C67076-A2506-A67

BSM 35 GD 120 DN2 IGBT Power Module • Power module • 3-phase full-bridge • Including fast free-wheel diodes • Package with insulated metal base plate Type BSM 35 GD 120 DN2 BSM35GD120DN2E3224 Maximum Ratings Parameter Collector-emitter voltage Collector-gate voltage RGE = 20 kΩ Gate-emitter voltage DC collector current TC = 25 °C TC = 80 °C Pulsed collector current, tp = 1 ms TC = 25 °C TC = 80 °C Power dissipation per IGBT TC = 25 °C Chip temperature Storage temperature Thermal resistance, chip case Diode thermal resistance, chip case Insulation test voltage, t = 1min. Creepage distance Clearance DIN humidity category, DIN 40 040 IEC climatic category, DIN IEC 68-1 Tj Tstg RthJC RthJCD Vis Ptot 280 + 150 -40 ... + 125 ≤ 0.44 ≤ 0.8 2500 16 11 F 40 / 125 / 56 sec Vac mm K/W °C ICpuls 100 70 W VGE IC 50 35 Symbol VCE VCGR 1200 ± 20 A Values 1200 Unit V VCE IC Package ECONOPACK 2 ECONOPACK 2K Ordering Code C67076-A2506-A67 C67070-A2506-A67 1200V 50A 1200V 50A 1 Oct-20-1997 BSM 35 GD 120 DN2 Electrical Characteristics, at Tj = 25 °C, unless otherwise specified Parameter Symbol min. Static Characteristics Gate threshold voltage VGE = VCE, IC = 1.2 mA Collector-emitter saturation voltage VGE = 15 V, IC = 35 A, Tj = 25 °C VGE = 15 V, IC = 35 A, Tj = 125 °C Zero gate voltage collector current VCE = 1200 V, VGE = 0 V, Tj = 25 °C VCE = 1200 V, VGE = 0 V, Tj = 125 °C Gate-emitter leakage current VGE = 20 V, VCE = 0 V AC Characteristics Transconductance VCE = 20 V, IC = 35 A Input capacitance VCE = 25 V, VGE = 0 V, f = 1 MHz Output capacitance VCE = 25 V, VGE = 0 V, f = 1 MHz Reverse transfer capacitance VCE = 25 V, VGE = 0 V, f = 1 MHz Crss 0.14 Coss 0.3 Ciss 2 gfs 11 nF S IGES 150 ICES 0.6 2.4 1 nA VCE(sat) 2.7 3.3 3.2 3.9 mA VGE(th) 4.5 5.5 6.5 V Values typ. max. Unit 2 Oct-20-1997 BSM 35 GD 120 DN2 Electrical Characteristics, at Tj = 25 °C, unless otherwise specified Parameter Symbol min. Switching Characteristics, Inductive Load at Tj = 125 °C Turn-on delay time VCC = 600 V, VGE = 15 V, IC = 35 A RGon = 39 Ω Rise time VCC = 600 V, VGE = 15 V, IC = 35 A RGon = 39 Ω Turn-off delay time VCC = 600 V, VGE = -15 V, IC = 35 A RGoff = 39 Ω Fall time VCC = 600 V, VGE = -15 V, IC = 35 A RGoff = 39 Ω Free-Wheel Diode Diode forward voltage IF = 35 A, VGE = 0 V, Tj = 25 °C IF = 35 A, VGE = 0 V, Tj = 125 °C Reverse recovery time IF = 35 A, VR = -600 V, VGE = 0 V diF/dt = -800 A/µs, Tj = 125 °C Reverse recovery charge IF = 35 A, VR = -600 V, VGE = 0 V diF/dt = -800 A/µs Tj = 25 °C Tj = 125 °C 2 5 Qrr 0.25 µC trr VF 2.3 1.9 2.9 µs V 50 75 tf 400 600 td(off) 60 120 tr 60 120 td(on) ns Values typ. max. Unit 3 Oct-20-1997 BSM 35 GD 120 DN2 Power dissipation Ptot = ƒ(TC) parameter: Tj ≤ 150 °C 300 W 260 Ptot 240 220 200 180 160 140 120 100 80 60 40 20 0 0 20 40 60 80 100 120 °C 160 Safe operating area IC = ƒ(VCE) parameter: D = 0, TC = 25°C , Tj ≤ 150 °C 10 3 A IC 10 2 t = 18.0µs p 100 µs 10 1 1 ms 10 0 10 ms DC 10 -1 10 0 10 1 10 2 10 3 V TC VCE Collector current IC = ƒ(TC) parameter: VGE ≥ 15 V , Tj ≤ 150 °C 55 A IC 45 40 35 30 25 20 15 10 5 0 0 20 40 60 80 100 120 °C 160 Transient thermal impedance Zth JC = ƒ(tp) parameter: D = tp / T 10 0 K/W ZthJC 10 -1 IGBT 10 -2 D = 0.50 0.20 0.10 single pulse 0.05 0.02 0.01 10 -3 10 -4 -5 10 10 -4 10 -3 10 -2 10 -1 s 10 0 TC tp 4 Oct-20-1997 BSM 35 GD 120 DN2 Typ. output characteristics IC = f (VCE) parameter: tp = 80 µs, Tj = 25 °C 70 A 60 IC 55 50 45 40 35 30 25 20 15 10 5 0 0 1 2 3 V VCE 5 17V 15V 13V 11V 9V 7V Typ. output characteristics IC = f (VCE) parameter: tp = 80 µs, Tj = 125 °C 70 A 60 IC 55 50 45 40 35 30 25 20 15 10 5 0 0 1 2 3 V VCE 5 17V 15V 13V 11V 9V 7V Typ. transfer characteristics IC = f (VGE) parameter: tp = 80 µs, VCE = 20 V 70 A 60 IC 55 50 45 40 35 30 25 20 15 10 5 0 0 2 4 6 8 10 V 14 VGE 5 Oct-20-1997 BSM 35 GD 120 DN2 Typ. gate charge VGE = (QGate) parameter: IC puls = 35 A 20 V Typ. capacitances C = f (VCE) parameter: VGE = 0 V, f = 1 MHz 10 1 nF VGE 16 14 12 10 8 10 -1 6 4 2 0 0 40 80 120 160 nC 220 10 -2 0 5 10 15 20 25 30 V VCE 40 Coss Crss 600 V 800 V C 10 0 Ciss QGate Reverse biased safe operating area ICpuls = f(VCE) , Tj = 150°C parameter: VGE = 15 V 2.5 Short circuit safe operating area ICsc = f(VCE) , Tj = 150°C parameter: VGE = ± 15 V, tSC 10 µs, L < 50 nH 12 ICpuls/IC ICsc/IC 8 1.5 6 1.0 4 0.5 2 0.0 0 200 400 600 800 1000 1200 V 1600 VCE 0 0 200 400 600 800 1000 1200 V 1600 VCE 6 Oct-20-1997 BSM 35 GD 120 DN2 Typ. switching time I = f (IC) , inductive load , Tj = 125°C par.: VCE = 600 V, VGE = ± 15 V, RG = 39 10 3 Typ. switching time t = f (RG) , inductive load , Tj = 125°C par.: VCE = 600 V, VGE = ± 15 V, IC = 35 A 10 3 tdoff t tdoff ns t ns tdon tr 10 2 tr tdon tf 10 2 tf 10 1 0 10 20 30 40 50 60 A IC 80 10 1 0 20 40 60 80 100 120 140 RG 180 Typ. switching losses E = f (IC) , inductive load , Tj = 125°C par.: VCE = 600 V, VGE = ± 15 V, RG = 39 20 mWs E 16 14 12 10 8 Eoff 6 4 2 0 0 10 20 30 40 50 60 A IC 80 Eon Typ. switching losses E = f (RG) , inductive load , Tj = 125°C par.: VCE = 600V, VGE = ± 15 V, IC = 35 A 20 mWs E 16 14 Eon 12 10 8 6 4 2 0 0 20 40 60 80 100 120 140 RG 180 Eoff 7 Oct-20-1997 BSM 35 GD 120 DN2 Forward characteristics of fast recovery reverse diode IF = f(VF) parameter: Tj 70 A 60 IF 55 50 45 40 35 30 25 20 15 10 5 0 0.0 0.5 1.0 1.5 2.0 V VF 3.0 Tj=125°C Tj=25°C Transient thermal impedance Zth JC = (tp) parameter: D = tp / T 10 0 Diode K/W ZthJC 10 -1 D = 0.50 0.20 10 -2 0.10 0.05 single pulse 0.02 0.01 10 -3 -5 10 10 -4 10 -3 10 -2 10 -1 s 10 0 tp 8 Oct-20-1997 BSM 35 GD 120 DN2 Circuit Diagram Package Outlines Dimensions in mm Weight: 180 g 9 Oct-20-1997 Terms & Conditions of Usage Attention The present product data is exclusively subscribed to technically experienced staff. 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