IKW40N65ET7
Low Loss Duopack: IGBT 7
Low Loss Duopack: IGBT 7 with Trench and Fieldstop technology
Features
•
•
•
•
•
•
•
•
•
•
•
•
VCE = 650 V
IC = 40 A
Very Low VCEsat
Low turn-off losses
Short tail current
Reduced EMI
Humidity robust design
Very soft, fast recovery antiparallel diode
Maximum junction temperature Tvjmax = 175°C
Qualified according to JEDEC for target applications
Pb-free lead plating; RoHS compliant
Complete product spectrum and PSpice Models: http://www.infineon.com/igbt7/
G
C
E
Potential applications
•
•
•
•
•
•
•
Servo Drives
General Purpose Drives (GPD)
Industrial UPS
Industrial SMPS
Energy Generation
Solar Optimizer
Solar String Inverter
Product validation
• Product Validation: Qualified for industrial applications according to the relevant tests of
JEDEC47/20/22
Description
Package pin definition:
• Pin C & backside - Collector
• Pin E - Emitter
• Pin G - Gate
C
G
E
Type
Package
Marking
IKW40N65ET7
PG-TO247-3
K40EET7
Datasheet
www.infineon.com
Please read the Important Notice and Warnings at the end of this document
1.00
2021-06-29
IKW40N65ET7
Low Loss Duopack: IGBT 7
Table of contents
Table of contents
Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .1
Potential applications . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
Product validation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
Table of contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2
1
Package . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
2
IGBT . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .3
3
Diode . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .6
4
Characteristics diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9
5
Package outlines . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .16
6
Testing conditions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17
Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 18
Disclaimer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 19
Datasheet
2
1.00
2021-06-29
IKW40N65ET7
Low Loss Duopack: IGBT 7
1 Package
1
Package
Table 1
Characteristic values
Parameter
Symbol Note or test condition
Values
Min.
Internal emitter inductance
measured 5 mm (0.197 in)
from case
LE
Storage temperature
Tstg
Thermal resistance,
junction-ambient
2
13.0
-55
nH
°C
260
°C
M
0.6
Nm
Rth(j-a)
40
K/W
wave soldering 1.6 mm (0.063 in.) from case
for 10 s
IGBT
Table 2
Maximum rated values
Parameter
Collector-emitter voltage
Symbol Note or test condition
VCE
DC collector current, limited
by Tvjmax
IC
Pulsed collector current, tp
limited by Tvjmax 1)
ICpuls
Turn-off safe operating
area2)
Values
Unit
650
V
TC = 25 °C
76
A
TC = 100 °C
49.5
Tvj ≥ 25 °C
VCE ≤ 650 V, tP = 1 µs, Tvj ≤ 175 °C
Gate-emitter voltage
VGE
Transient gate-emitter
voltage
VGE
tp ≤ 10 µs, D < 0.010
Short circuit withstand time
tSC
VGE = 15 V, Allowed
VCC ≤ 330 V,
number of short circuits Tvj = 100 °C
< 1000, Time between
VCC ≤ 400 V,
short circuits ≥ 1.0 s
Tvj = 150 °C
Power dissipation
1)
2)
Max.
150
Soldering temperature
Mounting torque, M3 screw
Maximum of mounting
processes: 3
Typ.
Unit
Ptot
120
A
120
A
±20
V
±30
V
5
µs
3
TC = 25 °C
230.8
TC = 100 °C
115.4
W
Defined by design. Not subject to production test.
Clamped inductive load current test for each device, IC=120A, VCC=400V, Tc=25°C, VGE=20V, L=80µH, RG=10Ω
Datasheet
3
1.00
2021-06-29
IKW40N65ET7
Low Loss Duopack: IGBT 7
2 IGBT
Table 3
Characteristic values
Parameter
Symbol Note or test condition
Values
Min.
Collector-emitter saturation
voltage
VCE sat
IC = 40.0 A, VGE = 15 V
Unit
Typ.
Max.
