IKW40N65ET7XKSA1

IKW40N65ET7 Low Loss Duopack: IGBT 7 Low Loss Duopack: IGBT 7 with Trench and Fieldstop technology Features • • • • • • • • • • • • VCE = 650 V IC = 40 A Very Low VCEsat Low turn-off losses Short tail current Reduced EMI Humidity robust design Very soft, fast recovery antiparallel diode Maximum junction temperature Tvjmax = 175°C Qualified according to JEDEC for target applications Pb-free lead plating; RoHS compliant Complete product spectrum and PSpice Models: http://www.infineon.com/igbt7/ G C E Potential applications • • • • • • • Servo Drives General Purpose Drives (GPD) Industrial UPS Industrial SMPS Energy Generation Solar Optimizer Solar String Inverter Product validation • Product Validation: Qualified for industrial applications according to the relevant tests of JEDEC47/20/22 Description Package pin definition: • Pin C & backside - Collector • Pin E - Emitter • Pin G - Gate C G E Type Package Marking IKW40N65ET7 PG-TO247-3 K40EET7 Datasheet www.infineon.com Please read the Important Notice and Warnings at the end of this document 1.00 2021-06-29 IKW40N65ET7 Low Loss Duopack: IGBT 7 Table of contents Table of contents Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .1 Potential applications . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Product validation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Table of contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 1 Package . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2 IGBT . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .3 3 Diode . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .6 4 Characteristics diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 5 Package outlines . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .16 6 Testing conditions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 18 Disclaimer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 19 Datasheet 2 1.00 2021-06-29 IKW40N65ET7 Low Loss Duopack: IGBT 7 1 Package 1 Package Table 1 Characteristic values Parameter Symbol Note or test condition Values Min. Internal emitter inductance measured 5 mm (0.197 in) from case LE Storage temperature Tstg Thermal resistance, junction-ambient 2 13.0 -55 nH °C 260 °C M 0.6 Nm Rth(j-a) 40 K/W wave soldering 1.6 mm (0.063 in.) from case for 10 s IGBT Table 2 Maximum rated values Parameter Collector-emitter voltage Symbol Note or test condition VCE DC collector current, limited by Tvjmax IC Pulsed collector current, tp limited by Tvjmax 1) ICpuls Turn-off safe operating area2) Values Unit 650 V TC = 25 °C 76 A TC = 100 °C 49.5 Tvj ≥ 25 °C VCE ≤ 650 V, tP = 1 µs, Tvj ≤ 175 °C Gate-emitter voltage VGE Transient gate-emitter voltage VGE tp ≤ 10 µs, D < 0.010 Short circuit withstand time tSC VGE = 15 V, Allowed VCC ≤ 330 V, number of short circuits Tvj = 100 °C < 1000, Time between VCC ≤ 400 V, short circuits ≥ 1.0 s Tvj = 150 °C Power dissipation 1) 2) Max. 150 Soldering temperature Mounting torque, M3 screw Maximum of mounting processes: 3 Typ. Unit Ptot 120 A 120 A ±20 V ±30 V 5 µs 3 TC = 25 °C 230.8 TC = 100 °C 115.4 W Defined by design. Not subject to production test. Clamped inductive load current test for each device, IC=120A, VCC=400V, Tc=25°C, VGE=20V, L=80µH, RG=10Ω Datasheet 3 1.00 2021-06-29 IKW40N65ET7 Low Loss Duopack: IGBT 7 2 IGBT Table 3 Characteristic