IRF7379QTRPBF

PD - 96111B IRF7379QPbF HEXFET® Power MOSFET l l l l l l l Advanced Process Technology Ultra Low On-Resistance Dual N and P Channel MOSFET Surface Mount Available in Tape & Reel 150°C Operating Temperature Lead-Free S2 1 8 D2 G2 2 7 D2 S1 3 6 D1 G1 4 5 D1 VDSS N-Ch P-Ch 30V -30V RDS(on) 0.045Ω 0.090Ω Description These HEXFET® Power MOSFET's in a Dual SO8 package utilize the lastest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of these HEXFET Power MOSFET's are a 150°C junction operating temperature, fast switching speed and improved repetitive avalanche rating. These benefits combine to make this design an extremely efficient and reliable device for use in a wide variety of applications. The efficient SO-8 package provides enhanced thermal characteristics and dual MOSFET die capability making it ideal in a variety of power applications. This dual, surface mount SO-8 can dramatically reduce board space and is also available in Tape & Reel. SO-8 Absolute Maximum Ratings Parameter VSD ID @ TA = 25°C ID @ TA = 70°C I DM PD @TA = 25°C VGS dv/dt TJ, TSTG Drain-to-Source Voltage Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current  Power Dissipation Linear Derating Factor Gate-to-Source Voltage Peak Diode Recovery dv/dt ‚ Junction and Storage Temperature Range Max. N-Channel P-Channel 30 5.8 4.6 46 -30 -4.3 -3.4 -34 2.5 0.02 ± 20 5.0 -5.0 -55 to + 150 Units A W W/°C V V/ns °C Thermal Resistance Ratings Parameter RθJA www.irf.com Maximum Junction-to-Ambient„ Max. Units 50 °C/W 1 08/09/10 IRF7379QPbF Electrical Characteristics @ TJ = 25°C (unless otherwise specified) Parameter V(BR)DSS Drain-to-Source Breakdown Voltage ∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient RDS(ON) Static Drain-to-Source On-Resistance VGS(th) Gate Threshold Voltage gfs Forward Transconductance I DSS Drain-to-Source Leakage Current IGSS Gate-to-Source Forward Leakage Qg Total Gate Charge Qgs Gate-to-Source Charge Qgd td(on) Gate-to-Drain ("Miller") Charge Turn-On Delay Time tr Rise Time td(off) Turn-Off Delay Time tf Fall Time LD LS Internal Drain Inductace Internal Source Inductance Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Min. Typ. Max. N-Ch 30 — — P-Ch -30 — — N-Ch — 0.032 — P-Ch — -0.037 — — 0.038 0.045 N-Ch — 0.055 0.075 — 0.070 0.090 P-Ch — 0.130 0.180 N-Ch 1.0 — — P-Ch -1.0 — — N-Ch 5.2 — — P-Ch 2.5 — — N-Ch — — 1.0 P-Ch — — -1.0 N-Ch — — 25 P-Ch — — -25 N-P –– — ±100 N-Ch — — 25 P-Ch — — 25 N-Ch — — 2.9 P-Ch — — 2.9 N-Ch — — 7.9 P-Ch — — 9.0 N-Ch — 6.8 — P-Ch — 11 — N-Ch — 21 — P-Ch — 17 — N-Ch — 22 — P-Ch — 25 — N-Ch — 7.7 — P-Ch — 18 — N-P — 4.0 — N-P — 6.0 — N-Ch — 520 — P-Ch — 440 — N-Ch — 180 — P-Ch — 200 — N-Ch — 72 — P-Ch — 93 — Units V V/°C Ω V S µA nC ns nH pF Conditions VGS = 0V, ID = 250µA VGS = 0V, I D = -250µA