IDH20G120C5XKSA1

Diod e Silicon Carbide Schottky Diode IDH20G120C5 5th Generation CoolSiC™ 1200 V SiC Schottky Diode ID H20 G 12 0C5 Rev. 2.2 2021-03-01 Indust rial Po wer C o ntrol IDH20G120C5 5th Generation CoolSiC™ 1200 V SiC Schottky Diode CoolSiCTM SiC Schottky Diode Features:           Revolutionary semiconductor material - Silicon Carbide No reverse recovery current / No forward recovery Temperature independent switching behavior Low forward voltage even at high operating temperature Tight forward voltage distribution Excellent thermal performance Extended surge current capability Specified dv/dt ruggedness Qualified according to JEDEC1) for target applications Pb-free lead plating; RoHS compliant Benefits         System efficiency improvement over Si diodes Enabling higher frequency / increased power density solutions System size / cost savings due to reduced heatsink requirements and smaller magnetics Reduced EMI Highest efficiency across the entire load range Robust diode operation during surge events High reliability RelatedLinks: www.infineon.com/sic Applications     Solar inverters Uninterruptable power supplies Motor drives Power Factor Correction Package pin definitions   Pin 1 and backside – cathode Pin 2 – anode Key Performance and Package Parameters Type IDH20G120C5 VDC IF QC Tj,max Marking Package 1200V 20A 82nC 175°C D2012C5 PG-TO220-2-1 1) J-STD20 and JESD22 Final Data Sheet 2 Rev. 2.2, 2021-03-01 IDH20G120C5 5th Generation CoolSiC™ 1200 V SiC Schottky Diode Table of Contents Description .................................................................................................................................................. 2 Table of Contents ........................................................................................................................................ 3 Maximum Ratings ....................................................................................................................................... 4 Thermal Resistances .................................................................................................................................. 4 Electrical Characteristics............................................................................................................................. 5 Electrical Characteristics Diagram .............................................................................................................. 6 Package Drawings ...................................................................................................................................... 9 Revision History ........................................................................................................................................ 10 Disclaimer ................................................................................................................................................. 11 Final Data Sheet 3 Rev. 2.2, 2021-03-01 IDH20G120C5 5th Generation CoolSiC™ 1200 V SiC Schottky Diode Maximum ratings Parameter Symbol Value Unit Repetitive peak reverse voltage VRRM 1200 V Continues forward current for Rth(j-c,max) TC = 150°C, D=1 TC = 135°C, D=1 TC = 25°C, D=1 Surge non-repetitive forward current, sine halfwave TC=25°C, tp=10ms TC=150°C, tp=10ms Non-repetitive peak forward current TC = 25°C, tp=10 µs i²t value TC = 25°C, tp=10 ms TC = 150°C, tp=10 ms Diode dv/dt ruggedness VR=0…960V Power dissipation TC = 25°C 20 27 56 IF IF,SM Soldering temperature, wavesoldering only allowed at leads, 1.6mm (0.063 in.) from case for 10 s Mounting torque M3 and M4 screws A 198 168 IF,max 1200 A ∫ i²dt 195 140 A²s dv/dt 150 V/ns Ptot 330 W -55…175 °C Tsold 260 °C M 0.7 Nm Tj;Tstg Operating and storage temperature A Thermal Resistances Parameter Value Symbol Conditions Unit min. typ. max. - 0.35 0.46 K/W - - 62 K/W Characteristic Diode thermal resistance, junction – case Thermal resistance, junction – ambient Final Data Sheet Rth(j-c) Rth(j-a) leaded 4 Rev. 2.2, 2021-03-01 IDH20G120C5 5th Generation CoolSiC™ 1200 V SiC Schottky Diode Electrical Characteristics Static Characteristics, at Tj=25°C, unless otherwise specified Parameter Value Symbol Conditions min. typ. max. 1200 - 1.5 2.0 8.5 44 1.8 2.6 123 630 Unit Static Characteristic DC blocking voltage VDC Diode forward voltage VF Reverse current IR Tj = 25°C IF= 20A, Tj=25°C IF= 20A, Tj=150°C VR=1200V, Tj=25°C