IPB120N08S4-03
IPI120N08S4-03, IPP120N08S4-03
OptiMOS™-T2 Power-Transistor
Product Summary
V DS
80
V
R DS(on),max (SMD version)
2.5
mW
ID
120
A
Features
• N-channel - Enhancement mode
PG-TO263-3-2
• AEC Q101 qualified
PG-TO262-3-1
PG-TO220-3-1
• MSL1 up to 260°C peak reflow
• 175°C operating temperature
• Green Product (RoHS compliant)
• 100% Avalanche tested
Type
Package
Marking
IPB120N08S4-03
PG-TO263-3-2
4N0803
IPI120N08S4-03
PG-TO262-3-1
4N0803
IPP120N08S4-03
PG-TO220-3-1
4N0803
Maximum ratings, at T j=25 °C, unless otherwise specified
Parameter
Symbol
Continuous drain current
ID
Conditions
Value
T C=25°C, V GS=10V1)
120
T C=100°C, V GS=10V2)
120
Unit
A
Pulsed drain current2)
I D,pulse
T C=25°C
480
Avalanche energy, single pulse2)
E AS
I D=60A
920
mJ
Avalanche current, single pulse
I AS
-
120
A
Gate source voltage
V GS
-
±20
V
Power dissipation
P tot
T C=25°C
278
W
Operating and storage temperature
T j, T stg
-
-55 ... +175
°C
Rev. 1.0
page 1
2014-06-20
IPB120N08S4-03
IPI120N08S4-03, IPP120N08S4-03
Parameter
Symbol
Values
Conditions
Unit
min.
typ.
max.
Thermal characteristics2)
Thermal resistance, junction - case
R thJC
-
-
-
0.54
Thermal resistance, junction ambient, leaded
R thJA
-
-
-
62
SMD version, device on PCB
R thJA
minimal footprint
-
-
62
6 cm2 cooling area3)
-
-
40
K/W
Electrical characteristics, at T j=25 °C, unless otherwise specified
Static characteristics
Drain-source breakdown voltage
V (BR)DSS V GS=0V, I D= 1mA
80
-
-
Gate threshold voltage
V GS(th)
V DS=V GS, I D=223µA
2.0
3.0
4.0
Zero gate voltage drain current
I DSS
V DS=80V, V GS=0V
-
0.01
1
T j=125°C2)
-
10
200
V DS=80V, V GS=0V,
V
µA
Gate-source leakage current
I GSS
V GS=20V, V DS=0V
-
-
100
nA
Drain-source on-state resistance
R DS(on)
V GS=10V, I D=100A
-
2.4
2.8
mW
V GS=10V, I D=100A,
SMD version
-
2.1
2.5
Rev. 1.0
page 2
2014-06-20
IPB120N08S4-03
IPI120N08S4-03, IPP120N08S4-03
Parameter
Symbol
Values
Conditions
Unit
min.
typ.
max.
-
8884
11550 pF
-
3435
4465
Dynamic characteristics2)
Input capacitance
C iss
Output capacitance
C oss
Reverse transfer capacitance
Crss
-
177
354
Turn-on delay time
t d(on)
-
30
-
Rise time
tr
-
15
-
Turn-off delay time
t d(off)
-
60
-
Fall time
tf
-
50
-
Gate to source charge
Q gs
-
43
57
Gate to drain charge
Q gd
-
27
55
Gate charge total
Qg
-
128
167
Gate plateau voltage
V plateau
-
4.9
-
V
-
-
120
A
-
-
480
V GS=0V, V DS=25V,
f =1MHz
V DD=40V, V GS=10V,
I D=120A, R G=3.5W
ns
Gate Charge Characteristics2)
V DD=64V, I D=120A,
V GS=0 to 10V
nC
Reverse Diode
Diode continous forward current2)
IS
Diode pulse current2)
I S,pulse
Diode forward voltage
V SD
V GS=0V, I F=100A,
T j=25°C
-
0.9
1.3
V
Reverse recovery time2)
t rr
V R=40V, I F=50A,
di F/dt =100A/µs
-
80
-
ns
Reverse recovery charge2)
Q rr
-
160
-
nC
T C=25°C
1)
Current is limited by bondwire; with an R thJC = 0.54K/W the chip is able to carry 245A at 25°C.
2)
Specified by design. Not subject to production test.
3)
Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm2 (one layer, 70 µm thick) copper area for drain
connection. PCB is vertical in still air.
