IKW40N120T2FKSA1

nd IKW40N120T2 TRENCHSTOP™ 2 Generation Series Low Loss DuoPack : IGBT in 2nd generation TRENCHSTOP™ with soft, fast recovery anti-parallel Emitter Controlled Diode C            Best in class TO247 Short circuit withstand time – 10s Designed for : - Frequency Converters - Uninterrupted Power Supply TRENCHSTOP™ 2nd generation for 1200 V applications offers : - very tight parameter distribution - high ruggedness, temperature stable behavior Easy paralleling capability due to positive temperature coefficient in VCE(sat) Low EMI Low Gate Charge Very soft, fast recovery anti-parallel Emitter Controlled HE Diode Qualified according to JEDEC1 for target applications Pb-free lead plating; RoHS compliant Complete product spectrum and PSpice Models : http://www.infineon.com/igbt/ Type IKW40N120T2 G E PG-TO-247-3 VCE IC VCE(sat),Tj=25°C Tj,max Marking Code Package 1200V 40A 1.75V 175C K40T1202 PG-TO-247-3 Maximum Ratings Parameter Symbol Value Unit Collector-emitter voltage VCE 1200 V DC collector current (Tj=150°C) IC A 2 TC = 25C 75 TC = 110C 40 Pulsed collector current, tp limited by Tjmax ICpuls 160 Turn off safe operating area - 160 VCE  1200V, Tj  175C DC Diode forward current (Tj=150°C) IF TC = 25C 752 TC = 110C 40 Diode pulsed current, tp limited by Tjmax IFpuls 160 Gate-emitter voltage VGE 20 V tSC 10 s Ptot 480 W C Short circuit withstand time 3) VGE = 15V, VCC  600V, Tj,start  175C Power dissipation TC = 25C Operating junction temperature Tj -40...+175 Storage temperature Tstg -55...+150 Soldering temperature, 1.6mm (0.063 in.) from case for 10s - 260 Wavesoldering only, temperature on leads only 1 2 3) J-STD-020 and JESD-022 Limited by bond wire Allowed number of short circuits: 1s. IFAG IPC TD VLS 1 Rev. 2.4 23.09.2014 nd IKW40N120T2 TRENCHSTOP™ 2 Generation Series Thermal Resistance Parameter Symbol Conditions Max. Value Unit RthJC 0.31 K/W RthJCD 0.53 RthJA 40 Characteristic IGBT thermal resistance, junction – case Diode thermal resistance, junction – case Thermal resistance, junction – ambient Electrical Characteristic, at Tj = 25 C, unless otherwise specified Parameter Symbol Conditions Value min. typ. max. 1200 - - T j =2 5  C - 1.75 2.2 T j =1 5 0  C - 2.25 - T j =1 7 5  C - 2.3 - T j =2 5  C - 1.75 2.2 T j =1 5 0  C - 1.80 - T j =1 7 5  C - 1.80 - 5.2 5.8 6.4 Unit Static Characteristic Collector-emitter breakdown voltage V(BR)CES V G E =0 V , I C = 5 0 0 µ A Collector-emitter saturation voltage VCE(sat) VGE = 15V, IC=40A Diode forward voltage VF V V G E =0 V , I F =4 0 A Gate-emitter threshold voltage VGE(th) I C = 1 . 