BTS711L1XUMA1

Smart High-Side Power Switch Smart High-Side Power Switch PROFET BTS711L1 Data Sheet Rev 1.3, 2012-01-16 Automotive Power Smart High-Side Power Switch BTS711L1 Smart Four Channel Highside Power Switch Features • Overload protection • Current limitation • Short-circuit protection • Thermal shutdown • Overvoltage protection (including load dump) • Fast demagnetization of inductive loads • Reverse battery protection1) • Undervoltage and overvoltage shutdown with auto-restart and hysteresis • Open drain diagnostic output • Open load detection in ON-state • CMOS compatible input • Loss of ground and loss of Vbb protection • Electrostatic discharge (ESD) protection Product Summary Overvoltage Protection Operating voltage active channels: On-state resistance RON Nominal load current , Current limitation ,  43 V Vbb(AZ) Vbb(on) 5.0 ... 34 V two parallel four parallel one 200 100 50 mΩ 1.9 2.8 4.4 A 4 4 4 A P-DSO-20 PG-DSO20 Application • μC compatible power switch with diagnostic feedback for 12 V and 24 V DC grounded loads • All types of resistive, inductive and capacitive loads • Replaces electromechanical relays and discrete circuits • AEC qualified • Green product (RoHS compliant) General Description N channel vertical power FET with charge pump, ground referenced CMOS compatible input and diagnostic ® feedback, monolithically integrated in Smart SIPMOS technology. Providing embedded protective functions. Pin Definitions and Functions Pin 1,10, 11,12, 15,16, 19,20 3 5 7 9 18 17 14 13 4 8 2 6 1) Symbol Function Vbb Positive power supply voltage. Design the wiring for the simultaneous max. short circuit currents from channel 1 to 4 and also for low thermal resistance IN1 Input 1 .. 4, activates channel 1 .. 4 in case of IN2 logic high signal IN3 IN4 OUT1 Output 1 .. 4, protected high-side power output OUT2 of channel 1 .. 4. Design the wiring for the OUT3 max. short circuit current OUT4 ST1/2 Diagnostic feedback 1/2 of channel 1 and channel 2, open drain, low on failure ST3/4 Diagnostic feedback 3/4 of channel 3 and channel 4, open drain, low on failure GND1/2 Ground 1/2 of chip 1 (channel 1 and channel 2) GND3/4 Ground 3/4 of chip 2 (channel 3 and channel 4) Pin configuration (top view) Vbb GND1/2 IN1 ST1/2 IN2 GND3/4 IN3 ST3/4 IN4 Vbb 1 2 3 4 5 6 7 8 9 10 • 20 19 18 17 16 15 14 13 12 11 Vbb Vbb OUT1 OUT2 Vbb Vbb OUT3 OUT4 Vbb Vbb With external current limit (e.g. resistor RGND=150 Ω) in GND connection, resistor in series with ST connection, reverse load current limited by connected load. Data Sheet 2 Rev 1.3, 2012-01-16 Smart High-Side Power Switch BTS711L1 Block diagram Four Channels; Open Load detection in on state;   !!  ' #   &  '  9  (  *  )   & '    ! "  $"  #" # % ' # ! " $" &   , #     '  # '  # "# &  #" # %    '  '    +   #  $ $   & &   "# ' (  ( "  ) 12! 3 + ( - ) , () ' )  ) 0   &()  & '  ( ® $ '  $ ( ) &() & "#./...*.0.-./ Data Sheet 3 Rev 1.3, 2012-01-16 Smart High-Side Power Switch BTS711L1 Maximum Ratings at Tj = 25°C unless otherwise specified Parameter Symbol Supply voltage (overvoltage protection see page 4) Supply voltage for full short circuit protection Tj,start = -40 ...