IRFH6200TR2PBF

IRFH6200TRPbF VDS 20 RDS(on) max 0.99 (@VGS = 4.5V) (@VGS = 2.5V) Qg (typical) RG (typical) ID mΩ 1.50 155 nC 1.3 Ω 100 (@Tmb = 25°C) HEXFET® Power MOSFET V h A PQFN 5X6 mm Applications • Charge and discharge switch for battery application • Load switch for 12V (typical) bus • Hot-Swap Switch Features Benefits Low RDSon (≤ 0.99mΩ) Lower Conduction Losses Low Thermal Resistance to PCB (≤ 0.8°C/W) Enable better thermal dissipation Low Profile (≤ 0.9 mm) results in Increased Power Density ⇒ Multi-Vendor Compatibility Industry-Standard Pinout Compatible with Existing Surface Mount Techniques Easier Manufacturing RoHS Compliant, Halogen-Free Environmentally Friendlier Base Part Number Package Type IRFH6200PbF PQFN 5mm x 6mm PQFN 5mm x 6mm Standard Pack Form Quantity Tape and Reel 4000 Tape and Reel 400 Orderable part number Note IRFH6200TRPbF IRFH6200TR2PbF EOL Notice #259 Absolute Maximum Ratings VDS VGS ID @ TA = 25°C ID @ TA = 70°C ID @ Tmb = 25°C ID @ Tmb = 100°C IDM PD @TA = 25°C PD @Tmb = 25°C TJ TSTG Parameter Drain-to-Source Voltage Gate-to-Source Voltage Continuous Drain Current, VGS @ 4.5V Continuous Drain Current, VGS @ 4.5V Continuous Drain Current, VGS @ 4.5V Continuous Drain Current, VGS @ 4.5V Pulsed Drain Current Power Dissipation Power Dissipation Linear Derating Factor Operating Junction and Storage Temperature Range g g c g Max. 20 ±12 49 40 100 100 400 3.6 156 0.029 -55 to + 150 h h Units V A W W/°C °C Notes  through † are on page 9 1 www.irf.com © 2015 International Rectifier Submit Datasheet Feedback May 19, 2015 IRFH6200TRPbF Static @ TJ = 25°C (unless otherwise specified) Parameter BV DSS Drain-to-Source Breakdown Voltage ΔΒV DSS/ΔTJ Breakdown Voltage Temp. Coefficient RDS(on) Static Drain-to-Source On-Resistance Min. Typ. 20 ––– Max. Units ––– ––– 6.4 ––– ––– 0.75 0.95 ––– 0.80 0.99 ––– 1.10 1.50 V mV/°C Reference to 25°C, I D = 1mA 0.5 0.8 1.1 V ΔV GS(th) Gate Threshold Voltage Coefficient ––– -6.6 ––– mV/°C I DSS Drain-to-Source Leakage Current ––– ––– 1.0 ––– ––– 150 Gate-to-Source Forward Leakage ––– ––– 100 Gate-to-Source Reverse Leakage ––– ––– -100 Forward Transconductance 260 ––– ––– Qg Total Gate Charge ––– 155 230 Qgs Gate-to-Source Charge ––– 22 ––– Qgd Gate-to-Drain Charge ––– 53 ––– RG Gate Resistance ––– 1.3 ––– t d(on) Turn-On Delay Time ––– 14 ––– tr Rise Time ––– 74 ––– t d(off) Turn-Off Delay Time ––– 140 ––– tf Fall Time ––– 160 ––– Ciss Input Capacitance ––– 10890 ––– Coss Output Capacitance ––– 2890 ––– Crss Reverse Transfer Capacitance ––– 2180 ––– V GS = 4.5V, ID V GS = 2.5V, ID Gate Threshold Voltage gfs e = 50A e = 50A e V GS = 10V, ID = 50A mΩ VGS(th) I GSS Conditions V GS = 0V, I D = 250μA μA nA S V DS = V GS , ID = 150μA V DS = 16V, V GS = 0V V DS = 16V, V GS = 0V, TJ = 125°C V GS = 12V V GS = -12V V DS = 10V, I D = 50A V DS = 10V nC V GS = 4.5V I D = 50A (See Fig.17 & 18) Ω V DD = 10V, V GS = 4.5V ns I D = 50A RG=1.0Ω See Fig.15 V GS = 0V pF V DS = 10V ƒ = 1.0MHz Avalanche Characteristics Parameter EAS Single Pulse Avalanche Energy I AR Avalanche Current c d Typ. Max. Units ––– 780 mJ ––– 30 A Diode Characteristics Parameter IS Min. Continuous Source Current ––– (Body Diode) Typ. ––– Max. Units Conditions MOSFET symbol 100 A D showing the G I SM Pulsed Source Current VSD (Body Diode) Diode Forward Voltage ––– ––– 1.2 V t rr Reverse Recovery Time ––– 86 130 ns TJ = 25°C, I F = 50A, V DD = 10V Qrr Reverse Recovery Charge ––– 350 525 nC di/dt = 260A/μs ––– c ––– 400 integral reverse p-n junction diode. TJ = 25°C, I S = 50A, V GS = 0V S e e Thermal Resistance Parameter RθJ C-mb Typ. Max. 0.5 0.8 RθJ C (Top) Junction-to-Mounting Base Junction-to-Case f ––– 15 RθJ A Junction-to-Ambient ––– 35 ––– 22 RθJ A (