IPD06P002NATMA1

IPD06P002N MOSFET OptiMOSTMPowerTransistor,-60V D-PAK Features •P-Channel •Verylowon-resistanceRDS(on) •100%avalanchetested •NormalLevel •Enhancementmode •Pb-freeleadplating;RoHScompliant •Halogen-freeaccordingtoIEC61249-2-21 ProductValidation: Qualifiedforindustrialapplicationsaccordingtotherelevanttestsof JEDEC47/20/22 tab 1 3 Drain tab Table1KeyPerformanceParameters Parameter Value Unit VDS -60 V RDS(on),max 38 mΩ ID -35 A Gate Pin 1 Source Pin 3 Type/OrderingCode Package Marking RelatedLinks IPD06P002N PG-TO 252-3 06P002N - Final Data Sheet 1 Rev.2.0,2018-05-09 OptiMOSTMPowerTransistor,-60V IPD06P002N TableofContents Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Thermal characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Electrical characteristics diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5 Package Outlines . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 Revision History . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 Trademarks . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 Disclaimer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 Final Data Sheet 2 Rev.2.0,2018-05-09 OptiMOSTMPowerTransistor,-60V IPD06P002N 1Maximumratings atTC=25°C,unlessotherwisespecified Table2Maximumratings Parameter Symbol Continuous drain current Values Unit Note/TestCondition -35 -28 A VGS=-10V,TC=25°C VGS=-10V,TC=100°C - -140 A TC=25°C - - 559 mJ ID=-35A,RGS=25Ω VGS -20 - 20 V - Power dissipation Ptot - - 125 W TC=25°C Operating and storage temperature Tj,Tstg -55 - 175 °C IEC climatic category; DIN IEC 68-1: 55/175/56 Unit Note/TestCondition Min. Typ. Max. ID - - ID,pulse - Avalanche energy, single pulse EAS Gate source voltage Pulsed drain current1) 2) 2Thermalcharacteristics Table3Thermalcharacteristics Parameter Symbol Thermal resistance, junction - case, bottom Device on PCB, 6 cm² cooling area3) Values Min. Typ. Max. RthJC - - 1.2 °C/W - RthJA - - 75 °C/W - 3Electricalcharacteristics atTj=25°C,unlessotherwisespecified Table4Staticcharacteristics Parameter Symbol Drain-source breakdown voltage Values Unit Note/TestCondition - V VGS=0V,ID=-1mA -3 -4 V VDS=VGS,ID=-1700µA - -0.1 -10 1 -100 µA VDS=-60V,VGS=0V,Tj=25°C VDS=-60V,VGS=0V,Tj=125°C IGSS - -10 -100 nA VGS=-20V,VDS=0V Drain-source on-state resistance RDS(on) - 32 38 mΩ VGS=-10V,ID=-35A Gate resistance RG - 5 - Ω - Transconductance gfs - 33 - S |VDS|≥2|ID|RDS(on)max,ID=-35A Min. Typ. Max. V(BR)DSS -60 - Gate threshold voltage VGS(th) -2.1 Zero gate voltage drain current IDSS Gate-source leakage current 1) See Diagram 3 for more detailed information See Diagram 13 for more detailed information 3) Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm2 (one layer, 70 µm