IRFH5204TR2PBF

IRFH5204PbF HEXFET® Power MOSFET VDS 40 V RDS(on) max 4.3 mΩ Qg (typical) 43 nC RG (typical) 1.7 Ω (@VGS = 10V) ID 100 (@Tc(Bottom) = 25°C) h PQFN 5X6 mm A Applications • • • • Secondary Side Synchronous Rectification Inverters for DC Motors DC-DC Brick Applications Boost Converters Features and Benefits Features Benefits Low RDSon (< 4.3 mΩ) Low Thermal Resistance to PCB (< 1.2°C/W) 100% Rg tested Low Profile (