FS3L100R07W3S5B11BPSA1

FS3L100R07W3S5_B11 EasyPACK™ module EasyPACK™ module with TRENCHSTOP™ 5 and Emitter Controlled 3 diode and PressFIT / NTC Features • Electrical features - VCES = 650 V - IC nom = 100 A / ICRM = 200 A - Low switching losses • Mechanical features - Al2O3 substrate with low thermal resistance - Integrated NTC temperature sensor - PressFIT contact technology Potential applications • Solar applications • 3-level-applications Product validation • Qualified for industrial applications according to the relevant tests of IEC 60747, 60749 and 60068 Description J Datasheet www.infineon.com Please read the Important Notice and Warnings at the end of this document 1.00 2021-04-22 FS3L100R07W3S5_B11 EasyPACK™ module Table of contents Table of contents Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .1 Potential applications . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Product validation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Table of contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 1 Package . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2 IGBT,3-Level . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 3 IGBT, Inverter . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5 4 Diode, 3-Level . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 5 Diode, Inverter . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7 6 NTC-Thermistor . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .8 7 Characteristics diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 8 Circuit diagram . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17 9 Package outlines . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .17 10 Module label code . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 18 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 19 Disclaimer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20 Datasheet 2 1.00 2021-04-22 FS3L100R07W3S5_B11 EasyPACK™ module 1 Package 1 Package Table 1 Insulation coordination Parameter Symbol Note or test condition Isolation test voltage VISOL Internal Isolation RMS, f = 50 Hz, t = 1 min basic insulation (class 1, IEC 61140) Values Unit 3.0 kV Al2O3 Creepage distance dCreep terminal to heatsink 9.6 mm Creepage distance dCreep terminal to terminal 6.8 mm Clearance dClear terminal to heatsink 9.4 mm Clearance dClear terminal to terminal 5.5 mm Comparative tracking index CTI RTI Elec. RTI Table 2 > 400 housing Symbol Note or test condition Min. Stray inductance module Module lead resistance, terminals - chip LsCE RCC'+EE' Storage temperature M Weight G Table 3 TH=25°C, per switch Tstg Mounting torque for modul mounting 2 Values Unit - Mounting according to M5, Screw valid application note Typ. Max. 28 nH 1.6 mΩ -40 125 °C 1.3 1.5 Nm 78 g Values Unit 650 V 100 A 70 A 200 A ±20 V The current under continuous operation is limited to 25 A rms per connector pin. IGBT,3-Level Maximum rated values Parameter Symbol Note or test condition Collector-emitter voltage VCES Implemented collector current ICN Continous DC collector current ICDC Tvj max = 175 °C Repetitive peak collector current