IKQ75N120CH7XKSA1

IKQ75N120CH7 High speed 1200 V TRENCHSTOP™ IGBT 7 Technology High speed 1200 V TRENCHSTOP™ IGBT 7 Technology co-packed with full rated current, soft-commutating, ultra-fast recovery and low Qrr emitter controlled 7 Rapid diode TO-247PLUS – 3Pin Features • • • • • • • • • VCE = 1200 V IC = 75 A Maximum junction temperature Tvjmax = 175°C Best-in-class high speed IGBT co-packed with full rated current, low Qrr and soft-commutating high speed diode Low saturation voltage VCEsat = 1.7 V at Tvj = 25°C Optimized for high efficiency in high speed hard switching topologies (2-L inverter, 3-L NPC T-type, ...) Easy paralleling capability due to positive temperature coefficient in VCEsat Pb-free lead plating; RoHS compliant Complete product spectrum and PSpice Models: http://www.infineon.com/igbt/ 2021-10-27 restricted Copyright © Infineon Te Potential applications • • • • Industrial UPS EV-Charging String inverter Welding Product validation • Qualified for industrial applications according to the relevant tests of JEDEC47/20/22 Description C G E Type Package Marking IKQ75N120CH7 PG-TO247-3-PLUS-NN3.7 K75MCH7 Datasheet www.infineon.com Please read the sections "Important notice" and "Warnings" at the end of this document Revision 1.20 2023-07-21 IKQ75N120CH7 High speed 1200 V TRENCHSTOP™ IGBT 7 Technology Table of contents Table of contents Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .1 Potential applications . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Product validation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Table of contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 1 Package . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2 IGBT . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .3 3 Diode . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .5 4 Characteristics diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7 5 Package outlines . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .14 6 Testing conditions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16 Disclaimer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17 Datasheet 2 Revision 1.20 2023-07-21 IKQ75N120CH7 High speed 1200 V TRENCHSTOP™ IGBT 7 Technology 1 Package 1 Package Table 1 Characteristic values Parameter Symbol Note or test condition Values Unit Min. Typ. Max. Internal emitter inductance measured 5 mm (0.197 in.) from case LE     13   nH Storage temperature Tstg   -55   150 °C Soldering temperature Tsold wave soldering 1.6 mm (0.063 in.) from case for 10 s     260 °C Thermal resistance, junction-ambient Rth(j-a)       40 K/W IGBT thermal resistance, junction-case Rth(j-c)     0.21 0.27 K/W Diode thermal resistance, junction-case Rth(j-c)     0.37 0.48 K/W 2 IGBT Table 2 Maximum rated values Parameter Symbol Note or test condition Collector-emitter voltage DC collector current, limited by Tvjmax Pulsed collector current, tp limited by Tvjmax Turn-off safe operating area VCE IC ICpulse   Values Unit 1200 V Tc = 25 °C 82 A Tc = 100 °C 75 Tvj ≥ 25 °C limited by bondwire   300 A VCC ≤ 800 V, VCE,peak < 1200 V, VGE = 0/15 V, RGoff ≥ 5.3 Ω, Tvj ≤ 175 °C 300 A Gate-emitter voltage VGE   ±20 V Transient gate-emitter voltage VGE tp ≤ 0.5 µs, D