IPB60R125CPATMA1

IPB60R125CP CoolMOSTM Power Transistor Product Summary Features V DS @ Tj,max • Lowest figure-of-merit R ONxQg 650 0.125 Ω R DS(on),max • Ultra low gate charge V 53 Q g,typ nC • Extreme dv/dt rated • High peak current capability • Qualified according to JEDEC1) for target applications PG-TO263 • Pb-free lead plating; RoHS compliant CoolMOS CP is specially designed for: • Hard switching topologies, for Server and Telecom Type Package IPB60R125CP Ordering Code PG-TO263 Marking SP000088488 6R125P Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Symbol Conditions Continuous drain current ID Value T C=25 °C 25 T C=100 °C 16 Pulsed drain current2) I D,pulse T C=25 °C 82 Avalanche energy, single pulse E AS I D=11 A, V DD=50 V 708 Avalanche energy, repetitive t AR2),3) E AR I D=11 A, V DD=50 V 1.2 Avalanche current, repetitive t AR2),3) I AR MOSFET dv /dt ruggedness dv /dt Gate source voltage V GS Power dissipation P tot Operating and storage temperature T j, T stg Unit A mJ 11 A V DS=0...480 V 50 V/ns static ±20 V AC (f >1 Hz) ±30 T C=25 °C 208 W -55 ... 150 °C Rev. 1.0 page 1 2007-02-06 Rev. 1.1 Page 1 2018-03-28 IPB60R125CP Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Symbol Conditions Continuous diode forward current IS Value Unit 16 A T C=25 °C Diode pulse current 2) I S,pulse 82 Reverse diode dv /dt 4) dv /dt 15 V/ns Parameter Symbol Conditions Values Unit min. typ. max. - - 0.6 SMD version, device on PCB, minimal footprint - - 62 SMD version, device on PCB, 6 cm2 cooling area5) - 35 - reflow MSL1 - - 260 °C V Thermal characteristics Thermal resistance, junction - case R thJC R thJA Thermal resistance, junction ambient Soldering temperature, wave- & reflowsoldering allowed T sold K/W Electrical characteristics, at T j=25 °C, unless otherwise specified Static characteristics Drain-source breakdown voltage V (BR)DSS V GS=0 V, I D=250 µA 600 - - Gate threshold voltage V GS(th) V DS=V GS, I D=1.1 mA 2.5 3 3.5 Zero gate voltage drain current I DSS V DS=600 V, V GS=0 V, T j=25 °C - - 2 V DS=600 V, V GS=0 V, T j=150 °C - 20 - µA Gate-source leakage current I GSS V GS=20 V, V DS=0 V - - 100 nA Drain-source on-state resistance R DS(on) V GS=10 V, I D=16 A, T j=25 °C - 0.11 0.125 Ω V GS=10 V, I D=16 A, T j=150 °C - 0.30 - f =1 MHz, open drain - 2.1 - Gate resistance RG Ω Rev. 1.0 page 2 2007-02-06 Rev. 1.1 Page 2 2018-03-28 IPB60R125CP Parameter Values Symbol Conditions Unit min. typ. max. - 2500 - - 120 - - 110 - - 300 - - 15 - - 5 - - 50 - Dynamic characteristics Input capacitance C iss Output capacitance C oss Effective output capacitance, energy related6) Effective output capacitance, time related7) C o(er) C o(tr) V GS=0 V, V DS=100 V, f =1 MHz V GS=0 V, V DS=0 V to 480 V pF Turn-on delay time t d(on) Rise time tr Turn-off delay time t d(off) Fall time tf - 5 - Gate to source charge Q gs - 12 - Gate to drain charge Q gd - 18 - Gate charge total Qg - 53 70 Gate plateau voltage V plateau - 5.0 - V - 0.9 1.2 V - 430 - ns - 9 - µC - 42 - A V DD=400 V, V GS=10 V, I D=16 A, R G=3.3 Ω ns Gate Charge Characteristics V DD=400 V, I D=16 A, V GS=0 to 10 V nC Reverse Diode Diode forward voltage V SD Reverse recovery time t rr Reverse recovery charge Q rr Peak reverse recovery current I rrm V GS=0 V, I F=16 A, T j=25 °C V R=400 V, I F=I S, di F/dt =100 A/µs 1) J-STD20 and JESD22 2) Pulse width t p limited by T j,max 3) Repetitive avalanche causes additional power losses that can be calculated as P AV=E AR*f. 4) ISD=ID, di/dt