thick) copper area for drain connection. PCB is vertical in still air. 2) Final Data Sheet 3 Rev.2.0,2018-05-09 OptiMOSTMPowerTransistor,-60V IPD06P002N Table5Dynamiccharacteristics Parameter Symbol Input capacitance Values Unit Note/TestCondition - pF VGS=0V,VDS=-30V,f=1MHz 360 - pF VGS=0V,VDS=-30V,f=1MHz - 83 - pF VGS=0V,VDS=-30V,f=1MHz td(on) - 16 - ns VDD=-30V,VGS=-10V,ID=-17.5A, RG,ext=1.6Ω Rise time tr - 19 - ns VDD=-30V,VGS=-10V,ID=-17.5A, RG,ext=1.6Ω Turn-off delay time td(off) - 47 - ns VDD=-30V,VGS=-10V,ID=-17.5A, RG,ext=1.6Ω Fall time tf - 19 - ns VDD=-30V,VGS=-10V,ID=-17.5A, RG,ext=1.6Ω Unit Note/TestCondition Min. Typ. Max. Ciss - 2500 Output capacitance Coss - Reverse transfer capacitance Crss Turn-on delay time Table6Gatechargecharacteristics1) Parameter Symbol Gate to source charge Values Min. Typ. Max. Qgs - -14 - nC VDD=-30V,ID=-35A,VGS=0to-10V Gate charge at threshold Qg(th) - -8 - nC VDD=-30V,ID=-35A,VGS=0to-10V Gate to drain charge Qgd - -24 - nC VDD=-30V,ID=-35A,VGS=0to-10V Switching charge Qsw - -30 - nC VDD=-30V,ID=-35A,VGS=0to-10V Gate charge total Qg - -63 - nC VDD=-30V,ID=-35A,VGS=0to-10V Gate plateau voltage Vplateau - -5.5 - V VDD=-30V,ID=-35A,VGS=0to-10V Output charge Qoss - -28 - nC VDD=-30V,VGS=0V Unit Note/TestCondition Table7Reversediode Parameter Symbol Diode continuous forward current Values Min. Typ. Max. IS - - -35 A TC=25°C Diode pulse current IS,pulse - - -140 A TC=25°C Diode forward voltage VSD - -0.9 -1.2 V VGS=0V,IF=-35A,Tj=25°C Reverse recovery time trr - 63 - ns VR=-30V,IF=-37A,diF/dt=-100A/µs Reverse recovery charge Qrr - 192 - nC VR=-30V,IF=-37A,diF/dt=-100A/µs 1) See diagram Gate charge waveforms for gate charge parameter definition Final Data Sheet 4 Rev.2.0,2018-05-09 OptiMOSTMPowerTransistor,-60V IPD06P002N 4Electricalcharacteristicsdiagrams Diagram1:Powerdissipation Diagram2:Draincurrent 140 40 35 120 30 100 -ID[A] Ptot[W] 25 80 20 60 15 40 10 20 0 5 0 25 50 75 100 125 150 175 0 200 0 25 50 75 TC[°C] 100 125 150 Ptot=f(TC) ID=f(TC);|VGS|≥10V Diagram3:Safeoperatingarea Diagram4:Max.transientthermalimpedance 3 200 101 10 1 µs 102 100 µs 100 1 ms 101 0.5 ZthJA[K/W] -ID[A] 175 TC[°C] 10 ms DC 0.2 0.1 10-1 0.05 100 0.02 0.01 single pulse 10-1 10-1 100 101 102 10-2 10-5 10-4 -VDS[V] 10-2 10-1 100 tp[s] ID=f(VDS);TC=25°C;D=0;parameter:tp Final Data Sheet 10-3 ZthJC=f(tp);parameter:D=tp/T 5 Rev.2.0,2018-05-09 OptiMOSTMPowerTransistor,-60V IPD06P002N Diagram5:Typ.outputcharacteristics Diagram6:Typ.drain-sourceonresistance 100 80 -10 V -8 V -7 V 80 68 -6 V 60 -ID[A] -6 V 40 RDS(on)[mΩ] -5 V -4.5 V 56 -7 V 44 -8 V -10 V -5 V 20 32 -4.5 V 0 0 1 2 3 4 20 5 0 10 20 -VDS[V] 30 40 50 60 70 -ID[A] ID=f(VDS),Tj=25°C;parameter:VGS