Tvj = 25 °C
1.35
1.65
V
Tvj = 125 °C
1.50
Tvj = 175 °C
1.60
5.70
V
40
µA
100
nA
Gate-emitter threshold
voltage
VGEth
IC = 0.40 mA, VCE = VGE
Zero gate voltage collector
current
ICES
VCE = 650 V, VGE = 0 V
Gate-emitter leakage current
IGES
VCE = 0 V, VGE = 20 V
Transconductance
gfs
IC = 40.0 A, VCE = 20 V
21
S
Short circuit collector
current
ISC
VGE = 15 V, tSC ≤ 3 µs, Allowed number of
short circuits < 1000 , Time between short
circuits ≥ 1.0 s
205
A
Input capacitance
Cies
VCE = 25 V, VGE = 0 V, f = 1000 kHz
2475
pF
Output capacitance
Coes
VCE = 25 V, VGE = 0 V, f = 1000 kHz
77
pF
Reverse transfer capacitance
Cres
VCE = 25 V, VGE = 0 V, f = 1000 kHz
25
pF
Gate charge
QG
IC = 40.0 A, VGE = 15 V, VCE = 520 V
235
nC
Turn-on delay time
tdon
VCE = 400 V, VGE = 15 V,
RGon = 10.0 Ω,
RGoff = 10.0 Ω,
Lσ = 32 nH, Cσ = 30 pF
Tvj = 25 °C,
IC = 40.0 A
20
ns
Tvj = 25 °C,
IC = 20.0 A
19
Tvj = 175 °C,
IC = 40.0 A
23
Tvj = 175 °C,
IC = 20.0 A
21
Tvj = 25 °C,
IC = 40.0 A
15
Tvj = 25 °C,
IC = 20.0 A
9
Tvj = 175 °C,
IC = 40.0 A
20
Tvj = 175 °C,
IC = 20.0 A
12
Rise time (inductive load)
Datasheet
4.30
Tvj = 25 °C
Tvj = 175 °C
tr
VCE = 400 V, VGE = 15 V,
RGon = 10.0 Ω,
RGoff = 10.0 Ω,
Lσ = 32 nH, Cσ = 30 pF
4
5.00
900
ns
1.00
2021-06-29
IKW40N65ET7
Low Loss Duopack: IGBT 7
2 IGBT
Table 3
Characteristic values (continued)
Parameter
Symbol Note or test condition
Values
Min.
Turn-off delay time
Fall time (inductive load)
Turn-on energy
Turn-off energy
Datasheet
tdoff
tf
Eon
Eoff
VCE = 400 V, VGE = 15 V,
RGon = 10.0 Ω,
RGoff = 10.0 Ω,
Lσ = 32 nH, Cσ = 30 pF
VCE = 400 V, VGE = 15 V,
RGon = 10.0 Ω,
RGoff = 10.0 Ω,
Lσ = 32 nH, Cσ = 30 pF
VCE = 400 V, VGE = 15 V,
RGon = 10.0 Ω,
RGoff = 10.0 Ω,
Lσ = 32 nH, Cσ = 30 pF
VCE = 400 V, VGE = 15 V,
RGon = 10.0 Ω,
RGoff = 10.0 Ω,
Lσ = 32 nH, Cσ = 30 pF
5
Typ.
Tvj = 25 °C,
IC = 40.0 A
310
Tvj = 25 °C,
IC = 20.0 A
330
Tvj = 175 °C,
IC = 40.0 A
380
Tvj = 175 °C,
IC = 20.0 A
430
Tvj = 25 °C,
IC = 40.0 A
13
Tvj = 25 °C,
IC = 20.0 A
17
Tvj = 175 °C,
IC = 40.0 A
57
Tvj = 175 °C,
IC = 20.0 A
70
Tvj = 25 °C,
IC = 40.0 A
1.05
Tvj = 25 °C,
IC = 20.0 A
0.45
Tvj = 175 °C,
IC = 40.0 A
1.65
Tvj = 175 °C,
IC = 20.0 A
0.84
Tvj = 25 °C,
IC = 40.0 A
0.59
Tvj = 25 °C,
IC = 20.0 A
0.26
Tvj = 175 °C,
IC = 40.0 A
1.13
Tvj = 175 °C,
IC = 20.0 A
0.59
Unit
Max.
ns
ns
mJ
mJ
1.00
2021-06-29
IKW40N65ET7
Low Loss Duopack: IGBT 7
3 Diode
Table 3
Characteristic values (continued)
Parameter
Symbol Note or test condition
Values
Min.