values Parameter Symbol Note or test condition Values Min. Collector-emitter saturation voltage VCE sat IC = 40.0 A, VGE = 15 V Unit Typ. Max. Tvj = 25 °C 1.35 1.65 V Tvj = 125 °C 1.50 Tvj = 175 °C 1.60 5.70 V 40 µA 100 nA Gate-emitter threshold voltage VGEth IC = 0.40 mA, VCE = VGE Zero gate voltage collector current ICES VCE = 650 V, VGE = 0 V Gate-emitter leakage current IGES VCE = 0 V, VGE = 20 V Transconductance gfs IC = 40.0 A, VCE = 20 V 21 S Short circuit collector current ISC VGE = 15 V, tSC ≤ 3 µs, Allowed number of short circuits < 1000 , Time between short circuits ≥ 1.0 s 205 A Input capacitance Cies VCE = 25 V, VGE = 0 V, f = 1000 kHz 2475 pF Output capacitance Coes VCE = 25 V, VGE = 0 V, f = 1000 kHz 77 pF Reverse transfer capacitance Cres VCE = 25 V, VGE = 0 V, f = 1000 kHz 25 pF Gate charge QG IC = 40.0 A, VGE = 15 V, VCE = 520 V 235 nC Turn-on delay time tdon VCE = 400 V, VGE = 15 V, RGon = 10.0 Ω, RGoff = 10.0 Ω, Lσ = 32 nH, Cσ = 30 pF Tvj = 25 °C, IC = 40.0 A 20 ns Tvj = 25 °C, IC = 20.0 A 19 Tvj = 175 °C, IC = 40.0 A 23 Tvj = 175 °C, IC = 20.0 A 21 Tvj = 25 °C, IC = 40.0 A 15 Tvj = 25 °C, IC = 20.0 A 9 Tvj = 175 °C, IC = 40.0 A 20 Tvj = 175 °C, IC = 20.0 A 12 Rise time (inductive load) Datasheet 4.30 Tvj = 25 °C Tvj = 175 °C tr VCE = 400 V, VGE = 15 V, RGon = 10.0 Ω, RGoff = 10.0 Ω, Lσ = 32 nH, Cσ = 30 pF 4 5.00 900 ns 1.00 2021-06-29 IKW40N65ET7 Low Loss Duopack: IGBT 7 2 IGBT Table 3 Characteristic values (continued) Parameter Symbol Note or test condition Values Min. Turn-off delay time Fall time (inductive load) Turn-on energy Turn-off energy Datasheet tdoff tf Eon Eoff VCE = 400 V, VGE = 15 V, RGon = 10.0 Ω, RGoff = 10.0 Ω, Lσ = 32 nH, Cσ = 30 pF VCE = 400 V, VGE = 15 V, RGon = 10.0 Ω, RGoff = 10.0 Ω, Lσ = 32 nH, Cσ = 30 pF VCE = 400 V, VGE = 15 V, RGon = 10.0 Ω, RGoff = 10.0 Ω, Lσ = 32 nH, Cσ = 30 pF VCE = 400 V, VGE = 15 V, RGon = 10.0 Ω, RGoff = 10.0 Ω, Lσ = 32 nH, Cσ = 30 pF 5 Typ. Tvj = 25 °C, IC = 40.0 A 310 Tvj = 25 °C, IC = 20.0 A 330 Tvj = 175 °C, IC = 40.0 A 380 Tvj = 175 °C, IC = 20.0 A 430 Tvj = 25 °C, IC = 40.0 A 13 Tvj = 25 °C, IC = 20.0 A 17 Tvj = 175 °C, IC = 40.0 A 57 Tvj = 175 °C, IC = 20.0 A 70 Tvj = 25 °C, IC = 40.0 A 1.05 Tvj = 25 °C, IC = 20.0 A 0.45 Tvj = 175 °C, IC = 40.0 A 1.65 Tvj = 175 °C, IC = 20.0 A 0.84 Tvj = 25 °C, IC = 40.0 A 0.59 Tvj = 25 °C, IC = 20.0 A 0.26 Tvj = 175 °C, IC = 40.0 A 1.13 Tvj = 175 °C, IC = 20.0 A 0.59 Unit Max. ns ns mJ mJ 1.00 2021-06-29 IKW40N65ET7 Low Loss Duopack: IGBT 7 3 Diode Table 3 Characteristic values (continued) Parameter Symbol Note or test condition Values Min. Total switching energy IGBT thermal resistance, junction-case Operating junction temperature Note: 3 Table 4 Ets Tvj = 25 °C, IC = 40.0 A 1.64 Tvj = 25 °C, IC = 20.0 A 0.71 Tvj = 175 °C, IC = 40.0 A 2.78 Tvj = 175 °C, IC = 20.0 A 1.43 Rthjc Tvj -40 mJ 0.65 K/W 175 °C Diode Maximum rated values Symbol Note or test condition Repetitive peak reverse voltage VRRM Diode forward current, limited by Tvjmax IF Diode pulsed current, limited by Tvjmax IFpuls Values Unit 650 V TC = 25 °C 72 A TC = 100 °C 43.5 Tvj ≥ 25 °C limited by bondwire 120 A Values Unit Characteristic values Parameter Symbol Note or test condition Min. Diode forward voltage Reverse leakage current VF IR IF = 40.0 A VR = 650 V Typ. Max. Tvj = 25 °C 1.65 2.00 V Tvj = 125 °C 1.60 Tvj = 175 °C 