5 m A , V C E =V G E Zero gate voltage collector current ICES V C E =1 2 0 0 V , V G E =0 V mA T j =2 5  C - - 0.4 T j =1 5 0  C - - 4.0 T j =1 7 5  C - - 20 Gate-emitter leakage current IGES V C E =0 V , V G E = 2 0 V - - 200 nA Transconductance gfs V C E =2 0 V , I C =4 0 A - 21 - S Rev. 2.4 23.09.2014 IFAG IPC TD VLS 2 nd IKW40N120T2 TRENCHSTOP™ 2 Generation Series Dynamic Characteristic Input capacitance Ciss V C E =2 5 V , - 2360 - pF Output capacitance Coss V G E =0 V , - 230 - Reverse transfer capacitance Crss f =1 M H z - 125 - Gate charge QGate V C C =9 6 0 V , I C =4 0 A - 192 - nC - 13 - nH - A V G E =1 5 V Internal emitter inductance LE measured 5mm (0.197 in.) from case Short circuit collector current1) IC(SC) V G E =1 5 V , t S C 1 0 s VCC = 600V, Tj, start = 2 5C Tj. start = 1 75C 220 156 Switching Characteristic, Inductive Load, at Tj=25 C Parameter Symbol Conditions Value min. typ. max. - 33 - - 28 - - 314 - - 94 - - 3.2 - - 2.05 - - 5.25 - Unit IGBT Characteristic Turn-on delay time td(on) Rise time tr Turn-off delay time td(off) Fall time tf Turn-on energy Eon Turn-off energy Eoff Total switching energy Ets T j =2 5  C , V C C =6 0 0 V , I C =4 0 A , V G E =0 / 1 5 V , RG=12, L  2 ) =8 0 n H, C  2 ) =6 7 p F Energy losses include “tail” and diode reverse recovery. Diode reverse recovery time trr T j =2 5  C , - 285 Diode reverse recovery charge Qrr V R = 6 0 0 V , I F =4 0 A , - 3.3 µC Diode peak reverse recovery current Irrm d i F / d t =9 5 0 A / s - 23 A Diode peak rate of fall of reverse recovery current during t b dirr/dt - 350 ns mJ Anti-Parallel Diode Characteristic 1) 2) - ns A/s Allowed number of short circuits: 1s. Leakage inductance L  a n d Stray capacity C  due to dynamic test circuit in Figure E. IFAG IPC TD VLS 3 Rev. 2.4 23.09.2014 nd IKW40N120T2 TRENCHSTOP™ 2 Generation Series Switching Characteristic, Inductive Load, at Tj=175 C Parameter Symbol Conditions Value min. typ. max. - 32 - - 28 - - 405 - - 195 - - 4.5 - - 3.8 - - 8.3 - Unit IGBT Characteristic Turn-on delay time td(on) Rise time tr Turn-off delay time td(off) Fall time tf Turn-on energy Eon Turn-off energy Eoff Total switching energy Ets T j =1 7 5  C V C C =6 0 0 V , I C =4 0 A , V G E =0 / 1 5 V , RG= 12, L  1 ) =1 8 0 n H, C  1 ) =6 7 p F Energy losses include “tail” and diode reverse recovery. Diode reverse recovery time trr T j =1 7 5  C - 480 - ns Diode reverse recovery charge Qrr V R = 6 0 0 V , I F =4 0 A , - 6.6 - µC Diode peak reverse recovery current Irrm d i F / d t =9 5 0 A / s - 31 - A Diode peak rate of fall of reverse recovery current during t b dirr/dt - 200 ns mJ Anti-Parallel Diode Characteristic 1) A/s Leakage inductance L  a n d Stray capacity C  due to dynamic test circuit in Figure E. IFAG IPC TD VLS 4 Rev. 2.4 23.09.2014 nd IKW40N120T2 TRENCHSTOP™ 2 Generation Series 140A TC=80°C 10µs IC, COLLECTOR CURRENT IC, COLLECTOR CURRENT tp=3µs 100A 160A 120A 100A 80A TC=110°C 60A Ic 50µs 10A 150µs 500µs 1A 20ms 40A Ic DC 20A 0A 10Hz Figure 1. 0.1A 100Hz 1kHz 10kHz 1V 100kHz f, SWITCHING FREQUENCY Collector current as a function of switching frequency (Tj  175C, D = 0.5, VCE = 600V, VGE = 0/+15V, RG = 12) 10V 100V 1000V VCE, COLLECTOR-EMITTER VOLTAGE Figure 2. Safe operating area (D = 0, TC = 25C, Tj 175C;VGE=15V) 70A IC, COLLECTOR CURRENT 60A 300W 200W Ptot, POWER DISSIPATION 400W 50A 40A 30A 20A 100W 10A 0W 25°C Figure 3. 