IKW40N65WR5XKSA1

IKW40N65WR5 Reverse-Conducting IGBT Reverse-Conducting IGBT with monolithic body diode TO-247 – 3Pin Features • • • • • • • • • • • VCE = 650 V IC = 40 A Powerful monolithic diode optimized for ZCS applications High ruggedness, temperature stable behavior Very low VCEsat and low Eoff Easy paralleling capability due to positive temperature coefficient in VCEsat Low EMI Low electrical parameters depending (dependence) on temperature Qualified according to JESD-022 for target applications Pb-free lead plating; RoHS compliant Complete product spectrum and PSpice Models: http://www.infineon.com/igbt/ 2021-10-27 restricted Copyright © Infineon T Potential applications • Welding • PFC • ZCS - converters Description C G E Type Package Marking IKW40N65WR5 PG-TO247-3 K40EWR5 Datasheet www.infineon.com Please read the sections "Important notice" and "Warnings" at the end of this document Revision 1.20 2022-05-13 IKW40N65WR5 Reverse-Conducting IGBT Table of contents Table of contents Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .1 Potential applications . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Table of contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 1 Package . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2 IGBT . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .3 3 Diode . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .5 4 Characteristics diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7 5 Package outlines . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .13 6 Testing conditions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15 Disclaimer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16 Datasheet 2 Revision 1.20 2022-05-13 IKW40N65WR5 Reverse-Conducting IGBT 1 Package 1 Package Table 1 Characteristic values Parameter Symbol Note or test condition Values Min. Internal emitter inductance measured 5 mm (0.197 in.) from case LE Storage temperature Tstg Soldering temperature Mounting torque M Thermal resistance, junction-ambient 2 Max. 13.0 -55 nH 150 °C wave soldering 1.6 mm (0.063 in.) from case for 10 s 260 °C M3 screw Maximum of mounting process: 3 0.6 Nm 40 K/W Rth(j-a) IGBT Table 2 Maximum rated values Parameter Symbol Note or test condition Collector-emitter voltage DC collector current, limited by Tvjmax Pulsed collector current, tp limited by Tvjmax VCE IC Unit 650 V Tc = 25 °C 80 A Tc = 130 °C 40 Tvj ≥ 25 °C limited by bondwire 120 A 120 A ±20 V ±30 V Tc = 25 °C 230 W Tc = 130 °C 115 VCE ≤ 650 V, Tvj ≤ 175 °C Gate-emitter voltage VGE Transient gate-emitter voltage VGE Power dissipation Ptot Table 3 Values ICpulse Turn-off safe operating area tp ≤ 10 µs, D < 0.01 Characteristic values Parameter Symbol Note or test condition Values Min. Collector-emitter breakdown voltage VBRCES IC = 0.2 mA, VGE = 0 V Collector-emitter saturation voltage VCEsat IC = 40 A, VGE = 15 V Gate-emitter threshold voltage VGEth (table continues...) Datasheet Typ. Unit IC = 0.4 mA, VCE = VGE 3 Typ. Unit Max. 650 V Tvj = 25 °C 1.4 Tvj = 175 °C 1.65 3.2 4 1.8 V 4.8 V Revision 1.20 2022-05-13 IKW40N65WR5 Reverse-Conducting IGBT 2 IGBT Table 3 (continued) Characteristic values Parameter Symbol Note or test condition Values Min. Zero gate-voltage collector current ICES VCE = 650 V, VGE = 0 V Gate-emitter leakage current IGES VCE = 0 V, VGE = 20 V Transconductance gfs IC = 40 A, VCE = 20 V Input capacitance Cies Output capacitance Typ. Tvj = 25 °C Unit Max. 40 µA 100 nA 55 S VCE = 25 V, VGE = 0 V, f = 1000 kHz 4755 pF Coes VCE = 25 V, VGE = 0 V, f = 1000 kHz 45 pF Reverse transfer capacitance Cres VCE = 25 V, VGE = 0 V, f = 1000 kHz 20 pF Gate charge QG IC = 40 A, VGE = 15 V, VCC = 520 V 193 nC VCC = 400 V, VGE = 0/15 V, Tvj = 25 °C, RGon = 20 Ω, RGoff = 20 Ω, IC = 20 A Lσ = 70 