PD - 96103A
IRF7303QPbF
HEXFET® Power MOSFET
l
l
l
l
l
l
l
Advanced Process Technology
Ultra Low On-Resistance
Dual N Channel MOSFET
Surface Mount
Available in Tape & Reel
150°C Operating Temperature
Lead-Free
S1
1
8
D1
G1
2
7
D1
S2
3
6
D2
G2
4
5
D2
VDSS = 30V
RDS(on) = 0.050Ω
Top View
Description
These HEXFET® Power MOSFET's in a Dual SO-8 package
utilize the lastest processing techniques to achieve extremely
low on-resistance per silicon area. Additional features of
these HEXFET Power MOSFET's are a 150°C junction
operating temperature, fast switching speed and improved
repetitive avalanche rating. These benefits combine to
make this design an extremely efficient and reliable device
for use in a wide variety of applications.
The efficient SO-8 package provides enhanced thermal
characteristics and dual MOSFET die capability making it
ideal in a variety of power applications. This dual, surface
mount SO-8 can dramatically reduce board space and is
also available in Tape & Reel.
SO-8
Absolute Maximum Ratings
Parameter
ID @ TA = 25°C
ID @ TA = 25°C
ID @ TA = 70°C
IDM
PD @TA = 25°C
V GS
dv/dt
TJ, TSTG
10 Sec. Pulsed Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Peak Diode Recovery dv/dt
Junction and Storage Temperature Range
Max.
Units
5.3
4.9
3.9
20
2.0
0.016
± 20
5.0
-55 to + 150
A
W
W/°C
V
V/ns
°C
Thermal Resistance Ratings
Parameter
RθJA
www.irf.com
Maximum Junction-to-Ambient
Typ.
Max.
Units
62.5
°C/W
1
08/02/10
IRF7303QPbF
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Drain-to-Source Breakdown Voltage
∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient
Qg
Q gs
Qgd
td(on)
tr
td(off)
tf
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Min.
30
1.0
5.2
Typ.
0.032
6.8
21
22
7.7
LD
Internal Drain Inductance
4.0
LS
Internal Source Inductance
6.0
Ciss
Coss
Crss
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
520
180
72
V(BR)DSS
RDS(ON)
Static Drain-to-Source On-Resistance
VGS(th)
g fs
Gate Threshold Voltage
Forward Transconductance
IDSS
Drain-to-Source Leakage Current
IGSS
Max. Units
Conditions
V
VGS = 0V, ID = 250µA
V/°C Reference to 25°C, ID = 1mA
0.050
VGS = 10V, ID = 2.4A
Ω
0.080
VGS = 4.5V, ID = 2.0A
V
VDS = VGS, ID = 250µA
S
VDS = 15V, ID = 2.4A
1.0
VDS = 24V, VGS = 0V
µA
25
VDS = 24V, V GS = 0V, TJ = 125 °C
100
VGS = 20V
nA
-100
VGS = - 20V
25
ID = 2.4A
2.9
nC VDS = 24V
7.9
VGS = 10V, See Fig. 6 and 12
VDD = 15V
ID = 2.4A
ns
RG = 6.0Ω
RD = 6.2Ω, See Fig. 10
D
nH
Between lead tip
and center of die contact
pF
VGS = 0V
VDS = 25V
= 1.0MHz, See Fig. 5
G
S
Source-Drain Ratings and Characteristics
IS
I SM
V SD
t rr
Q rr
ton
Parameter
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode)
Diode Forward Voltage
Reverse Recovery Time
Reverse RecoveryCharge
Forward Turn-On Time
Min. Typ. Max. Units
Conditions
D
MOSFET symbol
2.5
showing the
A
G
integral reverse
20
p-n junction diode.
S
1.0
V
TJ = 25°C, IS = 1.8A, V GS = 0V
47
71
ns
TJ = 25°C, IF = 2.4A
56
84
nC di/dt = 100A/µs
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
Notes:
Repetitive rating; pulse width limited by
Pulse width ≤ 300µs; duty cycle ≤ 2%.
