IAUC120N04S6N010ATMA1

IAUC120N04S6N010 OptiMOS™- 6 Power-Transistor Product Summary VDS 40 V RDS(on),max 1.0 mW ID 120 A Features • OptiMOS™ - power MOSFET for automotive applications PG-TDSON-8 • N-channel - Enhancement mode - Normal Level • AEC Q101 qualified • MSL1 up to 260°C peak reflow 1 • 175°C operating temperature 1 • Green Product (RoHS compliant) • 100% Avalanche tested Type Package Marking IAUC120N04S6N010 PG-TDSON-8 6N04N010 Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Symbol Continuous drain current1) ID Conditions Value T C=25°C, V GS=10V 120 T C=25°C, V GS=10V2,3) 150 T C=100°C, V GS=10V2) 120 Unit A Pulsed drain current2) I D,pulse T C=25 °C 480 Avalanche energy, single pulse2) E AS I D=60A, R G,min=25W 400 mJ Avalanche current, single pulse I AS R G,min=25W 60 A Gate source voltage V GS - ±20 V Power dissipation P tot T C=25°C 150 W Operating and storage temperature T j, T stg - -55 ... +175 °C Rev. 1.0 page 1 2019-04-01 IAUC120N04S6N010 Parameter Symbol Values Conditions Unit min. typ. max. Thermal characteristics2) Thermal resistance, junction - case R thJC - - - 1.0 Thermal resistance, junction ambient R thJA 6 cm2 cooling area4) - - 50 K/W Electrical characteristics, at T j=25 °C, unless otherwise specified Static characteristics Drain-source breakdown voltage V (BR)DSS V GS=0V, I D= 1mA 40 - - Gate threshold voltage V GS(th) V DS=V GS, I D=90µA 2.2 2.6 3.0 Zero gate voltage drain current I DSS V DS=40V, V GS=0V, T j=25°C - - 1 T j=125°C2) - - 25 V DS=40V, V GS=0V, V µA Gate-source leakage current I GSS V GS=20V, V DS=0V - - 100 nA Drain-source on-state resistance R DS(on) V GS=7V, I D=60A - 0.93 1.3 mW V GS=10V, I D=60A - 0.81 1.03 Rev. 1.0 page 2 2019-04-01 IAUC120N04S6N010 Parameter Symbol Values Conditions Unit min. typ. max. - 5291 6878 - 1602 2082 Dynamic characteristics2) Input capacitance C iss Output capacitance C oss Reverse transfer capacitance Crss - 65 97 Turn-on delay time t d(on) - 9 - Rise time tr - 5 - Turn-off delay time t d(off) - 22 - Fall time tf - 11 - Gate to source charge Q gs - 22 29 Gate to drain charge Q gd - 16 24 Gate charge total Qg - 81 108 Gate plateau voltage V plateau - 4.2 - V - - 120 A - - 480 V GS=0V, V DS=25V, f =1MHz V DD=20V, V GS=10V, I D=120A, R G=3.5W pF ns Gate Charge Characteristics2) V DD=32V, I D=120A, V GS=0 to 10V nC Reverse Diode Diode continous forward current2) IS Diode pulse current2) I S,pulse Diode forward voltage V SD V GS=0V, I F=60A, T j=25°C - 0.8 1.1 V Reverse recovery time2) t rr V R=20V, I F=50A, di F/dt =100A/µs - 57 - ns Reverse recovery charge2) Q rr - 64 - nC T C=25°C 1) Current is limited by package; with an R thJC = 1K/W the chip is able to carry 284 A at 25°C. 2) The parameter is not subject to production test- verified by design/characterization. 