nH, Cσ = 30 pF Tvj = 175 °C, IC = 20 A 42 ns VCC = 400 V, VGE = 0/15 V, Tvj = 25 °C, RGon = 20 Ω, RGoff = 20 Ω, IC = 20 A Lσ = 70 nH, Cσ = 30 pF Tvj = 175 °C, IC = 20 A 18 VCC = 400 V, VGE = 0/15 V, Tvj = 25 °C, RGon = 20 Ω, RGoff = 20 Ω, IC = 20 A Lσ = 70 nH, Cσ = 30 pF Tvj = 175 °C, IC = 20 A 432 VCC = 400 V, VGE = 0/15 V, Tvj = 25 °C, RGon = 20 Ω, RGoff = 20 Ω, IC = 20 A Lσ = 70 nH, Cσ = 30 pF Tvj = 175 °C, IC = 20 A 16 VCC = 400 V, VGE = 0/15 V, Tvj = 25 °C, RGon = 20 Ω, RGoff = 20 Ω, IC = 20 A Lσ = 70 nH, Cσ = 30 pF Tvj = 175 °C, IC = 20 A 0.77 VCC = 400 V, VGE = 0/15 V, Tvj = 25 °C, RGon = 20 Ω, RGoff = 20 Ω, IC = 20 A Lσ = 70 nH, Cσ = 30 pF Tvj = 175 °C, IC = 20 A 0.16 VCC = 400 V, VGE = 0/15 V, Tvj = 25 °C, RGon = 20 Ω, RGoff = 20 Ω, IC = 20 A Lσ = 70 nH, Cσ = 30 pF Tvj = 175 °C, IC = 20 A 0.93 Turn-on delay time Rise time (inductive load) Turn-off delay time Fall time (inductive load) Turn-on energy Turn-off energy Total switching energy td(on) tr td(off) tf Eon Eoff Ets 42 ns 21 ns 500 ns 10 mJ 0.82 mJ 0.24 mJ 1.06 (table continues...) Datasheet 4 Revision 1.20 2022-05-13 IKW40N65WR5 Reverse-Conducting IGBT 3 Diode Table 3 (continued) Characteristic values Parameter Symbol Note or test condition Values Min. IGBT thermal resistance, junction to case Operating junction temperature Note: 3 Table 4 Rth(j-c) Tvj -40 Max. 0.65 K/W 175 °C Electrical Characteristic, at Tvj = 25°C, unless otherwise specified. Diode Maximum rated values Parameter Symbol Note or test condition Repetitive peak reverse voltage VRRM Diode forward current, limited by Tvjmax IF Diode pulsed current, tp limited by Tvjmax IFpulse Table 5 Typ. Unit Values Unit 650 V Tc = 25 °C 32 A Tc = 100 °C 19 Tvj ≥ 25 °C limited by bondwire 120 A Values Unit Characteristic values Parameter Symbol Note or test condition Min. Diode forward voltage Diode reverse recovery time Diode reverse recovery charge VF trr Qrr IF = 20 A VR = 400 V VR = 400 V Typ. Max. Tvj = 25 °C 1.4 1.9 Tvj = 175 °C 1.5 Tvj = 25 °C, IF = 20 A, -diF/dt = 900 A/µs 112 Tvj = 175 °C, IF = 20 A, -diF/dt = 900 A/µs 153 Tvj = 25 °C, IF = 20 A, -diF/dt = 900 A/µs 1.65 Tvj = 175 °C, IF = 20 A, -diF/dt = 900 A/µs 2.8 V ns µC (table continues...) Datasheet 5 Revision 1.20 2022-05-13 IKW40N65WR5 Reverse-Conducting IGBT 3 Diode Table 5 (continued) Characteristic values Parameter Symbol Note or test condition Values Min. Diode peak reverse recovery current Diode peak rate of fall of reverse recovery current Diode thermal resistance, junction to case Operating junction temperature Note: Datasheet Irrm dirr/dt VR = 400 V VR = 400 V Tvj = 25 °C, IF = 20 A, -diF/dt = 900 A/µs 27 Tvj = 175 °C, IF = 20 A, -diF/dt = 900 A/µs 32 Tvj = 25 °C, IF = 20 A, -diF/dt = 900 A/µs 585 Tvj = 175 °C, IF = 20 A, -diF/dt = 900 A/µs 1030 Rth(j-c) Tvj Typ. -40 Unit Max. A A/µs 2.85 K/W 175 °C For optimum lifetime and reliability, Infineon recommends operating conditions that do not exceed 80% of the maximum ratings stated in this datasheet. 6 Revision 1.20 2022-05-13 IKW40N65WR5 Reverse-Conducting IGBT 4 Characteristics diagrams 4 Characteristics diagrams Reverse bias safe operating area IC = f(VCE) Tvj ≤ 175 °C, VGE = 15 V, Tc = 25 °C Power dissipation as a function of case temperature Ptot = f(Tc) Tvj ≤ 175 °C 250 100 200 10 150 100 1 50 0 0.1 1 10 100 1000 25 Collector current as a function of case temperature IC = f(Tc) Tvj ≤ 175 °C, VGE ≥ 15 V 50 75 100 125 150 175 2.0 2.5 3.0 Typical output characteristic IC = f(VCE) Tvj = 25 °C 90 120 80 100 70 60 80 50 60 40 30 40 20 20 10 0 0 25 Datasheet 50 75 100 125 150 175 0.0 7 0.5 1.0 1.5 Revision 1.20 2022-05-13 IKW40N65WR5 Reverse-Conducting IGBT 4 Characteristics diagrams Typical output characteristic IC = f(VCE) Tvj = 175 °C Typical transfer characteristic IC = f(VGE) VCE = 20 