IGBT
TRENCHSTOP™PerformancetechnologycopackedwithRAPID1
fastanti-paralleldiode
IKW50N60DTP
600VDuoPackIGBTanddiode
TRENCHSTOPTMPerformanceseries
Datasheet
IndustrialPowerControl
IKW50N60DTP
TRENCHSTOPTMPerformanceSeries
HighspeedIGBTinTrenchandFieldstoptechnology
Features:
C
TRENCHSTOPTMtechnologyoffering
•verylowVCEsat
•lowturn-offlosses
•shorttailcurrent
•lowEMI
•Verysoft,fastrecoveryanti-paralleldiode
•maximumjunctiontemperature175°C
•qualifiedaccordingtoJEDECfortargetapplications
•Pb-freeleadplating;RoHScompliant
•completeproductspectrumandPSpiceModels:
http://www.infineon.com/igbt/
G
E
Applications:
•drives
•solarinverters
•uninterruptiblepowersupplies
•converterswithmediumswitchingfrequency
G
C
E
KeyPerformanceandPackageParameters
Type
IKW50N60DTP
VCE
IC
VCEsat,Tvj=25°C
Tvjmax
Marking
Package
600V
50A
1.6V
175°C
K50DDTP
PG-TO247-3
2
Rev.2.1,2016-02-08
IKW50N60DTP
TRENCHSTOPTMPerformanceSeries
TableofContents
Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2
Table of Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
Maximum Ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
Thermal Resistance . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
Electrical Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5
Electrical Characteristics Diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7
Package Drawing . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .14
Testing Conditions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .15
Revision History . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .16
Disclaimer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .16
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IKW50N60DTP
TRENCHSTOPTMPerformanceSeries
MaximumRatings
Foroptimumlifetimeandreliability,Infineonrecommendsoperatingconditionsthatdonotexceed80%ofthemaximumratingsstatedinthisdatasheet.
Parameter
Symbol
Value
Unit
Collector-emittervoltage,Tvj≥25°C
VCE
600
V
DCcollectorcurrent,limitedbyTvjmax
TC=25°Cvaluelimitedbybondwire
TC=100°C
IC
80.0
61.0
A
Pulsedcollectorcurrent,tplimitedbyTvjmax1)
ICpuls
150.0
A
Turn off safe operating area
VCE≤600V,Tvj≤175°C,tp=1µs1)
-
150.0
A
Diodeforwardcurrent,limitedbyTvjmax
TC=25°C
TC=100°C
IF
62.0
39.0
A
Diodepulsedcurrent,tplimitedbyTvjmax1)
IFpuls
150.0
A
Gate-emitter voltage
VGE
±20
V
Short circuit withstand time
VGE=15.0V,VCC≤400V
Allowed number of short circuits < 1000
Time between short circuits: ≥ 1.0s
Tvj=150°C
tSC
PowerdissipationTC=25°C
PowerdissipationTC=100°C
Ptot
319.2
159.6
W
Operating junction temperature
Tvj
-40...+175
°C
Storage temperature
Tstg
-55...+150
°C
µs
5
Soldering temperature,
wave soldering 1.6mm (0.063in.) from case for 10s
°C
260
Mounting torque, M3 screw
Maximum of mounting processes: 3
M
0.6
Nm
ThermalResistance
Parameter
Symbol Conditions
Value
min.
typ.
max.
Unit
RthCharacteristics
IGBT thermal resistance,
junction - case
Rth(j-c)
-
0.36
0.47
K/W
Diode thermal resistance,
junction - case
Rth(j-c)
-
0.62
0.95
K/W
1)
Defined by design. Not subject to production test.
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Rev.2.1,2016-02-08
IKW50N60DTP
TRENCHSTOPTMPerformanceSeries
ElectricalCharacteristic,atTvj=25°C,unlessotherwisespecified
Parameter
Symbol Conditions
Value
Unit
min.
typ.
max.
