IKW15N120T2
®
TrenchStop 2
nd
generation Series
Low Loss DuoPack : IGBT in 2nd generation TrenchStop® technology
with soft, fast recovery anti-parallel Emitter Controlled Diode
C
Short circuit withstand time – 10s
Designed for :
- Frequency Converters
- Uninterrupted Power Supply
® nd
TrenchStop 2 generation for 1200 V applications offers :
- very tight parameter distribution
- high ruggedness, temperature stable behavior
Easy paralleling capability due to positive temperature coefficient
in VCE(sat)
Low EMI
Low Gate Charge
Very soft, fast recovery anti-parallel Emitter Controlled HE Diode
1
Qualified according to JEDEC for target applications
Pb-free lead plating; RoHS compliant
Complete product spectrum and PSpice Models : http://www.infineon.com/igbt/
Type
IKW15N120T2
G
E
PG-TO-247-3
VCE
IC
VCE(sat),Tj=25°C
Tj,max
Marking Code
Package
1200V
15A
1.75V
175C
K15T1202
PG-TO-247-3
Maximum Ratings
Parameter
Symbol
Value
Unit
Collector-emitter voltage
VCE
1200
V
DC collector current (Tj = 150°C)
IC
A
TC = 25C
30
TC = 110C
15
Pulsed collector current, tp limited by Tjmax
ICpul s
60
Turn off safe operating area
-
60
VCE 1200V, Tj 175C
IF
Diode forward current (Tj = 150°C)
TC = 25C
25
TC = 110C
15
Diode pulsed current, tp limited by Tjmax
IFpul s
60
Gate-emitter voltage
VGE
20
V
tSC
10
s
Ptot
235
W
C
Short circuit withstand time
2)
VGE = 15V, VCC 600V, Tj, start 175C
Power dissipation
TC = 25C
Operating junction temperature
Tj
-40...+175
Storage temperature
Tstg
-55...+150
Soldering temperature, 1.6mm (0.063 in.) from case for 10s
-
260
Wavesoldering only, temperature on leads only
1
2)
J-STD-020 and JESD-022
Allowed number of short circuits: 1s.
IFAG IPC TD VLS
1
Rev. 2.2
12.06.2013
IKW15N120T2
®
TrenchStop 2
nd
generation Series
Thermal Resistance
Parameter
Symbol
Conditions
Max. Value
Unit
RthJC
0.63
K/W
RthJCD
1.12
Characteristic
IGBT thermal resistance,
junction – case
Diode thermal resistance,
junction – case
Thermal resistance,
RthJA
40
junction – ambient
Electrical Characteristic, at Tj = 25 C, unless otherwise specified
Parameter
Symbol
Conditions
Value
min.
typ.
max.
1200
-
-
T j =2 5 C
-
1.7
2.2
T j =1 5 0 C
-
2.1
-
T j =1 7 5 C
-
2.2
-
T j =2 5 C
-
1.75
2.2
T j =1 5 0 C
-
1.8
-
T j =1 7 5 C
-
1.75
-
5.2
5.8
6.4
Unit
Static Characteristic
Collector-emitter breakdown voltage
V ( B R ) C E S V G E = 0V , I C = 5 00 µ A
Collector-emitter saturation voltage
VCE(sat)
Diode forward voltage
VF
V
V G E = 15 V , I C = 15 A
V G E = 0V , I F = 1 5 A
Gate-emitter threshold voltage
VGE(th)
I C = 0. 6m A, V C E = V G E
Zero gate voltage collector current
ICES
V C E = 12 0 0V ,
V G E = 0V
mA
T j =2 5 C
-
-
0.4
T j =1 5 0 C
-
-
4.0
T j =1 7 5 C
-
-
20
Gate-emitter leakage current
IGES
V C E = 0V , V G E =2 0 V
-
-
600
nA
Transconductance
gfs
V C E = 20 V , I C = 15 A
-
8
-
S
IFAG IPC TD VLS
2
Rev. 2.2
12.06.2013
IKW15N120T2
®
TrenchStop 2
nd
generation Series
Dynamic Characteristic
Input capacitance
Ciss
V C E = 25 V ,
-
1000
-
Output capacitance
Coss
V G E = 0V ,
-
100
-
Reverse transfer capacitance
Crss
f= 1 MH z
-
56
-
Gate charge
QGate
V C C = 96 0 V, I C =1 5 A
-
93
-
nC
-
13
-
nH
-
A
pF
V G E = 15 V
LE
Internal emitter inductance
measured 5mm (0.197 in.) from case
Short circuit collector current
1)
IC(SC)
V G E = 15 V ,t S C 10 s
V C C = 6 0 0 V,
T j , s t a r t = 2 5 C
Tj,start = 175C
82
60
Switching Characteristic, Inductive Load, at Tj=25 C
Parameter
Symbol
Conditions
Value
min.
typ.
max.