RDS(on)=f(ID),Tj=25°C;parameter:VGS Diagram7:Typ.transfercharacteristics Diagram8:Typ.drain-sourceonresistance 50 100 40 80 175 °C -ID[A] RDS(on)[mΩ] 30 20 60 40 25 °C 10 20 175 °C 25 °C 0 2 3 4 5 6 7 -VGS[V] 6 7 8 9 10 -VGS[V] ID=f(VGS),|VDS|>2|ID|RDS(on)max;parameter:Tj Final Data Sheet 0 RDS(on)=f(VGS),ID=-35A;parameter:Tj 6 Rev.2.0,2018-05-09 OptiMOSTMPowerTransistor,-60V IPD06P002N Diagram10:Typ.gatethresholdvoltage 2.4 3.50 2.0 3.25 1.6 3.00 -VGS(th)[V] RDS(on)(normalizedto25°C) Diagram9:Normalizeddrain-sourceonresistance 1.2 2.75 0.8 2.50 0.4 2.25 -17000 µA -1700 µA 0.0 -80 -40 0 40 80 120 160 2.00 -80 200 -40 0 Tj[°C] 40 80 120 160 RDS(on)=f(Tj),ID=-35A,VGS=-10V VGS(th=f(Tj),VGS=VDS;parameter:ID Diagram11:Typ.capacitances Diagram12:Forwardcharacteristicsofreversediode 4 103 10 25 °C 25 °C, max 175 °C 175 °C, max Ciss 102 C[pF] 103 102 -IF[A] Coss 101 200 Tj[°C] 101 Crss 0 10 20 30 40 50 60 100 0.25 0.50 0.75 -VDS[V] 1.25 1.50 1.75 2.00 -VSD[V] C=f(VDS);VGS=0V;f=1MHz Final Data Sheet 1.00 IF=f(VSD);parameter:Tj 7 Rev.2.0,2018-05-09 OptiMOSTMPowerTransistor,-60V IPD06P002N Diagram13:Avalanchecharacteristics Diagram14:Typ.gatecharge 2 10 10 -12 V -30 V -48 V 8 25 °C 101 100 °C -VGS[V] -IAV[A] 6 4 2 150 °C 100 100 101 102 103 tAV[µs] 0 0 10 20 30 40 50 60 70 -Qgate[nC] IAS=f(tAV);RGS=25Ω;parameter:Tj,start VGS=f(Qgate),ID=-35Apulsed,Tj=25°C;parameter:VDD Diagram15:Drain-sourcebreakdownvoltage Diagram Gate charge waveforms 71 69 67 -VBR(DSS)[V] 65 63 61 59 57 55 -80 -40 0 40 80 120 160 200 Tj[°C] VBR(DSS)=f(Tj);ID=-250µA Final Data Sheet 8 Rev.2.0,2018-05-09 OptiMOSTMPowerTransistor,-60V IPD06P002N 5PackageOutlines DIM A A1 b b2 b3 c c2 D D1 E E1 e e1 N H L L3 L4 MILLIMETERS MIN 2.16 0.00 0.64 0.65 4,95 0.46 0.40 5.97 5.02 6.35 4.32 MAX 2.41 0.15 0.89 1.15 5.50 0.61 0.98 6.22 5.84 6.73 5.21 2.29 (BSC) 4.57 (BSC) MIN 0.085 0.000 0.025 0.026 0.195 0.018 0.016 0.235 0.198 0.250 0.185 3 9.40 1.18 0.89 0.51 10.48 1.78 1.27 1.02 DOCUMENT NO. Z8B00003328 INCHES 0.370 0.046 0.035 0.020 MAX 0.095 0.006 0.035 0.045 0.217 0.024 0.039 0.245 0.230 0.265 0.205 0.090 (BSC) 0.180 (BSC) 3 0.413 0.070 0.050 0.040 SCALE 0 2.5 0 2.5 5mm EUROPEAN PROJECTION ISSUE DATE 05-02-2016 REVISION 06 Figure1OutlinePG-TO252-3,dimensionsinmm/inches Final Data Sheet 9 Rev.2.0,2018-05-09 OptiMOSTMPowerTransistor,-60V IPD06P002N RevisionHistory IPD06P002N Revision:2018-05-09,Rev.2.0 Previous Revision Revision Date Subjects (major changes since last revision) 2.0 2018-05-09 Release of final version TrademarksofInfineonTechnologiesAG