600
-
-
V
VGE=15.0V,IC=50.0A
Tvj=25°C
Tvj=175°C
-
1.60
1.94
1.80
-
V
-
1.45
1.39
1.70
-
V
4.1
5.1
5.7
V
StaticCharacteristic
Collector-emitter breakdown voltage V(BR)CES VGE=0V,IC=0.20mA
Collector-emitter saturation voltage VCEsat
Diode forward voltage
VF
VGE=0V,IF=30.0A
Tvj=25°C
Tvj=175°C
Gate-emitter threshold voltage
VGE(th)
IC=0.80mA,VCE=VGE
Zero gate voltage collector current
ICES
VCE=600V,VGE=0V
Tvj=25°C
Tvj=175°C
-
-
40
-
µA
Gate-emitter leakage current
IGES
VCE=0V,VGE=20V
-
-
100
nA
Transconductance
gfs
VCE=20V,IC=50.0A
-
78.0
-
S
ElectricalCharacteristic,atTvj=25°C,unlessotherwisespecified
Parameter
Symbol Conditions
Value
Unit
min.
typ.
max.
-
1950
-
-
109
-
-
67
-
-
249.0
-
nC
-
13.0
-
nH
-
A
DynamicCharacteristic
Input capacitance
Cies
Output capacitance
Coes
Reverse transfer capacitance
Cres
Gate charge
QG
Internal emitter inductance
measured 5mm (0.197 in.) from
case
LE
Short circuit collector current
Max. 1000 short circuits
IC(SC)
Time between short circuits: ≥ 1.0s
VCE=25V,VGE=0V,f=1MHz
VCC=480V,IC=50.0A,
VGE=15V
VGE=15.0V,VCC≤400V,
tSC≤5µs
Tvj=150°C
-
255
pF
SwitchingCharacteristic,InductiveLoad
Parameter
Symbol Conditions
Value
Unit
min.
typ.
max.
-
20
-
ns
-
30
-
ns
-
215
-
ns
-
18
-
ns
-
1.53
-
mJ
-
0.85
-
mJ
-
2.38
-
mJ
IGBTCharacteristic,atTvj=25°C
Turn-on delay time
td(on)
Rise time
tr
Turn-off delay time
td(off)
Fall time
tf
Turn-on energy
Eon
Turn-off energy
Eoff
Total switching energy
Ets
Tvj=25°C,
VCC=400V,IC=50.0A,
VGE=0.0/15.0V,
RG(on)=7.0Ω,RG(off)=7.0Ω,
Lσ=32nH,Cσ=60pF
Lσ,CσfromFig.E
Energy losses include “tail” and
diode reverse recovery.
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Rev.2.1,2016-02-08
IKW50N60DTP
TRENCHSTOPTMPerformanceSeries
Diode reverse recovery time
trr
Diode reverse recovery charge
Qrr
Diode peak reverse recovery current Irrm
Diode peak rate of fall of reverse
recoverycurrentduringtb
Tvj=25°C,
VR=400V,
IF=30.0A,
diF/dt=870A/µs
dirr/dt
-
115
-
ns
-
0.75
-
µC
-
11.3
-
A
-
125
-
A/µs
SwitchingCharacteristic,InductiveLoad
Parameter
Symbol Conditions
Value
Unit
min.
typ.
max.
-
21
-
ns
-
34
-
ns
-
277
-
ns
-
55
-
ns
-
2.25
-
mJ
-
1.39
-
mJ
-
3.64
-
mJ
-
194
-
ns
-
2.15
-
µC
-
18.8
-
A
-
120
-
A/µs
IGBTCharacteristic,atTvj=175°C
Turn-on delay time
td(on)
Rise time
tr
Turn-off delay time
td(off)
Fall time
tf
Turn-on energy
Eon
Turn-off energy
Eoff
Total switching energy
Ets
Diode reverse recovery time
trr
Diode reverse recovery charge
Qrr
Diode peak reverse recovery current Irrm
Diode peak rate of fall of reverse
recoverycurrentduringtb
Tvj=175°C,
VCC=400V,IC=50.0A,
VGE=0.0/15.0V,
RG(on)=7.0Ω,RG(off)=7.0Ω,
Lσ=32nH,Cσ=60pF
Lσ,CσfromFig.E
Energy losses include “tail” and
diode reverse recovery.
