IPA093N06N3 G
Type
OptiMOSTM3 Power-Transistor
Product Summary
Features
• Ideal for high frequency switching and sync. rec.
• Optimized technology for DC/DC converters
VDS
60
V
RDS(on),max
9.3
mW
ID
43
A
• Excellent gate charge x R DS(on) product (FOM)
• N-channel, normal level
• 100% avalanche tested
• Pb-free plating; RoHS compliant
• Qualified according to JEDEC1) for target applications
Type
IPA093N06N3 G
Package
PG-TO220 FP
Marking
093N06N
Maximum ratings, at T j=25 °C, unless otherwise specified
Parameter
Symbol Conditions
Continuous drain current
ID
Value
T C=25 °C
43
T C=100 °C
31
Unit
A
Pulsed drain current2)
I D,pulse
T C=25 °C
172
Avalanche energy, single pulse3)
E AS
I D=50 A, R GS=25 W
43
mJ
Gate source voltage
V GS
±20
V
Power dissipation
P tot
33
W
Operating and storage temperature
T j, T stg
-55 ... 175
°C
T C=25 °C
IEC climatic category; DIN IEC 68-1
55/175/56
1)
J-STD20 and JESD22
See figure 3 for more detailed information
3)
See figure 13 for more detailed information
2)
Rev. 2.1
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2017-01-12
IPA093N06N3 G
Parameter
Values
Symbol Conditions
Unit
min.
typ.
max.
-
-
4.6
Thermal characteristics
Thermal resistance, junction - case
R thJC
K/W
Electrical characteristics, at T j=25 °C, unless otherwise specified
Static characteristics
Drain-source breakdown voltage
V (BR)DSS V GS=0 V, I D=1 mA
60
-
-
Gate threshold voltage
V GS(th)
V DS=V GS, I D=34 µA
2
3
4
Zero gate voltage drain current
I DSS
V DS=60 V, V GS=0 V,
T j=25 °C
-
0.1
1
V DS=60 V, V GS=0 V,
T j=125 °C
-
10
100
V
µA
Gate-source leakage current
I GSS
V GS=20 V, V DS=0 V
-
1
100
nA
Drain-source on-state resistance
R DS(on)
V GS=10 V, I D=40 A
-
7.8
9.3
mW
Gate resistance
RG
-
0.9
-
W
Transconductance
g fs
26
51
-
S
Rev. 2.1
|V DS|>2|I D|R DS(on)max,
I D=40 A
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IPA093N06N3 G
Parameter
Values
Symbol Conditions
Unit
min.
typ.
max.
-
2900
3900
-
640
850
Dynamic characteristics
Input capacitance
C iss
Output capacitance
C oss
Reverse transfer capacitance
C rss
-
23
-
Turn-on delay time
t d(on)
-
15
-
Rise time
tr
-
40
-
Turn-off delay time
t d(off)
-
20
-
Fall time
tf
-
5
-
Gate to source charge
Q gs
-
16
-
Gate to drain charge
Q gd
-
3
-
Switching charge
Q sw
-
10
-
Gate charge total
Qg
-
36
48
Gate plateau voltage
V plateau
-
5.5
-
Output charge
Q oss
-
29
38
nC
-
-
43
A
-
-
172
-
1.0
1.2
V
-
45
-
ns
-
40
-
nC
V GS=0 V, V DS=30 V,
f =1 MHz
V DD=30 V, V GS=10 V,
I D=45 A, R G,ext=3.5 W
pF
ns
Gate Charge Characteristics4)
V DD=30 V, I D=40 A,
V GS=0 to 10 V
V DD=30 V, V GS=0 V
nC
V
Reverse Diode
Diode continous forward current
IS
Diode pulse current
I S,pulse
Diode forward voltage
V SD
Reverse recovery time
t rr
Reverse recovery charge
Q rr
4)
T C=25 °C
V GS=0 V, I F=40 A,
T j=25 °C
V R=30 V, IF=45A,
di F/dt =100 A/µs
See figure 16 for gate charge parameter definition
Rev. 2.1
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IPA093N06N3 G
1 Power dissipation
2 Drain current
P tot=f(T C)
I D=f(T C); V GS≥10 V
40
50
40
30
ID [A]
Ptot [W]
30
20
20
10
10
0
0
0
50
100
150
200
0
50
100
TC [°C]
150
200
TC [°C]
3 Safe operating area
4 Max. transient thermal impedance
I D=f(V DS); T C=25 °C; D =0
Z thJC=f(t p)
parameter: t p
parameter: D =t p/T
103
101
limited by on-state
resistance
1 µs
102
0.5
10 µs
100
0.2
ZthJC [K/W]
ID [A]
100 µs
101
1 ms
0.05
0.02
0.01
10-1
10 ms
single pulse
DC
100
10-1
10-2
10-1
100
101
102
VDS [V]
Rev. 2.1
