DF200R07W2H3B77BPSA1

DF200R07W2H3_B77 EasyPACK™ 2B module EasyPACK™ 2B module with Trench/Fieldstop IGBT H3 and rapid diode and PressFIT / NTC Features • Electrical features - VCES = 650 V - IC nom = 100 A / ICRM = 200 A - Increased blocking voltage capability up to 650 V - Low inductive design - Low switching losses - Low VCE,sat • Mechanical features - Al2O3 substrate with low thermal resistance - Compact design - PressFIT contact technology - Rugged mounting due to integrated mounting clamps Potential applications • Three-level applications • Motor drives • Solar applications Product validation • Qualified for industrial applications according to the relevant tests of IEC 60747, 60749 and 60068 Description Datasheet www.infineon.com Please read the Important Notice and Warnings at the end of this document Revision 1.00 2021-11-15 DF200R07W2H3_B77 EasyPACK™ 2B module Table of contents Table of contents Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .1 Potential applications . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Product validation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Table of contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 1 Package . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2 IGBT, T1 / T4 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 3 Diode, D1 / D4 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .5 4 IGBT, T2 / T3 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5 5 Diode, D2 / D3 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .7 6 NTC-Thermistor . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .8 7 Characteristics diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 8 Circuit diagram . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16 9 Package outlines . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .17 10 Module label code . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 18 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 19 Disclaimer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20 Datasheet 2 Revision 1.00 2021-11-15 DF200R07W2H3_B77 EasyPACK™ 2B module 1 Package 1 Package Table 1 Insulation coordination Parameter Symbol Note or test condition Isolation test voltage VISOL Internal isolation RMS, f = 50 Hz, t = 1 min Values Unit 3.0 kV basic insulation (class 1, IEC 61140) Al2O3 Creepage distance dCreep terminal to heatsink 11.5 mm Creepage distance dCreep terminal to terminal 6.3 mm Clearance dClear terminal to heatsink 10.0 mm Clearance dClear terminal to terminal 5.0 mm Comparative tracking index CTI Relative thermal index (electrical) RTI Table 2 > 200 housing 140 °C Values Unit Characteristic values Parameter Symbol Note or test condition Min. Typ. Max. Stray inductance module LsCE Storage temperature Tstg -40 125 °C Mounting force per clamp F 40 80 N Weight G Note: 2 Table 3 41 39 g Values Unit 650 V 50 A 40 A 100 A ±20 V The current under continuous operation is limited to 25A rms per connector pin. IGBT, T1 / T4 Maximum rated values Parameter Symbol Note or test condition