-
32
-
-
25
-
-
362
-
-
95
-
-
1.25
-
-
0.8
-
-
2.05
-
Unit
IGBT Characteristic
Turn-on delay time
td(on)
Rise time
tr
Turn-off delay time
td(off)
Fall time
tf
Turn-on energy
Eon
Turn-off energy
Eoff
Total switching energy
Ets
T j =2 5 C ,
V C C = 60 0 V, I C = 1 5 A,
V G E = 0/ 15 V ,
R G = 41 . 8,
2)
L =1 2 6n H,
2)
C = 3 4p F
Energy losses include
“tail” and diode
reverse recovery.
Diode reverse recovery time
trr
T j =2 5 C ,
-
300
Diode reverse recovery charge
Qrr
V R = 6 00 V , I F = 1 5 A,
-
1.3
µC
Diode peak reverse recovery current
Irrm
d i F / d t =4 5 0 A/ s
-
10
A
Diode peak rate of fall of reverse
recovery current during t b
d i r r /d t
-
215
ns
mJ
Anti-Parallel Diode Characteristic
1)
2)
-
ns
A/s
Allowed number of short circuits: 1s.
Leakage inductance L a nd Stray capacity C due to dynamic test circuit in Figure E.
IFAG IPC TD VLS
3
Rev. 2.2
12.06.2013
IKW15N120T2
®
TrenchStop 2
nd
generation Series
Switching Characteristic, Inductive Load, at Tj=175 C
Parameter
Symbol
Conditions
Value
min.
typ.
max.
-
31
-
-
30
-
-
450
-
-
176
-
-
1.5
-
-
1.3
-
-
2.8
-
Unit
IGBT Characteristic
Turn-on delay time
td(on)
Rise time
tr
Turn-off delay time
td(off)
Fall time
tf
Turn-on energy
Eon
Turn-off energy
Eoff
Total switching energy
Ets
T j =1 7 5 C
V C C = 60 0 V, I C = 1 5 A,
V G E = 0/ 15 V ,
R G = 4 1. 8 ,
1)
L =3 1 5n H,
1)
C = 3 4p F
Energy losses include
“tail” and diode
reverse recovery.
Diode reverse recovery time
trr
T j =1 7 5 C
-
460
-
ns
Diode reverse recovery charge
Qrr
V R = 6 00 V , I F = 1 5 A,
-
2.65
-
µC
Diode peak reverse recovery current
Irrm
d i F / d t =4 6 0 A/ s
-
13
-
A
Diode peak rate of fall of reverse
recovery current during t b
d i r r /d t
-
123
ns
mJ
Anti-Parallel Diode Characteristic
1)
A/s
Leakage inductance L a nd Stray capacity C due to dynamic test circuit in Figure E.