1.55 40 µA Tvj = 25 °C Tvj = 175 °C Datasheet Max. Electrical Characteristic, at Tvj=25°C, unless otherwise specified. Parameter Table 5 VCE = 400 V, VGE = 15 V, RGon = 10.0 Ω, RGoff = 10.0 Ω, Lσ = 32 nH, Cσ = 30 pF Typ. Unit 6 900 1.00 2021-06-29 IKW40N65ET7 Low Loss Duopack: IGBT 7 3 Diode Table 5 Characteristic values (continued) Parameter Symbol Note or test condition Values Min. Diode reverse recovery time Diode reverse recovery charge Diode peak reverse recovery current Datasheet trr Qrr Irrm VR = 650 V VR = 650 V VR = 650 V 7 Typ. Tvj = 25 °C, IF = 40.0 A, -diF/dt = 1779 A/µs 85 Tvj = 25 °C, IF = 20.0 A, -diF/dt = 2381 A/µs 59 Tvj = 175 °C, IF = 40.0 A, -diF/dt = 1660 A/µs 145 Tvj = 175 °C, IF = 20.0 A, -diF/dt = 1881 A/µs 105 Tvj = 25 °C, IF = 40.0 A, -diF/dt = 1779 A/µs 0.95 Tvj = 25 °C, IF = 20.0 A, -diF/dt = 2381 A/µs 0.70 Tvj = 175 °C, IF = 40.0 A, -diF/dt = 1660 A/µs 2.80 Tvj = 175 °C, IF = 20.0 A, -diF/dt = 1881 A/µs 2.02 Tvj = 25 °C, IF = 40.0 A, -diF/dt = 1779 A/µs 22.0 Tvj = 25 °C, IF = 20.0 A, -diF/dt = 2381 A/µs 24.5 Tvj = 175 °C, IF = 40.0 A, -diF/dt = 1660 A/µs 35.0 Tvj = 175 °C, IF = 20.0 A, -diF/dt = 1881 A/µs 35.0 Unit Max. ns µC A 1.00 2021-06-29 IKW40N65ET7 Low Loss Duopack: IGBT 7 3 Diode Table 5 Characteristic values (continued) Parameter Symbol Note or test condition Values Min. Diode peak rate off fall of reverse recovery current Diode thermal resistance, junction-case Operating junction temperature Note: Datasheet dIrr/dt VR = 650 V Tvj = 25 °C, IF = 40.0 A, -diF/dt = 1779 A/µs -380 Tvj = 25 °C, IF = 20.0 A, -diF/dt = 2381 A/µs -520 Tvj = 175 °C, IF = 40.0 A, -diF/dt = 1660 A/µs -290 Tvj = 175 °C, IF = 20.0 A, -diF/dt = 1881 A/µs -425 Rthjc Tvj Typ. -40 Unit Max. A/µs 0.90 K/W 175 °C For optimum lifetime and reliability, Infineon recommends operating conditions that do not exceed 80% of the maximum ratings stated in this datasheet. 8 1.00 2021-06-29 IKW40N65ET7 Low Loss Duopack: IGBT 7 4 Characteristics diagrams 4 Characteristics diagrams Power dissipation as a function of case temperature, IGBT Ptot = f(Tc) Tvj ≤ 175 °C 240 Collector current as a function of case temperature, IGBT IC = f(Tc) Tvj ≤ 175 °C, VGE ≥ 15 V 80 70 200 60 160 50 120 40 30 80 20 40 10 0 0 25 50 75 100 125 150 175 25 Typical output characteristic, IGBT IC = f(VCE) Tvj = 25 °C 75 100 125 150 175 Typical output characteristic, IGBT IC = f(VCE) Tvj = 175 °C 120 120 100 100 80 80 60 60 40 40 20 20 0 0 0 Datasheet 50 1 2 3 4 5 0 9 1 2 3 4 5 1.00 2021-06-29 IKW40N65ET7 Low Loss Duopack: IGBT 7 4 Characteristics diagrams Typical transfer characteristic, IGBT IC = f(VGE) VCE = 20 V Typical collector-emitter saturation voltage as a function of junction temperature, IGBT VCEsat = f(Tvj) VGE = 15 V 120 3.0 100 2.5 80 2.0 60 1.5 40 1.0 20 0.5 0.0 0 2 4 6 8 10 12 25 14 Gate-emitter threshold voltage as a function of junction temperature, IGBT VGEth = f(Tvj) IC = 0.40 mA 50 75 100 125 150 175 Typical switching times as a function of collector current, IGBT t = f(IC) VCE = 400 V, Tvj = 175 °C, VGE = 0/15 V, RG = 10 Ω 6 1000 5 4 100 3 2 10 1 0 25 Datasheet 50 75 100 125 1 150 0 10 20 40 60 80 100 120 1.00 2021-06-29 IKW40N65ET7 Low Loss Duopack: IGBT 7 4 Characteristics diagrams Typical switching times as a function of gate resistor, IGBT t = f(RG) IC = 40.0 A, VCE = 400 V, Tvj = 175 °C, VGE = 0/15 V 10000 