Collector-emitter voltage VCES Implemented collector current ICN Continuous DC collector current ICDC Tvj max = 175 °C Repetitive peak collector current ICRM tP = 1 ms Gate-emitter peak voltage VGES Datasheet nH Tvj = 25 °C 3 TH = 65 °C Revision 1.00 2021-11-15 DF200R07W2H3_B77 EasyPACK™ 2B module 2 IGBT, T1 / T4 Table 4 Characteristic values Parameter Symbol Note or test condition Values Min. Collector-emitter saturation voltage Gate threshold voltage Gate charge VCE sat VGEth QG IC = 50 A, VGE = 15 V Unit Typ. Max. Tvj = 25 °C 1.68 2.00 V Tvj = 125 °C 1.86 Tvj = 150 °C 1.89 6.45 V IC = 0.8 mA, VCE = VGE, Tvj = 25 °C 5.05 VGE = ±15 V, VCE = 400 V 5.75 0.5 µC 0 Ω Internal gate resistor RGint Tvj = 25 °C Input capacitance Cies f = 100 kHz, Tvj = 25 °C, VCE = 650 V, VGE = 0 V 2.95 nF Reverse transfer capacitance Cres f = 100 kHz, Tvj = 25 °C, VCE = 650 V, VGE = 0 V 0.096 nF Collector-emitter cut-off current ICES VCE = 650 V, VGE = 0 V Gate-emitter leakage current IGES VCE = 650 V, VGE = 0 V, Tvj = 25 °C Turn-on delay time (inductive load) tdon IC = 50 A, VCE = 300 V, VGE = ±15 V, RGon = 2.2 Ω Rise time (inductive load) Turn-off delay time (inductive load) Fall time (inductive load) Turn-on energy loss per pulse Turn-off energy loss per pulse tr tdoff tf Eon Eoff Thermal resistance, junction to heat sink RthJH Temperature under switching conditions Tvj op Datasheet Tvj = 25 °C Tvj = 25 °C 0.014 Tvj = 125 °C 0.015 Tvj = 150 °C 0.015 Tvj = 25 °C 0.008 Tvj = 125 °C 0.010 Tvj = 150 °C 0.011 Tvj = 25 °C 0.124 Tvj = 125 °C 0.147 Tvj = 150 °C 0.150 Tvj = 25 °C 0.038 Tvj = 125 °C 0.073 Tvj = 150 °C 0.084 IC = 50 A, VCE = 300 V, Lσ = 35 nH, VGE = ±15 V, RGon = 2.2 Ω, di/dt = 4100 A/µs (Tvj = 150 °C) Tvj = 25 °C 0.244 Tvj = 125 °C 0.406 Tvj = 150 °C 0.451 IC = 50 A, VCE = 300 V, Lσ = 35 nH, VGE = ±15 V, RGoff = 2.2 Ω, dv/dt = 5100 V/µs (Tvj = 150 °C) Tvj = 25 °C 0.593 Tvj = 125 °C 0.94 Tvj = 150 °C 1.06 IC = 50 A, VCE = 300 V, VGE = ±15 V, RGon = 2.2 Ω IC = 50 A, VCE = 300 V, VGE = ±15 V, RGoff = 2.2 Ω IC = 50 A, VCE = 300 V, VGE = ±15 V, RGoff = 2.2 Ω per IGBT 0.021 mA 100 nA µs µs µs µs mJ mJ 1.19 -40 4 K/W 150 °C Revision 1.00 2021-11-15 DF200R07W2H3_B77 EasyPACK™ 2B module 3 Diode, D1 / D4 3 Diode, D1 / D4 Table 5 Maximum rated values Parameter Symbol Note or test condition Repetitive peak reverse voltage VRRM Continuous DC forward current IF Repetitive peak forward current IFRM I2t - value I2t Table 6 Values Unit 650 V 75 A 150 A Tvj = 125 °C 680 A²s Tvj = 150 °C 660 Tvj = 25 °C tP = 1 ms VR = 0 V, tP = 10 ms Characteristic values Parameter Symbol Note or test condition Values Min. Forward voltage VF Peak reverse recovery current IRM Recovered charge Qr Reverse recovery energy Erec Thermal resistance, junction to heat sink RthJH Temperature under switching conditions Tvj op 4 Table 7 Unit Typ. Max. Tvj = 25 °C 1.65 2.15 Tvj = 125 °C 1.55 Tvj = 150 °C 1.50 IF = 75 A, VR = 300 V, VGE = -15 V, -diF/dt = 3400 A/µs (Tvj = 150 °C) Tvj = 25 °C 63 Tvj = 125 °C 75 Tvj = 150 °C 79.1 IF = 75 A, VR = 300 V, VGE = -15 