Tvj=175°C,
VR=400V,
IF=30.0A,
diF/dt=870A/µs
dirr/dt
6
Rev.2.1,2016-02-08
IKW50N60DTP
TRENCHSTOPTMPerformanceSeries
350
300
Ptot,POWERDISSIPATION[W]
IC,COLLECTORCURRENT[A]
100
tp=1µs
10
1
250
200
150
100
50
0.1
0.1
1
10
100
0
1000
25
VCE,COLLECTOR-EMITTERVOLTAGE[V]
50
75
100
125
150
175
TC,CASETEMPERATURE[°C]
Figure 1. Forwardbiassafeoperatingarea
(D=0,TC=25°C,Tj≤175°C;VGE=15V)
Figure 2. Powerdissipationasafunctionofcase
temperature
(Tj≤175°C)
100
130
120
VGE=20V
110
IC,COLLECTORCURRENT[A]
IC,COLLECTORCURRENT[A]
15V
75
50
25
100
13V
90
11V
80
9V
70
7V
60
50
40
30
20
10
0
25
50
75
100
125
150
0
175
TC,CASETEMPERATURE[°C]
0
1
2
3
4
VCE,COLLECTOR-EMITTERVOLTAGE[V]
Figure 3. Collectorcurrentasafunctionofcase
temperature
(VGE≥15V,Tj≤175°C)
Figure 4. Typicaloutputcharacteristic
(Tj=25°C)
7
Rev.2.1,2016-02-08
IKW50N60DTP
TRENCHSTOPTMPerformanceSeries
130
100
Tj=25°C
Tj=175°C
120
VGE=20V
110
IC,COLLECTORCURRENT[A]
IC,COLLECTORCURRENT[A]
15V
100
13V
90
11V
80
9V
70
7V
60
50
40
30
75
50
25
20
10
0
0
1
2
3
0
4
0
VCE,COLLECTOR-EMITTERVOLTAGE[V]
2
4
6
8
10
VGE,GATE-EMITTERVOLTAGE[V]
Figure 5. Typicaloutputcharacteristic
(Tj=175°C)
Figure 6. Typicaltransfercharacteristic
(VCE=20V)
IC=25A
IC=50A
IC=100A
td(off)
tf
td(on)
tr
3.0
100
t,SWITCHINGTIMES[ns]
VCE(sat),COLLECTOR-EMITTERSATURATION[V]
3.5
2.5
2.0
10
1.5
1.0
25
50
75
100
125
150
1
175
Tj,JUNCTIONTEMPERATURE[°C]
1
12
23
34
45
56
67
78
89
100
IC,COLLECTORCURRENT[A]
Figure 7. Typicalcollector-emittersaturationvoltageas Figure 8. Typicalswitchingtimesasafunctionof
afunctionofjunctiontemperature
collectorcurrent
(VGE=15V)
(ind.load,Tj=175°C,VCE=400V,VGE=15/0V,
rG=7Ω,testcircuitinFig.E)
8
Rev.2.1,2016-02-08
IKW50N60DTP
TRENCHSTOPTMPerformanceSeries
1000
t,SWITCHINGTIMES[ns]
t,SWITCHINGTIMES[ns]
td(off)
tf
td(on)
tr
100
10
0
5
10
15
20
25
30
td(off)
tf
td(on)
tr
100
10
35
25
rG,GATERESISTOR[Ω]
Figure 9. Typicalswitchingtimesasafunctionofgate
resistor
(ind.load,Tj=175°C,VCE=400V,VGE=15/0V,
IC=50A,testcircuitinFig.E)
75
100
125
150
175
Figure 10. Typicalswitchingtimesasafunctionof
junctiontemperature
(ind.load,VCE=400V,VGE=15/0V,IC=50A,
rG=7Ω,testcircuitinFig.E)
6.0
11
typ.
min.
max.
