IRFH5220TR2PBF

IRFH5220PbF HEXFET® Power MOSFET VDS 200 V RDS(on) max 99.9 mΩ 20 2.3 nC Ω 20 A (@VGS = 10V) Qg (typical) RG (typical) ID (@Tc(Bottom) = 25°C) PQFN 5X6 mm Applications • Secondary Side Synchronous Rectification • Inverters for DC Motors • DC-DC Brick Applications • Boost Converters Features and Benefits Benefits Features Low RDSon Low Thermal Resistance to PCB (≤ 1.2°C/W) 100% Rg tested Low Profile (≤ 0.9 mm) Lower Conduction Losses Enable better thermal dissipation Increased Reliability results in Increased Power Density ⇒ Industry-Standard Pinout Compatible with Existing Surface Mount Techniques RoHS Compliant Containing no Lead, no Bromide and no Halogen MSL1, Industrial Qualification Orderable part number Package Type IRFH5220TRPBF IRFH5220TR2PBF Multi-Vendor Compatibility Easier Manufacturing Environmentally Friendlier Increased Reliability Standard Pack Form Quantity PQFN 5mm x 6mm Tape and Reel 4000 PQFN 5mm x 6mm Tape and Reel 400 Note EOL notice # 259 Absolute Maximum Ratings VDS VGS ID @ TA = 25°C ID @ TA = 70°C ID @ TC(Bottom) = 25°C ID @ TC(Bottom) = 100°C ID @ TC(Top) = 25°C Parameter Drain-to-Source Voltage Gate-to-Source Voltage Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V ID @ TC(Top) = 100°C IDM PD @TA = 25°C PD @ TC(Top) = 25°C Continuous Drain Current, VGS @ 10V Pulsed Drain Current Power Dissipation Power Dissipation TJ TSTG Linear Derating Factor Operating Junction and Storage Temperature Range g f c f Max. 200 ± 20 3.8 3.0 20 Units 13 5.8 3.7 47 3.6 8.3 A 0.07 -55 to + 150 V W W/°C °C Notes  through … are on page 8 1 www.irf.com © 2015 International Rectifier Submit Datasheet Feedback March 19, 2015 IRFH5220PbF Static @ TJ = 25°C (unless otherwise specified) BVDSS ΔΒVDSS/ΔTJ RDS(on) VGS(th) Parameter Drain-to-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient Static Drain-to-Source On-Resistance Gate Threshold Voltage Min. 200 ––– ––– 3.0 Typ. ––– 0.21 80 ––– ΔVGS(th) IDSS Gate Threshold Voltage Coefficient Drain-to-Source Leakage Current IGSS Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage Forward Transconductance ––– ––– ––– ––– ––– 16 -11 ––– ––– ––– ––– ––– Max. Units Conditions ––– V VGS = 0V, ID = 250μA ––– V/°C Reference to 25°C, ID = 1mA 99.9 mΩ VGS = 10V, ID = 5.8A 5.0 V VDS = VGS, ID = 100μA ––– mV/°C 20 μA VDS = 200V, VGS = 0V 1.0 mA VDS = 200V, VGS = 0V, TJ = 125°C 100 VGS = 20V nA -100 VGS = -20V ––– S VDS = 50V, ID = 5.8A ––– ––– ––– ––– ––– 20 5.4 1.3 6.3 7.0 30 ––– ––– ––– ––– Output Charge ––– ––– 7.6 9.4 ––– ––– Gate Resistance Turn-On Delay Time Rise Time Turn-Off Delay Time ––– ––– ––– ––– 2.3 7.2 4.7 14 ––– ––– ––– ––– Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance ––– ––– ––– ––– 3.4 1380 100 23 ––– ––– ––– ––– gfs Qg Total Gate Charge Pre-Vth Gate-to-Source Charge Post-Vth Gate-to-Source Charge Gate-to-Drain Charge Gate Charge Overdrive Switch Charge (Qgs2 + Qgd) Qgs1 Qgs2 Qgd Qgodr Qsw Qoss RG td(on) tr td(off) tf Ciss Coss Crss e nC VDS = 100V VGS = 10V ID = 5.8A See Fig.17 & 18 nC VDS = 16V, VGS = 0V Ω ns pF VDD = 100V, VGS = 10V ID = 5.8A RG=1.8Ω See Fig.15 VGS = 0V VDS = 50V ƒ = 1.0MHz Avalanche Characteristics Parameter Single Pulse Avalanche Energy Avalanche Current EAS IAR c Max. 290 5.8 Typ. ––– ––– d Units mJ A Diode Characteristics IS Parameter Continuous Source Current ISM (Body Diode) Pulsed Source Current Typ. ––– ––– Max. Units 5.8 A c (Body Diode) Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge VSD trr Qrr ton Min. Forward Turn-On Time ––– ––– 47 ––– ––– ––– ––– 39 355 1.3 59 530 V ns nC Conditions MOSFET symbol showing the integral reverse D G p-n junction diode. TJ = 25°C, IS = 5.8A, VGS = 0V TJ = 25°C, IF = 5.8A, VDD = 100V di/dt = 500A/μs S e e Time is dominated by parasitic Inductance Thermal Resistance Parameter RθJC (Bottom) RθJC (Top) RθJA RθJA (