ICRM tP = 1 ms Gate-emitter peak voltage VGES Datasheet °C Characteristic values Parameter Note: 140 Tvj = 25 °C 3 TH = 65 °C 1.00 2021-04-22 FS3L100R07W3S5_B11 EasyPACK™ module 2 IGBT,3-Level Table 4 Characteristic values Parameter Symbol Note or test condition Values Min. Collector-emitter saturation voltage Gate threshold voltage Gate charge VCE sat VGEth QG IC = 50 A, VGE = 15 V Unit Typ. Max. Tvj = 25 °C 1.17 1.38 V Tvj = 125 °C 1.20 Tvj = 150 °C 1.21 4.75 V IC = 1 mA, VCE = VGE, Tvj = 25 °C VGE = ±15 V, VCE = 400 V 3.25 4 0.42 µC 0 Ω Internal gate resistor RGint Tvj = 25 °C Input capacitance Cies f = 100 kHz, Tvj = 25 °C, VCE = 25 V, VGE = 0 V 7.1 nF Reverse transfer capacitance Cres f = 100 kHz, Tvj = 25 °C, VCE = 25 V, VGE = 0 V 0.025 nF Collector-emitter cut-off current ICES VCE = 650 V, VGE = 0 V Gate-emitter leakage current IGES VCE = 0 V, VGE = 20 V, Tvj = 25 °C Turn-on delay time (inductive load) tdon IC = 50 A, VCE = 300 V, VGE = ±15 V, RGon = 8.2 Ω Rise time (inductive load) Turn-off delay time (inductive load) Fall time (inductive load) Turn-on energy loss per pulse Turn-off energy loss per pulse SC data Thermal resistance, junction to heatsink Datasheet tr tdoff tf Eon Eoff ISC RthJH Tvj = 25 °C 0.007 mA 100 nA Tvj = 25 °C 0.026 Tvj = 125 °C 0.028 Tvj = 150 °C 0.028 Tvj = 25 °C 0.011 Tvj = 125 °C 0.012 Tvj = 150 °C 0.012 Tvj = 25 °C 0.140 Tvj = 125 °C 0.170 Tvj = 150 °C 0.180 Tvj = 25 °C 0.020 Tvj = 125 °C 0.050 Tvj = 150 °C 0.050 IC = 50 A, VCE = 300 V, Lσ = 35 nH, VGE = ±15 V, RGon = 8.2 Ω, di/dt = 2900 A/µs (Tvj = 150 °C) Tvj = 25 °C 0.45 Tvj = 125 °C 0.66 Tvj = 150 °C 0.72 IC = 50 A, VCE = 300 V, Lσ = 35 nH, VGE = ±15 V, RGoff = 8.2 Ω, dv/dt = 4500 V/µs (Tvj = 150 °C) Tvj = 25 °C 0.65 Tvj = 125 °C 0.92 Tvj = 150 °C 1.02 VGE ≤ 15 V, VCC = 360 V, VCEmax=VCES-LsCE*di/dt tP ≤ 0 µs, Tvj = 150 °C 800 A 0.886 K/W IC = 50 A, VCE = 300 V, VGE = ±15 V, RGon = 8.2 Ω IC = 50 A, VCE = 300 V, VGE = ±15 V, RGoff = 8.2 Ω IC = 50 A, VCE = 300 V, VGE = ±15 V, RGoff = 8.2 Ω per IGBT 4 µs µs µs µs mJ mJ 1.00 2021-04-22 FS3L100R07W3S5_B11 EasyPACK™ module 3 IGBT, Inverter Table 4 Characteristic values (continued) Parameter Symbol Note or test condition Values Min. Temperature under switching conditions 3 Tvj op Typ. -40 Unit Max. 150 °C IGBT, Inverter Table 5 Maximum rated values Parameter Symbol Note or test condition Collector-emitter voltage VCES Implemented collector current ICN Continous DC collector current ICDC Tvj max = 175 °C Repetitive peak collector current ICRM tP = 1 ms Gate-emitter peak voltage VGES Table 6 Tvj = 25 °C TH = 65 °C Values Unit 650 V 75 A 75 A 150 A ±20 V Values Unit Characteristic values Parameter Symbol Note or test condition Min. Collector-emitter saturation voltage Gate threshold voltage Gate charge VCE sat VGEth QG IC = 50 A, VGE = 15 V Typ. Max. Tvj = 25 °C 0.99 1.43 V Tvj = 125 °C 0.94 Tvj = 150 °C 0.91 5.75 V IC = 1 mA, VCE = 20 V, Tvj = 25 °C VGE = ±15 V, VCE = 400 V 4.25 5 0.92 µC 0 Ω Internal gate resistor RGint Tvj = 25 °C Input capacitance Cies f = 100 kHz, Tvj = 25 °C, VCE = 25 V, VGE = 0 V 11.8 nF Reverse transfer capacitance Cres