IFAG IPC TD VLS
4
Rev. 2.2
12.06.2013
IKW15N120T2
®
TrenchStop 2
nd
generation Series
tp=3µs
IC, COLLECTOR CURRENT
IC, COLLECTOR CURRENT
60A
40A
TC=80°C
TC=110°C
Ic
20A
10µs
10A
50µs
150µs
1A
500µs
Ic
20ms
DC
0A
10Hz
0.1A
100Hz
1kHz
10kHz
1V
100kHz
f, SWITCHING FREQUENCY
Figure 1. Collector current as a function of
switching frequency
(Tj 175C, D = 0.5, VCE = 600V,
VGE = 0/+15V, RG = 41.8)
IC, COLLECTOR CURRENT
Ptot, POWER DISSIPATION
100W
100V
1000V
VCE, COLLECTOR-EMITTER VOLTAGE
Figure 2. Safe operating area
(D = 0, TC = 25C,
Tj 175C;VGE=15V)
200W
150W
10V
30A
20A
10A
50W
0W
25°C
50°C
75°C
100°C
125°C
0A
25°C
150°C
TC, CASE TEMPERATURE
Figure 3. Maximum power dissipation as a
function of case temperature
(Tj 175C)
IFAG IPC TD VLS
5
75°C
125°C
TC, CASE TEMPERATURE
Figure 4. Maximum DC Collector current as
a function of case temperature
(VGE 15V, Tj 175C)
Rev. 2.2
12.06.2013
IKW15N120T2
®
TrenchStop 2
60A
20V
VGE=17V
15V
40A
13V
11V
30A
9V
7V
20A
20V
50A
IC, COLLECTOR CURRENT
IC, COLLECTOR CURRENT
generation Series
60A
50A
10A
VGE=17V
15V
40A
13V
11V
30A
9V
7V
20A
10A
0A
0A
0V
1V
2V
3V
4V
0V
VCE, COLLECTOR-EMITTER VOLTAGE
Figure 5. Typical output characteristic
(Tj = 25°C)
VCE(sat), COLLECTOR-EMITT SATURATION VOLTAGE
50A
40A
30A
20A
10A
TJ=175°C
25°C
0A
0V
2V
4V
6V
8V
10V
12V
2V
3V
4V
3.0V
IC=30A
2.5V
2.0V
IC=15A
1.5V
IC=7.5A
1.0V
IC=2A
0.5V
0.0V
0°C
VGE, GATE-EMITTER VOLTAGE
Figure 7. Typical transfer characteristic
(VCE=20V)
IFAG IPC TD VLS
1V
VCE, COLLECTOR-EMITTER VOLTAGE
Figure 6. Typical output characteristic
(Tj = 175°C)
60A
IC, COLLECTOR CURRENT
nd
50°C
100°C
150°C
TJ, JUNCTION TEMPERATURE
Figure 8. Typical collector-emitter
saturation voltage as a function of
junction temperature
(VGE = 15V)
6
Rev. 2.2
12.06.2013
IKW15N120T2
®
TrenchStop 2
generation Series
1000 ns
td(off)
td(off)
tf
t, SWITCHING TIMES
t, SWITCHING TIMES
nd
100ns
td(on)
10ns
100 ns
td(on)
10 ns
tr
7.5A
15.0A
tf
tr
22.5A
IC, COLLECTOR CURRENT
Figure 9. Typical switching times as a
function of collector current
(inductive load, TJ=175°C,
VCE=600V, VGE=0/15V, RG=41.8Ω,
Dynamic test circuit in Figure E)
RG, GATE RESISTOR
Figure 10. Typical switching times as a
function of gate resistor
(inductive load, TJ=175°C,
VCE=600V, VGE=0/15V, IC=15A,
Dynamic test circuit in Figure E)
VGE(th), GATE-EMITT TRSHOLD VOLTAGE
t, SWITCHING TIMES
td(off)
100ns
tf
td(on)
tr
6.5V
6.0V
5.5V
max.
5.0V
4.5V
4.0V
typ.
3.5V
min.
10ns
0°C
50°C
100°C
150°C
TJ, JUNCTION TEMPERATURE
Figure 11. Typical switching times as a
function of junction temperature
(inductive load, VCE=600V,
VGE=0/15V, IC=15A, RG=41.8Ω,
Dynamic test circuit in Figure E)
IFAG IPC TD VLS
0°C
50°C
100°C
150°C
TJ, JUNCTION TEMPERATURE
Figure 12. Gate-emitter threshold voltage as
a function of junction temperature
(IC = 600µA)
7
Rev. 2.2
12.06.2013
IKW15N120T2
®
TrenchStop 2
generation Series
*) Eon and Ets include losses
due to diode recovery
*) Eon and Etsinclude losses
due to diode recovery
E, SWITCHING ENERGY LOSSES
E, SWITCHING ENERGY LOSSES
7.5mJ
nd
Ets*
5.0mJ
Eon*
2.5mJ
Eoff
5.00 mJ
Ets*
3.75 mJ
Eon*
2.50 mJ
Eoff
1.25 mJ
0.0mJ
7.5A
15.0A
22.5A
0.00 mJ
IC, COLLECTOR CURRENT
Figure 13. Typical switching energy losses
as a function of collector current
(inductive load, TJ=175°C,
VCE=600V, VGE=0/15V, RG=41.8Ω,
Dynamic test circuit in Figure E)
Eon*
1.2mJ
Eoff
0.0mJ
