IRF7314QTRPBF

PD - 96107A IRF7314QPbF HEXFET® Power MOSFET Benefits • Advanced Process Technology • ÿDual P-Channel MOSFET • ÿUltra Low On-Resistance • ÿ175°C Operating Temperature • ÿRepetitive Avalanche Allowed up to Tjmax • ÿLead-Free Description These HEXFET ® Power MOSFET’s in a Dual SO-8 package utilize the lastest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of these HEXFET Power MOSFET’s are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating. These benefits combine to make this design an extremely efficient and reliable device for use in a wide variety of applications. VDSS RDS(on) max ID -20V 0.058@VGS = -4.5V 0.098@VGS = -2.7V -5.2A -4.42A S1 1 8 D1 G1 2 7 D1 S2 3 6 D2 G2 4 5 D2 SO-8 Top View The 175°C rating for the SO-8 package provides improved thermal performance with increased safe operating area and dual MOSFET die capability make it ideal in a variety of power applications. This dual, surface mount SO-8 can dramatically reduce board space and is also available in Tape & Reel. Absolute Maximum Ratings Parameter VDS ID @ TA = 25°C ID @ TA = 70°C IDM PD @TA = 25°C PD @TA = 70°C VGS EAS IAR EAR TJ , TSTG Max. Drain-Source Voltage Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current Maximum Power Dissipationƒ Maximum Power Dissipationƒ Linear Derating Factor Gate-to-Source Voltage Single Pulse Avalanche Energy‚ Avalanche Current Repetitive Avalanche Energy Junction and Storage Temperature Range -20 -5.2 -4.3 -43 2.4 1.7 16 ± 12 610 -5.2 See Fig.14, 15, 16 -55 to + 175 Units V A W W mW/°C V mJ A mJ °C Thermal Resistance Parameter RθJA www.irf.com Max. Maximum Junction-to-Ambient ƒ Units 62.5 °C/W 1 08/02/10 IRF7314QPbF Electrical Characteristics @ TJ = 25°C (unless otherwise specified) ∆V(BR)DSS/∆TJ Parameter Drain-to-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient RDS(on) Static Drain-to-Source On-Resistance VGS(th) gfs Gate Threshold Voltage Forward Transconductance IDSS Drain-to-Source Leakage Current V(BR)DSS IGSS Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage Total Gate Charge Gate-to-Source Charge Gate-to-Drain ("Miller") Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance Min. -20 ––– ––– ––– -0.7 6.8 ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– Typ. ––– 0.009 0.049 0.082 ––– ––– ––– ––– ––– ––– 19 2.1 9.3 18 26 41 38 913 512 260 Max. Units Conditions ––– V VGS = 0V, ID = -250µA ––– V/°C Reference to 25°C, ID = -1mA 0.058 VGS = -4.5V, ID = -5.2A ‚ Ω 0.098 VGS = -2.7V, ID = -4.42A ‚ ––– V VDS = VGS, ID = -250µA ––– S VDS = 10V, ID = -5.2A -1.0 VDS = -16V, VGS = 0V µA -25 VDS = -16V, VGS = 0V, TJ = 150°C -100 VGS = -12V nA 100 VGS = 12V 29 ID = -5.2A 3.2 nC VDS = -16V 14 VGS = -4.5V ––– VDD = -10V ––– ID = -1.0A ns ––– RG = 6.0Ω ––– VGS = -4.5V ‚ ––– VGS = 0V ––– pF VDS = -15V ––– ƒ = 1.0MHz Source-Drain Ratings and Characteristics IS ISM VSD trr Qrr Parameter Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode)  Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge Min. Typ. Max. Units ––– ––– -3.0 ––– ––– -43 ––– ––– ––– ––– 44 54 -1.0 66 81 A V ns nC Conditions MOSFET symbol showing the G integral reverse p-n junction diode. TJ = 25°C, IS = -3.0A, VGS = 0V ‚ TJ = 25°C, IF = -3.0A di/dt = -100A/µs ‚ D S Notes:  Repetitive rating; pulse width limited by max. junction temperature. ‚ Starting TJ = 25°C, L = 45mH RG = 25Ω, IAS = -5.2A. 2 ƒ Surface mounted on FR-4 board, t ≤ 10sec. „ Pulse width ≤ 300µs; duty cycle ≤ 2%. www.irf.com IRF7314QPbF 