V, -diF/dt = 3400 A/µs (Tvj = 150 °C) Tvj = 25 °C 2 Tvj = 125 °C 3.8 Tvj = 150 °C 4.5 IF = 75 A, VR = 300 V, VGE = -15 V, -diF/dt = 3400 A/µs (Tvj = 150 °C) Tvj = 25 °C 0.433 Tvj = 125 °C 0.813 Tvj = 150 °C 0.959 IF = 75 A per diode A µC mJ 1.16 -40 V K/W 150 °C IGBT, T2 / T3 Maximum rated values Parameter Collector-emitter voltage Symbol Note or test condition VCES Tvj = 25 °C Values Unit 650 V (table continues...) Datasheet 5 Revision 1.00 2021-11-15 DF200R07W2H3_B77 EasyPACK™ 2B module 4 IGBT, T2 / T3 Table 7 (continued) Maximum rated values Parameter Symbol Note or test condition Implemented collector current ICN Continuous DC collector current ICDC Tvj max = 175 °C Repetitive peak collector current ICRM tP = 1 ms Gate-emitter peak voltage VGES Table 8 TH = 65 °C Values Unit 100 A 70 A 200 A ±20 V Values Unit Characteristic values Parameter Symbol Note or test condition Min. Collector-emitter saturation voltage Gate threshold voltage Gate charge VCE sat VGEth QG IC = 100 A, VGE = 15 V Typ. Max. Tvj = 25 °C 1.46 1.90 V Tvj = 125 °C 1.61 Tvj = 150 °C 1.68 6.45 V IC = 1.6 mA, VCE = VGE, Tvj = 25 °C VGE = ±15 V, VCE = 400 V 5.05 5.75 1.1 µC 2 Ω Internal gate resistor RGint Tvj = 25 °C Input capacitance Cies f = 100 kHz, Tvj = 25 °C, VCE = 650 V, VGE = 0 V 6.2 nF Reverse transfer capacitance Cres f = 100 kHz, Tvj = 25 °C, VCE = 650 V, VGE = 0 V 0.19 nF Collector-emitter cut-off current ICES VCE = 650 V, VGE = 0 V Gate-emitter leakage current IGES VCE = 650 V, VGE = 0 V, Tvj = 25 °C Turn-on delay time (inductive load) tdon IC = 100 A, VCE = 300 V, VGE = ±15 V, RGon = 2.2 Ω Rise time (inductive load) Turn-off delay time (inductive load) Fall time (inductive load) tr tdoff tf IC = 100 A, VCE = 300 V, VGE = ±15 V, RGon = 2.2 Ω IC = 100 A, VCE = 300 V, VGE = ±15 V, RGoff = 2.2 Ω IC = 100 A, VCE = 300 V, VGE = ±15 V, RGoff = 2.2 Ω Tvj = 25 °C Tvj = 25 °C 0.072 Tvj = 125 °C 0.082 Tvj = 150 °C 0.083 Tvj = 25 °C 0.024 Tvj = 125 °C 0.027 Tvj = 150 °C 0.027 Tvj = 25 °C 0.185 Tvj = 125 °C 0.215 Tvj = 150 °C 0.220 Tvj = 25 °C 0.027 Tvj = 125 °C 0.063 Tvj = 150 °C 0.084 0.016 mA 100 nA µs µs µs µs (table continues...) Datasheet 6 Revision 1.00 2021-11-15 DF200R07W2H3_B77 EasyPACK™ 2B module 5 Diode, D2 / D3 Table 8 (continued) Characteristic values Parameter Symbol Note or test condition Values Min. Turn-on energy loss per pulse Turn-off energy loss per pulse Eon Eoff Thermal resistance, junction to heat sink RthJH Temperature under switching conditions Tvj op 5 IC = 100 A, VCE = 300 V, Lσ = 35 nH, VGE = ±15 V, RGon = 2.2 Ω, di/dt = 3600 A/µs (Tvj = 150 °C) IC = 100 A, VCE = 300 V, Lσ = 35 nH, VGE = ±15 V, RGoff = 2.2 Ω, dv/dt = 5300 V/µs (Tvj = 150 °C) Typ. Tvj = 25 °C 0.981 Tvj = 125 °C 1.42 Tvj = 150 °C 1.53 Tvj = 25 °C 1.37 Tvj = 125 °C 2.06 Tvj = 150 °C 2.3 per IGBT Unit Max. mJ mJ 0.830 -40 K/W 150 °C Diode, D2 / D3 Table 9 Maximum rated values Parameter Symbol Note or test condition Repetitive peak reverse voltage VRRM Continuous DC forward current IF Repetitive peak forward current IFRM I2t - value Table 10 I2t