FP25R12W1T7_B11
EasyPIM™ module
Preliminary
EasyPIM™ module with TRENCHSTOP™IGBT7 and Emitter Controlled 7 diode and PressFIT / NTC
Features
• Electrical features
- VCES = 1200 V
- IC nom = 25 A / ICRM = 50 A
- TRENCHSTOPTM IGBT7
- Overload operation up to 175°C
- Low VCEsat
• Mechanical features
- High power density
- PressFIT contact technology
- 2.5 kV AC 1 min insulation
- Al2O3 substrate with low thermal resistance
- Compact design
Potential applications
• Auxiliary inverters
• Air conditioning
• Motor drives
Product validation
• Qualified for industrial applications according to the relevant tests of IEC 60747, 60749 and 60068
Description
Datasheet
www.infineon.com
Please read the Important Notice and Warnings at the end of this document
0.10
2020-12-01
FP25R12W1T7_B11
EasyPIM™ module
Table of contents
Table of contents
Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .1
Potential applications . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
Product validation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
Table of contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2
1
Package . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
2
IGBT, Inverter . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
3
Diode, Inverter . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5
4
Diode, Rectifier . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7
5
IGBT, Brake-Chopper . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7
6
Diode, Brake-Chopper . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .9
7
NTC-Thermistor . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .10
8
Characteristics diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
9
Circuit diagram . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 18
10
Package outlines . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .19
11
Module label code . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20
Disclaimer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 21
Datasheet
2
0.10
2020-12-01
FP25R12W1T7_B11
EasyPIM™ module
1 Package
1
Package
Table 1
Insulation Coordination
Parameter
Symbol Note or test condition
Isolation test voltage
VISOL
Internal Isolation
RMS, f = 50 Hz,
t = 1 min
Values
Unit
2.5
kV
basic insulation (class 1, IEC 61140)
Al2O3
Creepage distance
dCreep
terminal to heatsink
11.5
mm
Creepage distance
dCreep
terminal to terminal
6.3
mm
Clearance
dClear
terminal to heatsink
10.0
mm
Clearance
dClear
terminal to terminal
5.0
mm
Comperative tracking index
CTI
RTI Elec.
RTI
Table 2
> 200
housing
140
°C
Values
Unit
Characteristic Values
Parameter
Symbol Note or test condition
Min.
Stray inductance module
LsCE
Typ.
Max.
30
nH
Module lead resistance,
terminals - chip
RAA'+CC'
TH=25°C, per switch
6
mΩ
Module lead resistance,
terminals - chip
RCC'+EE'
TH=25°C, per switch
8
mΩ
Storage temperature
Tstg
-40
125
°C
Mounting force per clamp
F
20
50
N
Weight
G
Note:
2
Table 3
g
Values
Unit
Tvj = 25 °C
1200
V
TH = 60 °C
25
A
50
A
±20
V
The current under continuous operation is limited to 25A rms per connector pin.
IGBT, Inverter
Maximum Rated Values
Parameter
Symbol Note or test condition
Collector-emitter voltage
VCES
Continous DC collector
current
ICDC
Tvj max = 175 °C
Repetitive peak collector
current
ICRM
tP = 1 ms
Gate-emitter peak voltage
VGES
Datasheet
24
3
0.10
2020-12-01
FP25R12W1T7_B11
EasyPIM™ module
2 IGBT, Inverter
Table 4
Characteristic Values
Parameter
Symbol Note or test condition
Values
Min.
Collector-emitter saturation
voltage
Gate threshold voltage
Gate charge
VCE sat
VGEth
QG
IC = 25 A,
VGE = 15 V
Unit
Typ.
Max.
