END OF LIFE
IRF7404QPbF
HEXFET® Power MOSFET
l
l
l
l
l
l
l
Advanced Process Technology
Ultra Low On-Resistance
P Channel MOSFET
Surface Mount
Available in Tape & Reel
150°C Operating Temperature
Lead-Free
A
D
S
1
8
S
2
7
D
S
3
6
D
G
4
5
D
VDSS = -20V
RDS(on) = 0.040Ω
Top View
Description
These HEXFET® Power MOSFET's in package utilize the
lastest processing techniques to achieve extremely low
on-resistance per silicon area. Additional features of these
HEXFET Power MOSFET's are a 150°C junction operating
temperature, fast switching speed and improved repetitive
avalanche rating. These benefits combine to make this
design an extremely efficient and reliable device for use in
a wide variety of applications.
The efficient SO-8 package provides enhanced thermal
characteristics making it ideal in a variety of power
applications. This surface mount SO-8 can dramatically
reduce board space and is also available in Tape & Reel.
IRF7404QPbF
Standard Pack
Package
Type
Form
Quantity
EOL
Notice
IRF7404QTRPbF
SO-8
Tape and Reel
4000
EOL 527
IRF7404QPbF
SO-8
Tube
95
EOL 529
Base part number Orderable part number
SO-8
Replacement Part Number
Please search the EOL part number on IR’s website for
guidance
Absolute Maximum Ratings
Parameter
ID @ TA = 25°C
ID @ TA = 25°C
ID @ TA = 70°C
IDM
PD @TA = 25°C
VGS
dv/dt
TJ, TSTG
Max.
10 Sec. Pulsed Drain Current, VGS @ -4.5V
Continuous Drain Current, VGS @ -4.5V
Continuous Drain Current, VGS @ -4.5V
Pulsed Drain Current
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Peak Diode Recovery dv/dt
Junction and Storage Temperature Range
Units
-7.7
-6.7
-5.4
-27
2.5
0.02
± 12
-5.0
-55 to + 150
A
W
W/°C
V
V/ns
°C
Thermal Resistance Ratings
Parameter
RθJA
www.irf.com
Maximum Junction-to-Ambient
Typ.
Max.
Units
50
°C/W
1
02/10/15
IRF7404QPbF
END OF LIFE
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
ΔV(BR)DSS/ΔTJ
Parameter
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
RDS(ON)
Static Drain-to-Source On-Resistance
VGS(th)
gfs
Gate Threshold Voltage
Forward Transconductance
IDSS
Drain-to-Source Leakage Current
V(BR)DSS
Min.
-20
-0.70
6.8
Typ. Max. Units
Conditions
V
V GS = 0V, ID = -250µA
-0.012 V/°C Reference to 25°C, ID = -1mA
0.040
V GS = -4.5V, ID = -3.2A
Ω
0.060
V GS = -2.7V, ID = -2.7A
V
V DS = VGS, ID = -250µA
S
V DS = -15V, ID = -3.2A
-1.0
V DS = -16V, VGS = 0V
µA
-25
V DS = -16V, VGS = 0V, TJ = 125°C
-100
V GS = -12V
nA
100
V GS = 12V
50
I D = -3.2A
5.5
nC V DS = -16V
21
V GS = -4.5V, See Fig. 6 and 12
14
V DD = -10V
32
I D = -3.2A
ns
100
R G = 6.0Ω
65
R D = 3.1Ω, See Fig. 10
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
LD
Internal Drain Inductance
2.5
LS
Internal Source Inductance
4.0
Ciss
Coss
Crss
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
1500
730
340
IGSS
D
nH
Between lead tip
and center of die contact
pF
V GS = 0V
V DS = -15V
= 1.0MHz, See Fig. 5
G
S
Source-Drain Ratings and Characteristics
IS
I SM
VSD
trr
Qrr
ton
Parameter
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode)
Diode Forward Voltage
Reverse Recovery Time
Reverse RecoveryCharge
Forward Turn-On Time
Min. Typ. Max. Units
-3.1
-27
69
71
-1.0
100
110
A
V
ns
µC
Conditions
D
MOSFET symbol
showing the
G
integral reverse
p-n junction diode.
S
TJ = 25°C, IS = -2.0A, VGS = 0V
TJ = 25°C, I F = -3.2A
di/dt = 100A/µs
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
Notes:
Repetitive rating; pulse width limited by
max. junction temperature. ( See fig. 11 )
ISD ≤ -3.2A, di/dt ≤ -65A/µs, VDD ≤ V(BR)DSS,
Pulse width ≤ 300µs; duty cycle ≤ 2%.
Surface mounted on FR-4 board, t ≤ 10sec.
