IPW65R115CFD7A
MOSFET
650VCoolMOSªCFD7ASJPowerDevice
PG-TO247-3
650VCoolMOS™CFD7AisInfineon'slatestgenerationofmarketleading
automotivequalifiedhighvoltageCoolMOS™MOSFETs.Inadditiontothe
well-knownattributesofhighqualityandreliabilityrequiredbythe
automotiveindustry,thenewCoolMOS™CFD7Aseriesprovidesforan
integratedfastbodydiodeandcanbeusedforPFCandresonant
switchingtopologiesliketheZVSphase-shiftfull-bridgeandLLC.
Tab
1
2
3
Features
•Latest650Vautomotivequalifiedtechnologywithintegratedfastbody
diodeonthemarketfeaturingultralowQrr
•LowestFOMRDS(on)*QgandRDS(on)*Eoss
•100%avalanchetested
•Best-in-classRDS(on)inSMDandTHDpackages
Drain
Pin 2, Tab
Benefits
*1
Gate
Pin 1
*2
•Optimizedforhigherbatteryvoltagesupto475Vthankstofurther
improvedrobustness
•Lowerswitchinglossesenablinghigherswitchingfrequencies
•Highqualityandreliability
•Increasedefficiencyinlightloadandfullloadconditions
*1: Internal body diode
*2: Integrated ESD diode
Source
Pin 3
Potentialapplications
SuitableforPFCandDC-DCstagesfor:
•UnidirectionalandbidirectionalDC-DCconverters,
•On-BoardbatteryChargers
Productvalidation
QualifiedaccordingtoAECQ101
Pleasenote:Forproductionpartapprovalprocess(PPAP)releasewe
proposetoshareapplicationrelatedinformationduringanearlydesign
phasetoavoiddelaysinPPAPrelease.PleasecontactInfineonsales
office.
Table1KeyPerformanceParameters
Parameter
Value
Unit
VDS
650
V
RDS(on),max
115
mΩ
Qg,typ
41
nC
ID,pulse
82
A
Eoss @ 400V
5.6
µJ
Body diode diF/dt
1300
A/µs
Type/OrderingCode
Package
IPW65R115CFD7A
PG-TO247-3
Final Data Sheet
1
Marking
RelatedLinks
65A115F7
see Appendix A
Rev.2.2,2021-11-22
650VCoolMOSªCFD7ASJPowerDevice
IPW65R115CFD7A
TableofContents
Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
Maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
Thermal characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5
Electrical characteristics diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7
Test Circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
Package Outlines . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
Appendix A . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
Revision History . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14
Trademarks . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14
Disclaimer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14
Final Data Sheet
2
Rev.2.2,2021-11-22
650VCoolMOSªCFD7ASJPowerDevice
IPW65R115CFD7A
1Maximumratings
atTj=25°C,unlessotherwisespecified
Table2Maximumratings
Parameter
Symbol
Continuous drain current1)
Values
Unit
Note/TestCondition
21
13
A
TC=25°C
TC=100°C
-
82
A
TC=25°C
-
-
97
mJ
ID=4.7A; VDD=50V; see table 10
IAS
-
-
4.7
A
-
MOSFET dv/dt ruggedness
dv/dt
-
-
120
V/ns
VDS=0...400V
Gate source voltage (static)
VGS
-20
-
20
V
static;
Gate source voltage (dynamic)
VGS,pulse
-30
-
30
V
frepetition