V 120 120 100 100 80 80 60 60 40 40 20 20 0 0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 2 Typical collector-emitter saturation voltage as a function of junction temperature VCEsat = f(Tvj) VGE = 15 V 3 4 5 6 7 8 Typical switching times as a function of collector current t = f(IC) VCC = 400 V, Tvj = 175 °C, VGE = 0/15 V, RG = 20 Ω 1000 2.00 1.75 1.50 100 1.25 1.00 0.75 10 0.50 0.25 0.00 0 Datasheet 25 50 75 100 125 150 1 175 0 8 10 20 30 40 50 60 70 80 Revision 1.20 2022-05-13 IKW40N65WR5 Reverse-Conducting IGBT 4 Characteristics diagrams Typical switching times as a function of gate resistor t = f(RG) IC = 40 A, VCC = 400 V, Tvj = 175 °C, VGE = 0/15 V Typical switching times as a function of junction temperature t = f(Tvj) IC = 40 A, VCC = 400 V, VGE = 0/15 V, RG = 20 Ω 1000 1000 100 100 10 10 1 1 10 19 28 36 45 54 62 71 25 80 Gate-emitter threshold voltage as a function of junction temperature VGEth = f(Tvj) IC = 0.4 mA 5.0 5.5 4.5 5.0 4.0 4.5 3.5 4.0 3.0 3.5 2.5 3.0 2.0 2.5 1.5 2.0 1.0 1.5 0.5 1.0 Datasheet 25 50 75 100 125 75 100 125 150 175 Typical switching energy losses as a function of collector current E = f(IC) VCC = 400 V, Tvj = 175 °C, VGE = 0/15 V, RG = 20 Ω 6.0 0 50 0.0 150 0 9 10 20 30 40 50 60 70 80 Revision 1.20 2022-05-13 IKW40N65WR5 Reverse-Conducting IGBT 4 Characteristics diagrams Typical switching energy losses as a function of gate resistor E = f(RG) IC = 40 A, VCC = 400 V, Tvj = 175 °C, VGE = 0/15 V Typical switching energy losses as a function of junction temperature E = f(Tvj) IC = 40 A, VCC = 400 V, VGE = 0/15 V, RG = 20 Ω 3.0 4.0 3.5 2.5 3.0 2.0 2.5 1.5 2.0 1.5 1.0 1.0 0.5 0.5 0.0 0.0 0 10 20 30 40 50 60 70 80 25 90 Typical gate charge VGE = f(QG) IC = 40 A 50 75 100 125 150 175 Typical capacitance as a function of collector-emitter voltage C = f(VCE) f = 1000 kHz, VGE = 0 V 10000 16 14 12 1000 10 8 6 100 4 2 0 10 0 Datasheet 20 40 60 80 100 120 140 160 180 200 0 10 10 20 30 40 50 60 70 80 90 100 Revision 1.20 2022-05-13 IKW40N65WR5 Reverse-Conducting IGBT 4 Characteristics diagrams IGBT transient thermal impedance as a function of pulse width Zth(j-c) = f(tp) D = tp/T Diode transient thermal impedance as a function of pulse width Zth(j-c) = f(tp) D = tp/T 1 1 0.1 0.1 0.01 0.01 0.001 1E-6 1E-5 0.0001 0.001 0.01 0.001 1E-7 0.1 Typical reverse recovery time as a function of diode current slope trr = f(diF/dt) VR = 400 V, IF = 20 A 5.0 225 4.5 200 4.0 175 3.5 150 3.0 125 2.5 100 2.0 75 1.5 50 1.0 25 0.5 500 Datasheet 600 700 800 900 1000 0.0 500 1100 11 1E-5 0.0001 0.001 0.01 0.1 Typical reverse recovery charge as a function of diode current slope Qrr = f(diF/dt) VR = 400 V, IF = 20 A 250 0 1E-6 600 700 800 900 1000 1100 Revision 1.20 2022-05-13 IKW40N65WR5 Reverse-Conducting IGBT 4 Characteristics diagrams Typical reverse recovery current as a function of diode current slope Irr = f(diF/dt) VR = 400 V, IF = 20 A 60 Typical diode peak rate of fall of reverse recovery current as a function of diode current slope dirr/dt = f(diF/dt) VR = 400 V, IF = 20 A 0 -250 50 -500 -750 40 -1000 30 -1250 -1500 20 -1750 -2000 10 -2250 0 500 600 700 800 900 1000 -2500 500 1100 600 700 800 900 1000 1100 Typical diode forward current as a function of forward Typical diode forward voltage as a function of voltage junction temperature IF = f(VF) VF = f(Tvj) 120 3.00 110 2.75 100 2.50 90 2.25 80 2.00 70 60 1.75 50 1.50 40 1.25 30 1.00 20 0.75 10 0.50 0 0.0 Datasheet 0.5 1.0 1.5 2.0 2.5 3.0 3.5 25 4.0 12 50 75 100 125 150 175 Revision 1.20 2022-05-13 IKW40N65WR5 Reverse-Conducting IGBT 5 Package outlines 5 Package outlines Package Drawing PG-TO247-3 DIMENSIONS A A1 A2 b b1 b2 c D D1 D2 E E1 E2 E3 e L L1 P Q S MILLIMETERS MIN. MAX. 4.70 5.30 2.20 2.60 1.50 2.50 1.00 1.40 1.60 2.41 2.57 3.43 0.89 0.38 21.50 20.70 