Rev. 1.0
page 3
2014-06-20
IPB120N08S4-03
IPI120N08S4-03, IPP120N08S4-03
1 Power dissipation
2 Drain current
P tot = f(T C); V GS ≥ 6 V
I D = f(T C); V GS = 10 V; SMD
300
140
120
250
100
80
I D [A]
P tot [W]
200
150
60
100
40
50
20
0
0
0
50
100
150
200
0
50
100
T C [°C]
150
200
T C [°C]
3 Safe operating area
4 Max. transient thermal impedance
I D = f(V DS); T C = 25 °C; D = 0; SMD
Z thJC = f(t p)
parameter: t p
parameter: D =t p/T
100
1000
1 µs
0.5
10 µs
100 µs
1 ms
10-1
I D [A]
Z thJC [K/W]
100
10-2
10
0.1
0.05
0.01
single pulse
1
0.1
1
10
100
10-3
10-6
10-5
10-4
-3
t 10
p [s]
10-2
10-1
100
V DS [V]
Rev. 1.0
page 4
2014-06-20
IPB120N08S4-03
IPI120N08S4-03, IPP120N08S4-03
5 Typ. output characteristics
6 Typ. drain-source on-state resistance
I D = f(V DS); T j = 25 °C; SMD
R DS(on) = f(I D); T j = 25 °C; SMD
parameter: V GS
parameter: V GS
480
8
7V
10
V
6.5 V
6V
6
R DS(on) [mW]
I D [A]
360
5.5 V
240
5V
4
5.5 V
6V
7V
5V
120
10 V
2
0
0
0
1
2
3
4
5
0
80
160
V DS [V]
240
320
I D [A]
7 Typ. transfer characteristics
8 Typ. drain-source on-state resistance
I D = f(V GS); V DS = 6V
R DS(on) = f(T j); I D = 120 A; V GS = 10 V; SMD
parameter: T j
480
4
-55 °C 25 °C 175 °C
3.5
360
R DS(on) [mW]
I D [A]
3
240
2.5
2
120
1.5
0
2
3
4
5
6
7
8
-60
-20
20
60
100
140
180
T j [°C]
V GS [V]
Rev. 1.0
1
page 5
2014-06-20
IPB120N08S4-03
IPI120N08S4-03, IPP120N08S4-03
9 Typ. gate threshold voltage
10 Typ. capacitances
V GS(th) = f(T j); V GS = V DS
C = f(V DS); V GS = 0 V; f = 1 MHz
parameter: I D
105
4
3.5
104
C [pF]
3
2200 µA
V GS(th) [V]
Ciss
Coss
103
2.5
220 µA
2
Crss
2
10
1.5
1
101
-60
-20
20
60
100
140
0
180
20
T j [°C]
40
60
80
V DS [V]
11 Typical forward diode characteristicis
12 Avalanche characteristics
IF = f(VSD)
I A S= f(t AV)
parameter: T j
parameter: Tj(start)
103
1000
102
100
25 °C
I AV [A]
I F [A]
100 °C
175 °C
175 °C 25 °C
25 °C
101
10
100
1
0
0.2
0.4
0.6
0.8
1
1.2
1.4
V SD [V]
Rev. 1.0
150 °C
0.1
1
10
100
1000
t AV [µs]
page 6
2014-06-20
IPB120N08S4-03
IPI120N08S4-03, IPP120N08S4-03
13 Avalanche energy
14 Drain-source breakdown voltage
E AS = f(T j)
V BR(DSS) = f(T j); I D = 1 mA
2000
88
1500
84
V BR(DSS) [V]
E AS [mJ]
parameter: I D
1000
30 A
80
60 A
76
500
120 A
72
0
25
75
125
-55
175
-15
25
65
105
145
T j [°C]
T j [°C]
15 Typ. gate charge
16 Gate charge waveforms
V GS = f(Q gate); I D = 120 A pulsed
parameter: V DD
10
V GS
9
Qg
8
16 V
7
64 V
V GS [V]
6
5
V g s(th)
4
3
2
Q g (th)
Q sw
1
Q gs
0
0
30
60
90
120
Q gate
Q gd
150
Q gate [nC]
Rev. 1.0
page 7
2014-06-20
IPB120N08S4-03
IPI120N08S4-03, IPP120N08S4-03
Published by
Infineon Technologies AG
81726 Munich, Germany
© Infineon Technologies AG 2014
All Rights Reserved.
Legal Disclaimer
The information given in this document shall in no event be regarded as a guarantee of conditions
or characteristics. With respect to any examples or hints given herein, any typical values stated
herein and/or any information regarding the application of the device, Infineon Technologies hereby
disclaims any and all warranties and liabilities of any kind, including without limitation, warranties
of non-infringement of intellectual property rights of any third party.
Information
For further information on technology, delivery terms and conditions and prices, please contact
the nearest Infineon Technologies Office (www.infineon.com).
Warnings
Due to technical requirements, components may contain dangerous substances.
For information on the types in question, please contact the nearest Infineon Technologies Office.
Infineon Technologies components may be used in life-support devices or systems only with the
express written approval of Infineon Technologies, if a failure of such components can reasonably be
expected to cause the failure of that life-support device or system or to affect the safety or
effectiveness of that device or system. Life support devices or systems are intended to be implanted
in the human body or to support and/or maintain and sustain and/or protect human life.
If they fail, it is reasonable to assume that the health of the user or other persons may be endangered.
Rev. 1.0
page 8
2014-06-20
IPB120N08S4-03
IPI120N08S4-03, IPP120N08S4-03
Revision History
Version
Date
Changes
Revision 1.0
Rev. 1.0
20.06.2014 Final data sheet
page 9
2014-06-20