Total switching energy
IGBT thermal resistance,
junction-case
Operating junction
temperature
Note:
3
Table 4
Ets
Tvj = 25 °C,
IC = 40.0 A
1.64
Tvj = 25 °C,
IC = 20.0 A
0.71
Tvj = 175 °C,
IC = 40.0 A
2.78
Tvj = 175 °C,
IC = 20.0 A
1.43
Rthjc
Tvj
-40
mJ
0.65
K/W
175
°C
Diode
Maximum rated values
Symbol Note or test condition
Repetitive peak reverse
voltage
VRRM
Diode forward current,
limited by Tvjmax
IF
Diode pulsed current,
limited by Tvjmax
IFpuls
Values
Unit
650
V
TC = 25 °C
72
A
TC = 100 °C
43.5
Tvj ≥ 25 °C
limited by bondwire
120
A
Values
Unit
Characteristic values
Parameter
Symbol Note or test condition
Min.
Diode forward voltage
Reverse leakage current
VF
IR
IF = 40.0 A
VR = 650 V
Typ.
Max.
Tvj = 25 °C
1.65
2.00
V
Tvj = 125 °C
1.60
Tvj = 175 °C
1.55
40
µA
Tvj = 25 °C
Tvj = 175 °C
Datasheet
Max.
Electrical Characteristic, at Tvj=25°C, unless otherwise specified.
Parameter
Table 5
VCE = 400 V, VGE = 15 V,
RGon = 10.0 Ω,
RGoff = 10.0 Ω,
Lσ = 32 nH, Cσ = 30 pF
Typ.
Unit
6
900
1.00
2021-06-29
IKW40N65ET7
Low Loss Duopack: IGBT 7
3 Diode
Table 5
Characteristic values (continued)
Parameter
Symbol Note or test condition
Values
Min.
Diode reverse recovery time
Diode reverse recovery
charge
Diode peak reverse recovery
current
Datasheet
trr
Qrr
Irrm
VR = 650 V
VR = 650 V
VR = 650 V
7
Typ.
Tvj = 25 °C,
IF = 40.0 A,
-diF/dt = 1779 A/µs
85
Tvj = 25 °C,
IF = 20.0 A,
-diF/dt = 2381 A/µs
59
Tvj = 175 °C,
IF = 40.0 A,
-diF/dt = 1660 A/µs
145
Tvj = 175 °C,
IF = 20.0 A,
-diF/dt = 1881 A/µs
105
Tvj = 25 °C,
IF = 40.0 A,
-diF/dt = 1779 A/µs
0.95
Tvj = 25 °C,
IF = 20.0 A,
-diF/dt = 2381 A/µs
0.70
Tvj = 175 °C,
IF = 40.0 A,
-diF/dt = 1660 A/µs
2.80
Tvj = 175 °C,
IF = 20.0 A,
-diF/dt = 1881 A/µs
2.02
Tvj = 25 °C,
IF = 40.0 A,
-diF/dt = 1779 A/µs
22.0
Tvj = 25 °C,
IF = 20.0 A,
-diF/dt = 2381 A/µs
24.5
Tvj = 175 °C,
IF = 40.0 A,
-diF/dt = 1660 A/µs
35.0
Tvj = 175 °C,
IF = 20.0 A,
-diF/dt = 1881 A/µs
35.0
Unit
Max.
ns
µC
A
1.00
2021-06-29
IKW40N65ET7
Low Loss Duopack: IGBT 7
3 Diode
Table 5
Characteristic values (continued)
Parameter
Symbol Note or test condition
Values
Min.
