figure 17
SEN.emf
Timing of Sense Enable Signal
The SEN pin circuit is designed equal to the input pin. Please refer to Figure 5 for details.
The resistors Rlim are recommended to limit the current through the sense pins IS1 to
IS4 in case of reverse polarity and over voltage. Please refer to maximum ratings on
Page 9.
The stand-by current of the BTS 5434G is minimized, when both input pins (IN1 and IN2
or IN3 and IN4) and the according sense enable pin (SENA or SENB) are on low level.
Data Sheet
22
V1.0, 2004-01-23
Smart High-Side Power Switch
BTS 5434G
4.3.4
Electrical Characteristics
Unless otherwise specified:
Vbb = 9 V to 16 V, Tj = -40 °C to +150 °C, VSEN = 5 V,
typical values: Vbb = 13.5 V, Tj = 25 °C
Pos.
Parameter
Symbol
Limit Values
Unit
min.
typ.
max.
2.8
4.4
V
6.5
V
Test Conditions
Open Load at OFF-State
4.3.1
Open load detection
threshold voltage
VOUT(OL)
1.6
4.3.2
Sense signal in case
of open load
VIS(fault)
3.5
4.3.3
Sense signal current
limitation
IIS(LIM)
2
4.3.4
Sense signal invalid
after negative input
slope
td(fault)
1.2
ms
4.3.5
Fault signal settling
time
ts(fault)
200
µs
mA
VIN = 0 V
VOUT = Vbb
IIS = 1 mA
VIN = 0 V
VOUT = Vbb
VIN = 5 V to 0 V
VOUT = Vbb
VIN = 0 V
VOUT = 0 V to
> VOUT(OL)
IIS = 1 mA
Load Current Sense ON-State
4.3.6
Current sense ratio
kILIS
IL = 40 mA
IL = 1.3 A
IL = 2.2 A
IL = 4.0 A
IL = 40 mA
IL = 1.3 A
IL = 2.2 A
IL = 4.0 A
4.3.7
Current sense voltage VIS(LIM)
limitation
4.3.8
IIS(LH)
Current sense
leakage/offset current
Data Sheet
VIN = 5 V
Tj = -40 °C
1000
2300
2410
2465
4035
3050
2920
2850
8000
3580
3380
3275
1400
2465
2520
2580
3410
2920
2875
2870
6000
3275
3220
3160
5.0
6.2
7.5
V
5
µA
23
Tj = 150 °C
IIS = 0.5 mA
IL = 3.5 A
VIN = 5 V
IL = 0 A
V1.0, 2004-01-23
Smart High-Side Power Switch
BTS 5434G
Unless otherwise specified:
Vbb = 9 V to 16 V, Tj = -40 °C to +150 °C, VSEN = 5 V,
typical values: Vbb = 13.5 V, Tj = 25 °C
Pos.
Parameter
Symbol
Limit Values
Unit
Test Conditions
2
µA
VSEN = 0 V
IL = 3.5 A
4.3.10 Current sense settling tsIS(ON)
time to IIS static ±10%
after positive input
slope
300
µs
VIN = 0 V to 5 V
IL = 3.5 A
4.3.11 Current sense settling tsIS(LC)
time to IIS static ±10%
after change of load
current
50
min.
4.3.9
Current sense
leakage, while
diagnosis disabled
typ.
IIS(dis)
max.
1)
µs
VIN = 5 V
IL = 1.3 A to 2.2 A
1)
Sense Enable
RSEN
L-input level
VSEN(L)
H-input level
VSEN(H)
ISEN(L)
L-input current
H-input current
ISEN(H)
Current sense settling tsIS(SEN)
4.3.12 Input resistance
1.8
4.3.13
4.3.14
4.3.15
4.3.16
4.3.17
3.5
5.5
kΩ
-0.3
1.0
V
2.5
5.7
V
3
18
75
µA
10
38
75
µA
3
25
µs
25
µs
time
4.3.18 Current sense
deactivation time
1)
tdIS(SEN)
VSEN = 0.4 V
VSEN = 5 V
VSEN = 0 V to 5 V
VIN = 0 V
VOUT > VOUT(OL)
VSEN = 5 V to 0 V
IL = 3.5 A
RS = 5 kΩ 1)
Not subject to production test, specified by design
Data Sheet
24
V1.0, 2004-01-23
Smart High-Side Power Switch
BTS 5434G
Package Outlines BTS 5434G
5
Package Outlines BTS 5434G
x
8˚ ma
7.6 -0.2 1)
+0.09
0.35 x 45˚
0.23
2.65 max
2.45 -0.2
0.2 -0.1
P-DSO-28-19
(Plastic Dual Small Outline Package)
0.4 +0.8
1.27
0.35 +0.15 2)
0.1
0.2 28x
28
1
10.3 ±0.3
15
18.1 -0.4 1)
14
Index Marking
1) Does not include plastic or metal protrusions of 0.15 max per side
2) Does not include dambar protrusion of 0.05 max per side
GPS05123
You can find all of our packages, sorts of packing and others in our
Infineon Internet Page “Products”: http://www.infineon.com/products.
Dimensions in mm
SMD = Surface Mounted Device
Data Sheet
25
V1.0, 2004-01-23
Smart High-Side Power Switch
BTS 5434G
Revision History
6
Revision History
Version
Date
Changes
V1.0
04-01-23
initial version
Data Sheet
26
2004-01-23
Smart High-Side Power Switch
BTS 5434G
Edition 2004-01-23
Published by Infineon Technologies AG,
St.-Martin-Strasse 53,
D-81541 München, Germany
© Infineon Technologies AG 1/31/04.
All Rights Reserved.
Attention please!
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characteristics.
Terms of delivery and rights to technical change reserved.
We hereby disclaim any and all warranties, including but not limited to warranties of non-infringement, regarding
circuits, descriptions and charts stated herein.
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For further information on technology, delivery terms and conditions and prices please contact your nearest
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Due to technical requirements components may contain dangerous substances. For information on the types in
question please contact your nearest Infineon Technologies Office.
Infineon Technologies Components may only be used in life-support devices or systems with the express written
approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure
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devices or systems are intended to be implanted in the human body, or to support and/or maintain and sustain
and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may
be endangered.
Data Sheet
27
2004-01-23
http://www.infineon.com
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