50°C 75°C 100°C 125°C 0A 25°C 150°C TC, CASE TEMPERATURE Maximum power dissipation as a function of case temperature (Tj  175C) IFAG IPC TD VLS Figure 4. 5 75°C 125°C TC, CASE TEMPERATURE Maximum collector current as a function of case temperature (VGE  15V, Tj  175C) Rev. 2.4 23.09.2014 IKW40N120T2 nd TRENCHSTOP™ 2 Generation Series 150A 150A 20V 20V 125A VGE=17V IC, COLLECTOR CURRENT IC, COLLECTOR CURRENT 125A 15V 100A 13V 11V 75A 9V 7V 50A 11V 7V 0A 2V 3V 4V 0V 5V VCE(sat), COLLECTOR-EMITTER SATURATION VOLTAGE 120A 100A 80A 60A 40A TJ=175°C 25°C 0A 0V Figure 7. 2V 4V 6V 8V 10V 12V VGE, GATE-EMITTER VOLTAGE Typical transfer characteristic (VCE=20V) IFAG IPC TD VLS 1V 2V 3V 4V 5V VCE, COLLECTOR-EMITTER VOLTAGE Figure 6. Typical output characteristic (Tj = 175°C) 140A 20A 9V 50A 0A 1V 13V 75A 25A VCE, COLLECTOR-EMITTER VOLTAGE Figure 5. Typical output characteristic (Tj = 25°C) IC, COLLECTOR CURRENT 15V 100A 25A 0V VGE=17V 3.5V 2.5V 2.0V IC=40A 1.5V IC=20A 1.0V IC=8A 0.5V 0.0V -50°C Figure 8. 6 IC=80A 3.0V 0°C 50°C 100°C 150°C TJ, JUNCTION TEMPERATURE Typical collector-emitter saturation voltage as a function of junction temperature (VGE = 15V) Rev. 2.4 23.09.2014 nd IKW40N120T2 TRENCHSTOP™ 2 Generation Series 1000ns td(off) 1000 ns 100ns t, SWITCHING TIMES t, SWITCHING TIMES td(off) tf td(on) 10ns tr tf 100 ns td(on) 10 ns tr 1ns 20A 60A  IC, COLLECTOR CURRENT Typical switching times as a function of collector current (inductive load, TJ=175°C, VCE=600V, VGE=0/15V, RG=12Ω, Dynamic test circuit in Figure E)    RG, GATE RESISTOR Figure 10. Typical switching times as a function of gate resistor (inductive load, TJ=175°C, VCE=600V, VGE=0/15V, IC=40A, Dynamic test circuit in Figure E) t, SWITCHING TIMES VGE(th), GATE-EMITTER THRESHOLD VOLTAGE Figure 9. 40A TJ, JUNCTION TEMPERATURE Figure 11. Typical switching times as a function of junction temperature (inductive load, VCE=600V, VGE=0/15V, IC=40A, RG=12Ω, Dynamic test circuit in Figure E) IFAG IPC TD VLS 7 TJ, JUNCTION TEMPERATURE Figure 12. Gate-emitter threshold voltage as a function of junction temperature (IC = 1.5mA) Rev. 2.4 23.09.2014 IKW40N120T2 nd TRENCHSTOP™ 2 Generation Series *) Eon and Ets include losses due to diode recovery *) Eon and Etsinclude losses due to diode recovery Ets* 15.0mJ 10.0mJ Eon* 5.0mJ Eoff E, SWITCHING ENERGY LOSSES E, SWITCHING ENERGY LOSSES 20.0mJ 10.0 mJ 7.5 mJ Eon* 20A 40A 2.5 mJ 60A IC, COLLECTOR CURRENT Figure 13. Typical switching energy losses as a function of collector current (inductive load, TJ=175°C, VCE=600V, VGE=0/15V, RG=12Ω, Dynamic test circuit in Figure E) Eoff 5.0 mJ 0.0 mJ 0.0mJ  E, SWITCHING ENERGY LOSSES E, SWITCHING ENERGY LOSSES Eoff Eon* 2.5mJ 0.0mJ 100°C Eon* 7.5mJ Ets* 5.0mJ Eoff 2.5mJ 0.0mJ 400V 150°C TJ, JUNCTION TEMPERATURE Figure 15. Typical switching energy losses as a function of junction