17.65 13.08 1.35 0.51 16.30 15.50 14.15 12.38 5.10 3.40 2.60 1.00 5.44 20.40 19.80 4.50 3.85 3.70 3.50 6.25 5.35 6.30 6.04 DOCUMENT NO. Z8B00003327 REVISION 06 SCALE 3:1 0 1 2 3 4 5mm EUROPEAN PROJECTION ISSUE DATE 25.07.2018 Figure 1 Datasheet 13 Revision 1.20 2022-05-13 IKW40N65WR5 Reverse-Conducting IGBT 6 Testing conditions 6 Testing Conditions Testing conditions VGE(t) I,V 90% VGE t rr = t a + t b Q rr = Q a + Q b dIF/dt a 10% VGE b t Qa IC(t) Qb dI 90% IC 90% IC 10% IC 10% IC Figure C. Definition of diode switching characteristics t VCE(t) t td(off) tf t tr td(on) Figure A. VGE(t) 90% VGE Figure D. 10% VGE t IC(t) CC 2% IC t Figure E. Dynamic test circuit Parasitic inductance Ls, parasitic capacitor Cs, relief capacitor Cr, (only for ZVT switching) VCE(t) t2 E off = t4 VCE x IC x dt E t1 t1 on = VCE x IC x d t 2% VCC t3 t2 t3 t4 t Figure B. Figure 2 Datasheet 14 Revision 1.20 2022-05-13 IKW40N65WR5 Reverse-Conducting IGBT Revision history Revision history Document revision Date of release Description of changes V1.1 2014-12-05 Preliminary data sheet V1.2 2015-03-27 New dynamic parameters and graphs V1.3 2015-05-12 New dynamic parameters V2.1 2015-12-10 Final data sheet n/a 2020-11-30 Datasheet migrated to a new system with a new layout and new revision number schema: target or preliminary datasheet = 0.xy; final datasheet = 1.xy 1.10 2022-03-08 Added transient gate-emitter voltage Updated diagram E = f(IC) 1.20 2022-05-13 Transient gate-emitter voltage VGE added in table “Maximum rated values” of IGBT Update of diagram “Typical switching energy losses as a function of collector current”, E = f(IC) “Forward bias safe operating area” diagram renamed to “Reverse bias safe operating area” Datasheet 15 Revision 1.20 2022-05-13 Trademarks All referenced product or service names and trademarks are the property of their respective owners. Edition 2022-05-13 Published by Infineon Technologies AG 81726 Munich, Germany © 2022 Infineon Technologies AG All Rights Reserved. Do you have a question about any aspect of this document? Email: erratum@infineon.com Document reference IFX-AAK891-006 Important notice The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics (“Beschaffenheitsgarantie”). With respect to any examples, hints or any typical values stated herein and/or any information regarding the application of the product, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation warranties of non-infringement of intellectual property rights of any third party. In addition, any information given in this document is subject to customer’s compliance with its obligations stated in this document and any applicable legal requirements, norms and standards concerning customer’s products and any use of the product of Infineon Technologies in customer’s applications. The data contained in this document is exclusively intended for technically trained staff. It is the responsibility of customer’s technical departments to evaluate the suitability of the product for the intended application and the completeness of the product information given in this document with respect to such application. Please note that this product is not qualified according to the AEC Q100 or AEC Q101 documents of the Automotive Electronics Council. Warnings Due to technical requirements products may contain dangerous substances. For information on the types in question please contact your nearest Infineon Technologies office. Except as otherwise explicitly approved by Infineon Technologies in a written document signed by authorized representatives of Infineon Technologies, Infineon Technologies’ products may not be used in any applications where a failure of the product or any consequences of the use thereof can reasonably be expected to result in personal injury.