IPB180P04P4L02ATMA1

Final Data Sheet OptiMOS®-P2 Power-Transistor IPB180P04P4L-02 Product Summary V DS -40 V R DS(on),max 2.4 mW ID -180 Features A PG-TO263-7-3 • P-channel - Logic Level - Enhancement mode • AEC qualified • MSL1 up to 260°C peak reflow • 175°C operating temperature • Green Product (RoHS compliant) • 100% Avalanche tested Drain Pin 4, Tab • Intended for reverse battery protection Gate Pin 1 Type Package Marking IPB180P04P4L-02 PG-TO263-7-3 4QP04L02 Source Pin 2, 3, 5, 6, 7 Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Symbol Continuous drain current ID Conditions T C=25°C, V GS=-10V1) T C=100°C, Value -180 V GS=-10V2) -140 Unit A Pulsed drain current2) I D,pulse T C=25°C -720 Avalanche energy, single pulse E AS I D= -90A 84 Avalanche current, single pulse I AS - -180 A Gate source voltage V GS - ±163) V Power dissipation P tot T C=25°C 150 W Operating and storage temperature T j, T stg - -55 ... +175 °C IEC climatic category; DIN IEC 68-1 - - 55/175/56 Rev. 1.3 page 1 mJ 2011-04-27 Final Data Sheet Parameter Symbol IPB180P04P4L-02 Values Conditions Unit min. typ. max. Thermal characteristics2) Thermal resistance, junction - case R thJC - - - 1 SMD version, device on PCB R thJA minimal footprint - - 62 6 cm2 cooling area4) - - 40 K/W Electrical characteristics, at T j=25 °C, unless otherwise specified Static characteristics Drain-source breakdown voltage V (BR)DSS V GS=0V, I D= -1mA -40 - - Gate threshold voltage V GS(th) V DS=V GS, I D=-410µA -1.2 -1.7 -2.2 Zero gate voltage drain current I DSS V DS=-32V, V GS=0V, T j=25°C - -0.1 -1 T j=125°C2) - -20 -200 V DS=-32V, V GS=0V, V µA Gate-source leakage current I GSS V GS=-16V, V DS=0V - - -100 nA Drain-source on-state resistance R DS(on) V GS=-4.5V, I D=-100A - 2.6 3.9 mW V GS=-10V, I D=-100A - 1.8 2.4 Rev. 1.3 page 2 2011-04-27 Final Data Sheet Parameter Symbol IPB180P04P4L-02 Values Conditions Unit min. typ. max. - 14400 18700 pF - 4570 5900 Dynamic characteristics2) Input capacitance C iss Output capacitance C oss Reverse transfer capacitance Crss - 180 360 Turn-on delay time t d(on) - 32 - Rise time tr - 28 - Turn-off delay time t d(off) - 146 - Fall time tf - 119 - Gate to source charge Q gs - 50 65 Gate to drain charge Q gd - 38 76 Gate charge total Qg - 220 286 Gate plateau voltage V plateau - -3.5 - V - - -180 A - - -720 V GS=0V, V DS=-25V, f =1MHz V DD=-20V, V GS=-10V, I D=-180A, R G=3.5W ns Gate Charge Characteristics2) V DD=-32 V, I D=-180 A, V GS=0 to -10 V nC Reverse Diode Diode continous forward current2) IS Diode pulse current2) I S,pulse Diode forward voltage V SD V GS=0V, I F=-100A, T j=25°C - -1.0 -1.3 V Reverse recovery time2) t rr V R=-20V, I F=-50A, di F/dt =-100A/µs - 71 - ns Reverse recovery charge2) Q rr - 101 - nC T C=25°C 1) Current is limited by bondwire; with an R thJC = 1K/W the chip is able to carry 200A at 25°C. 2) Specified by design. Not subject to production test. 3) VGS=+5V/-16V according AEC; VGS=+16V for max 168h at TJ=175°C 4) Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm2 (one layer, 70 µm thick) copper area for drain connection. PCB is vertical in still air. Rev. 1.3 page 3 2011-04-27 Final Data Sheet IPB180P04P4L-02 1 Power dissipation 2 Drain current P tot = f(T C); V GS ≤ -6V I D = f(T C); V GS ≤ -6V 160 140 120 -I D [A] P tot [W] 100 80 60 40 20 0 0 50 100 150 200 