5.00mJ
Ets*
3.75mJ
Eon*
2.50mJ
Eoff
1.25mJ
0.00mJ
400V
150°C
TJ, JUNCTION TEMPERATURE
Figure 15. Typical switching energy losses
as a function of junction
temperature
(inductive load, VCE=600V,
VGE=0/15V, IC=15A, RG=41.8Ω,
Dynamic test circuit in Figure E)
IFAG IPC TD VLS
E, SWITCHING ENERGY LOSSES
E, SWITCHING ENERGY LOSSES
2.4mJ
100°C
*) Eon and Ets include losses
due to diode recovery
Ets*
50°C
RG, GATE RESISTOR
Figure 14. Typical switching energy losses
as a function of gate resistor
(inductive load, TJ=175°C,
VCE=600V, VGE=0/15V, IC=15A,
Dynamic test circuit in Figure E)
*) Eon and Ets include losses
due to diode recovery
0°C
500V
600V
700V
VCE, COLLECTOR-EMITTER VOLTAGE
Figure 16. Typical switching energy losses
as a function of collector emitter
voltage
(inductive load, TJ=175°C,
VGE=0/15V, IC=15A, RG=41.8Ω,
Dynamic test circuit in Figure E)
8
Rev. 2.2
12.06.2013
IKW15N120T2
®
TrenchStop 2
nd
generation Series
960V
10V
Ciss
100pF
Coss
5V
Crss
0V
10pF
0nC
25nC
50nC
0V
75nC
15µs
10µs
5µs
0µs
12V
14V
16V
20V
100A
75A
50A
25A
0A
18V
VGE, GATE-EMITTETR VOLTAGE
Figure 19. Short circuit withstand time as a
function of gate-emitter voltage
(VCE=600V, start at TJ175°C)
IFAG IPC TD VLS
10V
VCE, COLLECTOR-EMITTER VOLTAGE
Figure 18. Typical capacitance as a function
of collector-emitter voltage
(VGE=0V, f = 1 MHz)
IC(sc), short circuit COLLECTOR CURRENT
QGE, GATE CHARGE
Figure 17. Typical gate charge
(IC=15 A)
tSC, SHORT CIRCUIT WITHSTAND TIME
1nF
240V
c, CAPACITANCE
VGE, GATE-EMITTER VOLTAGE
15V
12V
14V
16V
18V
VGE, GATE-EMITTETR VOLTAGE
Figure 20. Typical short circuit collector
current as a function of gateemitter voltage
(VCE 600V, Tj,start =175C)
9
Rev. 2.2
12.06.2013
IKW15N120T2
®
25A
VCE
600V
20A
400V
15A
10A
200V
600V
10A
IC
400V
200V
5A
5A
VCE
IC
0V
0A
0us
0.4us
0.8us
0
D=0.5
0.2
-1
10 K/W
0.1
0.05
0.02
0.01
-2
10 K/W
R,(K/W)
0.143
0.217
0.258
0.017
, (s)
3.06*10-4
3.47*10-3
1.71*10-2
2.63*10-1
R1
R2
single pulse
C 1 = 1 /R 1
C 2 = 2 /R 2
0.4us
0.8us
1.2us
t, TIME
Figure 22. Typical turn off behavior
(VGE=15/0V, RG=41.8Ω, Tj = 175C,
Dynamic test circuit in Figure E)
ZthJC, TRANSIENT THERMAL RESISTANCE
10 K/W
0V
0A
0us
1.2us
t, TIME
Figure 21. Typical turn on behavior
(VGE=0/15V, RG=41.8Ω, Tj = 175C,
Dynamic test circuit in Figure E)
ZthJC, TRANSIENT THERMAL RESISTANCE
generation Series
15A
IC, COLLECTOR CURRENT
VCE, COLLECTOR-EMITTER VOLTAGE
TrenchStop 2
nd
0
10 K/W
D=0.5
R,(K/W)
0.291
0.434
0.363
0.028
0.2
0.1
, (s)
2.75*10-4
2.60*10-3
1.48*10-2
1.78*10-1
-1
10 K/W
0.05
R1
R2
0.02
0.01
C 1 = 1 /R 1
C 2 = 2 /R 2
single pulse
-2
10µs
100µs
1ms
10ms
tP, PULSE WIDTH
100ms
Figure 23. IGBT transient thermal resistance
(D = tp / T)
IFAG IPC TD VLS
10
10 K/W
10µs
100µs
1ms
tP, PULSE WIDTH
10ms
100ms
Figure 24. Diode transient thermal
impedance as a function of pulse
width
(D=tP/T)
Rev. 2.2
12.06.2013
IKW15N120T2
®
TrenchStop 2
nd
generation Series
500ns
400ns
300ns
TJ=175°C
200ns
TJ=25°C
100ns
Qrr, REVERSE RECOVERY CHARGE
trr, REVERSE RECOVERY TIME
600ns
0ns
2µC
TJ=25°C
1µC
0µC
400A/µs
800A/µs
1200A/µs
diF/dt, DIODE CURRENT SLOPE
Figure 23. Typical reverse recovery time as
a function of diode current slope
(VR=600V, IF=15A,
Dynamic test circuit in Figure E)
400A/µs
dirr/dt, DIODE PEAK RATE OF FALL
OF REVERSE RECOVERY CURRENT
15A
TJ=25°C
10A
5A
0A
400A/µs
800A/µs
1200A/µs
diF/dt, DIODE CURRENT SLOPE