Typical switching times as a function of junction temperature, IGBT t = f(Tvj) IC = 40.0 A, VCE = 400 V, VGE = 0/15 V, RG = 10 Ω 1000 1000 100 100 10 10 1 1 0 20 40 60 80 100 25 120 Typical switching energy losses as a function of collector current, IGBT E = f(IC) VCE = 400 V, Tvj = 175 °C, VGE = 0/15 V, RG = 10 Ω 50 75 100 125 150 175 Typical switching energy losses as a function of gate resistor, IGBT E = f(RG) IC = 40.0 A, VCE = 400 V, Tvj = 175 °C, VGE = 0/15 V 14 12 12 10 10 8 8 6 6 4 4 2 2 0 0 0 Datasheet 20 40 60 80 100 120 0 11 20 40 60 80 100 120 1.00 2021-06-29 IKW40N65ET7 Low Loss Duopack: IGBT 7 4 Characteristics diagrams Typical switching energy losses as a function of junction temperature, IGBT E = f(Tvj) IC = 40.0 A, VCE = 400 V, VGE = 0/15 V, RG = 10 Ω Typical switching energy losses as a function of collector emitter voltage, IGBT E = f(VCE) IC = 40.0 A, Tvj = 175 °C, VGE = 0/15 V, RG = 10 Ω 3.0 4.0 3.5 2.5 3.0 2.0 2.5 1.5 2.0 1.5 1.0 1.0 0.5 0.5 0.0 25 50 75 100 125 150 0.0 200 175 Typical gate charge, IGBT VGE = f(QGE) IC = 40.0 A 250 300 350 400 450 500 Typical capacitance as a function of collector-emitter voltage, IGBT C = f(VCE) f = 1000 kHz, VGE = 0 V 16 10000 14 12 1000 10 8 6 100 4 2 0 10 0 Datasheet 30 60 90 120 150 180 210 240 0 12 5 10 15 20 25 30 1.00 2021-06-29 IKW40N65ET7 Low Loss Duopack: IGBT 7 4 Characteristics diagrams Typical short circuit safe operating range as a function Typical short circuit collector current as a function of of collector-emitter voltage, IGBT gate-emitter voltage, IGBT tSC = f(VCE) IC(SC) = f(VGE) VCE = 400 V, Tvj = 150 °C 7.0 350 6.5 300 6.0 250 5.5 200 5.0 150 4.5 100 4.0 50 3.5 0 3.0 300 310 320 330 340 350 360 370 380 390 400 10 IGBT transient thermal resistance, IGBT Zth = f(tp) D = tp/T 1 0.1 0.1 0.01 0.01 Datasheet 1E-5 0.0001 0.001 0.01 14 16 18 20 Diode transient thermal impedance as a function of pulse width, Diode Zth = f(tp) D = tp/T 1 0.001 1E-6 12 0.1 0.001 1E-6 1 13 1E-5 0.0001 0.001 0.01 0.1 1 1.00 2021-06-29 IKW40N65ET7 Low Loss Duopack: IGBT 7 4 Characteristics diagrams Typical diode forward current as a function of forward Typical diode forward voltage as a function of voltage, Diode junction temperature, Diode IF = f(VF) VF = f(Tvj) 120 3.0 100 2.5 80 2.0 60 1.5 40 1.0 20 0.5 0.0 0 0.0 0.5 1.0 1.5 2.0 2.5 25 3.0 Typical reverse recovery time as a function of diode current slope, Diode trr = f(diF/dt) VR = 400 V, IF = 40 A 3.5 300 3.0 250 2.5 200 2.0 150 1.5 100 1.0 50 0.5 500 Datasheet 1000 1500 2000 2500 0.0 500 3000 14 75 100 125 150 175 Typical reverse recovery charge as a function of diode current slope, Diode Qrr = f(diF/dt) VR = 400 V, IF = 40 A 350 0 50 1000 1500 2000 2500 3000 1.00 2021-06-29 IKW40N65ET7 Low Loss Duopack: IGBT 7 4 Characteristics diagrams Typical reverse recovery current as a function of diode current slope, Diode Irr = f(diF/dt) VR = 400 V, IF = 40 A Typical diode peak rate of fall of reverse recovery current as a function of diode current slope, Diode dIrr/dt = f(diF/dt) VR = 400 V, IF = 40 A 45 0 40 -50 -100 35 -150 30 -200 25 -250 20 -300 15 -350 10 -400 5 -450 0 500 Datasheet 1000 1500 2000 2500 -500 500 3000 15 1000 1500 2000 2500 3000 1.00 2021-06-29 IKW40N65ET7 Low Loss Duopack: IGBT 7 5 Package outlines 5 Package outlines Package Drawing PG-TO247-3 DIMENSIONS A A1 A2 b b1 b2 c D D1 D2 E