Eoff
Eon
Ets
10
5.0
E,SWITCHINGENERGYLOSSES[mJ]
VGE(th),GATE-EMITTERTHRESHOLDVOLTAGE[V]
50
Tj,JUNCTIONTEMPERATURE[°C]
4.0
3.0
2.0
1.0
9
8
7
6
5
4
3
2
1
0.0
25
50
75
100
125
150
0
175
Tj,JUNCTIONTEMPERATURE[°C]
0
10
20
30
40
50
60
70
80
90
100
IC,COLLECTORCURRENT[A]
Figure 11. Gate-emitterthresholdvoltageasafunction
ofjunctiontemperature
(IC=0,8mA)
9
Figure 12. Typicalswitchingenergylossesasa
functionofcollectorcurrent
(ind.load,Tj=175°C,VCE=400V,VGE=15/0V,
rG=7Ω,testcircuitinFig.E)
Rev.2.1,2016-02-08
IKW50N60DTP
TRENCHSTOPTMPerformanceSeries
8
4.0
Eoff
Eon
Ets
3.5
E,SWITCHINGENERGYLOSSES[mJ]
E,SWITCHINGENERGYLOSSES[mJ]
7
6
5
4
3
2
1
0
Eoff
Eon
Ets
3.0
2.5
2.0
1.5
1.0
0.5
0
5
10
15
20
25
30
0.0
35
25
rG,GATERESISTOR[Ω]
Figure 13. Typicalswitchingenergylossesasa
functionofgateresistor
(ind.load,Tj=175°C,VCE=400V,VGE=15/0V,
IC=50A,testcircuitinFig.E)
75
100
125
150
175
Figure 14. Typicalswitchingenergylossesasa
functionofjunctiontemperature
(indload,VCE=400V,VGE=15/0V,IC=50A,
rG=7Ω,testcircuitinFig.E)
6.0
16
Eoff
Eon
Ets
120V
480V
14
5.0
VGE,GATE-EMITTERVOLTAGE[V]
E,SWITCHINGENERGYLOSSES[mJ]
50
Tj,JUNCTIONTEMPERATURE[°C]
4.0
3.0
2.0
12
10
8
6
4
1.0
2
0.0
300
350
400
450
500
550
0
600
VCE,COLLECTOR-EMITTERVOLTAGE[V]
0
50
100
150
200
250
QGE,GATECHARGE[nC]
Figure 15. Typicalswitchingenergylossesasa
functionofcollectoremittervoltage
(ind.load,Tj=175°C,VGE=15/0V,IC=50A,
rG=7Ω,testcircuitinFig.E)
Figure 16. Typicalgatecharge
(IC=50A)
10
Rev.2.1,2016-02-08
IKW50N60DTP
TRENCHSTOPTMPerformanceSeries
C,CAPACITANCE[pF]
1000
IC(SC),SHORTCIRCUITCOLLECTORCURRENT[A]
500
Cies
Coes
Cres
100
10
0
10
20
450
400
350
300
250
200
150
100
50
0
30
12
VCE,COLLECTOR-EMITTERVOLTAGE[V]
13
14
15
16
17
18
19
20
VGE,GATE-EMITTERVOLTAGE[V]
Figure 17. Typicalcapacitanceasafunctionof
collector-emittervoltage
(VGE=0V,f=1MHz)
Figure 18. Typicalshortcircuitcollectorcurrentasa
functionofgate-emittervoltage
(VCE≤400V,startatTj=150°C)
ZthJC,TRANSIENTTHERMALIMPEDANCE[K/W]
tSC,SHORTCIRCUITWITHSTANDTIME[µs]
16
14
12
10
8
6
4
2
0.1
D=0.5
0.2
0.1
0.05
0.02
0.01
0.01
single pulse
0.001
i:
1
2
3
4
5
6
ri[K/W]: 0.01216198 0.0542188 0.06849304 0.1687298 0.01315813 1.2E-3
τi[s]:
3.3E-5
2.0E-4
2.3E-3
0.01219856 0.09700046 1.874087
0
10
11
12
13
14
1E-4
1E-6
15
VGE,GATE-EMITTERVOLTAGE[V]
1E-5
1E-4
0.001
0.01
0.1
1
tp,PULSEWIDTH[s]
Figure 19. Shortcircuitwithstandtimeasafunctionof