Figure 25. Typical reverse recovery current
as a function of diode current
slope
(VR=600V, IF=15A,
Dynamic test circuit in Figure E)
IFAG IPC TD VLS
11
1200A/µs
TJ=25°C
-600A/µs
20A
800A/µs
diF/dt, DIODE CURRENT SLOPE
Figure 24. Typical reverse recovery charge
as a function of diode current
slope
(VR=600V, IF=15A,
Dynamic test circuit in Figure E)
TJ=175°C
Irr, REVERSE RECOVERY CURRENT
TJ=175°C
3µC
-500A/µs
-400A/µs
TJ=175°C
-300A/µs
-200A/µs
-100A/µs
-0A/µs
400A/µs
800A/µs
1200A/µs
diF/dt, DIODE CURRENT SLOPE
Figure 26. Typical diode peak rate of fall of
reverse recovery current as a
function of diode current slope
(VR=600V, IF=15A,
Dynamic test circuit in Figure E)
Rev. 2.2
12.06.2013
IKW15N120T2
®
TrenchStop 2
nd
generation Series
60A
TJ=25°C
2.0V IF=30A
175°C
VF, FORWARD VOLTAGE
IF, FORWARD CURRENT
50A
40A
30A
20A
15A
1.5V
7.5A
2A
1.0V
0.5V
10A
0A
0V
1V
0.0V
2V
VF, FORWARD VOLTAGE
Figure 27. Typical diode forward current as
a function of forward voltage
IFAG IPC TD VLS
12
0°C
50°C
100°C
150°C
TJ, JUNCTION TEMPERATURE
Figure 28. Typical diode forward voltage as a
function of junction temperature
Rev. 2.2
12.06.2013
IKW15N120T2
®
TrenchStop 2
IFAG IPC TD VLS
13
nd
generation Series
Rev. 2.2
12.06.2013
IKW15N120T2
®
TrenchStop 2
nd
generation Series
i,v
tr r =tS +tF
diF /dt
Qr r =QS +QF
tr r
IF
tS
QS
Ir r m
tF
QF
10% Ir r m
dir r /dt
90% Ir r m
t
VR
Figure C. Definition of diodes
switching characteristics
1
2
r1
r2
n
rn
Tj (t)
p(t)
r1
r2
rn
Figure A. Definition of switching times
TC
Figure D. Thermal equivalent
circuit
Figure E. Dynamic test circuit
Figure B. Definition of switching losses
IFAG IPC TD VLS
14
Rev. 2.2
12.06.2013
IKW15N120T2
®
TrenchStop 2
nd
generation Series
Published by
Infineon Technologies AG
81726 Munich, Germany
© 2013 Infineon Technologies AG
All Rights Reserved.
Legal Disclaimer
The information given in this document shall in no event be regarded as a guarantee of conditions or
characteristics. With respect to any examples or hints given herein, any typical values stated herein and/or
any information regarding the application of the device, Infineon Technologies hereby disclaims any and all
warranties and liabilities of any kind, including without limitation, warranties of non-infringement of intellectual
property rights of any third party.
Information
For further information on technology, delivery terms and conditions and prices, please contact the nearest
Infineon Technologies Office (www.infineon.com).
Warnings
Due to technical requirements, components may contain dangerous substances. For information on the
types in question, please contact the nearest Infineon Technologies Office.
The Infineon Technologies component described in this Data Sheet may be used in life-support devices or
systems and/or automotive, aviation and aerospace applications or systems only with the express written
approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the
failure of that life-support, automotive, aviation and aerospace device or system or to affect the safety or
effectiveness of that device or system. Life support devices or systems are intended to be implanted in the
human body or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable
to assume that the health of the user or other persons may be endangered.
IFAG IPC TD VLS
15
Rev. 2.2
12.06.2013