Diode peak rate off fall of
reverse recovery current
Diode thermal resistance,
junction-case
Operating junction
temperature
Note:
Datasheet
dIrr/dt
VR = 650 V
Tvj = 25 °C,
IF = 40.0 A,
-diF/dt = 1779 A/µs
-380
Tvj = 25 °C,
IF = 20.0 A,
-diF/dt = 2381 A/µs
-520
Tvj = 175 °C,
IF = 40.0 A,
-diF/dt = 1660 A/µs
-290
Tvj = 175 °C,
IF = 20.0 A,
-diF/dt = 1881 A/µs
-425
Rthjc
Tvj
Typ.
-40
Unit
Max.
A/µs
0.90
K/W
175
°C
For optimum lifetime and reliability, Infineon recommends operating conditions that do not exceed 80% of
the maximum ratings stated in this datasheet.
8
1.00
2021-06-29
IKW40N65ET7
Low Loss Duopack: IGBT 7
4 Characteristics diagrams
4
Characteristics diagrams
Power dissipation as a function of case temperature,
IGBT
Ptot = f(Tc)
Tvj ≤ 175 °C
240
Collector current as a function of case temperature,
IGBT
IC = f(Tc)
Tvj ≤ 175 °C, VGE ≥ 15 V
80
70
200
60
160
50
120
40
30
80
20
40
10
0
0
25
50
75
100
125
150
175
25
Typical output characteristic, IGBT
IC = f(VCE)
Tvj = 25 °C
75
100
125
150
175
Typical output characteristic, IGBT
IC = f(VCE)
Tvj = 175 °C
120
120
100
100
80
80
60
60
40
40
20
20
0
0
0
Datasheet
50
1
2
3
4
5
0
9
1
2
3
4
5
1.00
2021-06-29
IKW40N65ET7
Low Loss Duopack: IGBT 7
4 Characteristics diagrams
Typical transfer characteristic, IGBT
IC = f(VGE)
VCE = 20 V
Typical collector-emitter saturation voltage as a
function of junction temperature, IGBT
VCEsat = f(Tvj)
VGE = 15 V
120
3.0
100
2.5
80
2.0
60
1.5
40
1.0
20
0.5
0.0
0
2
4
6
8
10
12
25
14
Gate-emitter threshold voltage as a function of
junction temperature, IGBT
VGEth = f(Tvj)
IC = 0.40 mA
50
75
100
125
150
175
Typical switching times as a function of collector
current, IGBT
t = f(IC)
VCE = 400 V, Tvj = 175 °C, VGE = 0/15 V, RG = 10 Ω
6
1000
5
4
100
3
2
10
1
0
25
Datasheet
50
75
100
125
1
150
0
10
20
40
60
80
100
120
1.00
2021-06-29
IKW40N65ET7
Low Loss Duopack: IGBT 7
4 Characteristics diagrams
Typical switching times as a function of gate resistor,
IGBT
t = f(RG)
IC = 40.0 A, VCE = 400 V, Tvj = 175 °C, VGE = 0/15 V
10000
Typical switching times as a function of junction
temperature, IGBT
t = f(Tvj)
IC = 40.0 A, VCE = 400 V, VGE = 0/15 V, RG = 10 Ω
1000
1000
100
100
10
10
1
1
0
20
40
60
80
100
25
120
Typical switching energy losses as a function of
collector current, IGBT
E = f(IC)
VCE = 400 V, Tvj = 175 °C, VGE = 0/15 V, RG = 10 Ω
50
75
100
125
150
175
Typical switching energy losses as a function of gate
resistor, IGBT
E = f(RG)
IC = 40.0 A, VCE = 400 V, Tvj = 175 °C, VGE = 0/15 V
14
12
12
10
10
8
8
6
6
4
4
2
2
0
0
0
Datasheet
20
40
60
80
100
120
0
11
20
40
60
80
100
120
1.00
2021-06-29
IKW40N65ET7
Low Loss Duopack: IGBT 7
4 Characteristics diagrams
Typical switching energy losses as a function of