100 VGS -7.5V -5.0V -4.5V -3.5V -3.0V -2.7V -2.0V BOTTOM -1.5V 100 VGS -7.5V -5.0V -4.5V -3.5V -3.0V -2.7V -2.0V BOTTOM -1.5V TOP 10 1 -1.5V 0.1 -ID, Drain-to-Source Current (A) -ID, Drain-to-Source Current (A) TOP 10 -1.5V 1 20µs PULSE WIDTH Tj = 175°C 20µs PULSE WIDTH Tj = 25°C 0.1 0.01 0.1 1 10 0.1 100 Fig 1. Typical Output Characteristics R DS(on) , Drain-to-Source On Resistance (Normalized) -I D , Drain-to-Source Current (A) TJ = 25 ° C TJ = 175 ° C 1 V DS = -15V 20µs PULSE WIDTH 2.0 3.0 4.0 5.0 -VGS, Gate-to-Source Voltage (V) Fig 3. Typical Transfer Characteristics www.irf.com 100 Fig 2. Typical Output Characteristics 2.0 100 0.1 1.0 10 -VDS, Drain-to-Source Voltage (V) -VDS, Drain-to-Source Voltage (V) 10 1 ID = -5.2A 1.5 1.0 0.5 0.0 -60 -40 -20 0 VGS = -4.5V 20 40 60 80 100 120 140 160 180 TJ , Junction Temperature ( °C) Fig 4. Normalized On-Resistance Vs. Temperature 3 IRF7314QPbF 2000 -VGS , Gate-to-Source Voltage (V) 1600 C, Capacitance (pF) 10 VGS = 0V, f = 1MHz Ciss = Cgs + Cgd , Cds SHORTED Crss = Cgd Coss = Cds + Cgd 1200 Ciss 800 Coss 400 0 Crss 1 10 ID = -5.2A 8 6 4 2 0 100 0 8 100 32 40 1000 OPERATION IN THIS AREA LIMITED BY RDS(on) TJ = 175 ° C -II D , Drain Current (A) -ISD , Reverse Drain Current (A) 24 Fig 6. Typical Gate Charge Vs. Gate-to-Source Voltage Fig 5. Typical Capacitance Vs. Drain-to-Source Voltage 10 100 TJ = 25 ° C 1 V GS = 0 V 0.5 0.8 1.1 -VSD ,Source-to-Drain Voltage (V) Fig 7. Typical Source-Drain Diode Forward Voltage 4 16 QG , Total Gate Charge (nC) -VDS , Drain-to-Source Voltage (V) 0.1 0.2 VDS =-16V 1.4 100us 1ms 10 10ms TC = 25 ° C TJ = 175 ° C Single Pulse 1 0.1 1 10 100 -VDS , Drain-to-Source Voltage (V) Fig 8. Maximum Safe Operating Area www.irf.com IRF7314QPbF 6.0 RD VDS -ID , Drain Current (A) 5.0 VGS D.U.T. RG - + 4.0 VDD VGS 3.0 Pulse Width ≤ 1 µs Duty Factor ≤ 0.1 % 2.0 Fig 10a. Switching Time Test Circuit 1.0 td(on) tr t d(off) tf VGS 0.0 25 50 75 100 125 150 175 10% TC , Case Temperature ( °C) 90% Fig 9. Maximum Drain Current Vs. Case Temperature VDS Fig 10b. Switching Time Waveforms 100 Thermal Response (Z thJA ) D = 0.50 0.20 10 0.10 0.05 0.02 1 0.01 PDM t1 SINGLE PULSE (THERMAL RESPONSE) 0.1 0.01 0.00001 t2 Notes: 1. Duty factor D = t 1 / t 2 2. Peak T J = P DM x Z thJA + TA 0.0001 0.001 0.01 0.1 1 10 100 t1 , Rectangular Pulse Duration (sec) Fig 10. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient www.irf.com 5 IRF7314QPbF RDS ( on ) , Drain-to-Source On Resistance Ω ( ) ( RDS(on), Drain-to -Source On ResistanceΩ) 0.080 0.070 0.060 ID = -5.2A 0.050 0.040 0.030 2.0 4.0 6.0 0.430 0.330 VGS = -2.7V 0.230 0.130 VGS = -4.5V 0.030 8.0 0 10 -VGS, Gate -to -Source Voltage (V) 20 30 40 50 -ID , Drain Current ( A ) Fig 11. Typical On-Resistance Vs. Gate Voltage Fig 12. Typical On-Resistance Vs. Drain Current QG 10 V 1600 QGS QGD VG Fig 13a. Basic Gate Charge Waveform Current Regulator Same Type as D.U.T. 50KΩ 12V .2µF .3µF D.U.T. + V - DS EAS , Single Pulse Avalanche Energy (mJ) BOTTOM Charge 1200 800 400 0 25 VGS 50 75 100 Starting Tj, Junction Temperature 3mA IG ID Current Sampling Resistors Fig 13b. Gate Charge Test Circuit 6 ID -2.1A -4.4A -5.2A TOP 125 150 175 ( ° C) Fig 14. Maximum Avalanche Energy Vs. Drain Current www.irf.com IRF7314QPbF - Avalanche Current (A) 100 Duty Cycle = Single Pulse 10 Allowed avalanche Current vs avalanche pulsewidth, tav assuming ∆ Tj = 25°C due to avalanche losses 0.01 1 0.05 0.10 0.1 0.01 1.0E-05 1.0E-04 1.0E-03 1.0E-02 