Tvj = 25 °C
1.60
TBD
V
Tvj = 125 °C
1.74
Tvj = 175 °C
1.82
6.45
V
IC = 0.525 mA,
VCE = VGE,
Tvj = 25 °C
5.15
VGE = ±15 V,
VCE = 600 V
5.80
0.395
µC
0
Ω
Internal gate resistor
RGint
Tvj = 25 °C
Input capacitance
Cies
f = 100 kHz,
Tvj = 25 °C,
VCE = 25 V,
VGE = 0 V
4.77
nF
Reverse transfer capacitance
Cres
f = 100 kHz,
Tvj = 25 °C,
VCE = 25 V,
VGE = 0 V
0.017
nF
Collector-emitter cut-off
current
ICES
VCE = 1200 V,
VGE = 0 V
Gate-emitter leakage current
IGES
VCE = 0 V,
VGE = 20 V,
Tvj = 25 °C
Turn-on delay time
(inductive load)
tdon
IC = 25 A,
VCE = 600 V,
VGE = ±15 V,
RGon = 6.2 Ω
Rise time (inductive load)
Turn-off delay time
(inductive load)
Datasheet
tr
tdoff
Tvj = 25 °C
IC = 25 A,
VCE = 600 V,
VGE = ±15 V,
RGon = 6.2 Ω
IC = 25 A,
VCE = 600 V,
VGE = ±15 V,
RGoff = 6.2 Ω
4
Tvj = 25 °C
0.037
Tvj = 125 °C
0.039
Tvj = 175 °C
0.040
Tvj = 25 °C
0.020
Tvj = 125 °C
0.024
Tvj = 175 °C
0.025
Tvj = 25 °C
0.186
Tvj = 125 °C
0.291
Tvj = 175 °C
0.334
0.0056
mA
100
nA
µs
µs
µs
0.10
2020-12-01
FP25R12W1T7_B11
EasyPIM™ module
3 Diode, Inverter
Table 4
Characteristic Values (continued)
Parameter
Symbol Note or test condition
Values
Min.
Fall time (inductive load)
Turn-on energy loss per
pulse
Turn-off energy loss per
pulse
SC data
tf
Eon
Eoff
ISC
Thermal resistance, junction
to heatsink
RthJH
Temperature under
switching conditions
Tvj op
Note:
3
Table 5
IC = 25 A,
VCE = 600 V,
VGE = ±15 V,
RGoff = 6.2 Ω
Tvj = 25 °C
0.173
Tvj = 125 °C
0.220
Tvj = 175 °C
0.285
IC = 25 A,
VCE = 600 V,
Lσ = 35 nH,
VGE = ±15 V,
RGon = 6.2 Ω,
di/dt = 950 A/µs
(Tvj = 175 °C)
Tvj = 25 °C
1.55
Tvj = 125 °C
2.1
Tvj = 175 °C
2.45
IC = 25 A,
VCE = 600 V,
Lσ = 35 nH,
VGE = ±15 V,
RGoff = 6.2 Ω,
dv/dt = 2900 V/µs
(Tvj = 175 °C)
Tvj = 25 °C
1.58
Tvj = 125 °C
2.45
Tvj = 175 °C
3.05
VGE ≤ 15 V,
VCC = 800 V,
VCEmax=VCES-LsCE*di/dt
tP ≤ 8 µs,
Tvj = 150 °C
80
tP ≤ 7 µs,
Tvj = 175 °C
75
per IGBT
Max.
µs
mJ
mJ
A
1.55
-40
K/W
175
°C
Tvj op > 150°C is allowed for operation at overload conditions. For detailed specifications, please refer to AN
2018-14.
Diode, Inverter
Maximum Rated Values
Parameter
Symbol Note or test condition
Repetitive peak reverse
voltage
VRRM
Continous DC forward
current
IF
Datasheet
Typ.
Unit
Tvj = 25 °C
5
Values
Unit
1200
V
25
A
0.10
2020-12-01
FP25R12W1T7_B11
EasyPIM™ module
3 Diode, Inverter
Table 5
Maximum Rated Values (continued)
Parameter
Symbol Note or test condition
Repetitive peak forward
current
I2t - value
Table 6
IFRM
tP = 1 ms
I2t
VR = 0 V,
tP = 10 ms
Values
Unit
50
A
Tvj = 125 °C
72.5
A²s
Tvj = 175 °C
63
Characteristic Values
Parameter
Symbol Note or test condition
Values
Min.
Forward voltage
Peak reverse recovery
current
Recovered charge
Reverse recovery energy
VF
IRM
Qr
Erec
Thermal resistance, junction
to heatsink
RthJH
Temperature under
switching conditions
Tvj op
Note:
Datasheet
Unit
Typ.
Max.