0.1
10-5
10-4
10-3
10-2
10-1
100
101
tp [s]
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IPA093N06N3 G
5 Typ. output characteristics
6 Typ. drain-source on resistance
I D=f(V DS); T j=25 °C
R DS(on)=f(I D); T j=25 °C
parameter: V GS
parameter: V GS
180
20
8V
160
5.5 V
5V
19
10 V
6V
7V
6.5 V
18
7V
17
140
16
15
RDS(on) [mW]
120
ID [A]
6.5 V
100
80
6V
60
14
13
12
11
8V
10
9
40
5.5 V
20
5V
10 V
8
7
6
4.5 V
0
0
1
2
5
3
4
5
0
20
40
60
VDS [V]
80
100 120 140 160 180
ID [A]
7 Typ. transfer characteristics
8 Typ. forward transconductance
I D=f(V GS); |V DS|>2|I D|R DS(on)max
g fs=f(I D); T j=25 °C
parameter: T j
120
100
100
80
80
gfs [S]
ID [A]
60
60
40
40
175 °C
25 °C
20
20
0
0
0
2
4
6
8
20
40
60
80
100
120
140
160
ID [A]
VGS [V]
Rev. 2.1
0
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IPA093N06N3 G
9 Drain-source on-state resistance
10 Typ. gate threshold voltage
R DS(on)=f(T j); I D=40 A; V GS=10 V
V GS(th)=f(T j); V GS=V DS
parameter: I D
20
5
18
16
4
12
340 µA
3
VGS(th) [V]
RDS(on) [mW]
14
max
10
typ
8
34 µA
2
6
4
1
2
0
0
-60
-20
20
60
100
140
180
-60
-20
20
Tj [°C]
60
100
140
180
Tj [°C]
11 Typ. capacitances
12 Forward characteristics of reverse diode
C =f(V DS); V GS=0 V; f =1 MHz
I F=f(V SD)
parameter: T j
104
103
Ciss
103
Coss
102
175 °C, max
IF [A]
C [pF]
25 °C
175 °C
102
25 °C, max
Crss
101
101
100
0
20
40
60
VDS [V]
Rev. 2.1
0
0.5
1
1.5
2
VSD [V]
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IPA093N06N3 G
13 Avalanche characteristics
14 Typ. gate charge
I AS=f(t AV); R GS=25 W
V GS=f(Q gate); I D=40 A pulsed
parameter: T j(start)
parameter: V DD
100
10
30 V
48 V
12 V
8
150 °C
100 °C
25 °C
VGS [V]
IAS [A]
6
10
4
2
1
0
0.1
1
10
100
1000
0
5
tAV [µs]
10
15
20
25
30
35
40
Qgate [nC]
15 Drain-source breakdown voltage
16 Gate charge waveforms
V BR(DSS)=f(T j); I D=1 mA
70
V GS
Qg
VBR(DSS) [V]
65
60
V gs(th)
55
Q g(th)
Q sw
Q gs
50
-60
-20
20
60
100
140
Q gate
Q gd
180
Tj [°C]
Rev. 2.1
page 7
2017-01-12
IPA093N06N3 G
PG-TO220 FullPAK
Rev. 2.1
page 8
2017-01-12
IPA093N06N3 G
Published by
Infineon Technologies AG
81726 Munich, Germany
© 2017 Infineon Technologies AG
All Rights Reserved.
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conditions or characteristics. With respect to any examples or hints given herein, any typical
values stated herein and/or any information regarding the application of the device,
Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind,
including without limitation, warranties of non-infringement of intellectual property rights
of any third party.
Information
For further information on technology, delivery terms and conditions and prices, please
contact the nearest Infineon Technologies Office (www.infineon.com).
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on the types in question, please contact the nearest Infineon Technologies Office.
Infineon Technologies components may be used in life-support devices or systems only with
the express written approval of Infineon Technologies, if a failure of such components can
reasonably be expected to cause the failure of that life-support device or system or to affect
the safety or effectiveness of that device or system. Life support devices or systems are
intended to be implanted in the human body or to support and/or maintain and sustain
and/or protect human life. If they fail, it is reasonable to assume that the health of the user
or other persons may be endangered.
Rev. 2.1
page 9
2017-01-12