junction temperature, IGBT
E = f(Tvj)
IC = 40.0 A, VCE = 400 V, VGE = 0/15 V, RG = 10 Ω
Typical switching energy losses as a function of
collector emitter voltage, IGBT
E = f(VCE)
IC = 40.0 A, Tvj = 175 °C, VGE = 0/15 V, RG = 10 Ω
3.0
4.0
3.5
2.5
3.0
2.0
2.5
1.5
2.0
1.5
1.0
1.0
0.5
0.5
0.0
25
50
75
100
125
150
0.0
200
175
Typical gate charge, IGBT
VGE = f(QGE)
IC = 40.0 A
250
300
350
400
450
500
Typical capacitance as a function of collector-emitter
voltage, IGBT
C = f(VCE)
f = 1000 kHz, VGE = 0 V
16
10000
14
12
1000
10
8
6
100
4
2
0
10
0
Datasheet
30
60
90
120
150
180
210
240
0
12
5
10
15
20
25
30
1.00
2021-06-29
IKW40N65ET7
Low Loss Duopack: IGBT 7
4 Characteristics diagrams
Typical short circuit safe operating range as a function Typical short circuit collector current as a function of
of collector-emitter voltage, IGBT
gate-emitter voltage, IGBT
tSC = f(VCE)
IC(SC) = f(VGE)
VCE = 400 V, Tvj = 150 °C
7.0
350
6.5
300
6.0
250
5.5
200
5.0
150
4.5
100
4.0
50
3.5
0
3.0
300 310 320 330 340 350 360 370 380 390 400
10
IGBT transient thermal resistance, IGBT
Zth = f(tp)
D = tp/T
1
0.1
0.1
0.01
0.01
Datasheet
1E-5
0.0001
0.001
0.01
14
16
18
20
Diode transient thermal impedance as a function of
pulse width, Diode
Zth = f(tp)
D = tp/T
1
0.001
1E-6
12
0.1
0.001
1E-6
1
13
1E-5
0.0001
0.001
0.01
0.1
1
1.00
2021-06-29
IKW40N65ET7
Low Loss Duopack: IGBT 7
4 Characteristics diagrams
Typical diode forward current as a function of forward Typical diode forward voltage as a function of
voltage, Diode
junction temperature, Diode
IF = f(VF)
VF = f(Tvj)
120
3.0
100
2.5
80
2.0
60
1.5
40
1.0
20
0.5
0.0
0
0.0
0.5
1.0
1.5
2.0
2.5
25
3.0
Typical reverse recovery time as a function of diode
current slope, Diode
trr = f(diF/dt)
VR = 400 V, IF = 40 A
3.5
300
3.0
250
2.5
200
2.0
150
1.5
100
1.0
50
0.5
500
Datasheet
1000
1500
2000
2500
0.0
500
3000
14
75
100
125
150
175
Typical reverse recovery charge as a function of diode
current slope, Diode
Qrr = f(diF/dt)
VR = 400 V, IF = 40 A
350
0
50
1000
1500
2000
2500
3000
1.00
2021-06-29
IKW40N65ET7
Low Loss Duopack: IGBT 7
4 Characteristics diagrams
Typical reverse recovery current as a function of diode
current slope, Diode
Irr = f(diF/dt)
VR = 400 V, IF = 40 A
Typical diode peak rate of fall of reverse recovery
current as a function of diode current slope, Diode
dIrr/dt = f(diF/dt)
VR = 400 V, IF = 40 A
45
0
40
-50
-100
35
-150
30
-200
25
-250
20
-300
15
-350
10
-400
5
-450
0
500
Datasheet
1000
1500
2000
2500
-500
500
3000
15
1000
1500
2000
2500
3000
1.00
2021-06-29
IKW40N65ET7
Low Loss Duopack: IGBT 7
5 Package outlines
5
Package outlines
Package Drawing PG-TO247-3
DIMENSIONS
A
A1
A2
b
b1
b2
c
D
D1
D2
E
E1
E2
E3
e
L
L1
P
Q
S
MILLIMETERS
MIN.