AURIX™,C166™,CanPAK™,CIPOS™,CoolGaN™,CoolMOS™,CoolSET™,CoolSiC™,CORECONTROL™,CROSSAVE™,DAVE™,DI-POL™,DrBlade™, EasyPIM™,EconoBRIDGE™,EconoDUAL™,EconoPACK™,EconoPIM™,EiceDRIVER™,eupec™,FCOS™,HITFET™,HybridPACK™,Infineon™, ISOFACE™,IsoPACK™,i-Wafer™,MIPAQ™,ModSTACK™,my-d™,NovalithIC™,OmniTune™,OPTIGA™,OptiMOS™,ORIGA™,POWERCODE™, PRIMARION™,PrimePACK™,PrimeSTACK™,PROFET™,PRO-SIL™,RASIC™,REAL3™,ReverSave™,SatRIC™,SIEGET™,SIPMOS™,SmartLEWIS™, SOLIDFLASH™,SPOC™,TEMPFET™,thinQ™,TRENCHSTOP™,TriCore™. TrademarksupdatedAugust2015 OtherTrademarks Allreferencedproductorservicenamesandtrademarksarethepropertyoftheirrespectiveowners. WeListentoYourComments Anyinformationwithinthisdocumentthatyoufeeliswrong,unclearormissingatall?Yourfeedbackwillhelpustocontinuously improvethequalityofthisdocument.Pleasesendyourproposal(includingareferencetothisdocument)to: erratum@infineon.com Publishedby InfineonTechnologiesAG 81726München,Germany ©2018InfineonTechnologiesAG AllRightsReserved. LegalDisclaimer Theinformationgiveninthisdocumentshallinnoeventberegardedasaguaranteeofconditionsorcharacteristics (“Beschaffenheitsgarantie”). Withrespecttoanyexamples,hintsoranytypicalvaluesstatedhereinand/oranyinformationregardingtheapplicationofthe product,InfineonTechnologiesherebydisclaimsanyandallwarrantiesandliabilitiesofanykind,includingwithoutlimitation warrantiesofnon-infringementofintellectualpropertyrightsofanythirdparty. Inaddition,anyinformationgiveninthisdocumentissubjecttocustomer’scompliancewithitsobligationsstatedinthis documentandanyapplicablelegalrequirements,normsandstandardsconcerningcustomer’sproductsandanyuseofthe productofInfineonTechnologiesincustomer’sapplications. Thedatacontainedinthisdocumentisexclusivelyintendedfortechnicallytrainedstaff.Itistheresponsibilityofcustomer’s technicaldepartmentstoevaluatethesuitabilityoftheproductfortheintendedapplicationandthecompletenessoftheproduct informationgiveninthisdocumentwithrespecttosuchapplication. Information Forfurtherinformationontechnology,deliverytermsandconditionsandpricespleasecontactyournearestInfineon TechnologiesOffice(www.infineon.com). Warnings Duetotechnicalrequirements,componentsmaycontaindangeroussubstances.Forinformationonthetypesinquestion, pleasecontactthenearestInfineonTechnologiesOffice. TheInfineonTechnologiescomponentdescribedinthisDataSheetmaybeusedinlife-supportdevicesorsystemsand/or automotive,aviationandaerospaceapplicationsorsystemsonlywiththeexpresswrittenapprovalofInfineonTechnologies,ifa failureofsuchcomponentscanreasonablybeexpectedtocausethefailureofthatlife-support,automotive,aviationand aerospacedeviceorsystemortoaffectthesafetyoreffectivenessofthatdeviceorsystem.Lifesupportdevicesorsystemsare intendedtobeimplantedinthehumanbodyortosupportand/ormaintainandsustainand/orprotecthumanlife.Iftheyfail,itis reasonabletoassumethatthehealthoftheuserorotherpersonsmaybeendangered. Final Data Sheet 10 Rev.2.0,2018-05-09