Values Unit 650 V 50 A 100 A Tvj = 125 °C 390 A²s Tvj = 150 °C 370 Tvj = 25 °C tP = 1 ms VR = 0 V, tP = 10 ms Characteristic values Parameter Symbol Note or test condition Values Min. Forward voltage Peak reverse recovery current VF IRM IF = 50 A IF = 50 A, VR = 300 V, VGE = -15 V, -diF/dt = 4100 A/µs (Tvj = 150 °C) Unit Typ. Max. Tvj = 25 °C 1.65 2.15 Tvj = 125 °C 1.55 Tvj = 150 °C 1.50 Tvj = 25 °C 59.9 Tvj = 125 °C 72.3 Tvj = 150 °C 76.6 V A (table continues...) Datasheet 7 Revision 1.00 2021-11-15 DF200R07W2H3_B77 EasyPACK™ 2B module 6 NTC-Thermistor Table 10 (continued) Characteristic values Parameter Symbol Note or test condition Values Min. Recovered charge Qr Reverse recovery energy Erec Thermal resistance, junction to heat sink RthJH Temperature under switching conditions Tvj op 6 Typ. IF = 50 A, VR = 300 V, VGE = -15 V, -diF/dt = 4100 A/µs (Tvj = 150 °C) Tvj = 25 °C 1.49 Tvj = 125 °C 2.75 Tvj = 150 °C 3.18 IF = 50 A, VR = 300 V, VGE = -15 V, -diF/dt = 4100 A/µs (Tvj = 150 °C) Tvj = 25 °C 0.332 Tvj = 125 °C 0.638 Tvj = 150 °C 0.734 per diode Unit Max. µC mJ 1.64 -40 K/W 150 °C NTC-Thermistor Table 11 Characteristic values Parameter Symbol Note or test condition Values Min. Rated resistance R25 Deviation of R100 ΔR/R Power dissipation P25 TNTC = 25 °C Typ. Unit Max. 5 TNTC = 100 °C, R100 = 493 Ω -5 TNTC = 25 °C kΩ 5 % 20 mW B-value B25/50 R2 = R25 exp[B25/50(1/T2-1/(298,15 K))] 3375 K B-value B25/80 R2 = R25 exp[B25/80(1/T2-1/(298,15 K))] 3411 K B-value B25/100 R2 = R25 exp[B25/100(1/T2-1/(298,15 K))] 3433 K Note: Datasheet Specification according to the valid application note. 8 Revision 1.00 2021-11-15 DF200R07W2H3_B77 EasyPACK™ 2B module 7 Characteristics diagrams 7 Characteristics diagrams Output characteristic (typical), IGBT, T1 / T4 IC = f(VCE) VGE = 15 V Output characteristic field (typical), IGBT, T1 / T4 IC = f(VCE) Tvj = 150 °C 100 100 90 90 80 80 70 70 60 60 50 50 40 40 30 30 20 20 10 10 0 0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 0.0 Transfer characteristic (typical), IGBT, T1 / T4 IC = f(VGE) VCE = 20 V 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 Switching losses (typical), IGBT, T1 / T4 E = f(IC) RGoff = 2.2 Ω, RGon = 2.2 Ω, VCE = 300 V, VGE = +/- 15 V 100 2.0 90 1.8 80 1.6 70 1.4 60 1.2 50 1.0 40 0.8 30 0.6 20 0.4 10 0.2 0 0.0 5 Datasheet 0.5 6 7 8 9 10 11 12 0 9 10 20 30 40 50 60 70 80 90 100 Revision 1.00 2021-11-15 DF200R07W2H3_B77 EasyPACK™ 2B module 7 Characteristics diagrams Switching losses (typical), IGBT, T1 / T4 E = f(RG) IC = 50 A, VCE = 300 V, VGE = +/- 15 V Switching times (typical), IGBT, T1 / T4 t = f(IC) RGoff = 2.2 Ω, RGon = 2.2 Ω, VCE = 300 V, VGE = +/- 15 V, Tvj = 150 °C 1 3.0 2.5 0.1 2.0 1.5 1.0 0.01 0.5 0.0 0.001 0 2 4 6 8 10 12 14 16 18 20 22 24 0 Switching times (typical), IGBT, T1 / T4 t = f(RG) IC = 50 A, VCE = 300 V, VGE = +/- 15 V, Tvj = 150 °C 10 20 30 40 50 60 70 80 90 100 Transient thermal impedance, IGBT, T1 / T4 Zth = f(t) 1 10 1 0.1 0.1 0.01 0 Datasheet 2 4 6 8 0.01 0.001 10 12 14 16 18 20 22 24 10 0.01 0.1 1 10 Revision 1.00 