1.0E-01 1.0E+00 1.0E+01 1.0E+02 tav (sec) Fig 15. Typical Avalanche Current Vs.Pulsewidth EAR , Avalanche Energy (mJ) 700 TOP Single Pulse BOTTOM 10% Duty Cycle ID = -5.2A 600 500 400 300 200 100 0 25 50 75 100 125 150 Starting T J , Junction Temperature (°C) Fig 16. Maximum Avalanche Energy Vs. Temperature www.irf.com Notes on Repetitive Avalanche Curves , Figures 15, 16: (For further info, see AN-1005 at www.irf.com) 1. Avalanche failures assumption: Purely a thermal phenomenon and failure occurs at a temperature far in excess of T jmax. This is validated for every part type. 2. Safe operation in Avalanche is allowed as long asTjmax is not exceeded. 3. Equation below based on circuit and waveforms shown in Figures 12a, 12b. 4. PD (ave) = Average power dissipation per single avalanche pulse. 5. BV = Rated breakdown voltage (1.3 factor accounts for voltage increase during avalanche). 6. Iav = Allowable avalanche current. 7. ∆T = Allowable rise in junction temperature, not to exceed Tjmax (assumed as 25°C in Figure 15, 16). tav = Average time in avalanche. 175 D = Duty cycle in avalanche = tav ·f ZthJC(D, tav ) = Transient thermal resistance, see figure 11) PD (ave) = 1/2 ( 1.3·BV·Iav) = DT/ ZthJC Iav = 2DT/ [1.3·BV·Zth] EAS (AR) = PD (ave)·tav 7 IRF7314QPbF SO-8 Package Outline Dimensions are shown in millimeters (inches) D 5 A 8 6 7 6 5 H 1 2 3 0.25 [.010] 4 A MAX MIN .0532 .0688 1.35 1.75 A1 .0040 e e1 A1 8X b 0.25 [.010] A MAX 0.25 .0098 0.10 b .013 .020 0.33 0.51 c .0075 .0098 0.19 0.25 D .189 .1968 4.80 5.00 E .1497 .1574 3.80 4.00 e .050 BASIC 1.27 BASIC .025 BASIC 0.635 B ASIC e1 6X MILLIMETERS MIN A E INCHES DIM B H .2284 .2440 5.80 6.20 K .0099 .0196 0.25 0.50 L .016 .050 0.40 1.27 y 0° 8° 0° 8° K x 45° Cθ 0.10 [.004] y 8X L 8X c 7 C A B F OOTPRINT NOT ES : 1. DIMENS IONING & TOLERANCING PER ASME Y14.5M-1994. 8X 0.72 [.028] 2. CONT ROLLING DIMENS ION: MILLIMET ER 3. DIMENS IONS ARE SHOWN IN MILLIMETERS [INCHES]. 4. OUTLINE CONFORMS TO JEDEC OUTLINE MS -012AA. 5 DIMENS ION DOES NOT INCLUDE MOLD PROT RUSIONS . MOLD PROTRUS IONS NOT TO EXCEED 0.15 [.006]. 6 DIMENS ION DOES NOT INCLUDE MOLD PROT RUSIONS . MOLD PROTRUS IONS NOT TO EXCEED 0.25 [.010]. 6.46 [.255] 7 DIMENS ION IS T HE LENGT H OF LEAD FOR SOLDERING TO A S UBST RAT E. 3X 1.27 [.050] 8X 1.78 [.070] SO-8 Part Marking EXAMPLE: T HIS IS AN IRF7101 (MOS FET ) INT ERNAT IONAL RECT IFIER LOGO XXXX F 7101 DATE CODE (YWW) P = DES IGNATES LEAD-FREE PRODUCT (OPT IONAL) Y = LAS T DIGIT OF T HE YEAR WW = WEEK A = AS S EMBLY S IT E CODE LOT CODE PART NUMBER Notes: 1. For an Automotive Qualified version of this part please seehttp://www.irf.com/product-info/auto/ 2. For the most current drawing please refer to IR website at http://www.irf.com/package/ 8 www.irf.com IRF7314QPbF SO-8 Tape and Reel Dimensions are shown in millimeters (inches) TERMINAL NUMBER 1 12.3 ( .484 ) 11.7 ( .461 ) 8.1 ( .318 ) 7.9 ( .312 ) FEED DIRECTION NOTES: 1. CONTROLLING DIMENSION : MILLIMETER. 2. ALL DIMENSIONS ARE SHOWN IN MILLIMETERS(INCHES). 3. OUTLINE CONFORMS TO EIA-481 & EIA-541. 330.00 (12.992) MAX. 14.40 ( .566 ) 12.40 ( .488 ) NOTES : 1. CONTROLLING DIMENSION : MILLIMETER. 2. OUTLINE CONFORMS TO EIA-481 & EIA-541. Data and specifications subject to change without notice. This product has been designed and qualified for the Industrial market. Qualification Standards can be found on IR’s Web site. IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information.08/2010 www.irf.com 9