f = 100 kHz, Tvj = 25 °C, VCE = 25 V, VGE = 0 V 0.042 nF Collector-emitter cut-off current ICES VCE = 650 V, VGE = 0 V Gate-emitter leakage current IGES VCE = 0 V, VGE = 20 V, Tvj = 25 °C Turn-on delay time (inductive load) tdon IC = 50 A, VCE = 300 V, VGE = ±15 V, RGon = 8.2 Ω Datasheet 5 Tvj = 25 °C Tvj = 25 °C 0.053 Tvj = 125 °C 0.049 Tvj = 150 °C 0.048 0.007 mA 100 nA µs 1.00 2021-04-22 FS3L100R07W3S5_B11 EasyPACK™ module 4 Diode, 3-Level Table 6 Characteristic values (continued) Parameter Symbol Note or test condition Values Min. Rise time (inductive load) Turn-off delay time (inductive load) tr tdoff Fall time (inductive load) Turn-on energy loss per pulse Turn-off energy loss per pulse SC data tf Eon Eoff ISC Thermal resistance, junction to heatsink RthJH Temperature under switching conditions Tvj op 4 Table 7 IC = 50 A, VCE = 300 V, VGE = ±15 V, RGon = 8.2 Ω Typ. Unit Max. Tvj = 25 °C 0.017 Tvj = 125 °C 0.018 Tvj = 150 °C 0.019 Tvj = 25 °C 0.330 Tvj = 125 °C 0.370 Tvj = 150 °C 0.380 Tvj = 25 °C 0.130 Tvj = 125 °C 0.210 Tvj = 150 °C 0.240 IC = 50 A, VCE = 300 V, Lσ = 35 nH, VGE = ±15 V, RGon = 8.2 Ω, di/dt = 2400 A/µs (Tvj = 150 °C) Tvj = 25 °C 0.29 Tvj = 125 °C 0.34 Tvj = 150 °C 0.36 IC = 50 A, VCE = 300 V, Lσ = 35 nH, VGE = ±15 V, RGoff = 8.2 Ω, dv/dt = 1600 V/µs (Tvj = 150 °C) Tvj = 25 °C 2.48 Tvj = 125 °C 3.45 Tvj = 150 °C 3.69 VGE ≤ 15 V, VCC = 360 V, VCEmax=VCES-LsCE*di/dt tP ≤ 0 µs, Tvj ≤ 150 °C 900 A 0.902 K/W IC = 50 A, VCE = 300 V, VGE = ±15 V, RGoff = 8.2 Ω IC = 50 A, VCE = 300 V, VGE = ±15 V, RGoff = 8.2 Ω per IGBT -40 µs µs µs mJ mJ 150 °C Diode, 3-Level Maximum rated values Parameter Symbol Note or test condition Unit 650 V Repetitive peak reverse voltage VRRM Implemented forward current IFN 75 A Continous DC forward current IF 40 A 150 A Repetitive peak forward current Datasheet IFRM Tvj = 25 °C Values tP = 1 ms 6 1.00 2021-04-22 FS3L100R07W3S5_B11 EasyPACK™ module 5 Diode, Inverter Table 7 Maximum rated values (continued) Parameter Symbol Note or test condition I2t - value I2t Table 8 VR = 0 V, tP = 10 ms Values Unit Tvj = 125 °C 370 A²s Tvj = 150 °C 360 Characteristic values Parameter Symbol Note or test condition Values Min. Forward voltage VF Peak reverse recovery current Recovered charge IRM Qr Reverse recovery energy Erec Thermal resistance, junction to heatsink RthJH Temperature under switching conditions Tvj op 5 Table 9 Unit Typ. Max. Tvj = 25 °C 1.30 1.64 Tvj = 125 °C 1.20 Tvj = 150 °C 1.15 IF = 40 A, VR = 300 V, VGE = -15 V, -diF/dt = 2900 A/µs (Tvj = 150 °C) Tvj = 25 °C 47 Tvj = 125 °C 60 Tvj = 150 °C 66 IF = 40 A, VR = 300 V, VGE = -15 V, -diF/dt = 2900 A/µs (Tvj = 150 °C) Tvj = 25 °C 2.13 Tvj = 125 °C 4.18 Tvj = 150 °C 4.9 IF = 40 A, VR = 300 V, VGE = -15 V, -diF/dt = 2900 A/µs (Tvj = 150 °C) Tvj = 25 °C 0.55 Tvj = 125 °C 1.04 Tvj = 150 °C 1.23 IF = 40 A, VGE = 0 V per diode A µC mJ 1.21 -40 V K/W 150 °C Diode, Inverter Maximum rated values Parameter Symbol Note or test condition Unit 650 V Repetitive peak reverse voltage VRRM Implemented forward current IFN 75 A Continous DC forward current IF 40 A 150 A Repetitive peak forward current