IAUC60N04S6N050HATMA1

IAUC60N04S6N050H OptiMOS™- 6 Power-Transistor Product Summary VDS 40 V RDS(on),max 5.0 mW ID 60 A Features • OptiMOS™ - power MOSFET for automotive applications PG-TDSON-8-57 • Half-Bridge - N-channel - Enhancement mode - Normal Level • AEC Q101 qualified • MSL1 up to 260°C peak reflow • 175°C operating temperature • Green Product (RoHS compliant) • 100% Avalanche tested Type Package Marking IAUC60N04S6N050H PG-TDSON-8-57 6N04N050 Maximum ratings per channel, at T j=25 °C, unless otherwise specified Parameter Symbol Drain current ID Conditions V GS=10V, Chip Limitation1,2) V GS=10V, DC current3) Ta=85°C, VGS=10V, Value 74 Unit A 60 RthJA on 2s2p2,4) 16 Pulsed drain current2) I D,pulse T C=25°C, t p =100µs 171 Avalanche energy, single pulse2) E AS I D=12A, R g,min=25Ω 53 mJ Avalanche current, single pulse I AS R g,min=25Ω 12 A Gate source voltage V GS - ±20 V Power dissipation P tot T C=25°C 52 W Operating and storage temperature T j, T stg - -55 ... +175 °C Rev. 1.0 page 1 2020-09-22 IAUC60N04S6N050H Parameter Symbol Values Conditions Unit min. typ. max. Thermal characteristics2) Thermal resistance, junction - case R thJC - - - 2.9 Thermal resistance, junction - ambient4) R thJA - - 35 - K/W Electrical characteristics, at T j=25 °C, unless otherwise specified Static characteristics Drain-source breakdown voltage V (BR)DSS V GS=0V, I D= 1mA 40 - - Gate threshold voltage V GS(th) V DS=V GS, I D=13µA 2.2 2.6 3.0 Zero gate voltage drain current I DSS V DS=40V, V GS=0V, T j=25°C - - 1 T j=125°C2) - - 10 V DS=40V, V GS=0V, V µA Gate-source leakage current I GSS V GS=20V, V DS=0V - - 100 nA Drain-source on-state resistance R DS(on) V GS=7V, I D=30A - 4.9 6.5 mW V GS=10V, I D=30A - 4.0 5.0 Rev. 1.0 page 2 2020-09-22 IAUC60N04S6N050H Parameter Symbol Values Conditions Unit min. typ. max. - 790 1027 - 248 322 Dynamic characteristics2) Input capacitance C iss Output capacitance C oss Reverse transfer capacitance Crss - 17 26 Turn-on delay time t d(on) - 3 - Rise time tr - 1 - Turn-off delay time t d(off) - 6 - Fall time tf - 3 - Gate to source charge Q gs - 3.7 4.9 Gate to drain charge Q gd - 2.8 4.2 Gate charge total Qg - 13 17 Gate plateau voltage V plateau - 4.7 - V A V GS=0V, V DS=25V, f =1MHz V DD=20V, V GS=10V, I D=60A, R G=3.5W pF ns Gate Charge Characteristics2) V DD=32V, I D=60A, V GS=0 to 10V nC Reverse Diode Diode continous forward current2) IS T C=25°C - - 50 Diode pulse current2) I S,pulse T C=25°C, t p =100µs - - 210 Diode forward voltage V SD V GS=0V, I F=30A, T j=25°C - 0.8 1.1 V Reverse recovery time2) t rr V R=20V, I F=50A, di F/dt =100A/µs - 20 - ns Reverse recovery charge2) Q rr - 8 - nC 1) Practically the current is limited by overall system design including customer specific PCB. The parameter is not subject to production test - specified by design. 3) The product can operate at specified current based on best practice to minimize electromigration at the solder joint. For rare events and inrush currents the value may be exceeded. 