Reference to 25°C, ID = 1mA Reference to 25°C, I D = -1mA VGS = 10V, ID = 5.8A ƒ VGS = 4.5V, ID = 4.9A ƒ VGS = -10V, ID =- 4.3A ƒ VGS = -4.5V, ID =- 3.7A ƒ VDS = VGS, ID = 250µA VDS = VGS, I D = -250µA VDS = 15V, ID = 2.4A ƒ ƒ VDS = -24V, ID = -1.8A VDS = 24 V, VGS = 0V VDS = -24V, VGS = 0V VDS = 24 V, VGS = 0V, TJ = 125°C VDS = -24V, VGS = 0V, TJ = 125°C VGS = ± 20V N-Channel ID = 2.4A, VDS = 24V, VGS = 10V P-Channel ID = -1.8A, VDS = -24V, VGS = -10V N-Channel VDD = 15V, I D = 2.4A, RG = 6.0Ω, RD = 6.2Ω P-Channel VDD = -15V, ID = -1.8A, RG = 6.0Ω, RD = 8.2Ω ƒ ƒ Between lead, 6mm (0.25in.) from package and center of die contact N-Channel VGS = 0V, V DS = 25V, ƒ = 1.0MHz P-Channel VGS = 0V, V DS = -25V, ƒ = 1.0MHz ƒ Source-Drain Ratings and Characteristics Parameter IS Continuous Source Current (Body Diode) I SM Pulsed Source Current (Body Diode)  VSD Diode Forward Voltage trr Reverse Recovery Time Qrr Reverse Recovery Charge N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch Min. Typ. Max. Units Conditions — — 3.1 — — -3.1 A — — 46 — — -34 — — 1.0 TJ = 25°C, IS = 1.8A, VGS = 0V ƒ V — — -1.0 TJ = 25°C, IS = -1.8A, VGS = 0V ƒ — 47 71 N-Channel ns — 53 80 TJ = 25°C, IF = 2.4A, di/dt = 100A/µs — 56 84 P-Channel ƒ nC TJ = 25°C, IF = -1.8A, di/dt = -100A/µs — 66 99 Notes:  Repetitive rating; pulse width limited by ƒ Pulse width ≤ 300µs; duty cycle ≤ 2%. ‚ N-Channel ISD ≤ 2.4A, di/dt ≤ 73A/µs, VDD ≤ V(BR)DSS, TJ ≤ 150°C „ Surface mounted on FR-4 board, t ≤ 10sec. max. junction temperature. ( See fig. 10 ) P-Channel ISD ≤ -1.8A, di/dt ≤ 90A/µs, VDD ≤ V(BR)DSS, TJ ≤ 150°C 2 www.irf.com IRF7379QPbF N-Channel 1000 1000 VGS 15V 10V 8.0V 7.0V 6.0V 5.5V 5.0V BOTTOM 4.5V 100 4.5V 10 20µs PULSE WIDTH TJ = 25°C 1 0.1 VGS 15V 10V 8.0V 7.0V 6.0V 5.5V 5.0V BOTTOM 4.5V TOP I , Drain-to-Source Current (A) D I , Drain-to-Source Current (A) D TOP 1 10 100 A 4.5V 10 20µs PULSE WIDTH TJ = 150°C 1 0.1 100 VDS , Drain-to-Source Voltage (V) 1 10 100 A VDS , Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics 100 ISD , Reverse Drain Current (A) I D , Drain-to-Source Current (A) 100 TJ = 25°C TJ = 150°C VDS = 15V 20µs PULSE WIDTH 10 4 5 6 7 8 9 VGS , Gate-to-Source Voltage (V) Fig 3. Typical Transfer Characteristics www.irf.com 10 A 10 TJ = 150°C TJ = 25°C 1 VGS = 0V 0.1 0.0 0.5 1.0 1.5 2.0 A 2.5 VSD , Source-to-Drain Voltage (V) Fig 4. Typical Source-Drain Diode Forward Voltage 3 IRF7379QPbF I D = 4.0A 1.5 1.0 0.5 VGS = 10V 0.0 -60 -40 -20 0 20 40 60 80 A 100 120 140 160 R DS (on), Drain-to-Source On Resistance ( Ω ) R DS(on) , Drain-to-Source On Resistance (Normalized) 2.0 N-Channel 0.20 0.16 0.12 VGS = 4.5V 0.08 VGS = 10V 0.04 0.00 2 4 8 10 Fig 6. Typical On-Resistance Vs. Drain Current Fig 5. Normalized On-Resistance Vs. Temperature R DS (on), Drain-to-Source On