IRFH7914TR2PBF

IRFH7914PbF HEXFET® Power MOSFET Applications l l Control MOSFET of Sync-Buck Converters used for Notebook Processor Power Control MOSFET for Isolated DC-DC VDSS 30V RDS(on) max Qg 8.7mΩ@VGS = 10V 8.3nC Converters in Networking Systems Benefits l l l l l l l l Very low RDS(ON) at 4.5V VGS Low Gate Charge Fully Characterized Avalanche Voltage and Current 100% Tested for RG Lead-Free (Qualified up to 260°C Reflow) RoHS compliant (Halogen Free) Low Thermal Resistance Large Source Lead for more reliable Soldering PQFN 5X6 mm Absolute Maximum Ratings Max. Units VDS Drain-to-Source Voltage Parameter 30 V VGS ± 20 ID @ TA = 25°C Gate-to-Source Voltage Continuous Drain Current, VGS @ 10V ID @ TA = 70°C Continuous Drain Current, VGS @ 10V 12 ID @ TC = 25°C Continuous Drain Current, VGS @ 10V 35 IDM Pulsed Drain Current 110 PD @TA = 25°C Power Dissipation PD @TA = 70°C Power Dissipation TJ Linear Derating Factor Operating Junction and TSTG Storage Temperature Range g g 15 c A W 3.1 2.0 g W/°C °C 0.025 -55 to + 150 Thermal Resistance Parameter f RθJC Junction-to-Case RθJA Junction-to-Ambient g Typ. Max. Units ––– 7.2 °C/W ––– 40 Notes  through … are on page 9 1 www.irf.com © 2013 International Rectifier August 16, 2013 IRFH7914PbF Static @ TJ = 25°C (unless otherwise specified) Parameter Min. Typ. Max. Units BVDSS Drain-to-Source Breakdown Voltage ∆ΒVDSS/∆TJ RDS(on) 30 ––– ––– Breakdown Voltage Temp. Coefficient ––– 0.022 ––– Static Drain-to-Source On-Resistance ––– 7.5 8.7 ––– 11.2 13 V V/°C Reference to 25°C, ID = 1mA mΩ VGS(th) Gate Threshold Voltage 1.35 1.8 2.35 V ∆VGS(th) Gate Threshold Voltage Coefficient ––– -6.08 ––– mV/°C IDSS Drain-to-Source Leakage Current ––– ––– 1.0 ––– ––– 150 IGSS Gate-to-Source Forward Leakage ––– ––– 100 Gate-to-Source Reverse Leakage ––– ––– -100 Forward Transconductance 77 ––– ––– gfs Qg Conditions VGS = 0V, ID = 250µA µA nA S Total Gate Charge ––– 8.3 12 Qgs1 Pre-Vth Gate-to-Source Charge ––– 2.1 ––– Qgs2 Post-Vth Gate-to-Source Charge ––– 1.0 ––– Qgd Gate-to-Drain Charge ––– 2.8 ––– Qgodr Gate Charge Overdrive Switch Charge (Qgs2 + Qgd) ––– 2.4 ––– Qsw ––– 3.8 ––– Qoss Output Charge ––– 4.8 ––– nC RG td(on) Gate Resistance Turn-On Delay Time ––– ––– 1.3 11 2.2 ––– Ω tr Rise Time ––– 11 ––– td(off) Turn-Off Delay Time ––– 12 ––– tf Fall Time ––– 4.6 ––– Ciss Input Capacitance ––– 1160 ––– Coss Output Capacitance ––– 220 ––– Crss Reverse Transfer Capacitance ––– 100 ––– VGS = 10V, ID = 14A VGS = 4.5V, ID = 11A e e VDS = VGS, ID = 25µA VDS = 24V, VGS = 0V VDS = 24V, VGS = 0V, TJ = 125°C VGS = 20V VGS = -20V VDS = 15V, ID = 11A VDS = 15V nC VGS = 4.5V ID = 11A See Fig.17 & 18 VDS = 16V, VGS = 0V VDD = 15V, VGS = 4.5V ns ID = 11A RG=1.8Ω See Fig.15 VGS = 0V pF VDS = 15V ƒ = 1.0MHz Avalanche Characteristics EAS Parameter Single Pulse Avalanche Energy IAR Avalanche Current c d Typ. Max. Units ––– 17 mJ ––– 11 A Diode Characteristics Parameter IS Continuous Source Current ISM (Body Diode) Pulsed Source Current Min. Typ. Max. Units ––– ––– 3.9 A ––– 110 VSD (Body Diode) Diode Forward Voltage ––– ––– ––– 1.0 V trr Reverse Recovery Time ––– 14 21 ns Qrr Reverse Recovery Charge ––– 9.5 14 nC ton Forward Turn-On Time c 2 Conditions MOSFET symbol showing the integral reverse D G p-n junction diode. TJ = 25°C, IS = 11A, VGS = 0V S e TJ = 25°C, IF = 