gate-emittervoltage
(VCE≤400V,startatTj≤150°C)
11
Figure 20. TypicalIGBTtransientthermalimpedance
(D=tp/T)
Rev.2.1,2016-02-08
IKW50N60DTP
TRENCHSTOPTMPerformanceSeries
300
Tj=25°C, IF = 30A
Tj=175°C, IF = 30A
trr,REVERSERECOVERYTIME[ns]
ZthJC,TRANSIENTTHERMALIMPEDANCE[K/W]
1
D=0.5
0.2
0.1
0.1
0.05
0.02
0.01
0.01
single pulse
0.001
250
200
150
100
i:
1
2
3
4
5
6
ri[K/W]: 0.03101824 0.1189354 0.1745904 0.268737 0.0286638 1.4E-3
τi[s]:
2.9E-5
1.7E-4
1.7E-3
9.2E-3
0.0630565 1.832934
1E-4
1E-7
1E-6
1E-5
1E-4
0.001
0.01
0.1
50
600
1
tp,PULSEWIDTH[s]
Figure 21. Typicaldiodetransientthermalimpedance
asafunctionofpulsewidth
(D=tp/T)
900
1000
1100
1200
1300
30
Tj=25°C, IF = 30A
Tj=175°C, IF = 30A
Tj=25°C, IF = 30A
Tj=175°C, IF = 30A
2.5
Irr,REVERSERECOVERYCURRENT[A]
Qrr,REVERSERECOVERYCHARGE[µC]
800
Figure 22. Typicalreverserecoverytimeasafunction
ofdiodecurrentslope
(VR=400V)
3.0
2.0
1.5
1.0
0.5
0.0
600
700
diF/dt,DIODECURRENTSLOPE[A/µs]
700
800
900
1000
1100
1200
1300
25
20
15
10
5
0
600
700
800
900
1000
1100
1200
diF/dt,DIODECURRENTSLOPE[A/µs]
diF/dt,DIODECURRENTSLOPE[A/µs]
Figure 23. Typicalreverserecoverychargeasa
functionofdiodecurrentslope
(VR=400V)
Figure 24. Typicalreverserecoverycurrentasa
functionofdiodecurrentslope
(VR=400V)
12
1300
Rev.2.1,2016-02-08
IKW50N60DTP
TRENCHSTOPTMPerformanceSeries
0
100
Tj=25°C
Tj=175°C
90
80
-50
IF,FORWARDCURRENT[A]
dIrr/dt,diodepeakrateoffallofIrr[A/µs]
Tj=25°C, IF = 30A
Tj=175°C, IF = 30A
-100
-150
70
60
50
40
30
20
10
-200
600
700
800
900
1000
1100
1200
1300
diF/dt,DIODECURRENTSLOPE[A/µs]
0
0.0
0.5
1.0
1.5
2.0
2.5
VF,FORWARDVOLTAGE[V]
Figure 25. Typicaldiodepeakrateoffallofreverse
recoverycurrentasafunctionofdiode
currentslope
(VR=400V)
Figure 26. Typicaldiodeforwardcurrentasafunction
offorwardvoltage
2.0
IF=15A
IF=30A
IF=60A
VF,FORWARDVOLTAGE[V]
1.8
1.6
1.4
1.2
1.0
0.8
25
50
75
100
125
150
175
Tj,JUNCTIONTEMPERATURE[°C]
Figure 27. Typicaldiodeforwardvoltageasafunction
ofjunctiontemperature
13
Rev.2.1,2016-02-08
IKW50N60DTP
TRENCHSTOPTMPerformanceSeries
Package Drawing PG-TO247-3
14
Rev.2.1,2016-02-08
IKW50N60DTP
TRENCHSTOPTMPerformance Series
Testing Conditions
VGE(t)
I,V
90% VGE
t rr = t a + t b
Q rr = Q a + Q b
dIF/dt
a
10% VGE
b
t
Qa
IC(t)
Qb
dI
90% IC
90% IC
10% IC
10% IC
Figure C. Definition of diode switching
characteristics
t
VCE(t)
t
td(off)
tf
td(on)
t
tr
Figure A.