Resistance ( Ω ) 6 I D , Drain Current (A) TJ , Junction Temperature (°C) 0.08 0.07 0.06 0.05 ID = 5.8A 0.04 0.03 0 4 8 12 16 VGS , Gate-to-Source Voltage (V) Fig 7. Typical On-Resistance Vs. Gate Voltage 4 www.irf.com IRF7379QPbF N-Channel 1000 V GS , Gate-to-Source Voltage (V) 800 C, Capacitance (pF) 20 V GS = 0V, f = 1MHz C iss = Cgs + C gd , Cds SHORTED C rss = C gd C oss = C ds + C gd I D = 2.4A VDS = 24V 16 Ciss 600 12 C oss 400 Crss 200 0 1 10 100 A 8 4 FOR TEST CIRCUIT SEE FIGURE 11 0 0 VDS , Drain-to-Source Voltage (V) 5 10 15 20 25 Q G , Total Gate Charge (nC) Fig 8. Typical Capacitance Vs. Drain-to-Source Voltage Fig 9. Typical Gate Charge Vs. Gate-to-Source Voltage Thermal Response (Z thJA ) 100 D = 0.50 10 0.20 0.10 0.05 1 PDM 0.02 t1 0.01 t2 Notes: 1. Duty factor D = t 1 / t 2 2. Peak T J = P DM x Z thJA + TA SINGLE PULSE (THERMAL RESPONSE) 0.1 0.00001 0.0001 0.001 0.01 0.1 1 10 100 t1 , Rectangular Pulse Duration (sec) Fig 10. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient www.irf.com 5 A IRF7379QPbF 100 P-Channel 100 VGS - 15V - 10V - 8.0V - 7.0V - 6.0V - 5.5V - 5.0V BOTTOM - 4.5V 10 -4.5V 10 20µs PULSE WIDTH TJ = 25°C A 1 0.1 1 10 20µs PULSE WIDTH TJ = 150°C 1 10 A 100 -VDS , Drain-to-Source Voltage (V) Fig 11. Typical Output Characteristics Fig 12. Typical Output Characteristics 100 100 -ISD , Reverse Drain Current (A) -I D , Drain-to-Source Current (A) -4.5V 1 0.1 100 -VDS , Drain-to-Source Voltage (V) TJ = 25°C TJ = 150°C 10 10 TJ = 150°C TJ = 25°C 1 VDS = -15V 20µs PULSE WIDTH 1 4 5 6 7 8 9 10 -VGS , Gate-to-Source Voltage (V) Fig 13. Typical Transfer Characteristics 6 VGS - 15V - 10V - 8.0V - 7.0V - 6.0V - 5.5V - 5.0V BOTTOM - 4.5V TOP -I D , Drain-to-Source Current (A) -ID , Drain-to-Source Current (A) TOP A VGS = 0V 0.1 0.0 0.3 0.6 0.9 1.2 A 1.5 -VSD , Source-to-Drain Voltage (V) Fig 14. Typical Source-Drain Diode Forward Voltage www.irf.com IRF7379QPbF 2.0 R DS (on), Drain-to-Source On Resistance ( Ω ) R DS(on) , Drain-to-Source On Resistance (Normalized) P-Channel I D = -3.0A 1.5 1.0 0.5 VGS = -10V 0.0 -60 -40 -20 0 20 40 60 80 A 100 120 140 160 0.50 0.40 0.30 VGS = -4.5V 0.20 VGS = -10V 0.10 0.00 0 2 6 8 10 12 14 Fig 16. Typical On-Resistance Vs. Drain Current Fig 15. Normalized On-Resistance Vs. Temperature R DS (on), Drain-to-Source On Resistance ( Ω ) 4 -ID , Drain Current (A) TJ , Junction Temperature (°C) 0.16 0.14 0.12 0.10 ID = -4.3A 0.08 0.06 0 4 8 12 16 -VGS , Gate-to-Source Voltage (V) Fig 17. Typical On-Resistance Vs. Gate Voltage www.irf.com 7 IRF7379QPbF 1000 20 600 -VGS , Gate-to-Source Voltage (V) V GS = 0V, f = 1MHz C iss = Cgs + C gd , Cds SHORTED C rss = C gd C oss = C ds + C gd 800 C, Capacitance (pF) P-Channel Ciss Coss 400 Crss 200 0 1 10 - -V DS 100 A ID = -3.0A VDS = -24V 16 12 8 4 FOR