11A, VDD = 15V di/dt = 200A/µs e Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD) www.irf.com © 2013 International Rectifier August 16, 2013 IRFH7914PbF 1000 1000 TOP ID, Drain-to-Source Current (A) Tj = 25°C 100 BOTTOM VGS 10V 5.0V 4.5V 3.5V 3.0V 2.7V 2.5V 2.3V ≤60µs PULSE WIDTH Tj = 150°C ID, Drain-to-Source Current (A) ≤60µs PULSE WIDTH TOP 100 10 1 BOTTOM VGS 10V 5.0V 4.5V 3.5V 3.0V 2.7V 2.5V 2.3V 10 1 2.3V 2.3V 0.1 0.1 0.1 1 10 100 0.1 V DS, Drain-to-Source Voltage (V) 100 Fig 2. Typical Output Characteristics 1000 2.0 100 TJ = 150°C 10 T J = 25°C 1 VDS = 15V ≤60µs PULSE WIDTH 0.1 ID = 14A VGS = 10V 1.5 (Normalized) RDS(on) , Drain-to-Source On Resistance ID, Drain-to-Source Current (A) 10 V DS, Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics 1.0 0.5 1 2 3 4 5 6 VGS , Gate-to-Source Voltage (V) Fig 3. Typical Transfer Characteristics 3 1 www.irf.com © 2013 International Rectifier -60 -40 -20 0 20 40 60 80 100 120 140 160 T J , Junction Temperature (°C) Fig 4. Normalized On-Resistance vs. Temperature August 16, 2013 IRFH7914PbF 14.0 VGS = 0V, f = 1 MHZ Ciss = Cgs + Cgd, C ds SHORTED Crss = Cgd Ciss 1000 ID= 11A VGS , Gate-to-Source Voltage (V) C, Capacitance (pF) 10000 Coss = Cds + Cgd Coss Crss 100 12.0 VDS= 24V VDS= 15V 10.0 8.0 6.0 4.0 2.0 10 0.0 1 10 100 0 2 4 VDS, Drain-to-Source Voltage (V) 1000 ID, Drain-to-Source Current (A) 1000 ISD, Reverse Drain Current (A) 8 10 12 14 16 18 20 22 Fig 6. Typical Gate Charge vs. Gate-to-Source Voltage Fig 5. Typical Capacitance vs. Drain-to-Source Voltage OPERATION IN THIS AREA LIMITED BY R DS(on) 100 100 T J = 150°C 10 T J = 25°C 1 100µsec 1msec 10 DC 10msec 1 T A = 25°C Tj = 150°C Single Pulse VGS = 0V 0.1 0.1 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 VSD, Source-to-Drain Voltage (V) Fig 7. Typical Source-Drain Diode Forward Voltage 4 6 Q G , Total Gate Charge (nC) www.irf.com © 2013 International Rectifier 0 1 10 100 VDS, Drain-to-Source Voltage (V) Fig 8. Maximum Safe Operating Area August 16, 2013 IRFH7914PbF 2.5 16 VGS(th) , Gate Threshold Voltage (V) 14 ID, Drain Current (A) 12 10 8 6 4 2 2.0 ID = 25µA 1.5 1.0 0.5 0 25 50 75 100 125 -75 -50 -25 150 0 25 50 75 100 125 150 T J , Temperature ( °C ) T A , Ambient Temperature (°C) Fig 9. Maximum Drain Current vs. Ambient Temperature Fig 10. Threshold Voltage vs. Temperature Thermal Response ( Z thJA ) °C/W 100 D = 0.50 10 0.20 0.10 0.05 1 τJ 0.02 0.01 R1 R1 τJ τ1 R2 R2 R3 R3 R4 R4 τA τ2 τ1 τ2 τ3 τ3 τ4 Ri (°C/W) τi (sec) 2.0021 0.000245 τA τ4 Ci= τi/Ri Ci= τi/Ri 0.1 1E-005 0.0001 0.001 0.014521 15.5002 0.7719 16.4970 38.3 Notes: 1. Duty Factor D = t1/t2 2. Peak Tj = P dm x Zthja + T A SINGLE PULSE ( THERMAL RESPONSE ) 0.01 1E-006 6.0077 0.01 0.1 1 10 100 1000 t1 , Rectangular Pulse Duration (sec) Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient 5 www.irf.com © 2013 International Rectifier August 16, 2013 25 80 ID = 14A EAS , Single Pulse Avalanche Energy (mJ) RDS(on), Drain-to -Source On Resistance (m Ω) IRFH7914PbF 20 15 T J = 125°C 10 T J = 25°C 5 ID 3.1A 4.0A BOTTOM 11A 70 TOP 60 50 40 30 20 10 0 0 2 4 6 8 10 12 14 16 18 20 25 50 75 Fig 12. On-Resistance vs. Gate Voltage V DS V GS + V - DD IAS 20V RD D.U.T. RG DRIVER D.U.T RG 150 Fig 13. Maximum Avalanche Energy vs. Drain Current 15V VDS 125 Starting T J , Junction Temperature (°C) VGS, Gate -to -Source