MAX.
4.70
5.30
2.20
2.60
1.50
2.50
1.00
1.40
1.60
2.41
2.57
3.43
0.89
0.38
21.50
20.70
17.65
13.08
1.35
0.51
16.30
15.50
14.15
12.38
5.10
3.40
2.60
1.00
5.44
20.40
19.80
4.50
3.85
3.70
3.50
6.25
5.35
6.30
6.04
DOCUMENT NO.
Z8B00003327
REVISION
06
SCALE 3:1
0 1 2 3 4 5mm
EUROPEAN PROJECTION
ISSUE DATE
25.07.2018
Figure 6
Datasheet
16
1.00
2021-06-29
IKW40N65ET7
Low Loss Duopack: IGBT 7
6 Testing conditions
6
Testing conditions
VGE(t)
I,V
90% VGE
t rr = t a + t b
Q rr = Q a + Q b
dIF/dt
a
10% VGE
b
t
Qa
IC(t)
Qb
dI
90% IC
90% IC
10% IC
10% IC
Figure C. Definition of diode switching
characteristics
t
VCE(t)
t
td(off)
tf
td(on)
t
tr
Figure A.
VGE(t)
90% VGE
Figure D.
10% VGE
t
IC(t)
CC
2% IC
t
Figure E. Dynamic test circuit
Parasitic inductance Ls,
parasitic capacitor Cs,
relief capacitor Cr,
(only for ZVT switching)
VCE(t)
t2
E
off
=
t4
VCE x IC x dt
E
t1
t1
t2
t3
on
=
VCE x IC x d t
2% VCE
t3
t4
t
Figure B.
Figure 7
Datasheet
17
1.00
2021-06-29
IKW40N65ET7
Low Loss Duopack: IGBT 7
Revision history
Revision history
Document revision
Date of release
Description of changes
V1.1
2020-04-28
Preliminary data sheet
V2.1
2020-05-12
Final data sheet
1.00
2021-06-29
Change of potential applications and new diagram added (tSC as
function of VCE)
Datasheet
18
1.00
2021-06-29
Trademarks
All referenced product or service names and trademarks are the property of their respective owners.
Edition 2021-06-29
Published by
Infineon Technologies AG
81726 Munich, Germany
© 2021 Infineon Technologies AG
All Rights Reserved.
Do you have a question about any
aspect of this document?
Email: erratum@infineon.com
Document reference
IFX-AAL383-003
IMPORTANT NOTICE
The information given in this document shall in no
event be regarded as a guarantee of conditions or
characteristics (“Beschaffenheitsgarantie”).
With respect to any examples, hints or any typical
values stated herein and/or any information regarding
the application of the product, Infineon Technologies
hereby disclaims any and all warranties and liabilities
of any kind, including without limitation warranties of
non-infringement of intellectual property rights of any
third party.
In addition, any information given in this document is
subject to customer’s compliance with its obligations
stated in this document and any applicable legal
requirements, norms and standards concerning
customer’s products and any use of the product of
Infineon Technologies in customer’s applications.
The data contained in this document is exclusively
intended for technically trained staff. It is the
responsibility of customer’s technical departments to
evaluate the suitability of the product for the intended
application and the completeness of the product
information given in this document with respect to such
application.
Please note that this product is not qualified
according to the AEC Q100 or AEC Q101 documents
of the Automotive Electronics Council.
WARNINGS
Due to technical requirements products may contain
dangerous substances. For information on the types
in question please contact your nearest Infineon
Technologies office.
Except as otherwise explicitly approved by Infineon
Technologies in a written document signed by
authorized representatives of Infineon Technologies,
Infineon Technologies’ products may not be used in
any applications where a failure of the product or
any consequences of the use thereof can reasonably
be expected to result in personal injury.