Datasheet IFRM Tvj = 25 °C Values tP = 1 ms 7 1.00 2021-04-22 FS3L100R07W3S5_B11 EasyPACK™ module 6 NTC-Thermistor Table 9 Maximum rated values (continued) Parameter Symbol Note or test condition I2t - value I2t Table 10 VR = 0 V, tP = 10 ms Values Unit Tvj = 125 °C 370 A²s Tvj = 150 °C 360 Characteristic values Parameter Symbol Note or test condition Values Min. Forward voltage VF Peak reverse recovery current Recovered charge IRM Qr Reverse recovery energy Erec Thermal resistance, junction to heatsink RthJH Temperature under switching conditions Tvj op 6 Unit Typ. Max. Tvj = 25 °C 1.30 1.64 Tvj = 125 °C 1.20 Tvj = 150 °C 1.15 IF = 40 A, VR = 300 V, VGE = -15 V, -diF/dt = 2400 A/µs (Tvj = 150 °C) Tvj = 25 °C 42 Tvj = 125 °C 55 Tvj = 150 °C 59 IF = 40 A, VR = 300 V, VGE = -15 V, -diF/dt = 2400 A/µs (Tvj = 150 °C) Tvj = 25 °C 1.73 Tvj = 125 °C 4.11 Tvj = 150 °C 4.47 IF = 40 A, VR = 300 V, VGE = -15 V, -diF/dt = 2400 A/µs (Tvj = 150 °C) Tvj = 25 °C 0.21 Tvj = 125 °C 1.03 Tvj = 150 °C 1.18 IF = 40 A, VGE = 0 V per diode A µC mJ 1.04 -40 V K/W 150 °C NTC-Thermistor Table 11 Characteristic values Parameter Symbol Note or test condition Values Min. Rated resistance R25 TNTC = 25 °C Typ. Unit Max. 5 kΩ TNTC = 100 °C, R100 = 493 Ω Power dissipation ΔR/R B-value B25/50 R2 = R25 exp[B25/50(1/T2-1/(298,15 K))] 3375 K B-value B25/80 R2 = R25 exp[B25/80(1/T2-1/(298,15 K))] 3411 K B-value B25/100 R2 = R25 exp[B25/100(1/T2-1/(298,15 K))] 3433 K Deviation of R100 Note: Datasheet P25 -5 TNTC = 25 °C 5 % 20 mW Specification according to the valid application note. 8 1.00 2021-04-22 FS3L100R07W3S5_B11 EasyPACK™ module 7 Characteristics diagrams 7 Characteristics diagrams output characteristic (typical), IGBT,3-Level IC = f(VCE) VGE = 15 V output characteristic (typical), IGBT,3-Level IC = f(VCE) Tvj = 150 °C 100 100 90 90 80 80 70 70 60 60 50 50 40 40 30 30 20 20 10 10 0 0 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 0.0 transfer characteristic (typical), IGBT,3-Level IC = f(VGE) VCE = 20 V 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 switching losses (typical), IGBT,3-Level E = f(IC) RGoff = 8.2 Ω, RGon = 8.2 Ω, VCE = 300 V, VGE = ± 15 V 100 2.0 90 1.8 80 1.6 70 1.4 60 1.2 50 1.0 40 0.8 30 0.6 20 0.4 10 0.2 0 0.0 4.0 Datasheet 0.2 4.5 5.0 5.5 6.0 6.5 0 9 10 20 30 40 50 60 70 80 90 100 1.00 2021-04-22 FS3L100R07W3S5_B11 EasyPACK™ module 7 Characteristics diagrams switching losses (typical), IGBT,3-Level E = f(RG) IC = 50 A, VCE = 300 V, VGE = ± 15 V switching times (typical), IGBT,3-Level t = f(IC) RGoff = 8.2 Ω, RGon = 8.2 Ω, VCE = 300 V, VGE = ± 15 V, Tvj = 150 °C 10 2.8 2.6 2.4 2.2 1 2.0 1.8 1.6 1.4 0.1 1.2 1.0 0.8 0.01 0.6 0.4 0.2 0.0 0.001 0 10 20 30 40 50 60 70 80 90 0 switching times (typical), IGBT,3-Level t = f(RG) IC = 50 A, VCE = 300 V, VGE = ± 15 V, Tvj = 150 °C 10 20 30 40 50 60 70 80 90 100 transient thermal impedance , IGBT,3-Level Zth = f(t) 10 10 1 1 0.1 0.1 0.01 0.001 0 Datasheet 10 20 30 40 50 60 70 80 0.01 0.001 90 10 0.01 0.1 1 10 1.00 2021-04-22 FS3L100R07W3S5_B11 EasyPACK™ module 7 Characteristics diagrams reverse bias safe operating area (RBSOA), IGBT,3-Level