Voltage (V) L 100 + -V DD V10V GS Pulse Width ≤ 1 µs Duty Factor ≤ 0.1 A 0.01Ω tp Fig 14a. Unclamped Inductive Test Circuit V(BR)DSS tp Fig 15a. Switching Time Test Circuit VDS 90% 10% VGS td(on) I AS Fig 14b. Unclamped Inductive Waveforms 6 tr td(off) tf Fig 15b. Switching Time Waveforms www.irf.com © 2013 International Rectifier August 16, 2013 IRFH7914PbF D.U.T Driver Gate Drive P.W. + ƒ - ‚ - - „ D.U.T. ISD Waveform Reverse Recovery Current + • dv/dt controlled by RG • Driver same type as D.U.T. • I SD controlled by Duty Factor "D" • D.U.T. - Device Under Test P.W. Period *  RG D= VGS=10V Circuit Layout Considerations • Low Stray Inductance • Ground Plane • Low Leakage Inductance Current Transformer + Period V DD + - Body Diode Forward Current di/dt D.U.T. VDS Waveform Diode Recovery dv/dt Re-Applied Voltage Body Diode VDD Forward Drop Inductor Curent ISD Ripple ≤ 5% * VGS = 5V for Logic Level Devices Fig 16. Peak Diode Recovery dv/dt Test Circuit for N-Channel HEXFET® Power MOSFETs Current Regulator Same Type as D.U.T. Id Vds Vgs 50KΩ 12V .2µF .3µF D.U.T. + V - DS Vgs(th) VGS 3mA IG ID Qgs1 Qgs2 Qgd Qgodr Current Sampling Resistors Fig 17. Gate Charge Test Circuit 7 www.irf.com © 2013 International Rectifier Fig 18. Gate Charge Waveform August 16, 2013 IRFH7914PbF PQFN 5x6 Option "E" Package Details PQFN Part Marking INTERNATIONAL RECTIFIER LOGO 6 DATE CODE ASSEMBLY SITE CODE (Per SCOP 200-002) XXXX XYWWX XXXXX PART NUMBER MARKING CODE (Per Marking Spec.) PIN 1 IDENTIFIER LOT CODE (Eng Mode - Min. last 4 digits of EATI #) (Prod Mode - 4 digits SPN code) TOP MARKING (LASER) Note: For the most current drawing please refer to IR website at http://www.irf.com/package/ 8 www.irf.com © 2013 International Rectifier August 16, 2013 IRFH7914PbF PQFN Tape and Reel Note: For the most current drawing please refer to IR website at http://www.irf.com/package/ Notes:  Repetitive rating; pulse width limited by max. junction temperature. ‚ Starting TJ = 25°C, L = 0.27mH, RG = 25Ω, IAS = 11A. ƒ Pulse width ≤ 400µs; duty cycle ≤ 2%. „ Rthjc is guaranteed by design … When mounted on 1 inch square 2 oz copper pad on 1.5x1.5 in. board of FR-4 material. Revision History Date 08/08/2013 Comments •Updated the package drawing, on page 1. •Updated the package outline drawing, on page 8. •This drawing change is related to PCN "Hana-GTBF-GEM 5x6 PQFN Public." IR WORLD HEADQUARTERS: 101 N. Sepulveda Blvd., El Segundo, California 90245, USA To contact International Rectifier, please visit http://www.irf.com/whoto-call/ 9 www.irf.com © 2013 International Rectifier August 16, 2013 IMPORTANT NOTICE The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics (“Beschaffenheitsgarantie”) . With respect to any examples, hints or any typical values stated herein and/or any information regarding the application of the product, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation warranties of non-infringement of intellectual property rights of any third party. In addition, any information given in this document is subject to customer’s compliance with its obligations stated in this document and any applicable legal requirements, norms and standards concerning customer’s products and any use of the product of Infineon Technologies in customer’s applications. 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