2) 4) Device on 2s2p FR4 PCB defined in accordance with JEDEC standards (JESD51-5, -7). PCB is vertical in still air. Rev. 1.0 page 3 2020-09-22 IAUC60N04S6N050H 1 Power dissipation 2 Drain current P tot = f(T C); V GS = 10 V I D = f(T C); V GS = 10 V 60 100 50 80 Chip limit 40 ID [A] Ptot [W] 60 30 DC current 40 20 20 10 0 0 0 50 100 150 200 0 50 100 TC [°C] 150 200 TC [°C] 3 Safe operating area 4 Max. transient thermal impedance I D = f(V DS); T C = 25 °C; D = 0 Z thJC = f(t p) parameter: t p parameter: D =t p/T 1000 101 0.5 100 1 µs 100 0.1 ZthJC [K/W] ID [A] 10 µs 100 µs 0.05 0.01 10-1 single pulse 150 µs 10 10-2 1 10-3 0.1 1 10 100 VDS [V] Rev. 1.0 10-6 10-5 10-4 10-3 10-2 10-1 100 tp [s] page 4 2020-09-22 IAUC60N04S6N050H 5 Typ. output characteristics 6 Typ. drain-source on-state resistance I D = f(V DS); T j = 25 °C R DS(on) = f(I D); T j = 25 °C parameter: V GS parameter: V GS 200 20 10 V 180 18 4.5 V 5.5 V 16 7V 140 14 120 12 RDS(on) [mW] ID [A] 160 100 5.0 V 80 60 5V 5.5 V 10 8 7V 6 40 4 4.5 V 10 V 20 2 0 0 1 2 0 3 0 20 40 60 VDS [V] 80 100 120 140 160 180 200 ID [A] 7 Typ. transfer characteristics 8 Typ. drain-source on-state resistance I D = f(V GS); V DS = 6V R DS(on) = f(T j); I D = 30 A; V GS = 10 V parameter: T j 200 9 180 8 160 7 140 RDS(on) [mW] ID [A] 120 100 80 60 6 5 4 175 °C 40 25 °C 3 20 -55 °C 0 2.5 3 3.5 4 4.5 5 5.5 6 VGS [V] Rev. 1.0 2 -60 -20 20 60 100 140 180 Tj [°C] page 5 2020-09-22 IAUC60N04S6N050H 9 Typ. gate threshold voltage 10 Typ. capacitances V GS(th) = f(T j); V GS = V DS C = f(V DS); V GS = 0 V; f = 1 MHz parameter: I D 104 4 3.5 C [pF] 3 130 µA VGS(th) [V] 2.5 103 Ciss Coss 13 µA 2 1.5 102 1 Crss 0.5 101 0 -60 -20 20 60 100 140 0 180 10 20 30 VDS [V] Tj [°C] 11 Typical forward diode characteristicis 12 Avalanche characteristics IF = f(VSD) I A S= f(t AV) parameter: T j parameter: Tj(start) 100 103 IF [A] IAV [A] 102 10 25 °C 175 °C 25 °C 100 °C 101 150 °C 100 0 0.2 0.4 0.6 0.8 1 1.2 1.4 VSD [V] Rev. 1.0 1 1 10 100 1000 tAV [µs] page 6 2020-09-22 IAUC60N04S6N050H 13 Avalanche energy 14 Drain-source breakdown voltage E AS = f(T j) V BR(DSS) = f(T j); I D = 1 mA 44 200 180 160 140 42 VBR(DSS) [V] EAS [mJ] 120 100 80 6A 40 60 12 A 40 20 38 0 25 75 125 -60 175 -20 Tj [°C] 20 60 100 140 180 Tj [°C] 15 Typ. gate charge 16 Gate charge waveforms V GS = f(Q gate); I D = 30 A pulsed parameter: V DD 10 V GS 8V 9 Qg 32 V 8 7 VGS [V] 6 5 V gs(th) 4 3 2 Q g(th) Q sw Q gate 1 Q gs 0 0 5 10 Q gd 15 Qgate [nC] Rev. 1.0 page 7 2020-09-22 IAUC60N04S6N050H PG-TDSON-8: Outline Footprint Dimensions in mm Packaging Rev. 1.0 page 8 2020-09-22 IAUC60N04S6N050H Published by Infineon Technologies AG 81726 Munich, Germany © Infineon Technologies AG 2020 All Rights Reserved. Legal Disclaimer The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics. With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation, warranties of non-infringement of intellectual property rights of any third party. Information For further information on technology, delivery terms and conditions and prices, please contact the nearest Infineon Technologies Office (www.infineon.com). Warnings Due to technical requirements, components may contain dangerous substances. For information on the types in question, please contact the nearest Infineon Technologies Office. Infineon Technologies components may be used in life-support devices or systems only with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. Rev. 1.0 page 9 2020-09-22 IAUC60N04S6N050H Revision History Version Revision 1.0 Rev. 1.0 Date Changes 22.09.2020 Final Datasheet page 10 2020-09-22