VGE(t)
90% VGE
Figure D.
10% VGE
t
IC(t)
CC
2% IC
t
Figure E. Dynamic test circuit
Parasitic inductance Ls,
parasitic capacitor Cs,
relief capacitor Cr,
(only for ZVT switching)
VCE(t)
t2
E
off
=
t4
VCE x IC x dt
E
t1
t1
on
=
VCE x IC x d t
2% VCE
t3
t2
t3
t4
t
Figure B.
15
Rev.2.1,2016-02-08
IKW50N60DTP
TRENCHSTOPTMPerformanceSeries
RevisionHistory
IKW50N60DTP
Revision:2016-02-08,Rev.2.1
Previous Revision
Revision
Date
Subjects (major changes since last revision)
2.1
-
Release final datasheet
Publishedby
InfineonTechnologiesAG
81726München,Germany
©InfineonTechnologiesAG2016.
AllRightsReserved.
ImportantNotice
Theinformationgiveninthisdocumentshallinnoeventberegardedasaguaranteeofconditionsorcharacteristics
(“Beschaffenheitsgarantie”).Withrespecttoanyexamples,hintsoranytypicalvaluesstatedhereinand/orany
informationregardingtheapplicationoftheproduct,InfineonTechnologiesherebydisclaimsanyandallwarrantiesand
liabilitiesofanykind,includingwithoutlimitationwarrantiesofnon-infringementofintellectualpropertyrightsofanythird
party.
Inaddition,anyinformationgiveninthisdocumentissubjecttocustomer’scompliancewithitsobligationsstatedinthis
documentandanyapplicablelegalrequirements,normsandstandardsconcerningcustomer’sproductsandanyuseof
theproductofInfineonTechnologiesincustomer’sapplications.
Thedatacontainedinthisdocumentisexclusivelyintendedfortechnicallytrainedstaff.Itistheresponsibilityof
customer’stechnicaldepartmentstoevaluatethesuitabilityoftheproductfortheintendedapplicationandthe
completenessoftheproductinformationgiveninthisdocumentwithrespecttosuchapplication.
Forfurtherinformationontheproduct,technology,deliverytermsandconditionsandpricespleasecontactyournearest
InfineonTechnologiesoffice(www.infineon.com).
PleasenotethatthisproductisnotqualifiedaccordingtotheAECQ100orAECQ101documentsoftheAutomotive
ElectronicsCouncil.
Warnings
Duetotechnicalrequirementsproductsmaycontaindangeroussubstances.Forinformationonthetypesinquestion
pleasecontactyournearestInfineonTechnologiesoffice.
ExceptasotherwiseexplicitlyapprovedbyInfineonTechnologiesinawrittendocumentsignedbyauthorized
representativesofInfineonTechnologies,InfineonTechnologies’productsmaynotbeusedinanyapplicationswherea
failureoftheproductoranyconsequencesoftheusethereofcanreasonablybeexpectedtoresultinpersonalinjury.
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Rev.2.1,2016-02-08