IRFH5025TR2PBF

IRFH5025PbF HEXFET® Power MOSFET VDS 250 V RDS(on) max 100 mΩ Qg (typical) 37 nC RG (typical) ID 1.6 Ω 25 A (@VGS = 10V) (@Tc(Bottom) = 25°C) PQFN 5X6 mm Applications • Secondary Side Synchronous Rectification • Inverters for DC Motors • DC-DC Brick Applications • Boost Converters Features and Benefits Benefits Features Low RDSon Low Thermal Resistance to PCB (≤ 0.8°C/W) 100% Rg tested Low Profile (≤ 0.9 mm) Industry-Standard Pinout Compatible with Existing Surface Mount Techniques RoHS Compliant Containing no Lead, no Bromide and no Halogen MSL1, Industrial Qualification Orderable part number Package Type IRFH5025TRPBF IRFH5025TR2PBF results in ⇒ Lower Conduction Losses Enable better thermal dissipation Increased Reliability Increased Power Density Multi-Vendor Compatibility Easier Manufacturing Environmentally Friendlier Increased Reliability Standard Pack Form Quantity PQFN 5mm x 6mm Tape and Reel 4000 PQFN 5mm x 6mm Tape and Reel 400 Note EOL notice # 259 Absolute Maximum Ratings VDS VGS ID @ TA = 25°C ID @ TA = 70°C ID @ TC(Bottom) = 25°C ID @ TC(Bottom) = 100°C ID @ TC(Top) = 25°C ID @ TC(Top) = 100°C IDM PD @TA = 25°C PD @ TC(Top) = 25°C Parameter Drain-to-Source Voltage Gate-to-Source Voltage Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current Power Dissipation Power Dissipation TJ TSTG Linear Derating Factor Operating Junction and Storage Temperature Range g f Max. 250 ± 20 3.8 3.1 25 16 5.7 3.7 46 3.6 8.3 Units 0.07 -55 to + 150 W/°C c f V A W °C Notes  through … are on page 8 1 www.irf.com © 2015 International Rectifier Submit Datasheet Feedback May 19, 2015 IRFH5025PbF Static @ TJ = 25°C (unless otherwise specified) BVDSS ΔΒVDSS/ΔTJ RDS(on) VGS(th) ΔVGS(th) IDSS IGSS Parameter Drain-to-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient Static Drain-to-Source On-Resistance Gate Threshold Voltage Gate Threshold Voltage Coefficient Drain-to-Source Leakage Current Output Charge Min. 250 ––– ––– 3.0 ––– ––– ––– ––– ––– 13 ––– ––– ––– ––– ––– ––– ––– Typ. ––– 0.31 84 ––– -13 ––– ––– ––– ––– ––– 37 8.3 1.9 13 14 15 11 Max. Units Conditions ––– V VGS = 0V, ID = 250μA ––– V/°C Reference to 25°C, ID = 1mA 100 mΩ VGS = 10V, ID = 5.7A 5.0 V VDS = VGS, ID = 150μA ––– mV/°C 20 μA VDS = 250V, VGS = 0V VDS = 250V, VGS = 0V, TJ = 125°C 250 VGS = 20V 100 nA -100 VGS = -20V ––– S VDS = 50V, ID = 5.7A 56 VDS = 125V ––– VGS = 10V ––– nC ID = 5.7A ––– ––– See Fig.17 & 18 ––– ––– nC VDS = 16V, VGS = 0V Gate Resistance Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance ––– ––– ––– ––– ––– ––– ––– ––– 1.6 9.0 6.3 17 6.1 2150 150 40 ––– ––– ––– ––– ––– ––– ––– ––– Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage Forward Transconductance Total Gate Charge Pre-Vth Gate-to-Source Charge Post-Vth Gate-to-Source Charge Gate-to-Drain Charge Gate Charge Overdrive Switch Charge (Qgs2 + Qgd) gfs Qg Qgs1 Qgs2 Qgd Qgodr Qsw Qoss RG td(on) tr td(off) tf Ciss Coss Crss e Ω ns pF VDD = 125V, VGS = 10V ID = 5.7A RG=1.8Ω See Fig.15 VGS = 0V VDS = 50V ƒ = 1.0MHz Avalanche Characteristics Parameter Single Pulse Avalanche Energy Avalanche Current EAS IAR c Typ. ––– ––– d Units mJ A Max. 320 5.7 Diode Characteristics IS Parameter Continuous Source Current ISM (Body Diode) Pulsed Source Current VSD trr Qrr ton (Body Diode) Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge Forward Turn-On Time Min. Typ. Max. Units ––– ––– 5.7 ––– ––– 46 A c Conditions MOSFET symbol showing the integral reverse D G p-n junction diode. TJ = 25°C, IS = 5.7A, VGS = 0V TJ = 25°C, IF = 5.7A, VDD = 125V di/dt = 500A/μs ––– ––– 1.3 V ––– 55 83 ns ––– 510 770 nC Time is dominated by parasitic Inductance e e Thermal Resistance Parameter RθJC (Bottom) RθJC (Top) RθJA RθJA (