+150°C Load current (Short-circuit current, see page 5) Load dump protection2) VLoadDump = UA + Vs, UA = 13.5 V RI3) = 2 Ω, td = 200 ms; IN = low or high, each channel loaded with RL = 7.1 Ω, Operating temperature range Storage temperature range Power dissipation (DC)5 Ta = 25°C: (all channels active) Ta = 85°C: Inductive load switch-off energy dissipation, single pulse Vbb = 12V, Tj,start = 150°C5), one channel: IL = 1.9 A, ZL = 66 mH, 0 Ω two parallel channels: IL = 2.8 A, ZL = 66 mH, 0 Ω IL = 4.4 A, ZL = 66 mH, 0 Ω four parallel channels: Vbb Vbb Values Unit 43 34 V V IL VLoad self-limited 60 A V Tj Tstg Ptot -40 ...+150 -55 ...+150 3.6 1.9 °C EAS 150 320 800 mJ VESD 1.0 kV -10 ... +16 ±2.0 ±5.0 V mA 16 44 35 K/W 4) dump W see diagrams on page 9 and page 10 Electrostatic discharge capability (ESD) (Human Body Model) Input voltage (DC) Current through input pin (DC) Current through status pin (DC) VIN IIN IST see internal circuit diagram page 8 Thermal resistance junction - soldering point5),6) junction - ambient5) 2) each channel: one channel active: all channels active: Rthjs Rthja Supply voltages higher than Vbb(AZ) require an external current limit for the GND and status pins, e.g. with a 150 Ω resistor in the GND connection and a 15 kΩ resistor in series with the status pin. A resistor for input protection is integrated. 3) R = internal resistance of the load dump test pulse generator I 4) V Load dump is setup without the DUT connected to the generator per ISO 7637-1 and DIN 40839 5) Device on 50mm*50mm*1.5mm epoxy PCB FR4 with 6cm2 (one layer, 70μm thick) copper area for V bb connection. PCB is vertical without blown air. See page 15 6) Soldering point: upper side of solder edge of device pin 15. See page 15 Data Sheet 4 Rev 1.3, 2012-01-16 Smart High-Side Power Switch BTS711L1 Electrical Characteristics Parameter and Conditions, each of the four channels Symbol at Tj = 25 °C, Vbb = 12 V unless otherwise specified Load Switching Capabilities and Characteristics On-state resistance (Vbb to OUT) IL = 1.8 A each channel, Tj = 25°C: RON Tj = 150°C: two parallel channels, Tj = 25°C: four parallel channels, Tj = 25°C: Nominal load current one channel active: two parallel channels active: four parallel channels active: 5) Device on PCB , Ta = 85°C, Tj ≤ 150°C Output current while GND disconnected or pulled up; Vbb = 30 V, VIN = 0, see diagram page 9 Turn-on time to 90% VOUT: Turn-off time to 10% VOUT: RL = 12 Ω, Tj =-40...+150°C Slew rate on Tj =-40...+150°C: 10 to 30% VOUT, RL = 12 Ω, Slew rate off 70 to 40% VOUT, RL = 12 Ω, Tj =-40...+150°C: Operating Parameters Operating voltage7) Undervoltage shutdown Undervoltage restart Tj =-40...+150°C: Tj =-40...+150°C: Tj =-40...+25°C: Tj =+150°C: Undervoltage restart of charge pump see diagram page 14 Tj =-40...+150°C: Undervoltage hysteresis ΔVbb(under) = Vbb(u rst) - Vbb(under) Overvoltage shutdown Tj =-40...+150°C: Overvoltage restart Tj =-40...+150°C: Overvoltage hysteresis Tj =-40...+150°C: 8 ) Overvoltage protection Tj =-40...+150°C: I bb = 40 mA 7) 8) Values min typ max -- Unit mΩ 165 320 200 400 1.7 2.6 4.1 83 42 1.9 2.8 4.4 100 50 -- A -- -- 10 mA ton toff 80 80 200 200 400 400 μs dV/dton 0.1 -- 1 V/μs -dV/dtoff 0.1 -- 1 V/μs Vbb(on) Vbb(under) Vbb(u rst) 5.0 3.5 -- ---- V V V Vbb(ucp) -- 5.6 34 5.0 5.0 7.0 7.0 ΔVbb(under) -- 0.2 -- V Vbb(over) Vbb(o rst) ΔVbb(over) Vbb(AZ) 34 33 -42 --0.5 47 43 ---- V V V V IL(NOM) IL(GNDhigh) V At supply voltage increase up to Vbb = 5.6 V typ without charge pump, VOUT ≈Vbb - 2 V see also VON(CL) in circuit diagram on page 8. Data Sheet 5 Rev 1.3, 2012-01-16 Smart High-Side Power Switch BTS711L1 Parameter and Conditions, each of the four channels Symbol at Tj = 25 °C, Vbb = 12 V unless otherwise specified Standby current, all channels off Tj =25°C: Ibb(off) VIN = 0 Tj =150°C: Leakage output current (included in Ibb(off)) IL(off) VIN = 0 Operating current 9), VIN = 5V, Tj =-40...