temperature (inductive load, VCE=600V, VGE=0/15V, IC=40A, RG=12Ω, Dynamic test circuit in Figure E) IFAG IPC TD VLS  10.0mJ 5.0mJ 50°C  *) Eon and Ets include losses due to diode recovery Ets* 0°C  RG, GATE RESISTOR Figure 14. Typical switching energy losses as a function of gate resistor (inductive load, TJ=175°C, VCE=600V, VGE=0/15V, IC=40A, Dynamic test circuit in Figure E) *) Eon and Ets include losses due to diode recovery 7.5mJ Ets* 8 500V 600V 700V VCE, COLLECTOR-EMITTER VOLTAGE Figure 16. Typical switching energy losses as a function of collector emitter voltage (inductive load, TJ=175°C, VGE=0/15V, IC=40A, RG=12Ω, Dynamic test circuit in Figure E) Rev. 2.4 23.09.2014 IKW40N120T2 nd TRENCHSTOP™ 2 Generation Series Ciss 240V 960V 10V c, CAPACITANCE VGE, GATE-EMITTER VOLTAGE 15V 1nF Coss 5V 100pF 0V 0nC 50nC 100nC 0V 150nC IC(sc), SHORT CIRCUIT COLLECTOR CURRENT 15µs 10µs 5µs 12V 14V 16V 20V 300A 200A 100A 0A 18V VGE, GATE-EMITTER VOLTAGE Figure 19. Short circuit withstand time as a function of gate-emitter voltage (VCE=600V, start at TJ  175°C) IFAG IPC TD VLS 10V VCE, COLLECTOR-EMITTER VOLTAGE Figure 18. Typical capacitance as a function of collector-emitter voltage (VGE=0V, f = 1 MHz) tSC, SHORT CIRCUIT WITHSTAND TIME QGE, GATE CHARGE Figure 17. Typical gate charge (IC=40 A) 0µs Crss 12V 14V 16V 18V VGE, GATE-EMITTER VOLTAGE Figure 20. Typical short circuit collector current as a function of gate-emitter voltage (VCE  600V, Tj,start = 175C) 9 Rev. 2.4 23.09.2014 IKW40N120T2 nd VCE 600V 60A 400V 40A 200V 20A IC, COLLECTOR CURRENT VCE, COLLECTOR-EMITTER VOLTAGE TRENCHSTOP™ 2 Generation Series 40A IC 400V 200V 20A VCE IC 0V 0.4us 0us 0.8us 0A 1.2us 0A 0us D=0.5 -1 10 K/W 0.2 0.1 R,(K/W) 0.064 0.074 0.162 0.010 0.05 -2 10 K/W , (s) 3.67*10-4 3.92*10-3 1.92*10-2 3.40*10-1 0.02 0.01 R1 R2 single pulse C 1 =  1 /R 1 1.2us 0.8us R,(K/W) 0.112 0.163 0.234 0.015 R1 R2 C 1 =  1 /R 1 100µs 1ms 10ms C 2 =  2 /R 2 100ms tP, PULSE WIDTH Figure 23. IGBT transient thermal impedance (D = tp / T) IFAG IPC TD VLS , (s) 2.80*10-4 3.27*10-3 1.71*10-2 2.68*10-1 C 2 =  2 /R 2 -3 10 K/W 10µs 0V 0.4us t, TIME Figure 22. Typical turn off behavior (VGE=15/0V, RG=12Ω, Tj = 175C, Dynamic test circuit in Figure E) ZthJC, TRANSIENT THERMAL IMPEDANCE t, TIME Figure 21. Typical turn on behavior (VGE=0/15V, RG=12Ω, Tj = 175C, Dynamic test circuit in Figure E) ZthJC, TRANSIENT THERMAL IMPEDANCE 600V 60A 10 tP, PULSE WIDTH Figure 24. Diode transient thermal impedance as a function of pulse width (D=tP/T) Rev. 2.4 23.09.2014 nd IKW40N120T2 TRENCHSTOP™ 2 Generation Series 8µC 500ns TJ=175°C 400ns 300ns 200ns TJ=25°C TJ=175°C Qrr, REVERSE RECOVERY CHARGE trr, REVERSE RECOVERY TIME 600ns 6µC 4µC TJ=25°C 2µC 100ns 0ns 400A/µs 800A/µs 1200A/µs 0µC 400A/µs 1600A/µs diF/dt, DIODE CURRENT SLOPE Figure 23. Typical reverse recovery time as a function of diode current slope (VR=600V, IF=40A, Dynamic test circuit in Figure E) 800A/µs 