VR=1200V, Tj=150°C V V µA Dynamic Characteristics, at Tj=25°C, unless otherwise specified Parameter Value Symbol Conditions Unit min. typ. max. - 82 - nC - 1050 74 59 - pF Dynamic Characteristics VR=800V, Tj=150°C Total capacitive charge QC VR QC   C (V )dV 0 Total Capacitance Final Data Sheet C VR=1 V, f=1 MHz VR=400 V, f=1 MHz VR=800 V, f=1 MHz 5 Rev. 2.2, 2021-03-01 IDH20G120C5 5th Generation CoolSiC™ 1200 V SiC Schottky Diode Electrical Characteristics Diagram Figure 1. Power dissipation as a function of case temperature, Ptot=f(TC, Rth(j-c),max) Figure 2. Diode forward current as function of temperature, Tj≤175°C, Rth(j-c),max, parameter D=duty cycle, Vth, Rdiff @ Tj=175°C Figure 3. Typical forward characteristics, IF=f(VF), tp= 10 µs, parameter: Tj Figure 4. Typical forward characteristics in surge current, IF=f(VF), tp= 10 µs, parameter: Tj Final Data Sheet 6 Rev. 2.2, 2021-03-01 IDH20G120C5 5th Generation CoolSiC™ 1200 V SiC Schottky Diode Figure 5. Typical capacitive charge as function of current slope1, QC=f(dIF/dt), Tj=150°C Figure 6. Typical reverse current as function of reverse voltage, IR=f(VR), parameter: Tj 1) Only capacitive charge, guaranteed by design. Figure 7. Max. transient thermal impedance, Zth,jc=f(tP), parameter: D=tP/T Final Data Sheet Figure 8. Typical capacitance as function of reverse voltage, C=f(VR); Tj=25°C; f=1 MHz 7 Rev. 2.2, 2021-03-01 IDH20G120C5 5th Generation CoolSiC™ 1200 V SiC Schottky Diode Figure 9. Typical capacitively stored energy as function of reverse voltage, VR EC   C (V )VdV 0 Final Data Sheet 8 Rev. 2.2, 2021-03-01 IDH20G120C5 5th Generation CoolSiC™ 1200 V SiC Schottky Diode Package Drawings Final Data Sheet 9 Rev. 2.2, 2021-03-01 IDH20G120C5 5th Generation CoolSiC™ 1200 V SiC Schottky Diode Revision History IIDH20G120C5 Revision: 2021-03-01, Rev. 2.2 Previous Revision: Revision Date Subjects (major changes since last version) 2.0 2015-09-03 Final data sheet 2.1 2017-07-21 Editorial Changes 2.2 2021-03-01 Increased dv/dt ruggedness Disclaimer We Listen to Your Comments Any information within this document that you feel is wrong, unclear or missing at all? Your feedback will help us to continuously improve the quality of this document. Please send your proposal (including a reference to this document) to: erratum@infineon.com Final Data Sheet 10 Rev. 2.2, 2021-03-01 IDH20G120C5 5th Generation CoolSiC™ 1200 V SiC Schottky Diode Published by Infineon Technologies AG 81726 München, Germany © Infineon Technologies AG 2021. All Rights Reserved. IMPORTANT NOTICE The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics (“Beschaffenheitsgarantie”). With respect to any examples, hints or any typical values stated herein and/or any information regarding the application of the product, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation warranties of non-infringement of intellectual property rights of any third party. In addition, any information given in this document is subject to customer’s compliance with its obligations stated in this document and any applicable legal requirements, norms and standards concerning customer’s products and any use of the product of Infineon Technologies in customer’s applications. The data contained in this document is exclusively intended for technically trained staff. It is the responsibility of customer’s technical departments to evaluate the suitability of the product for the intended application and the completeness of the product information given in this document with respect to such application. For further information on the product, technology, delivery terms and conditions and prices please contact your nearest Infineon Technologies office (www.infineon.com). Please note that this product is not qualified according to the AEC Q100 or AEC Q101 documents of the Automotive Electronics Council. WARNINGS Due to technical requirements products may contain dangerous substances. For information on the types in question please contact your nearest Infineon Technologies office. Except as otherwise explicitly approved by Infineon Technologies in a written document signed by authorized representatives of Infineon Technologies, Infineon Technologies’ products may not be used in any applications where a failure of the product or any consequences of the use thereof can reasonably be expected to result in personal injury. Final Data Sheet 11 Rev. 2.2, 2021-03-01