Tvj = 25 °C
1.83
TBD
Tvj = 125 °C
1.70
Tvj = 175 °C
1.63
IF = 25 A,
VR = 600 V,
VGE = -15 V,
-diF/dt = 950 A/µs
(Tvj = 175 °C)
Tvj = 25 °C
24.2
Tvj = 125 °C
32.4
Tvj = 175 °C
37.6
IF = 25 A,
VR = 600 V,
VGE = -15 V,
-diF/dt = 950 A/µs
(Tvj = 175 °C)
Tvj = 25 °C
2.25
Tvj = 125 °C
3.82
Tvj = 175 °C
4.95
IF = 25 A,
VR = 600 V,
VGE = -15 V,
-diF/dt = 950 A/µs
(Tvj = 175 °C)
Tvj = 25 °C
0.65
Tvj = 125 °C
1.41
Tvj = 175 °C
1.87
IF = 25 A,
VGE = 0 V
per diode
A
µC
mJ
2.04
-40
V
K/W
175
°C
Tvj op > 150°C is allowed for operation at overload conditions. For detailed specifications, please refer to AN
2018-14.
6
0.10
2020-12-01
FP25R12W1T7_B11
EasyPIM™ module
4 Diode, Rectifier
4
Diode, Rectifier
Table 7
Maximum Rated Values
Parameter
Symbol Note or test condition
Values
Unit
Repetitive peak reverse
voltage
VRRM
Tvj = 25 °C
1600
V
Maximum RMS forward
current per chip
IFRMSM
TH = 100 °C
25
A
Maximum RMS current at
rectifier output
IRMSM
TH = 100 °C
25
A
IFSM
tP = 10 ms
Tvj = 25 °C
300
A
Tvj = 150 °C
245
Tvj = 25 °C
450
Tvj = 150 °C
300
Surge forward current
I2t - value
I2t
Table 8
tP = 10 ms
A²s
Characteristic Values
Parameter
Symbol Note or test condition
Values
Min.
Typ.
Unit
Max.
Forward voltage
VF
Tvj = 150 °C,
IF = 10 A
0.80
V
Reverse current
Ir
Tvj = 150 °C,
VR = 1600 V
1
mA
1.54
K/W
Thermal resistance, junction
to heatsink
RthJH
Temperature under
switching conditions
Tvj, op
5
Table 9
per diode
-40
°C
IGBT, Brake-Chopper
Maximum Rated Values
Parameter
Symbol Note or test condition
Collector-emitter voltage
VCES
Continous DC collector
current
ICDC
Tvj max = 175 °C
Repetitive peak collector
current
ICRM
tP = 1 ms
Gate-emitter peak voltage
VGES
Datasheet
150
7
Values
Unit
Tvj = 25 °C
1200
V
TH = 60 °C
25
A
50
A
±20
V
0.10
2020-12-01
FP25R12W1T7_B11
EasyPIM™ module
5 IGBT, Brake-Chopper
Table 10
Characteristic Values
Parameter
Symbol Note or test condition
Values
Min.
Collector-emitter saturation
voltage
Gate threshold voltage
Gate charge
VCE sat
VGEth
QG
IC = 25 A,
VGE = 15 V
Unit
Typ.
Max.
Tvj = 25 °C
1.60
TBD
V
Tvj = 125 °C
1.74
Tvj = 175 °C
1.82
6.45
V
IC = 0.525 mA,
VCE = VGE,
Tvj = 25 °C
5.15
VGE = ±15 V,
VCE = 600 V
5.80
0.395
µC
0
Ω
Internal gate resistor
RGint
Tvj = 25 °C
Input capacitance
Cies
f = 100 kHz,
Tvj = 25 °C,
VCE = 25 V,
VGE = 0 V
4.77
nF
Reverse transfer capacitance
Cres
f = 100 kHz,
Tvj = 25 °C,
VCE = 25 V,
VGE = 0 V
0.017
nF
Collector-emitter cut-off
current
ICES
VCE = 1200 V,
VGE = 0 V
Gate-emitter leakage current
IGES
VCE = 0 V,
VGE = 20 V,
Tvj = 25 °C
Turn-on delay time
(inductive load)
tdon
IC = 25 A,
VCE = 600 V,
VGE = ±15 V,
RGon = 10 Ω
Rise time (inductive load)
Turn-off delay time
(inductive load)
Datasheet
tr
tdoff
Tvj = 25 °C
IC = 25 A,
VCE = 600 V,
VGE = ±15 V,
RGon = 10 Ω
IC = 25 A,
VCE = 600 V,
VGE = ±15 V,
RGoff = 10 Ω
8
Tvj = 25 °C
0.058
Tvj = 125 °C
0.060
Tvj = 175 °C
0.061
Tvj = 25 °C
0.055
Tvj = 125 °C
0.057
Tvj = 175 °C
0.058
Tvj = 25 °C
0.205
Tvj = 125 °C
0.310
Tvj = 175 °C
0.353
0.0056
mA
100
nA
µs
µs
µs
0.10
2020-12-01
FP25R12W1T7_B11
EasyPIM™ module
6 Diode, Brake-Chopper
Table 10
Characteristic Values (continued)
Parameter
Symbol Note or test condition
Values
Min.