+150°C IGND = IGND1/2 + IGND3/4, one channel on: IGND four channels on: Values min typ max Unit μA ---- 28 44 -- 60 70 12 --- 2 8 3 12 mA each channel, Tj =-40°C: IL(SCp) 5.5 9.5 13 4.5 7.5 11 Tj =25°C: 7 2.5 4.5 Tj =+150°C: two parallel channels twice the current of one channel four parallel channels four times the current of one channel Repetitive short circuit current limit, -4 Tj = Tjt each channel IL(SCr) --4 -two parallel channels -4 -four parallel channels A μA Protection Functions10) Initial peak short circuit current limit, (see timing diagrams, page 13) A (see timing diagrams, page 13) Initial short circuit shutdown time Tj,start =-40°C: toff(SC) Tj,start = 25°C: --- 48 29 --- ms -- 47 -- V 150 -- -10 --- °C K --- -610 32 -- V mV (see page 11 and timing diagrams on page 13) VON(CL) Output clamp (inductive load switch off)11) at VON(CL) = Vbb - VOUT Thermal overload trip temperature Thermal hysteresis Tjt ΔTjt Reverse Battery Reverse battery voltage 12) Drain-source diode voltage (Vout > Vbb) IL = - 1.9 A, Tj = +150°C -Vbb -VON 9) Add IST, if IST > 0 Integrated protection functions are designed to prevent IC destruction under fault conditions described in the data sheet. Fault conditions are considered as "outside" normal operating range. Protection functions are not designed for continuous repetitive operation. 11) If channels are connected in parallel, output clamp is usually accomplished by the channel with the lowest VON(CL) 12) Requires a 150 Ω resistor in GND connection. The reverse load current through the intrinsic drain-source diode has to be limited by the connected load. Note that the power dissipation is higher compared to normal operating conditions due to the voltage drop across the intrinsic drain-source diode. The temperature protection is not active during reverse current operation! Input and Status currents have to be limited (see max. ratings page 3 and circuit page 8). 10) Data Sheet 6 Rev 1.3, 2012-01-16 Smart High-Side Power Switch BTS711L1 Parameter and Conditions, each of the four channels Symbol at Tj = 25 °C, Vbb = 12 V unless otherwise specified Values min typ max Diagnostic Characteristics Open load detection current, (on-condition) 10 -200 each channel, Tj = -40°C: I L (OL) 10 -150 Tj = 25°C: 10 -150 Tj = 150°C: twice the current of one channel two parallel channels four times the current of one channel four parallel channels 13 ) Tj =-40..+150°C: VOUT(OL) Open load detection voltage 2 3 4 Internal output pull down (OUT to GND), VOUT = 5 V Tj =-40..+150°C: RO 4 10 30 1 Input and Status Feedback14) Input resistance (see circuit page 8) Input turn-on threshold voltage Input turn-off threshold voltage Tj =-40..+150°C: Tj =-40..+150°C: Tj =-40..+150°C: Input threshold hysteresis Off state input current VIN = 0.4 V: Tj =-40..+150°C: On state input current VIN = 5 V: Tj =-40..+150°C: Delay time for status with open load after switch off (other channel in off state) (see timing diagrams, page 13), Tj =-40..+150°C: Delay time for status with open load after switch off (other channel in on state) (see timing diagrams, page 13), Tj =-40..+150°C: Status invalid after positive input slope (open load) Tj =-40..