IPB180N08S402ATMA1

IPB180N08S4-02 OptiMOS™-T2 Power-Transistor Product Summary V DS 80 V R DS(on),max 2.2 mW ID 180 A Features • N-channel - Enhancement mode PG-TO263-7-3 • AEC Q101 qualified • MSL1 up to 260°C peak reflow • 175°C operating temperature • Green Product (RoHS compliant) • 100% Avalanche tested • Ultra low RDSon • Ultra high ID Type Package Marking IPB180N08S4-02 PG-TO263-7-3 4N0802 Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Symbol Continuous drain current1) ID Conditions Value T C=25°C, V GS=10V 180 T C=100°C, V GS=10V2) 180 Unit A Pulsed drain current2) I D,pulse T C=25°C 720 Avalanche energy, single pulse2) E AS I D=90A 640 mJ Avalanche current, single pulse I AS - 175 A Gate source voltage V GS - ±20 V Power dissipation P tot T C=25°C 277 W Operating and storage temperature T j, T stg - -55 ... +175 °C Rev. 1.0 page 1 2014-06-20 IPB180N08S4-02 Parameter Symbol Values Conditions Unit min. typ. max. Thermal characteristics2) Thermal resistance, junction - case R thJC - - - 0.54 SMD version, device on PCB R thJA minimal footprint - - 62 6 cm2 cooling area3) - - 40 K/W Electrical characteristics, at T j=25 °C, unless otherwise specified Static characteristics Drain-source breakdown voltage V (BR)DSS V GS=0V, I D= 1mA 80 - - Gate threshold voltage V GS(th) V DS=V GS, I D=220µA 2.0 3.0 4.0 Zero gate voltage drain current I DSS V DS=80V, V GS=0V, T j=25°C - 0.03 1 T j=125°C2) - 10 200 V DS=80V, V GS=0V, V µA Gate-source leakage current I GSS V GS=20V, V DS=0V - - 100 nA Drain-source on-state resistance R DS(on) V GS=10V, I D=100A - 1.8 2.2 mW Rev. 1.0 page 2 2014-06-20 IPB180N08S4-02 Parameter Symbol Values Conditions Unit min. typ. max. - 8884 11550 pF - 3435 4465 Dynamic characteristics2) Input capacitance C iss Output capacitance C oss Reverse transfer capacitance Crss - 177 354 Turn-on delay time t d(on) - 30 - Rise time tr - 15 - Turn-off delay time t d(off) - 50 - Fall time tf - 50 - Gate to source charge Q gs - 45 58 Gate to drain charge Q gd - 27 55 Gate charge total Qg - 128 167 Gate plateau voltage V plateau - 5.1 - V - - 180 A - - 720 V GS=0V, V DS=25V, f =1MHz V DD=40V, V GS=10V, I D=180A, R G=3.5W ns Gate Charge Characteristics2) V DD=64V, I D=180A, V GS=0 to 10V nC Reverse Diode Diode continous forward current2) IS Diode pulse current2) I S,pulse Diode forward voltage V SD V GS=0V, I F=100A, T j=25°C - 1 1.2 V Reverse recovery time2) t rr V R=40V, I F=50A, di F/dt =100A/µs - 80 - ns Reverse recovery charge2) Q rr - 160 - nC T C=25°C 1) Current is limited by bondwire; with an R thJC = 0.54K/W the chip is able to carry 237A at 25°C. 2) Specified by design. Not subject to production test. 3) Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm2 (one layer, 70 µm thick) copper area for drain connection. PCB is vertical in still air. Rev. 1.0 page 3 2014-06-20 IPB180N08S4-02 1 Power dissipation 2 Drain current P tot = f(T C); V GS ≥ 6 V I D = f(T C); V GS ≥ 6 V; SMD 300 200 250 160 200 I D [A] P tot [W] 120 150 80 100 40 50 0 0 0 50 100 150 200 0 50 100 T C [°C] 150 200 T C [°C] 3 Safe operating area 4 Max. transient