ISD ≤ 2.4A, di/dt ≤ 73A/µs, VDD ≤ V(BR)DSS,
Surface mounted on FR-4 board, t ≤ 10sec.
max. junction temperature. ( See fig. 11 )
TJ ≤ 150°C
www.irf.com
2
IRF7303QPbF
1000
1000
VGS
15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
BOTTOM 4.5V
100
4.5V
10
20µs PULSE WIDTH
TJ = 25°C
1
0.1
VGS
15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
BOTTOM 4.5V
TOP
I , Drain-to-Source Current (A)
D
I , Drain-to-Source Current (A)
D
TOP
1
10
A
100
4.5V
10
20µs PULSE WIDTH
TJ = 150°C
1
0.1
100
1
VDS , Drain-to-Source Voltage (V)
Fig 2. Typical Output Characteristics
100
R DS(on) , Drain-to-Source On Resistance
(Normalized)
I D , Drain-to-Source Current (A)
2.0
TJ = 25°C
TJ = 150°C
V DS = 15V
20µs PULSE WIDTH
4
5
6
7
8
9
VGS , Gate-to-Source Voltage (V)
Fig 3. Typical Transfer Characteristics
www.irf.com
A
100
VDS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
10
10
10
A
I D = 4.0A
1.5
1.0
0.5
VGS = 10V
0.0
-60
-40
-20
0
20
40
60
80
A
100 120 140 160
TJ , Junction Temperature (°C)
Fig 4. Normalized On-Resistance
Vs. Temperature
3
IRF7303QPbF
1000
V GS , Gate-to-Source Voltage (V)
800
C, Capacitance (pF)
20
V GS = 0V,
f = 1MHz
C iss = Cgs + C gd , Cds SHORTED
C rss = C gd
C oss = C ds + C gd
I D = 2.4A
VDS = 24V
16
Ciss
600
12
Coss
400
Crss
200
0
1
10
100
A
8
4
FOR TEST CIRCUIT
SEE FIGURE 12
0
0
5
VDS , Drain-to-Source Voltage (V)
15
20
25
A
Q G , Total Gate Charge (nC)
Fig 5. Typical Capacitance Vs.
Drain-to-Source Voltage
Fig 6. Typical Gate Charge Vs.
Gate-to-Source Voltage
100
100
OPERATION IN THIS AREA LIMITED
BY RDS(on)
ID , Drain Current (A)
ISD , Reverse Drain Current (A)
10
10
TJ = 150°C
TJ = 25°C
1
VGS = 0V
0.1
0.0
0.5
1.0
1.5
2.0
VSD , Source-to-Drain Voltage (V)
Fig 7. Typical Source-Drain Diode
Forward Voltage
www.irf.com
A
2.5
100us
10
1ms
TA = 25 ° C
TJ = 150 ° C
Single Pulse
1
0.1
10ms
1
10
100
VDS , Drain-to-Source Voltage (V)
Fig 8. Maximum Safe Operating Area
4
IRF7303QPbF
5.0
V DS
VGS
ID , Drain Current (A)
4.0
D.U.T.
RG
3.0
RD
+
- VDD
10V
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
2.0
Fig 10a. Switching Time Test Circuit
1.0
VDS
90%
0.0
25
50
75
100
125
150
TC , Case Temperature ( °C)
10%
VGS
Fig 9. Maximum Drain Current Vs.
Ambient Temperature
td(on)
tr
t d(off)
tf
Fig 10b. Switching Time Waveforms
Thermal Response (Z thJA )
100
D = 0.50
0.20
10
0.10
0.05
0.02
1
PDM
0.01
t1
SINGLE PULSE
(THERMAL RESPONSE)
t2
Notes:
1. Duty factor D = t 1 / t 2
2. Peak T J = P DM x Z thJA + TA
0.1
0.0001
0.001
0.01
0.1
1
10
100
t1 , Rectangular Pulse Duration (sec)
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
www.irf.com
5
IRF7303QPbF
Current Regulator
Same Type as D.U.T.
QG
10V
QGS
50KΩ
.2µF
12V
.3µF
QGD
VG
D.U.T.
+
V
- DS
VGS
3mA
Charge
IG
ID
Current Sampling Resistors
Fig 12a. Basic Gate Charge Waveform
www.irf.com
Fig 12b. Gate Charge Test Circuit
6
IRF7303QPbF
Peak Diode Recovery dv/dt Test Circuit
+
D.U.T
Circuit Layout Considerations
• Low Stray Inductance
• Ground Plane
• Low Leakage Inductance
Current Transformer
+
-
-
+
RG
•
•
•
•
Driver Gate Drive
P.W.