3) The product can operate at a current of I D=150A for a limited period of time up to t=100h at Tc=25 °C 4) Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm 2 (one layer, 70 µm thick) copper area for drain connection. PCB is vertical in still air. Rev. 1.0 page 3 2019-04-01 IAUC120N04S6N010 1 Power dissipation 2 Drain current P tot = f(T C); V GS = 10 V I D = f(T C); V GS = 10 V 140 150 120 100 ID [A] Ptot [W] 100 80 60 50 40 20 0 0 0 50 100 150 200 0 50 100 TC [°C] 150 200 TC [°C] 3 Safe operating area 4 Max. transient thermal impedance I D = f(V DS); T C = 25 °C; D = 0 Z thJC = f(t p) parameter: t p parameter: D =t p/T 1000 101 1 µs 10 µs 100 0.5 100 ZthJC [K/W] ID [A] 100 µs 150 µs 10-1 0.1 0.05 10 0.01 single pulse 10-2 1 10-3 0.1 1 10 100 VDS [V] Rev. 1.0 10-6 10-5 10-4 10-3 10-2 10-1 100 tp [s] page 4 2019-04-01 IAUC120N04S6N010 5 Typ. output characteristics 6 Typ. drain-source on-state resistance I D = f(V DS); T j = 25 °C R DS(on) = f(I D); T j = 25 °C parameter: V GS parameter: V GS 1000 10 V 900 5.5 V 7V 800 4 4.5 V 700 RDS(on) [mW] ID [A] 600 5V 500 400 2 5V 300 5.5 V 4.5 V 200 7V 10 V 100 0 0 1 2 3 4 5 6 0 7 0 50 100 150 VDS [V] 200 250 300 350 400 ID [A] 7 Typ. transfer characteristics 8 Typ. drain-source on-state resistance I D = f(V GS); V DS = 6V R DS(on) = f(T j); I D = 50 A; V GS = 10 V parameter: T j 1000 1.7 900 1.5 800 700 1.3 RDS(on) [mW] ID [A] 600 500 400 1.1 0.9 300 200 175°C 0.7 25°C 100 -55°C 0 2.5 3 3.5 4 4.5 5 5.5 VGS [V] Rev. 1.0 0.5 -60 -20 20 60 100 140 180 Tj [°C] page 5 2019-04-01 IAUC120N04S6N010 9 Typ. gate threshold voltage 10 Typ. capacitances V GS(th) = f(T j); V GS = V DS C = f(V DS); V GS = 0 V; f = 1 MHz parameter: I D 104 4 Ciss 3.5 Coss C [pF] 3 VGS(th) [V] 900 µA 2.5 103 90 µA 2 Crss 102 1.5 1 101 0.5 -60 -20 20 60 100 140 0 180 10 20 30 VDS [V] Tj [°C] 11 Typical forward diode characteristicis 12 Avalanche characteristics IF = f(VSD) I A S= f(t AV) parameter: T j parameter: Tj(start) 100 103 25 °C 100 °C 150 °C IF [A] IAV [A] 102 175 °C 25 °C 10 101 100 0 0.2 0.4 0.6 0.8 1 1.2 1.4 VSD [V] Rev. 1.0 1 1 10 100 1000 tAV [µs] page 6 2019-04-01 IAUC120N04S6N010 13 Avalanche energy 14 Drain-source breakdown voltage E AS = f(T j) V BR(DSS) = f(T j); I D = 1 mA 44 2000 1800 1600 1400 15 A 42 VBR(DSS) [V] EAS [mJ] 1200 1000 800 30 A 40 600 400 60 A 200 38 0 25 75 125 -60 175 -20 Tj [°C] 20 60 100 140 180 Tj [°C] 15 Typ. gate charge 16 Gate charge waveforms V GS = f(Q gate); I D = 40 A pulsed parameter: V DD 10 V GS 9 Qg 8V 8 32 V 7 VGS [V] 6 5 V gs(th) 4 3 2 Q g(th) Q sw Q gate 1 Q gs 0 0 20 40 60 Q gd 80 Qgate [nC] Rev. 1.0 page 7 2019-04-01 IAUC120N04S6N010 Published by Infineon Technologies AG 81726 Munich, Germany © Infineon Technologies AG 2019 All Rights Reserved. Legal Disclaimer The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics. With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation, warranties of non-infringement of intellectual property rights of any third party. Information For further information on technology, delivery terms and conditions and prices, please contact the nearest Infineon Technologies Office (www.infineon.com). Warnings Due to technical requirements, components may contain dangerous substances. For information on the types in question, please contact the nearest Infineon Technologies Office. Infineon Technologies components may be used in life-support devices or systems only with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. Rev. 1.0 page 8 2019-04-01 IAUC120N04S6N010 Revision History Version Rev. 1.0 Date Changes page 9 2019-04-01