Fall time (inductive load)
Turn-on energy loss per
pulse
Turn-off energy loss per
pulse
SC data
tf
Eon
Eoff
ISC
Thermal resistance, junction
to heatsink
RthJH
Temperature under
switching conditions
Tvj op
Note:
6
Table 11
IC = 25 A,
VCE = 600 V,
VGE = ±15 V,
RGoff = 10 Ω
Tvj = 25 °C
0.173
Tvj = 125 °C
0.220
Tvj = 175 °C
0.285
IC = 25 A,
VCE = 600 V,
Lσ = 35 nH,
VGE = ±15 V,
RGon = 10 Ω,
di/dt = 320 A/µs
(Tvj = 175 °C)
Tvj = 25 °C
2.15
Tvj = 125 °C
2.65
Tvj = 175 °C
2.9
IC = 25 A,
VCE = 600 V,
Lσ = 35 nH,
VGE = ±15 V,
RGoff = 10 Ω,
dv/dt = 2900 V/µs
(Tvj = 175 °C)
Tvj = 25 °C
1.58
Tvj = 125 °C
2.45
Tvj = 175 °C
3.05
VGE ≤ 15 V,
VCC = 800 V,
VCEmax=VCES-LsCE*di/dt
tP ≤ 8 µs,
Tvj = 150 °C
80
tP ≤ 7 µs,
Tvj = 175 °C
75
per IGBT
Max.
µs
mJ
mJ
A
1.55
-40
K/W
175
°C
Tvj op > 150°C is allowed for operation at overload conditions. For detailed specifications, please refer to AN
2018-14.
Diode, Brake-Chopper
Maximum Rated Values
Parameter
Symbol Note or test condition
Repetitive peak reverse
voltage
VRRM
Continous DC forward
current
IF
Datasheet
Typ.
Unit
Tvj = 25 °C
9
Values
Unit
1200
V
10
A
0.10
2020-12-01
FP25R12W1T7_B11
EasyPIM™ module
7 NTC-Thermistor
Table 11
Maximum Rated Values (continued)
Parameter
Symbol Note or test condition
Repetitive peak forward
current
I2t - value
Table 12
IFRM
tP = 1 ms
I2t
VR = 0 V,
tP = 10 ms
Values
Unit
20
A
Tvj = 125 °C
27.5
A²s
Tvj = 175 °C
24
Characteristic Values
Parameter
Symbol Note or test condition
Values
Min.
Forward voltage
VF
Peak reverse recovery
current
Recovered charge
IRM
Qr
Reverse recovery energy
Erec
Thermal resistance, junction
to heatsink
RthJH
Temperature under
switching conditions
Tvj op
Note:
7
Typ.
Max.
Tvj = 25 °C
1.72
TBD
Tvj = 125 °C
1.59
Tvj = 175 °C
1.52
Tvj = 25 °C
8.1
Tvj = 125 °C
10.1
Tvj = 175 °C
11.7
IF = 10 A,
VR = 600 V,
-diF/dt = 300 A/µs
(Tvj = 175 °C)
Tvj = 25 °C
0.74
Tvj = 125 °C
1.37
Tvj = 175 °C
1.84
IF = 10 A,
VR = 600 V,
-diF/dt = 300 A/µs
(Tvj = 175 °C)
Tvj = 25 °C
0.26
Tvj = 125 °C
0.52
Tvj = 175 °C
0.72
IF = 10 A,
VGE = 0 V
IF = 10 A,
VR = 600 V,
-diF/dt = 300 A/µs
(Tvj = 175 °C)
per diode
A
µC
mJ
2.45
-40
V
K/W
175
°C
Tvj op > 150°C is allowed for operation at overload conditions. For detailed specifications, please refer to AN
2018-14.
NTC-Thermistor
Table 13
Parameter
Characteristic Values
Symbol Note or test condition
Values
Min.
Rated resistance
Datasheet
Unit
R25
TNTC = 25 °C
Typ.
5
10
Unit
Max.
kΩ
0.10
2020-12-01
FP25R12W1T7_B11
EasyPIM™ module
7 NTC-Thermistor
Table 13
Characteristic Values (continued)
Parameter
Symbol Note or test condition
Values
Min.