TJ ≤ 150°C
2
www.irf.com
END OF LIFE
1000
IRF7404QPbF
1000
VGS
- 7.5V
- 5.0V
- 4.0V
- 3.5V
- 3.0V
- 2.5V
- 2.0V
BOTTOM - 1.5V
-ID , Drain-to-Source Current (A)
-I D , Drain-to-Source Current (A)
100
10
-1.5V
1
20μs PULSE WIDTH
TJ = 25°C
A
0.1
0.01
VGS
- 7.5V
- 5.0V
- 4.0V
- 3.5V
- 3.0V
- 2.5V
- 2.0V
BOTTOM - 1.5V
TOP
TOP
0.1
1
10
100
10
-1.5V
1
20μs PULSE WIDTH
TJ = 150°C
0.1
0.01
100
0.1
Fig 1. Typical Output Characteristics
2.0
R DS(on) , Drain-to-Source On Resistance
(Normalized)
-ID , Drain-to-Source Current (A)
TJ = 25°C
TJ = 150°C
10
VDS = -15V
20μs PULSE WIDTH
2.0
2.5
3.0
3.5
4.0
4.5
-VGS , Gate-to-Source Voltage (V)
Fig 3. Typical Transfer Characteristics
www.irf.com
A
100
Fig 2. Typical Output Characteristics
100
1.5
10
-VDS , Drain-to-Source Voltage (V)
-VDS , Drain-to-Source Voltage (V)
1
1
5.0
A
I D = -5.3A
1.5
1.0
0.5
VGS = -4.5V
0.0
-60
-40
-20
0
20
40
60
80
A
100 120 140 160
TJ , Junction Temperature (°C)
Fig 4. Normalized On-Resistance
Vs. Temperature
3
END OF LIFE
IRF7404QPbF
10
V GS = 0V,
f = 1MHz
C iss = Cgs + C gd , Cds SHORTED
C rss = C gd
C oss = C ds + C gd
-VGS , Gate-to-Source Voltage (V)
C, Capacitance (pF)
3000
Ciss
2000
Coss
1000
Crss
0
1
10
100
I D = -3.2A
VDS = -16V
8
6
4
2
FOR TEST CIRCUIT
SEE FIGURE 12
0
A
0
10
Fig 5. Typical Capacitance Vs.
Drain-to-Source Voltage
40
50
60
A
Fig 6. Typical Gate Charge Vs.
Gate-to-Source Voltage
100
100
OPERATION IN THIS AREA LIMITED
BY RDS(on)
TJ = 150°C
10
-IID , Drain Current (A)
-I SD , Reverse Drain Current (A)
30
Q G , Total Gate Charge (nC)
-VDS , Drain-to-Source Voltage (V)
TJ = 25°C
1
VGS = 0V
0.1
0.2
0.4
0.6
0.8
1.0
1.2
1.4
-V SD , Source-to-Drain Voltage (V)
Fig 7. Typical Source-Drain Diode
Forward Voltage
4
20
1.6
1ms
10
10ms
TA = 25 ° C
TJ = 150 ° C
Single Pulse
1
0.1
1
10
100
-VDS , Drain-to-Source Voltage (V)
Fig 8. Maximum Safe Operating Area
www.irf.com
END OF LIFE
IRF7404QPbF
8.0
V DS
D.U.T.
V GS
-ID , Drain Current (A)
RD
RG
6.0
A
V
+ DD
-4.5V
Pulse Width ≤ 1μs
Duty Factor ≤ 0.1%
4.0
Fig 10a. Switching Time Test Circuit
2.0
VDS
90%
0.0
25
50
75
100
125
150
TC , Case Temperature ( °C)
10%
VGS
Fig 9. Maximum Drain Current Vs.
Ambient Temperature
td(on)
tr
t d(off)
tf
Fig 10b. Switching Time Waveforms
Thermal Response (Z thJA )
100
D = 0.50
10
0.20
0.10
0.05
PDM
0.02
1
0.01
t1
t2
SINGLE PULSE
(THERMAL RESPONSE)
0.1
0.0001
0.001
Notes:
1. Duty factor D = t 1 / t 2
2. Peak T J = P DM x Z thJA + TA
0.01
0.1
1
10
100
t1 , Rectangular Pulse Duration (sec)
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
www.irf.com
5
IRF7404QPbF
END OF LIFE
Current Regulator
Same Type as D.U.T.
50KΩ
QG
12V
.2μF
.3μF
-4.5 V
QGS
VGS
VG
-3mA
Charge
Fig 12a. Basic Gate Charge Waveform
6
D.U.T.
QGD
+VDS
IG
ID
Current Sampling Resistors
Fig 12b. Gate Charge Test Circuit
www.irf.com
END OF LIFE
IRF7404QPbF
Peak Diode Recovery dv/dt Test Circuit
+
D.U.T
Circuit Layout Considerations
• Low Stray Inductance
• Ground Plane
• Low Leakage Inductance
Current Transformer
+
-
-
+
**
RG
+
• dv/dt controlled by RG
• ISD controlled by Duty Factor "D"
• D.U.T. - Device Under Test
VGS*
-
*
VDD
*
Reverse Polarity for P-Channel
** Use P-Channel Driver for P-Channel Measurements
Driver Gate Drive
P.W.