2021-11-15 DF200R07W2H3_B77 EasyPACK™ 2B module 7 Characteristics diagrams Reverse bias safe operating area (RBSOA), IGBT, T1 / T4 IC = f(VCE) RGoff = 2.2 Ω, VGE = ±15 V, Tvj = 150 °C 120 Forward characteristic (typical), Diode, D1 / D4 IF = f(VF) 150 110 100 125 90 80 100 70 60 75 50 40 50 30 20 25 10 0 0 0 100 200 300 400 500 600 700 0.0 Transient thermal impedance, Diode, D1 / D4 Zth = f(t) 0.5 1.0 1.5 2.0 2.5 Switching losses (typical), Diode, D1 / D4 Erec = f(IF) RGon = 2.2 Ω, VCE = 300 V 10 1.6 1.4 1.2 1 1.0 0.8 0.6 0.1 0.4 0.2 0.01 0.001 Datasheet 0.0 0.01 0.1 1 10 0 100 11 25 50 75 100 125 150 Revision 1.00 2021-11-15 DF200R07W2H3_B77 EasyPACK™ 2B module 7 Characteristics diagrams Switching losses (typical), Diode, D1 / D4 Erec = f(RG) VCE = 300 V, IF = 75 A Output characteristic (typical), IGBT, T2 / T3 IC = f(VCE) VGE = 15 V 1.4 200 180 1.2 160 1.0 140 120 0.8 100 0.6 80 60 0.4 40 0.2 20 0.0 0 0 2 4 6 8 10 12 14 16 18 20 22 24 0.0 Output characteristic field (typical), IGBT, T2 / T3 IC = f(VCE) Tvj = 150 °C 1.0 1.5 2.0 2.5 3.0 Transfer characteristic (typical), IGBT, T2 / T3 IC = f(VGE) VCE = 20 V 200 200 180 180 160 160 140 140 120 120 100 100 80 80 60 60 40 40 20 20 0 0 0.0 Datasheet 0.5 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 5 12 6 7 8 9 10 11 12 Revision 1.00 2021-11-15 DF200R07W2H3_B77 EasyPACK™ 2B module 7 Characteristics diagrams Switching losses (typical), IGBT, T2 / T3 E = f(IC) RGoff = 2.2 Ω, RGon = 2.2 Ω, VCE = 300 V, VGE = +/- 15 V Switching losses (typical), IGBT, T2 / T3 E = f(RG) IC = 100 A, VCE = 300 V, VGE = +/- 15 V 5.0 8 4.5 7 4.0 6 3.5 5 3.0 2.5 4 2.0 3 1.5 2 1.0 1 0.5 0.0 0 0 20 40 60 80 100 120 140 160 180 200 0 Switching times (typical), IGBT, T2 / T3 t = f(IC) RGoff = 2.2 Ω, RGon = 2.2 Ω, VCE = 300 V, VGE = +/- 15 V, Tvj = 150 °C 10 2 4 6 8 10 12 14 16 18 20 22 24 Switching times (typical), IGBT, T2 / T3 t = f(RG) IC = 100 A, VCE = 300 V, VGE = +/- 15 V, Tvj = 150 °C 1 1 0.1 0.1 0.01 0.001 0.01 0 Datasheet 20 40 60 80 100 120 140 160 180 200 0 13 2 4 6 8 10 12 14 16 18 20 22 24 Revision 1.00 2021-11-15 DF200R07W2H3_B77 EasyPACK™ 2B module 7 Characteristics diagrams Transient thermal impedance, IGBT, T2 / T3 Zth = f(t) Reverse bias safe operating area (RBSOA), IGBT, T2 / T3 IC = f(VCE) RGoff = 2.2 Ω, VGE = ±15 V, Tvj = 150 °C 1 250 225 200 175 150 125 0.1 100 75 50 25 0.01 0.001 0 0.01 0.1 1 0 10 Forward characteristic (typical), Diode, D2 / D3 IF = f(VF) 100 200 300 400 500 600 700 Transient thermal impedance, Diode, D2 / D3 Zth = f(t) 10 100 90 80 70 60 50 1 40 30 20 10 0 0.0 Datasheet 0.5 1.0 1.5 2.0 0.1 0.001 2.5 14 0.01 0.1 1 10 Revision 1.00 2021-11-15 DF200R07W2H3_B77 EasyPACK™ 2B module 7 Characteristics diagrams Switching losses (typical), Diode, D2 / D3 Erec = f(IF) RGon = 2.2 Ω, VCE = 300 V Switching losses (typical), Diode, D2 / D3 Erec = f(RG) VCE = 300 V, IF = 50 A 1.6 1.0 0.9 1.4 0.8 1.2 0.7 1.0 0.6 0.8 0.5 0.4 0.6 0.3 0.4 0.2 0.2 0.1 0.0 0.0 0 10 20 30 40 50 60 70 80 90 100 0 2 4 6 8 10 12 14 16 18 20 22 24 Temperature characteristic (typical), NTC-Thermistor R = f(TNTC) 100000 10000 1000 100 0 Datasheet 25 50 75 100 125 150 15 Revision 1.00 2021-11-15 DF200R07W2H3_B77 EasyPACK™ 2B module 8 Circuit diagram 8 Circuit diagram Figure 1 Datasheet 16 Revision 1.00 2021-11-15 DF200R07W2H3_B77 EasyPACK™ 2B module 9 Package outlines 9 Package outlines Figure 2 Datasheet 17 Revision 1.00 2021-11-15 DF200R07W2H3_B77 EasyPACK™ 2B module 10 Module label code 10 Module label code Module label code Code format Data Matrix Barcode Code128 Encoding ASCII text Code Set A Symbol size 16x16 23 digits Standard IEC24720 and IEC16022 IEC8859-1 Code content Content Module serial number Module material number Production order number Date code (production year) Date code (production week) Digit 1–5 6 - 11 12 - 19 20 – 21 22 – 23 Example 71549 142846 55054991 15 30 Example 71549142846550549911530 71549142846550549911530 Figure 3 2 Datasheet 18 Revision 1.00 2021-11-15 DF200R07W2H3_B77 EasyPACK™ 2B module Revision history Revision history Document revision Date of release Description of changes 0.10 2021-06-30 Target datasheet 1.00 2021-11-15 Final datasheet Datasheet 19 Revision 1.00 2021-11-15 Trademarks All referenced product or service names and trademarks are the property of their respective owners. Edition 2021-11-15 Published by Infineon Technologies AG 81726 Munich, Germany © 2021 Infineon Technologies AG All Rights Reserved. Do you have a question about any aspect of this document? Email: erratum@infineon.com Document reference IFX-AAU256-002 IMPORTANT NOTICE The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics (“Beschaffenheitsgarantie”). With respect to any examples, hints or any typical values stated herein and/or any information regarding the application of the product, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation warranties of non-infringement of intellectual property rights of any third party. In addition, any information given in this document is subject to customer’s compliance with its obligations stated in this document and any applicable legal requirements, norms and standards concerning customer’s products and any use of the product of Infineon Technologies in customer’s applications. The data contained in this document is exclusively intended for technically trained staff. It is the responsibility of customer’s technical departments to evaluate the suitability of the product for the intended application and the completeness of the product information given in this document with respect to such application. WARNINGS Due to technical requirements products may contain dangerous substances. For information on the types in question please contact your nearest Infineon Technologies office. Except as otherwise explicitly approved by Infineon Technologies in a written document signed by authorized representatives of Infineon Technologies, Infineon Technologies’ products may not be used in any applications where a failure of the product or any consequences of the use thereof can reasonably be expected to result in personal injury.