Deviation of R100
ΔR/R
Power dissipation
P25
TNTC = 100 °C,
R100 = 493 Ω
Typ.
-5
TNTC = 25 °C
Unit
Max.
5
%
20
mW
B-value
B25/50
R2 = R25 exp[B25/50(1/T2-1/(298,15 K))]
3375
K
B-value
B25/80
R2 = R25 exp[B25/80(1/T2-1/(298,15 K))]
3411
K
B-value
B25/100
R2 = R25 exp[B25/100(1/T2-1/(298,15 K))]
3433
K
Note:
Datasheet
Specification according to the valid application note.
11
0.10
2020-12-01
FP25R12W1T7_B11
EasyPIM™ module
8 Characteristics diagrams
8
Characteristics diagrams
output characteristic (typical), IGBT, Inverter
IC = f(VCE)
VGE = 15 V
output characteristic (typical), IGBT, Inverter
IC = f(VCE)
Tvj = 175 °C
50
50
45
45
40
40
35
35
30
30
25
25
20
20
15
15
10
10
5
5
0
0
0
0.5
1
1.5
2
2.5
3
3.5
4
0
transfer characteristic (typical), IGBT, Inverter
IC = f(VGE)
VCE = 20 V
1
1.5
2
2.5
3
3.5
4
4.5
5
switching losses (typical), IGBT, Inverter
E = f(IC)
RGoff = 6.2 Ω, RGon = 6.2 Ω, VCE = 600 V, VGE = ± 15 V
50
10
45
9
40
8
35
7
30
6
25
5
20
4
15
3
10
2
5
1
0
0
5
Datasheet
0.5
6
7
8
9
10
11
12
13
14
0
12
5
10
15
20
25
30
35
40
45
50
0.10
2020-12-01
FP25R12W1T7_B11
EasyPIM™ module
8 Characteristics diagrams
switching losses (typical), IGBT, Inverter
E = f(RG)
IC = 25 A, VCE = 600 V, VGE = ± 15 V
switching times (typical), IGBT, Inverter
t = f(IC)
RGoff = 6.2 Ω, RGon = 6.2 Ω, VCE = 600 V, VGE = ± 15 V, Tvj =
175 °C
10
10
9
8
1
7
6
5
0.1
4
3
0.01
2
1
0
0.001
0
10
20
30
40
50
60
70
0
switching times (typical), IGBT, Inverter
t = f(RG)
IC = 25 A, VCE = 600 V, VGE = ± 15 V, Tvj = 175 °C
5
10
15
20
25
30
35
40
45
50
dv/dt (typical), IGBT, Inverter
dv/dt = f(RG)
IC = 25 A, VCE = 600 V, VGE = ±15 V, Tvj = 25 °C
10
10
9
8
1
7
6
0.1
5
4
3
0.01
2
1
0.001
0
0
Datasheet
10
20
30
40
50
60
70
0
13
5
10
15
20
25
30
35
40
45
50
55
60
65
70
0.10
2020-12-01
FP25R12W1T7_B11
EasyPIM™ module
8 Characteristics diagrams
transient thermal impedance , IGBT, Inverter
Zth = f(t)
reverse bias safe operating area (RBSOA), IGBT,
Inverter
IC = f(VCE)
RGoff = 6.2 Ω, VGE = ±15 V, Tvj = 175 °C
10
60
55
50
45
40
1
35
30
25
20
0.1
15
10
5
0
0.01
0.001
0.01
0.1
1
0
10
capacity characteristic (typical), IGBT, Inverter
C = f(VCE)
VGE = 0 V, f = 100 kHz, Tvj = 25 °C
200
400
600
800
1000
1200
1400
gate charge characteristic (typical), IGBT, Inverter
VGE = f(QG)
IC = 25 A, Tvj = 25 °C
100
15
12
10
9
6
1
3
0
0.1
-3
-6
0.01
-9
-12
0.001
-15
0
Datasheet
10
20
30
40
50
60
70
80
90
100
0
14
0.1
0.2
0.3
0.4
0.10
2020-12-01
FP25R12W1T7_B11
EasyPIM™ module
8 Characteristics diagrams
forward characteristic (typical), Diode, Inverter
IF = f(VF)
switching losses (typical), Diode, Inverter
Erec = f(IF)
RGon = 6.2 Ω, VCE = 600 V
50
2.5
45
40
2
35
30
1.5
25
20
1
15
10
0.5
5
0
0
0
0.5
1
1.5
2
2.5
0
switching losses (typical), Diode, Inverter
Erec = f(RG)
VCE = 600 V, IF = 25 A
5
10
15
20
25
30
35
40
45
50
transient thermal impedance , Diode, Inverter
Zth = f(t)
2.5
10
2
1
1.5
1
0.1
0.5
0
0.01
0
Datasheet
10
20
30
40
50
60
70
0.001
15
0.01
0.1
1
10
0.10
2020-12-01
FP25R12W1T7_B11
EasyPIM™ module
8 Characteristics diagrams
forward characteristic (typical), Diode, Rectifier
IF = f(VF)
transient thermal impedance , Diode, Rectifier
Zth = f(t)
20
10
18
16
14
1
12
10
8
0.1
6
4
2
0
0.01
0
0.2
0.4
0.6
0.8
1
1.2
0.001
output characteristic (typical), IGBT, Brake-Chopper
IC = f(VCE)
VGE = 15 V
20
45
18
40
16
35
14
30
12
25