+150°C: Status output (open drain) Zener limit voltage Tj =-40...+150°C, IST = +1.6 mA: ST low voltage Tj =-40...+25°C, IST = +1.6 mA: Tj = +150°C, IST = +1.6 mA: 13) 14) Unit mA V kΩ RI 2.5 3.5 6 kΩ VIN(T+) 1.7 -- 3.5 V VIN(T-) 1.5 -- -- V -1 0.5 -- -50 V μA 20 50 90 μA td(ST OL4) 100 320 800 μs td(ST OL5) -- 5 20 μs td(ST) -- 200 600 μs 5.4 --- 6.1 --- -0.4 0.6 V Δ VIN(T) IIN(off) IIN(on) VST(high) VST(low) External pull up resistor required for open load detection in off state. If ground resistors RGND are used, add the voltage drop across these resistors. Data Sheet 7 Rev 1.3, 2012-01-16 Smart High-Side Power Switch BTS711L1 Truth Table Channel 1 and 2 Channel 3 and 4 (equivalent to channel 1 and 2) IN1 IN3 Chip 1 Chip 2 Normal operation Open load Channel 1 (3) Channel 2 (4) Short circuit to Vbb Channel 1 (3) Channel 2 (4) Overtemperature both channel Channel 1 (3) Channel 2 (4) Undervoltage/ Overvoltage L = "Low" Level H = "High" Level IN2 IN4 OUT1 OUT3 OUT2 OUT4 L L H H L L H L H L H L H X L L H H Z Z H L H L H L H X L H X L L H L L H L H X L H X H H H Z Z H L H X L H X L X H L H X X X L L H L H X X X L H X L H X L L L L L X X L H H H L L L X X L L L ST1/2 ST3/4 ST1/2 ST3/4 BTS 711L1 BTS 712N1 H H H H H H H H L H H H(L15)) H L H(L15)) H L L H H L16) H H L16) H H(L17)) L16) H H(L17)) H L L H L H L H L16) H H H L L H L H L H X = don't care Z = high impedance, potential depends on external circuit Status signal valid after the time delay shown in the timing diagrams Parallel switching of channel 1 and 2 (also channel 3 and 4) is easily possible by connecting the inputs and outputs in parallel (see truth table). If switching channel 1 to 4 in parallel, the status outputs ST1/2 and ST3/4 have to be configured as a 'Wired OR' function with a single pull-up resistor. Terms        "#            ( * )       '     &  $  & ,   +       (  ) "#  (  )  ()  ( )  ()   + , ( )  (  '   ) () &() 0 $ &   &() )  ( (  )   (  ) &() Leadframe (Vbb) is connected to pin 1,10,11,12,15,16,19,20 External RGND optional; two resistors RGND1/2 ,RGND3/4 = 150 Ω or a single resistor RGND = 75 Ω for reverse battery protection up to the max. operating voltage. 15) With additional external pull up resistor An external short of output to Vbb in the off state causes an internal current from output to ground. If RGND is used, an offset voltage at the GND and ST pins will occur and the VST low signal may be errorious. 17) Low resistance to V may be detected by no-load-detection bb 16) Data Sheet 8 Rev 1.3, 2012-01-16 Smart High-Side Power Switch BTS711L1 Overvoltage protection of logic part Input circuit (ESD protection), IN1...4  $ GND1/2 or GND3/4    =>    $  >      & $  > ESD zener diodes are not to be used as voltage clamp at DC conditions. Operation in this mode may result in a drift of the zener voltage (increase of up to 1 V). & $ & & Status output, ST1/2 or ST3/4 VZ1 = 6.1 V typ., VZ2 = 47 V typ., RI = 3.5 kΩ typ., RGND = 150 Ω * $ 13 Reverse battery protection B* = > & $  =  $    ESD-Zener diode: 6.1 V typ., max 5.0 mA; RST(ON) < 380 Ω at 1.6 mA, ESD zener diodes are not to be used as voltage clamp at DC conditions. Operation in this mode may result in a drift of the zener voltage (increase of up to 1 V).  ?A !  & $& & Inductive and overvoltage output clamp, OUT1...4 $ ?A& RGND = 150 Ω, RI = 3.5 kΩ typ, Temperature protection is not active during inverse current operation.  >    ?