IRFH5302TR2PBF

IRMOSFET™ IRFH5302PbF VDSS 30 V RDS(on) max (@ VGS = 10V) 2.1 m Qg (typical) 29 nC Rg (typical) 1.6 Ω ID (@TC (Bottom) = 25°C) 175 A PQFN 5X6 mm Applications  OR-ing MOSFET for 12V (typical) Bus in-Rush Current  Synchronous MOSFET for buck converters  Battery Operated DC Motor Inverter MOSFET Features Low RDSon (< 2.1 mΩ) Low Thermal Resistance to PCB (< 1.2°C/W) 100% Rg tested Low Profile (< 0.9mm) Industry-Standard Pinout Compatible with Existing Surface Mount Techniques RoHS Compliant Containing no Lead, no Bromide and no Halogen MSL1, Industrial Qualification results in  Benefits Lower Conduction Losses Enable better Thermal Dissipation Increased Reliability Increased Power Density Multi-Vendor Compatibility Easier Manufacturing Environmentally Friendlier Increased Reliability Orderable Part Number Package Type IRFH5302TRPbF PQFN 5mm x 6mm Standard Pack Form Quantity Tape and Reel 4000 IRFH5302TR2PbF PQFN 5mm x 6mm Tape and Reel Note 400 EOL notice #259 Absolute Maximum Ratings Parameter Drain-to-Source Voltage Max. Units 30 V VGS Gate-to-Source Voltage ± 20 V ID @ TA = 25°C Continuous Drain Current, VGS @ 10V 32 ID @ TA = 70°C Continuous Drain Current, VGS @ 10V 26 VDS Symbol ID @ TC(Bottom) = 25°C Continuous Drain Current, VGS @ 10V  175 ID @ TC(Bottom) = 100°C Continuous Drain Current, VGS @ 10V  111 IDM Pulsed Drain Current  700 PD @TA = 25°C Power Dissipation  3.6 PD @TC(Bottom) = 25°C Power Dissipation  104 Linear Derating Factor  TJ Operating Junction and TSTG Storage Temperature Range A W 0.029 W/°C -55 to + 150 °C Notes  through  are on page 9 1 Rev. 2.3, 2021-03-03 IRFH5302PbF Static @ TJ = 25°C (unless otherwise specified) Parameter BVDSS Drain-to-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient BVDSS/TJ RDS(on) Static Drain-to-Source On-Resistance VGS(th) VGS(th) IDSS Gate Threshold Voltage Gate Threshold Voltage Coefficient Drain-to-Source Leakage Current IGSS Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage Forward Transconductance Total Gate Charge Total Gate Charge Pre-Vth Gate-to-Source Charge Post-Vth Gate-to-Source Charge Gate-to-Drain Charge Gate Charge Overdrive Switch Charge (Qgs2 + Qgd) Output Charge Gate Resistance Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance gfs Qg Qg Qgs1 Qgs2 Qgd Qgodr Qsw Qoss RG td(on) tr td(off) tf Ciss Coss Crss Min. 30 ––– ––– Typ. ––– 0.02 1.8 Max. ––– ––– 2.1 ––– 1.35 ––– ––– ––– ––– ––– 180 ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– 2.8 1.8 -6.8 ––– ––– ––– ––– ––– 76 29 7.7 4.4 9.7 8.2 14 19 1.6 18 51 22 18 4400 890 360 3.5 2.35 ––– 5.0 150 100 -100 ––– ––– 41 ––– ––– ––– ––– ––– ––– 2.5 ––– ––– ––– ––– ––– ––– ––– Avalanche Characteristics Parameter Single Pulse Avalanche Energy  Avalanche Current  EAS IAR Diode Characteristics Parameter IS Continuous Source Current (Body Diode) ISM Pulsed Source Current (Body Diode)  VSD Diode Forward Voltage trr Reverse Recovery Time Qrr Reverse Recovery Charge Thermal Resistance Units Conditions V VGS = 0V, ID = 250µA V/°C Reference to 25°C, ID = 1.0mA VGS = 10V, ID = 50A  m VGS = 4.5V, ID = 50A  V V = VGS, ID = 100µA mV/°C DS VDS = 24V, VGS = 0V µA VDS = 24V, VGS = 0V, TJ = 125°C VGS = 20V nA VGS = -20V S VDS = 15V, ID = 50A nC VGS = 10V, VDS = 15V, ID = 50A nC nC  ns pF Typ. ––– ––– VDS = 15V VGS = 4.5V ID = 50A See Fig. 17a & 17b VDS = 16V, VGS = 0V VDD = 15V, VGS = 4.5V ID = 50A RG=1.8 See Fig. 15 VGS = 0V VDS = 15V ƒ = 1.0MHz Max. 130 50 Units mJ A Min. Typ. Max. Units ––– Parameter ––– 104 ––– ––– 700 ––– ––– ––– ––– 20 32 1.0 30 48 Conditions MOSFET symbol showing the A integral reverse p-n junction diode. V TJ = 25°C, IS = 50A, VGS = 0V  ns TJ = 25°C, IF = 50A, VDD = 15V nC di/dt = 300A/µs  Typ. Max. RJC (Bottom) Junction-to-Case  ––– 1.2 RJC (Top) Junction-to-Case  RJA RJA (