10
20
8
15
6
10
4
5
2
1
10
0
0
Datasheet
0.1
forward characteristic (typical), Diode, BrakeChopper
IF = f(VF)
50
0
0.01
0.5
1
1.5
2
2.5
3
3.5
4
0
16
0.5
1
1.5
2
2.5
0.10
2020-12-01
FP25R12W1T7_B11
EasyPIM™ module
8 Characteristics diagrams
temperature characteristic (typical), NTC-Thermistor
R = f(TNTC)
100000
10000
1000
100
10
0
Datasheet
25
50
75
100
125
150
175
17
0.10
2020-12-01
FP25R12W1T7_B11
EasyPIM™ module
9 Circuit diagram
9
Circuit diagram
J
Figure 2
Datasheet
18
0.10
2020-12-01
FP25R12W1T7_B11
EasyPIM™ module
10 Package outlines
10
Package outlines
Infineon
Figure 3
Datasheet
19
0.10
2020-12-01
FP25R12W1T7_B11
EasyPIM™ module
11 Module label code
11
Module label code
Module label code
Code format
Data Matrix
Barcode Code128
Encoding
ASCII text
Code Set A
Symbol size
16x16
23 digits
Standard
IEC24720 and IEC16022
IEC8859-1
Code content
Content
Module serial number
Module material number
Production order number
Date code (production year)
Date code (production week)
Digit
1–5
6 - 11
12 - 19
20 – 21
22 – 23
Example
71549
142846
55054991
15
30
Example
71549142846550549911530
71549142846550549911530
Figure 4
2
Datasheet
20
0.10
2020-12-01
Trademarks
All referenced product or service names and trademarks are the property of their respective owners.
Edition 2020-12-01
Published by
Infineon Technologies AG
81726 Munich, Germany
© 2020 Infineon Technologies AG
All Rights Reserved.
Do you have a question about any
aspect of this document?
Email: erratum@infineon.com
Document reference
IFX-
IMPORTANT NOTICE
The information given in this document shall in no
event be regarded as a guarantee of conditions or
characteristics (“Beschaffenheitsgarantie”) .
With respect to any examples, hints or any typical
values stated herein and/or any information regarding
the application of the product, Infineon Technologies
hereby disclaims any and all warranties and liabilities
of any kind, including without limitation warranties of
non-infringement of intellectual property rights of any
third party.
In addition, any information given in this document is
subject to customer’s compliance with its obligations
stated in this document and any applicable legal
requirements, norms and standards concerning
customer’s products and any use of the product of
Infineon Technologies in customer’s applications.
The data contained in this document is exclusively
intended for technically trained staff. It is the
responsibility of customer’s technical departments to
evaluate the suitability of the product for the intended
application and the completeness of the product
information given in this document with respect to such
application.
Please note that this product is not qualified
according to the AEC Q100 or AEC Q101 documents
of the Automotive Electronics Council.
WARNINGS
Due to technical requirements products may contain
dangerous substances. For information on the types
in question please contact your nearest Infineon
Technologies office.
Except as otherwise explicitly approved by Infineon
Technologies in a written document signed by
authorized representatives of Infineon Technologies,
Infineon Technologies’ products may not be used in
any applications where a failure of the product or
any consequences of the use thereof can reasonably
be expected to result in personal injury.