capacity characteristic (typical), IGBT,3-Level IC = f(VCE) C = f(VCE) RGoff = 8.2 Ω, VGE = ±15 V, Tvj = 150 °C f = 100 kHz, VGE = 0 V, Tvj = 25 °C 100000 250 225 200 10000 175 150 125 1000 100 75 100 50 25 0 10 0 100 200 300 400 500 600 700 0 gate charge characteristic (typical), IGBT,3-Level VGE = f(QG) IC = 50 A, Tvj = 25 °C 10 20 30 40 50 60 70 80 90 100 output characteristic (typical), IGBT, Inverter IC = f(VCE) VGE = 15 V 15 100 90 10 80 70 5 60 0 50 40 -5 30 20 -10 10 -15 0.00 Datasheet 0 0.10 0.20 0.30 0.40 0.50 0.0 11 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.00 2021-04-22 FS3L100R07W3S5_B11 EasyPACK™ module 7 Characteristics diagrams output characteristic (typical), IGBT, Inverter IC = f(VCE) Tvj = 150 °C transfer characteristic (typical), IGBT, Inverter IC = f(VGE) VCE = 20 V 100 100 90 90 80 80 70 70 60 60 50 50 40 40 30 30 20 20 10 10 0 0 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 4.0 switching losses (typical), IGBT, Inverter E = f(IC) RGoff = 8.2 Ω, RGon = 8.2 Ω, VCE = 300 V, VGE = ± 15 V 5.0 5.5 6.0 6.5 7.0 7.5 8.0 80 90 switching losses (typical), IGBT, Inverter E = f(RG) IC = 50 A, VCE = 300 V, VGE = ± 15 V 6.0 6.0 5.5 5.5 5.0 5.0 4.5 4.5 4.0 4.0 3.5 3.5 3.0 3.0 2.5 2.5 2.0 2.0 1.5 1.5 1.0 1.0 0.5 0.5 0.0 0.0 0 Datasheet 4.5 10 20 30 40 50 60 70 80 90 100 0 12 10 20 30 40 50 60 70 1.00 2021-04-22 FS3L100R07W3S5_B11 EasyPACK™ module 7 Characteristics diagrams switching times (typical), IGBT, Inverter t = f(IC) RGoff = 8.2 Ω, RGon = 8.2 Ω, VCE = 300 V, VGE = ± 15 V, Tvj = 150 °C switching times (typical), IGBT, Inverter t = f(RG) IC = 50 A, VCE = 300 V, VGE = ± 15 V, Tvj = 150 °C 100 10 10 1 1 0.1 0.1 0.01 0.01 0.001 0.001 0 10 20 30 40 50 60 70 80 90 100 0 transient thermal impedance , IGBT, Inverter Zth = f(t) 10 20 30 40 50 60 70 80 90 reverse bias safe operating area (RBSOA), IGBT, Inverter IC = f(VCE) RGoff = 8.2 Ω, VGE = ±15 V, Tvj = 150 °C 10 200 175 150 1 125 100 75 0.1 50 25 0.01 0.001 Datasheet 0 0.01 0.1 1 0 10 13 100 200 300 400 500 600 700 1.00 2021-04-22 FS3L100R07W3S5_B11 EasyPACK™ module 7 Characteristics diagrams capacity characteristic (typical), IGBT, Inverter C = f(VCE) f = 100 kHz, VGE = 0 V, Tvj = 25 °C gate charge characteristic (typical), IGBT, Inverter VGE = f(QG) IC = 50 A, Tvj = 25 °C 100000 15 10 10000 5 1000 0 -5 100 -10 -15 10 0 10 20 30 40 50 60 70 80 90 100 0.0 forward characteristic of (typical), Diode, 3-Level IF = f(VF) 0.2 0.4 0.6 0.8 1.0 switching losses (typical), Diode, 3-Level Erec = f(IF) RGon = 8.2 Ω, VCE = 300 V 80 2.0 1.8 70 1.6 60 1.4 50 1.2 40 1.0 0.8 30 0.6 20 0.4 10 0.2 0 0.0 0.0 Datasheet 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 0 14 10 20 30 40 50 60 70 80 1.00 2021-04-22 FS3L100R07W3S5_B11 EasyPACK™ module 7 Characteristics diagrams switching losses (typical), Diode, 3-Level Erec = f(RG) VCE = 300 V, IF = 40 A transient thermal impedance , Diode, 3-Level Zth = f(t) 10 2.0 1.8 1.6 1.4 1 1.2 1.0 0.8 0.1 0.6 0.4 0.2 0.0 0 10 20 30 40 50 60 70 80 0.01 0.01 90 forward characteristic of (typical), Diode, Inverter IF = f(VF) 0.1 1 10 switching losses (typical), Diode, Inverter