IAUC70N08S5N074ATMA1

IAUC70N08S5N074 OptiMOS™-5 Power-Transistor Product Summary VDS 80 V RDS(on) 7.4 mW ID 70 A Features • N-channel - Enhancement mode PG-TDSON-8 • AEC Q101 qualified • MSL1 up to 260°C peak reflow • 175°C operating temperature • Green product (RoHS compliant) 1 • 100% Avalanche tested 1 Type Package Marking IAUC70N08S5N074 PG-TDSON-8 5N08074 Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Symbol Continuous drain current ID Conditions T C=25°C, V GS=10V T C=100 °C, Value 70 V GS=10 V1) 47 Unit A Pulsed drain current1) I D,pulse T C=25 °C 280 Avalanche energy, single pulse1) E AS I D=35 A 57 mJ Avalanche current, single pulse I AS - 70 A Gate source voltage V GS - ±20 V Power dissipation P tot T C=25 °C 83 W Operating and storage temperature T j, T stg - -55 ... +175 °C IEC climatic category; DIN IEC 68-1 - - 55/175/56 Rev. 1.0 page 1 2018-07-24 IAUC70N08S5N074 Parameter Symbol Values Conditions Unit min. typ. max. - - 1.8 Thermal characteristics1) Thermal resistance, junction - case R thJC - K/W Electrical characteristics, at T j=25 °C, unless otherwise specified Static characteristics Drain-source breakdown voltage V (BR)DSS V GS=0 V, I D=1 mA 80 - - Gate threshold voltage V GS(th) V DS=V GS, I D=36 µA 2.2 3 3.8 Zero gate voltage drain current I DSS V DS=80 V, V GS=0 V, T j=25 °C - 0.1 1 T j=85 °C1) - 1 20 V DS=80 V, V GS=0 V, V µA Gate-source leakage current I GSS V GS=20 V, V DS=0 V - - 100 nA Drain-source on-state resistance R DS(on) V GS=6 V, I D=18 A - 9.1 10.6 mΩ V GS=10 V, I D=35 A - 6.6 7.4 - 1.2 - Gate resistance1) RG W IAUC70N08S5N074 Parameter Symbol Values Conditions Unit min. typ. max. - 1600 2080 - 274 356 Dynamic characteristics1) Input capacitance C iss Output capacitance C oss Reverse transfer capacitance Crss - 14 22 Turn-on delay time t d(on) - 4.7 - Rise time tr - 1.2 - Turn-off delay time t d(off) - 7 - Fall time tf - 5.8 - Gate to source charge Q gs - 8.0 10.0 Gate to drain charge Q gd - 5.2 8.0 Gate charge total Qg - 23.0 30.0 Gate plateau voltage V plateau - 4.9 - V - - 70 A - - 280 - 0.9 1.2 V - 40 - ns - 60 - nC V GS=0 V, V DS=40 V, f =1 MHz V DD=40 V, V GS=10 V, I D=70 A, R G=3.5 W pF ns Gate Charge Characteristics1) V DD=40 V, I D=35 A, V GS=0 to 10 V nC Reverse Diode Diode continous forward current1) IS Diode pulse current1) I S,pulse Diode forward voltage V SD Reverse recovery time1) t rr Reverse recovery charge1) Q rr 1) T C=25 °C V GS=0 V, I F=35 A, T j=25 °C V R=40 V, I F=50 A, di F/dt =100 A/µs Defined by design. Not subject to production test. Rev. 1.0 page 3 2018-07-24 IAUC70N08S5N074 1 Power dissipation 2 Drain current P tot = f(T C); V GS ≥ 6 V I D = f(T C); V GS ≥ 6 V 100 80 80 60 ID [A] Ptot [W] 60 40 40 20 20 0 0 0 50 100 150 200 0 50 TC [°C] 100 TC [°C] 3 Safe operating area 4 Max. transient thermal impedance I D = f(V DS); T C = 25 °C; D = 0 Z thJC = f(t p) parameter: t p parameter: D =t p/T 1000 101 1 µs 10 µs 100 100 0.5 ZthJC [K/W] 100 µs ID [A] 150 µs 0.1 0.05 10 10-1 0.01 single pulse 1 10-2 0.1 1 10 VDS [V] 100 tp [s] 150 200 IAUC70N08S5N074 5 Typ. output characteristics 6 Typ. drain-source on-state resistance I D = f(V DS); T j = 25 °C R DS(on) = (I D); T j = 25 °C parameter: V GS parameter: V GS 24 280 4.5 V 5V 5.5 V 22 245 20 210 18 10 V RDS(on) [mW] 175 ID [A] 6.5 V 140 16 14 6V 105 12 70 5.5 V 35 5V 6V 10 6.5 V 8 4.5 V 10 V 6 0 0 1 2 3 4 5 6 0 7 20 40 60 ID [A] VDS [V] 7 Typ. transfer characteristics 8 Typ. drain-source on-state resistance I D = f(V GS); V DS = 6V R DS(on) = f(T j) parameter: T j parameter: V GS; I D 280 18 25 °C 16 -55 °C 210 14 RDS(on) [mW] ID [A] 175 °C 140 12 VGS=6 V, ID=18 A 10 VGS=10 V, ID=35 A 8 70 6 4 0 2 4 6 8 -20 20 60 100 140 180 Tj [°C] VGS [V] Rev. 1.0 -60 page 5 2018-07-24 IAUC70N08S5N074 9 Typ. gate threshold voltage 10 Typ. capacitances V GS(th) = f(T j); V GS = V DS C = f(V DS); V GS = 0 V; f = 1 MHz parameter: I D 104 4 3.5 Ciss 360 µA 103 C [pF] VGS(th) [V] 3 36 µA 2.5 Coss 102 2 1.5 Crss 101 1 -60 -20 20 60 100 140 0 180 20 40 60 80 VDS [V] Tj [°C] 11 Typical forward diode characteristicis 12 Typ. avalanche characteristics IF = f(VSD) I AS = f(t AV) parameter: T j parameter: Tj(start) 100 103 25 °C 102 IF [A] IAV [A] 100 °C 150 °C 10 175 °C 25 °C 101 1 100 0 0.2 0.4 0.6 0.8 VSD [V] 1 1.2 1.4 1 10 100 tAV [µs] 1000 IAUC70N08S5N074 13 Typical avalanche energy 14 Drain-source breakdown voltage E AS = f(T j) V BR(DSS) = f(T j); I D_typ = 1 mA parameter: I D 87 120 86 100 85 18 A 84 83 VBR(DSS) [V] EAS [mJ] 80 60 82 81 80 35 A 40 79 70 A 78 20 77 76 0 25 75 125 -60 175 -20 20 Tj [°C] 60 100 140 180 Tj [°C] 15 Typ. gate charge 16 Gate charge waveforms V GS = f(Q gate); I D = 35 A pulsed parameter: V DD 10 16 V 9 V GS 40 V 8 Qg 64 V 7 VGS [V] 6 5 4 3 2 Q gate 1 Q gs Q gd 0 0 5 10 15 20 25 Qgate [nC] Rev. 1.0 page 7 2018-07-24 IAUC70N08S5N074 Published by Infineon Technologies AG 81726 Munich, Germany © Infineon Technologies AG 2018 All Rights Reserved. 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Infineon Technologies components may be used in life-support devices or systems only with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. IAUC70N08S5N074 Revision History Version Date Changes Version 1.0 24.07.2018 Final Data Sheet Rev. 1.0 page 9 2018-07-24