TEST CIRCUIT SEE FIGURE 22 0 0 5 10 15 20 A 25 Q G , Total Gate Charge (nC) , Drain-to-Source Voltage (V) Fig 19. Typical Gate Charge Vs. Gate-to-Source Voltage Fig 18. Typical Capacitance Vs. Drain-to-Source Voltage Thermal Response (Z thJA ) 100 D = 0.50 10 0.20 0.10 0.05 1 PDM 0.02 t1 0.01 t2 Notes: 1. Duty factor D = t 1 / t 2 2. Peak T J = P DM x Z thJA + TA SINGLE PULSE (THERMAL RESPONSE) 0.1 0.00001 0.0001 0.001 0.01 0.1 1 10 100 t1 , Rectangular Pulse Duration (sec) Fig 20. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient 8 www.irf.com IRF7379QPbF SO-8 Package Outline Dimensions are shown in millimeters (inches) D 5 A 8 6 7 6 5 H 1 6X 2 3 0.25 [.010] 4 A e e1 A1 8X b 0.25 [.010] A MILLIMETERS MIN MAX MIN .0532 .0688 1.35 1.75 A1 .0040 0.25 A E INCHES DIM B MAX .0098 0.10 b .013 .020 0.33 0.51 c .0075 .0098 0.19 0.25 D .189 .1968 4.80 5.00 E .1497 .1574 3.80 4.00 e .050 BASIC 1.27 BASIC e1 .025 BASIC 0.635 B ASIC H .2284 .2440 5.80 6.20 K .0099 .0196 0.25 0.50 L .016 .050 0.40 1.27 y 0° 8° 0° 8° K x 45° C y 0.10 [.004] 8X L 8X c 7 C A B F OOTPRINT NOT ES : 1. DIMENS IONING & TOLERANCING PER ASME Y14.5M-1994. 8X 0.72 [.028] 2. CONT ROLLING DIMENS ION: MILLIMET ER 3. DIMENS IONS ARE SHOWN IN MILLIMETERS [INCHES]. 4. OUTLINE CONFORMS TO JEDEC OUTLINE MS -012AA. 5 DIMENS ION DOES NOT INCLUDE MOLD PROT RUSIONS . MOLD PROTRUS IONS NOT TO EXCEED 0.15 [.006]. 6 DIMENS ION DOES NOT INCLUDE MOLD PROT RUSIONS . MOLD PROTRUS IONS NOT TO EXCEED 0.25 [.010]. 6.46 [.255] 7 DIMENS ION IS T HE LENGT H OF LEAD FOR SOLDERING TO A S UBST RAT E. 3X 1.27 [.050] 8X 1.78 [.070] SO-8 Part Marking E XAMPLE : T HIS IS AN IRF 7101 (MOS F E T ) INT E RNAT IONAL RE CT IF IE R LOGO XXXX F 7101 DAT E CODE (YWW) P = DE S IGNAT E S LE AD-F RE E PRODU CT (OPT IONAL) Y = LAS T DIGIT OF T HE YE AR WW = WE E K A = AS S E MB LY S IT E CODE LOT CODE PART NU MBE R Notes: 1. For an Automotive Qualified version of this part please see http://www.irf.com/product-info/auto/ 2. For the most current drawing please refer to IR website at http://www.irf.com/package/ www.irf.com 9 IRF7379QPbF SO-8 Tape and Reel Dimensions are shown in millimeters (inches) TERMINAL NUMBER 1 12.3 ( .484 ) 11.7 ( .461 ) 8.1 ( .318 ) 7.9 ( .312 ) FEED DIRECTION NOTES: 1. CONTROLLING DIMENSION : MILLIMETER. 2. ALL DIMENSIONS ARE SHOWN IN MILLIMETERS(INCHES). 3. OUTLINE CONFORMS TO EIA-481 & EIA-541. 330.00 (12.992) MAX. 14.40 ( .566 ) 12.40 ( .488 ) NOTES : 1. CONTROLLING DIMENSION : MILLIMETER. 2. OUTLINE CONFORMS TO EIA-481 & EIA-541. Data and specifications subject to change without notice. This product has been designed and qualified for the Industrial market. Qualification Standards can be found on IR’s Web site. IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information.08/2010 10 www.irf.com