+
dv/dt controlled by R G
Driver same type as D.U.T.
ISD controlled by Duty Factor "D"
D.U.T. - Device Under Test
Period
D=
-
VDD
P.W.
Period
VGS=10V
*
D.U.T. ISD Waveform
Reverse
Recovery
Current
Body Diode Forward
Current
di/dt
D.U.T. VDS Waveform
Diode Recovery
dv/dt
Re-Applied
Voltage
Body Diode
VDD
Forward Drop
Inductor Curent
Ripple ≤ 5%
ISD
* VGS = 5V for Logic Level Devices
Fig 13. For N-Channel HEXFETS
www.irf.com
7
IRF7303QPbF
SO-8 Package Outline
Dimensions are shown in millimeters (inches)
D
5
A
8
6
7
6
5
H
1
2
3
0.25 [.010]
4
A
MAX
MIN
.0532
.0688
1.35
1.75
A1 .0040
e
e1
A1
8X b
0.25 [.010]
A
MAX
0.25
.0098
0.10
b
.013
.020
0.33
0.51
c
.0075
.0098
0.19
0.25
D
.189
.1968
4.80
5.00
E
.1497
.1574
3.80
4.00
e
.050 BASIC
1.27 BASIC
.025 BASIC
0.635 B ASIC
e1
6X
MILLIMETERS
MIN
A
E
INCHES
DIM
B
H
.2284
.2440
5.80
6.20
K
.0099
.0196
0.25
0.50
L
.016
.050
0.40
1.27
y
0°
8°
0°
8°
K x 45°
C
y
0.10 [.004]
8X L
8X c
7
C A B
FOOT PRINT
NOT ES :
1. DIMENSIONING & T OLERANCING PER AS ME Y14.5M-1994.
8X 0.72 [.028]
2. CONT ROLLING DIMENSION: MILLIMET ER
3. DIMENSIONS ARE SHOWN IN MILLIMETERS [INCHES ].
4. OUTLINE CONFORMS T O JEDEC OUT LINE MS-012AA.
5 DIMENSION DOES NOT INCLUDE MOLD PROTRUS IONS .
MOLD PROTRUS IONS NOT T O EXCEED 0.15 [.006].
6 DIMENSION DOES NOT INCLUDE MOLD PROTRUS IONS .
MOLD PROTRUS IONS NOT T O EXCEED 0.25 [.010].
6.46 [.255]
7 DIMENSION IS T HE LENGTH OF LEAD F OR S OLDERING T O
A S UBST RATE.
3X 1.27 [.050]
8X 1.78 [.070]
SO-8 Part Marking
E XAMPL E : T H IS IS AN IRF 7101 (MOS F E T )
INT E RNAT IONAL
RE CT IF IE R
L OGO
XXXX
F 7101
DAT E CODE (YWW)
P = DE S IGNAT E S L E AD-F RE E
PR ODU CT (OPT IONAL )
Y = L AS T DIGIT OF T H E YE AR
WW = WE E K
A = AS S E MB L Y S IT E CODE
L OT CODE
PART NU MB E R
Notes:
1. For an Automotive Qualified version of this part please seehttp://www.irf.com/product-info/auto/
2. For the most current drawing please refer to IR website at http://www.irf.com/package/
www.irf.com
8
IRF7303QPbF
SO-8 Tape and Reel
Dimensions are shown in millimeters (inches)
TERMINAL NUMBER 1
12.3 ( .484 )
11.7 ( .461 )
8.1 ( .318 )
7.9 ( .312 )
FEED DIRECTION
NOTES:
1. CONTROLLING DIMENSION : MILLIMETER.
2. ALL DIMENSIONS ARE SHOWN IN MILLIMETERS(INCHES).
3. OUTLINE CONFORMS TO EIA-481 & EIA-541.
330.00
(12.992)
MAX.
14.40 ( .566 )
12.40 ( .488 )
NOTES :
1. CONTROLLING DIMENSION : MILLIMETER.
2. OUTLINE CONFORMS TO EIA-481 & EIA-541.
Data and specifications subject to change without notice.
This product has been designed and qualified for the Industrial market.
Qualification Standards can be found on IR’s Web site.
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information.08/2010
www.irf.com
9
工商网监
湘ICP备2023018690号