Period
D=
P.W.
Period
VGS=10V
[
] ***
D.U.T. ISD Waveform
Reverse
Recovery
Current
Body Diode Forward
Current
di/dt
D.U.T. VDS Waveform
Diode Recovery
dv/dt
[
Re-Applied
Voltage
Body Diode
VDD
]
Forward Drop
Inductor Curent
Ripple ≤ 5%
[
ISD
]
*** VGS = 5.0V for Logic Level and 3V Drive Devices
Fig 13. For P-Channel HEXFETS
www.irf.com
7
END OF LIFE
IRF7404QPbF
SO-8 Package Outline
Dimensions are shown in millimeters (inches)
D
5
A
8
6
7
6
5
H
1
2
3
0.25 [.010]
4
A
MAX
MIN
.0532
.0688
1.35
1.75
A1 .0040
6X
e1
8X b
0.25 [.010]
A
A1
MAX
0.25
.0098
0.10
b
.013
.020
0.33
0.51
c
.0075
.0098
0.19
0.25
D
.189
.1968
4.80
5.00
E
.1497
.1574
3.80
4.00
e
.050 BASIC
1.27 BASIC
.025 BASIC
0.635 BASIC
e1
e
MILLIMETERS
MIN
A
E
INCHES
DIM
B
H
.2284
.2440
5.80
6.20
K
.0099
.0196
0.25
0.50
L
.016
.050
0.40
1.27
y
0°
8°
0°
8°
K x 45°
C
y
0.10 [.004]
8X L
8X c
7
C A B
F OOTPRINT
NOT ES :
1. DIMENS IONING & TOLERANCING PER ASME Y14.5M-1994.
8X 0.72 [.028]
2. CONT ROLLING DIMENS ION: MILLIMET ER
3. DIMENS IONS ARE SHOWN IN MILLIMETERS [INCHES].
4. OUTLINE CONFORMS TO JEDEC OUTLINE MS -012AA.
5 DIMENS ION DOES NOT INCLUDE MOLD PROT RUSIONS .
MOLD PROTRUS IONS NOT TO EXCEED 0.15 [.006].
6 DIMENS ION DOES NOT INCLUDE MOLD PROT RUSIONS .
MOLD PROTRUS IONS NOT TO EXCEED 0.25 [.010].
6.46 [.255]
7 DIMENS ION IS T HE LENGT H OF LEAD FOR SOLDERING TO
A S UBST RAT E.
3X 1.27 [.050]
8X 1.78 [.070]
SO-8 Part Marking
EXAMPLE: T HIS IS AN IRF7101 (MOSFET )
INT ERNAT IONAL
RECT IFIER
LOGO
XXXX
F7101
DAT E CODE (YWW)
P = DES IGNAT ES LEAD-FREE
PRODUCT (OPT IONAL)
Y = LAS T DIGIT OF T HE YEAR
WW = WEEK
A = ASS EMBLY S IT E CODE
LOT CODE
PART NUMBER
Notes:
1. For an Automotive Qualified version of this part please see : http://www.irf.com/product-info/auto/
2. For the most current drawing please refer to IR website at http://www.irf.com/package/
8
www.irf.com
END OF LIFE
IRF7404QPbF
SO-8 Tape and Reel
Dimensions are shown in millimeters (inches)
TERMINAL NUMBER 1
12.3 ( .484 )
11.7 ( .461 )
8.1 ( .318 )
7.9 ( .312 )
FEED DIRECTION
NOTES:
1. CONTROLLING DIMENSION : MILLIMETER.
2. ALL DIMENSIONS ARE SHOWN IN MILLIMETERS(INCHES).
3. OUTLINE CONFORMS TO EIA-481 & EIA-541.
330.00
(12.992)
MAX.
14.40 ( .566 )
12.40 ( .488 )
NOTES :
1. CONTROLLING DIMENSION : MILLIMETER.
2. OUTLINE CONFORMS TO EIA-481 & EIA-541.
For the most current drawing please refer to IR website at http://www.irf.com/package/
www.irf.com
9
IRF7404QPbF
END OF LIFE
†
Qualification Information
Industrial †
Qualification level
(per JEDEC JESD47F††guidelines)
Moisture Sensitivity Level
MSL1
SO-8
(per JEDEC J-STD-020D††)
Yes
RoHS Compliant
Qualification standards can be found at International Rectifier’s web site
http://www.irf.com/product-info/reliability
†† Applicable version of JEDEC standard at the time of product release.
†
Revision History
Date
2/10/2015
Comments
• Added ordering information to reflect the End-Of-life
IR WORLD HEADQUARTERS: 101 N. Sepulveda Blvd., El Segundo, California 90245, USA
To contact International Rectifier, please visit http://www.irf.com/whoto-call/
10
www.irf.com
工商网监
湘ICP备2023018690号