$@ ?A& VON clamped to VON(CL) = 47 V typ. . Data Sheet 9 Rev 1.3, 2012-01-16 Smart High-Side Power Switch BTS711L1 Open-load detection, OUT1...4 ON-state diagnostic condition: VON < RON·IL(OL); IN high GND disconnect with GND pull up (channel 1/2 or 3/4)             &                & Any kind of load. If VGND > VIN - VIN(T+) device stays off Due to VGND > 0, no VST = low signal available. OFF-state diagnostic condition: VOUT > 3 V typ.; IN low Vbb disconnect with energized inductive load $ C @@   &       $      & Consider at your PCB layout that in the case of Vbb disconnection with energized inductive load the whole load current flows through the GND connection. (channel 1/2 or 3/4)     For an inductive load current up to the limit defined by EAS (max. ratings see page 3 and diagram on page 10) each switch is protected against loss of Vbb. GND disconnect            &           & Any kind of load. In case of IN = high is VOUT ≈ VIN - VIN(T+). Due to VGND > 0, no VST = low signal available. Data Sheet 10 Rev 1.3, 2012-01-16 Smart High-Side Power Switch BTS711L1 Inductive load switch-off energy dissipation Typ. on-state resistance  ; IL = 1.8 A, IN = high  E    )*/   RON [mOhm] *//  )//  & > ^ $  (*/ (// $  */ Energy stored in load inductance: 2 =)/H' // EAS= Ebb + EL - ER= VON(CL)·iL(t) dt, */ with an approximate solution for RL > 0 Ω: (1+ |V *H' */ While demagnetizing load inductance, the energy dissipated in PROFET is IL· L (V + |VOUT(CL)|) 2·RL bb ,*H' // EL = 1/2·L·I L EAS= FG*/H' IL·RL OUT(CL)| / ) / / / (/ )/ Vbb [V] Typ. open load detection current Maximum allowable load inductance for a single switch off (one channel)5)   IN = high  Tj,start = 150°C, Vbb = 12 V, RL = 0 Ω IL(OL) [mA] L [mH] /// )/ =)/H' / // ,/ 0/ )/ / *H' " " I0 // / ,*H' FG*/H' / /   %*  %* ( * / * / * (/ Vbb [V] IL [A] Data Sheet 11 Rev 1.3, 2012-01-16 Smart High-Side Power Switch BTS711L1 Typ. standby current ; Vbb = 9...34 V, IN1...4 = low Ibb(off) [μA] Tj [°C] Typ. initial short circuit shutdown time ; Vbb =12 V t off(S C ) [ms ec ] 60 50 40 30 20 10 0 40 Data Sheet -25 0 25 50 75 100 125 150 T j, s tart [°C] 12 Rev 1.3, 2012-01-16 Smart High-Side Power Switch BTS711L1 Timing diagrams Timing diagrams are shown for chip 1 (channel 1/2). For chip 2 (channel 3/4) the diagrams are valid too. The channels 1 and 2, respectively 3 and 4, are symmetric and consequently the diagrams are valid for each channel as well as for permuted channels Figure 2b: Switching an inductive load Figure 1a: Vbb turn on:       1 3 J3           13    *) if the time constant of load is too large, open-load-status may occur Figure 2a: Switching a lamp: Figure 3a: Turn on into short circuit: shut down by overtemperature, restart by cooling     K#      1 '3   1 '3    ""1 '3  The initial peak current should be limited by the lamp and not by the initial short circuit current IL(SCp) = 7.5 A typ. of the device. Data Sheet Heating up of the chip may require several milliseconds, depending on external conditions (toff(SC) vs. Tj,start see page 11) 13 Rev 1.3, 2012-01-16 Smart High-Side Power Switch BTS711L1 Figure 5a: Open load: detection in ON-state, open load occurs in on-state Figure 3b: Turn on into short circuit: shut down by overtemperature, restart by cooling (two parallel switched channels 1 and 2)    K#    1 '3    1 '3  K       ""1 '3  1 3   #   1 3  1 3  1 3   td(ST OL1) = 30 μs typ., td(ST OL2) = 20 μs typ Figure 4a: Overtemperature: Reset if Tj