190 180 170 160 150 140 130 120 110 100 90 80 70 60 50 40 30 20 10 0 200 0 50 100 T C [°C] 150 200 T C [°C] 3 Safe operating area 4 Max. transient thermal impedance I D = f(V DS); T C = 25 °C; D = 0 Z thJC = f(t p) parameter: t p parameter: D =t p/T 1000 101 1 µs 10 µs 100 µs 100 0.5 1 ms -I D [A] Z thJC [K/W] 100 0.1 10-1 0.01 0.05 10 10-2 single pulse 10-3 1 0.1 1 10 100 10-5 10-4 10-3 10-2 10-1 100 t p [s] -V DS [V] Rev. 1.3 10-6 page 4 2011-04-27 Final Data Sheet IPB180P04P4L-02 5 Typ. output characteristics 6 Typ. drain-source on-state resistance I D = f(V DS); T j = 25°C R DS(on) = f(I D); T j = 25°C parameter: V GS parameter: V GS 20 -5 V 700 -2.8 V -10 V -3.5 V -3 V 18 600 16 -4.5 V 14 R DS(on) [mW] -I D [A] 500 400 -4 V 300 12 10 8 6 200 -3.5 V 4 -4 V 100 -4.5 V 2 -3 V 0 -10 V 0 0 1 2 3 4 5 6 0 50 100 -V DS [V] 150 -I D [A] 7 Typ. transfer characteristics 8 Typ. drain-source on-state resistance I D = f(V GS); V DS = -6V R DS(on) = f(T j); I D = -100A; V GS = -10V parameter: T j 3 700 600 2.5 R DS(on) [mW] -I D [A] 500 400 300 2 200 1.5 175 °C 100 25 °C -55 °C 0 0 1 2 3 4 5 6 -V GS [V] Rev. 1.3 1 -60 -20 20 60 100 140 180 T j [°C] page 5 2011-04-27 Final Data Sheet IPB180P04P4L-02 9 Typ. gate threshold voltage 10 Typ. capacitances V GS(th) = f(T j); V GS = V DS C = f(V DS); V GS = 0 V; f = 1 MHz parameter: I D 2.25 2 Ciss C [pF] 104 -V GS(th) [V] 1.75 -4100µA Coss 103 1.5 -410µA 1.25 102 Crss 1 101 0.75 -60 -20 20 60 100 140 0 180 5 10 15 20 25 30 35 40 -V DS [V] T j [°C] 11 Typical forward diode characteristicis 12 Drain-source breakdown voltage IF = f(VSD) V BR(DSS) = f(T j); I D = -1mA parameter: T j 103 45 44 43 42 102 -V BR(DSS) [V] -I F [A] 175 °C 25 °C 101 41 40 39 38 37 36 100 35 0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 -V SD [V] Rev. 1.3 -60 -20 20 60 100 140 180 T j [°C] page 6 2011-04-27 Final Data Sheet 13 Typ. gate charge IPB180P04P4L-02 14 Gate charge waveforms V GS = f(Q gate); I D = -180A pulsed parameter: V DD 12 V GS -8V 10 Qg -32V -V GS [V] 8 6 4 2 Q gate Q gs Q gd 0 0 50 100 150 200 Q gate [nC] Rev. 1.3 page 7 2011-04-27 Final Data Sheet IPB180P04P4L-02 Published by Infineon Technologies AG 81726 Munich, Germany © Infineon Technologies AG 2011 All Rights Reserved. Legal Disclaimer The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics. With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation, warranties of non-infringement of intellectual property rights of any third party. Information For further information on technology, delivery terms and conditions and prices, please contact the nearest Infineon Technologies Office (www.infineon.com). Warnings Due to technical requirements, components may contain dangerous substances. For information on the types in question, please contact the nearest Infineon Technologies Office. Infineon Technologies components may be used in life-support devices or systems only with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. Rev. 1.3 page 8 2011-04-27 Final Data Sheet IPB180P04P4L-02 Revision History Version Rev. 1.3 Date Changes 1.1 02.09.2009 RDS(on)@4.5V: Id changed to 135A 1.1 02.09.2009 VGS(th): ID changed to 410uA 1.2 07.10.2009 RDS(on)@4.5V: ID changed to 80A 1.2 07.10.2009 RDS(on)@10V: ID changed to 80A 1.2 07.10.2009 VSD: ID changed to 80A 1.3 27.04.2011 Final Data Sheet page 9 2011-04-27