E1 E2 E3 e L L1 P Q S MILLIMETERS MIN. MAX. 4.70 5.30 2.20 2.60 1.50 2.50 1.00 1.40 1.60 2.41 2.57 3.43 0.89 0.38 21.50 20.70 17.65 13.08 1.35 0.51 16.30 15.50 14.15 12.38 5.10 3.40 2.60 1.00 5.44 20.40 19.80 4.50 3.85 3.70 3.50 6.25 5.35 6.30 6.04 DOCUMENT NO. Z8B00003327 REVISION 06 SCALE 3:1 0 1 2 3 4 5mm EUROPEAN PROJECTION ISSUE DATE 25.07.2018 Figure 6 Datasheet 16 1.00 2021-06-29 IKW40N65ET7 Low Loss Duopack: IGBT 7 6 Testing conditions 6 Testing conditions VGE(t) I,V 90% VGE t rr = t a + t b Q rr = Q a + Q b dIF/dt a 10% VGE b t Qa IC(t) Qb dI 90% IC 90% IC 10% IC 10% IC Figure C. Definition of diode switching characteristics t VCE(t) t td(off) tf td(on) t tr Figure A. VGE(t) 90% VGE Figure D. 10% VGE t IC(t) CC 2% IC t Figure E. Dynamic test circuit Parasitic inductance Ls, parasitic capacitor Cs, relief capacitor Cr, (only for ZVT switching) VCE(t) t2 E off = t4 VCE x IC x dt E t1 t1 t2 t3 on = VCE x IC x d t 2% VCE t3 t4 t Figure B. Figure 7 Datasheet 17 1.00 2021-06-29 IKW40N65ET7 Low Loss Duopack: IGBT 7 Revision history Revision history Document revision Date of release Description of changes V1.1 2020-04-28 Preliminary data sheet V2.1 2020-05-12 Final data sheet 1.00 2021-06-29 Change of potential applications and new diagram added (tSC as function of VCE) Datasheet 18 1.00 2021-06-29 Trademarks All referenced product or service names and trademarks are the property of their respective owners. Edition 2021-06-29 Published by Infineon Technologies AG 81726 Munich, Germany © 2021 Infineon Technologies AG All Rights Reserved. Do you have a question about any aspect of this document? Email: erratum@infineon.com Document reference IFX-AAL383-003 IMPORTANT NOTICE The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics (“Beschaffenheitsgarantie”). With respect to any examples, hints or any typical values stated herein and/or any information regarding the application of the product, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation warranties of non-infringement of intellectual property rights of any third party. In addition, any information given in this document is subject to customer’s compliance with its obligations stated in this document and any applicable legal requirements, norms and standards concerning customer’s products and any use of the product of Infineon Technologies in customer’s applications. The data contained in this document is exclusively intended for technically trained staff. It is the responsibility of customer’s technical departments to evaluate the suitability of the product for the intended application and the completeness of the product information given in this document with respect to such application. Please note that this product is not qualified according to the AEC Q100 or AEC Q101 documents of the Automotive Electronics Council. WARNINGS Due to technical requirements products may contain dangerous substances. For information on the types in question please contact your nearest Infineon Technologies office. Except as otherwise explicitly approved by Infineon Technologies in a written document signed by authorized representatives of Infineon Technologies, Infineon Technologies’ products may not be used in any applications where a failure of the product or any consequences of the use thereof can reasonably be expected to result in personal injury.