thermal impedance I D = f(V DS); T C = 25 °C; D = 0; SMD Z thJC = f(t p) parameter: t p parameter: D =t p/T 100 1000 1 µs 10 µs 0.5 100 µs 1 ms 10-1 I D [A] Z thJC [K/W] 100 10-2 10 0.1 0.05 0.01 single pulse 1 0.1 1 10 100 10-3 10-6 10-5 10-4 -3 t 10 p [s] 10-2 10-1 100 V DS [V] Rev. 1.0 page 4 2014-06-20 IPB180N08S4-02 5 Typ. output characteristics 6 Typ. drain-source on-state resistance I D = f(V DS); T j = 25 °C; SMD R DS(on) = f(I D); T j = 25 °C; SMD parameter: V GS parameter: V GS 720 6 10 V 5V 7V 640 5 560 480 4 R DS(on) [mW] I D [A] 6V 400 320 5.5 V 240 3 5.5 V 6V 7V 2 160 10 V 5V 1 80 0 0 0 1 2 3 4 5 0 90 V DS [V] 180 I D [A] 7 Typ. transfer characteristics 8 Typ. drain-source on-state resistance I D = f(V GS); V DS = 6V R DS(on) = f(T j); I D = 100 A; V GS = 10 V; SMD parameter: T j 720 3.5 -55 °C 640 25 °C 175 °C 3 560 R DS(on) [mW] I D [A] 480 400 320 2.5 2 240 160 1.5 80 0 3 4 5 6 7 -60 -20 20 60 100 140 180 T j [°C] V GS [V] Rev. 1.0 1 page 5 2014-06-20 IPB180N08S4-02 9 Typ. gate threshold voltage 10 Typ. capacitances V GS(th) = f(T j); V GS = V DS C = f(V DS); V GS = 0 V; f = 1 MHz parameter: I D 105 3.5 3 104 220 µA 2.5 Ciss C [pF] V GS(th) [V] 2200 µA Coss 103 2 Crss 102 1.5 101 1 -60 -20 20 60 100 140 0 180 10 20 30 T j [°C] 40 50 60 70 80 V DS [V] 11 Typical forward diode characteristicis 12 Avalanche characteristics IF = f(VSD) I A S= f(t AV) parameter: T j parameter: Tj(start) 103 1000 102 100 25 °C 100 °C I AV [A] I F [A] 150 °C 175 °C 175 °C 25 °C 101 10 100 1 0 0.2 0.4 0.6 0.8 1 1.2 1.4 V SD [V] Rev. 1.0 1 10 100 1000 t AV [µs] page 6 2014-06-20 IPB180N08S4-02 13 Avalanche energy 14 Drain-source breakdown voltage E AS = f(T j); I D = 90 A V BR(DSS) = f(T j); I D = 1 mA 90 2500 88 44 A 86 2000 V BR(DSS) [V] E AS [mJ] 84 1500 87 A 1000 82 80 78 76 74 175 A 500 72 70 0 25 75 125 -55 175 -15 T j [°C] 25 65 105 145 T j [°C] 15 Typ. gate charge 16 Gate charge waveforms V GS = f(Q gate); I D = 180 A pulsed parameter: V DD 10 V GS 9 Qg 16 V 8 64 V 7 V GS [V] 6 5 V g s(th) 4 3 2 Q g (th) Q sw 1 Q gs 0 0 40 80 Q gate Q gd 120 Q gate [nC] Rev. 1.0 page 7 2014-06-20 IPB180N08S4-02 Published by Infineon Technologies AG 81726 Munich, Germany © Infineon Technologies AG 2014 All Rights Reserved. Legal Disclaimer The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics. With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation, warranties of non-infringement of intellectual property rights of any third party. Information For further information on technology, delivery terms and conditions and prices, please contact the nearest Infineon Technologies Office (www.infineon.com). Warnings Due to technical requirements, components may contain dangerous substances. For information on the types in question, please contact the nearest Infineon Technologies Office. Infineon Technologies components may be used in life-support devices or systems only with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. Rev. 1.0 page 8 2014-06-20 IPB180N08S4-02 Revision History Version Date Changes Revision 1.0 Rev. 1.0 20.06.2014 Final data sheet page 9 2014-06-20