1200A/µs 1600A/µs diF/dt, DIODE CURRENT SLOPE Figure 24. Typical reverse recovery charge as a function of diode current slope (VR=600V, IF=40A, Dynamic test circuit in Figure E) -1000A/µs TJ=25°C TJ=175°C 35A dirr/dt, DIODE PEAK RATE OF FALL OF REVERSE RECOVERY CURRENT Irr, REVERSE RECOVERY CURRENT 40A 30A TJ=25°C 25A 20A 15A 10A 5A -800A/µs TJ=175°C -600A/µs -400A/µs -200A/µs 0A 400A/µs 800A/µs 1200A/µs 1600A/µs -0A/µs 400A/µs diF/dt, DIODE CURRENT SLOPE Figure 25. Typical reverse recovery current as a function of diode current slope (VR=600V, IF=40A, Dynamic test circuit in Figure E) IFAG IPC TD VLS 11 800A/µs 1200A/µs 1600A/µs diF/dt, DIODE CURRENT SLOPE Figure 26. Typical diode peak rate of fall of reverse recovery current as a function of diode current slope (VR=600V, IF=40A, Dynamic test circuit in Figure E) Rev. 2.4 23.09.2014 IKW40N120T2 nd TRENCHSTOP™ 2 Generation Series 150A 2.5V TJ = 25°C IF=80A 175°C VF, FORWARD VOLTAGE IF, FORWARD CURRENT 125A 100A 75A 50A 2.0V 40A 1.5V 1.0V 20A 8A 0.5V 25A 0A 0V 1V 2V 0.0V 3V VF, FORWARD VOLTAGE Figure 27. Typical diode forward current as a function of forward voltage IFAG IPC TD VLS 12 0°C 50°C 100°C 150°C TJ, JUNCTION TEMPERATURE Figure 28. Typical diode forward voltage as a function of junction temperature Rev. 2.4 23.09.2014 nd IKW40N120T2 TRENCHSTOP™ 2 Generation Series IFAG IPC TD VLS 13 Rev. 2.4 23.09.2014 IKW40N120T2 nd TRENCHSTOP™ 2 Generation Series i,v tr r =tS +tF diF /dt Qr r =QS +QF tr r IF tS QS Ir r m tF QF 10% Ir r m dir r /dt 90% Ir r m t VR Figure C. Definition of diodes switching characteristics 1 2 r1 n r2 rn Tj (t) p(t) r1 r2 rn Figure A. Definition of switching times TC Figure D. Thermal equivalent circuit Figure E. Dynamic test circuit . Figure B. Definition of switching losses IFAG IPC TD VLS 14 Rev. 2.4 23.09.2014 nd IKW40N120T2 TRENCHSTOP™ 2 Generation Series Published by Infineon Technologies AG 81726 Munich, Germany © 2014 Infineon Technologies AG All Rights Reserved. Legal Disclaimer The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics. With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation, warranties of non-infringement of intellectual property rights of any third party. Information For further information on technology, delivery terms and conditions and prices, please contact the nearest Infineon Technologies Office (www.infineon.com). Warnings Due to technical requirements, components may contain dangerous substances. For information on the types in question, please contact the nearest Infineon Technologies Office. The Infineon Technologies component described in this Data Sheet may be used in life-support devices or systems and/or automotive, aviation and aerospace applications or systems only with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support, automotive, aviation and aerospace device or system or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. IFAG IPC TD VLS 15 Rev. 2.4 23.09.2014