Erec = f(IF) RGon = 8.2 Ω, VCE = 300 V 80 2.0 1.8 70 1.6 60 1.4 50 1.2 40 1.0 0.8 30 0.6 20 0.4 10 0.2 0 0.0 0.0 Datasheet 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 0 15 10 20 30 40 50 60 70 80 1.00 2021-04-22 FS3L100R07W3S5_B11 EasyPACK™ module 7 Characteristics diagrams switching losses (typical), Diode, Inverter Erec = f(RG) VCE = 300 V, IF = 40 A transient thermal impedance , Diode, Inverter Zth = f(t) 10 2.0 1.8 1.6 1.4 1 1.2 1.0 0.8 0.1 0.6 0.4 0.2 0.0 0 10 20 30 40 50 60 70 80 0.01 0.001 90 0.01 0.1 1 10 temperature characteristic (typical), NTC-Thermistor R = f(TNTC) 100000 10000 1000 100 0 Datasheet 25 50 75 100 125 150 16 1.00 2021-04-22 FS3L100R07W3S5_B11 EasyPACK™ module 8 Circuit diagram 8 Circuit diagram J Figure 2 Package outlines ( 4,2) B dimensioned for EJOT Delta PT WN5451 25 choose length according to pcb thickness 4x 0,25 A B C P3 26 0,25 A B C 17,6 20,8 24 2x 14 26 G12 G23 E23 G33 E33 E31 E13 G21 E11 G11 E21 G31 G34 E34 G24 DC3N DC23+ G14 DC2N1 DC2N2 E24 DC12- E14 DC1N DC1+ ,4) ( 3 44,4 47,4 49,7 0 E12 E22 G13 DC3- 49,7 47,4 44,4 P1 E32 T2 11,2 8 4,8 1,6 0 1,6 4,8 8 0 P2 G22 G32 T1 24 20,8 17,6 5,4 0,1 2x 14 62 0,45 pcb hole pattern 3,5 4x ( 2,3) Dome 4x 2x 12 according to screw head washer 9 (12) 26,48 29,68 32,88 36,08 0 4,08 7,28 10,48 13,68 16,88 20,08 - Details about hole specification for contacts refer to AN2009-01 chapter 2 (16,4) 12,2 0,1 A 4,08 36,08 32,88 C 26,48 23,28 20,08 16,88 13,68 10,48 109,9 0,45 - Diameters of drill 1,15mm - Copper thickness in hole 25~50um recommended design hight Figure 3 Datasheet 17 1.00 2021-04-22 FS3L100R07W3S5_B11 EasyPACK™ module 10 Module label code 10 Module label code Module label code Code format Data Matrix Barcode Code128 Encoding ASCII text Code Set A Symbol size 16x16 23 digits Standard IEC24720 and IEC16022 IEC8859-1 Code content Content Module serial number Module material number Production order number Date code (production year) Date code (production week) Digit 1–5 6 - 11 12 - 19 20 – 21 22 – 23 Example 71549 142846 55054991 15 30 Example 71549142846550549911530 71549142846550549911530 Figure 4 2 Datasheet 18 1.00 2021-04-22 FS3L100R07W3S5_B11 EasyPACK™ module Revision history Revision history Document revision Date of release V1.0 2020-04-03 1.00 2021-04-22 Datasheet Description of changes Final 19 1.00 2021-04-22 Trademarks All referenced product or service names and trademarks are the property of their respective owners. Edition 2021-04-22 Published by Infineon Technologies AG 81726 Munich, Germany © 2021 Infineon Technologies AG All Rights Reserved. Do you have a question about any aspect of this document? Email: erratum@infineon.com Document reference IFX- IMPORTANT NOTICE The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics (“Beschaffenheitsgarantie”). With respect to any examples, hints or any typical values stated herein and/or any information regarding the application of the product, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation warranties of non-infringement of intellectual property rights of any third party. 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